Use of the R-matrix propagation technique to calculate the electronic energy levels of aperiodic structures - Application to an AlAs/GaAs quasiperiodic superlattice
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Vasquez, R. P.↗
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Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide
The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.
Patterson, James D.↗
Electronic Characterization of Defects in Narrow Gap Semiconductors-Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide
We have used a Green's function technique to calculate the energy levels and formation energy of deep defects in the narrow gap semiconductors mercury cadmium telluride (MCT), mercury zinc telluride (MZT) and mercury zinc selenide (MZS). The formation energy is calculated from the difference between the total energy with an impurity cluster and the total energy for the perfect crystal. Substitutional (including antisite), interstitial (self and foreign), and vacancy deep defects are considered. Relaxation effects are calculated (with molecular dynamics). By use of a pseudopotential, we generalize the ideal vacancy model so as to be able to consider relaxation for vacancies. Different charge states are considered and the charged state energy shift (as computed by a modified Haldane-Anderson model) can be twice that due to relaxation. Different charged states for vacancies were not calculated to have much effect on the formation energy. For all cases we find deep defects in the energy gap only for cation site s-like orbitals or anion site p-like orbitals, and for the substitutional case only the latter are appreciably effected by relaxation. For most cases for MCT, MZT, MZS, we consider x (the concentration of Cd or Zn) in the range appropriate for a band gap of 0.1 eV. For defect energy levels, the absolute accuracy of our results is limited, but the precision is good, and hence chemical trends are accurately predicted. For the same reason, defect formation energies are more accurately predicted than energy level position. We attempt, in Appendix B, to calculate vacancy formation energies using relatively simple chemical bonding ideas due to Harrison. However, these results are only marginally accurate for estimating vacancy binding energies. Appendix C lists all written reports and publications produced for the grant. We include abstracts and a complete paper that summarizes our work which is not yet available.
Patterson, James D.↗
High Resolution EUV Emission Spectroscopy of The N2c'v' = 3 and 4 Levels by Electron Impact
The rotational line structure of the band system has been studied by a variety of techniques.
EUV Emission Electron Impact↗
Broken symmetries and excitation spectra of interacting electrons in partially filled Landau levels
Interacting electrons in flat bands give rise to a variety of quantum phases. One fundamental aspect of such states is the ordering of the various flavours – such as spin or valley – that the electrons can undergo and the excitation spectrum of the broken symmetry states that they form. These properties cannot be probed directly with electrical transport measurements. The zeroth Landau level of monolayer graphene with four-fold spin-valley degeneracy is a model system for such investigations, but the nature of its broken symmetry states – particularly at partial fillings – is still not understood. Here, in this study, we demonstrate a non-invasive spectroscopic technique with a scanning tunneling microscope and use it to perform measurements of the valley polarization of the electronic wavefunctions and their excitation spectrum in the partially filled zeroth Landau level of graphene. We can extract information such as the strength of Haldane pseudopotentials that characterize the repulsive interactions underlying the fractional quantum states. Our experiments also demonstrate that fractional quantum Hall phases are built upon broken symmetry states that persist at partial filling. Our experimental approach quantifies the valley phase diagram of the partially filled Landau level as a model flat band platform which is applicable to other graphene-based electronic systems.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Beam-foil excitation of levels in S II and S III.
Electronic levels excitation in S I and II by beam foil method
Bashkin, S.↗
Semi-Automated Diagnosis, Repair, and Rework of Spacecraft Electronics
NASA's Constellation Program for Exploration of the Moon and Mars places human crews in extreme isolation in resource scarce environments. Near Earth, the discontinuation of Space Shuttle flights after 2010 will alter the up- and down-mass capacity for the International Space Station (ISS). NASA is considering new options for logistics support strategies for future missions. Aerospace systems are often composed of replaceable modular blocks that minimize the need for complex service operations in the field. Such a strategy however, implies a robust and responsive logistics infrastructure with relatively low transportation costs. The modular Orbital Replacement Units (ORU) used for ISS requires relatively large blocks of replacement hardware even though the actual failed component may really be three orders of magnitude smaller. The ability to perform in-situ repair of electronics circuits at the component level can dramatically reduce the scale of spares and related logistics cost. This ability also reduces mission risk, increases crew independence and improves the overall supportability of the program. The Component-Level Electronics Assembly Repair (CLEAR) task under the NASA Supportability program was established to demonstrate the practicality of repair by first investigating widely used soldering materials and processes (M&P) performed by modest manual means. The work will result in program guidelines for performing manual repairs along with design guidance for circuit reparability. The next phase of CLEAR recognizes that manual repair has its limitations and some highly integrated devices are extremely difficult to handle and demand semi-automated equipment. Further, electronics repairs require a broad range of diagnostic capability to isolate the faulty components. Finally repairs must pass functional tests to determine that the repairs are successful and the circuit can be returned to service. To prevent equipment demands from exceeding spacecraft volume capacity and skill demands from exceeding crew time and training limits, the CLEAR project is examining options provided by non-real time tele-operations, robotics, and a new generation of diagnostic equipment. This paper outlines a strategy to create an effective repair environment where, with the support of ground based engineers, crewmembers can diagnose, repair and test flight electronics in-situ. This paper also discusses the implications of successful tele-robotic repairs when expanded to rework and reconfiguration of used flight assets for building Constellation infrastructure elements.
Struk, Peter M.↗
Creating a Fully-Electronic GFE Work Authorization Document Process for JSC
JSC’s Electronic Document System (EDS) was published in 2013 by SMA to store and process Task Performance Sheets (TPS), Discrepancy Reports (DR), Hardware Movement Documents (EZT), etc. The 2013 transition turned a fully paper process into an electronic routing one with document level electronic approvals but maintained an in-line paper process . - Today, all work and buy-offs continue to be captured on paper, walked between buildings, and is susceptible to approval errors, a rapidly slowing processing time, and led to projects requesting waivers to use alternate WAD systems, damaging JSC’s QMS. - NT Data Systems team collaborated with multiple platform providers, test user groups, and stakeholders, to find a solution for this growing need in a way that exceeds JSC’s current process, is adaptable to future innovation, and within our limited resource constraints
Nicholas Holaday↗
An electronic strain-level counter for aircraft structural members
Electronic strain level counter for aircraft structural members
Pitts, F. L.↗
Molecular Properties of Thorium Hydrides: Electron Affinities and Thermochemistry
In this work, high-level electronic structure calculations of the ground and low-lying energy electronic states for ThH x and ThH x – for x = 2–5 are reported and compared to available anion photoelectron detachment experiments. The adiabatic electron affinities (EAs) are predicted to be 0.82, 0.88, 0.51, and 2.36 eV for x = 2 to 5, respectively, at the Feller– Peterson–Dixon (FPD) level. The vertical detachment energies (VDEs) are predicted to be 0.84, 0.88, 0.81, and 4.38 eV for x = 2–5, respectively. The corresponding experimental VDEs are 0.871 eV for x = 2, 0.88 eV for x = 3, and 4.09 eV for x = 5. As for ThH, there is a significant spin–orbit (SO) correction for the EA of ThH 2 , and this correction decreases substantially for x > 2. The observed ThH 2 – photoelectron spectrum has many transitions as predicted at the CASPT2-SO level. The FPD bond dissociation energies (BDEs) increase from 67 to 75 kcal/mol for x = 2 to x = 4 at the FPD level. The BDE for ThH 5 is much lower as it is a complex of H 2 with ThH 3 . The hydride affinities for x = 2 to 4 are all comparable and near 70 kcal/mol. A natural bond orbital analysis is consistent with a significant Th + –H– ionic contribution to the Th–H bonds. There is very little participation of the 5f orbitals in the bonding and the valence electrons on the Th are dominated by 7s and 6d for the neutrals and anions except for ThH 2 – where there is a significant contribution from the 7p.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Ultrabright Electron Bunch Injection in a Plasma Wakefield Driven by a Superluminal Flying Focus Electron Beam
Here, we propose a new method for self-injection of high-quality electron bunches in the plasma wakefield structure in the blowout regime utilizing a “flying focus” produced by a drive beam with an energy chirp. In a flying focus the speed of the density centroid of the drive bunch can be superluminal or subluminal by utilizing the chromatic dependence of the focusing optics. We first derive the focal velocity and the characteristic length of the focal spot in terms of the focal length and an energy chirp. We then demonstrate using multidimensional particle-in-cell simulations that a wake driven by a superluminally propagating flying focus of an electron beam can generate GeV-level electron bunches with ultralow normalized slice emittance (~30 nm rad), high current (~17 kA), low slice energy spread (~0.1%), and therefore high normalized brightness (> 10 19 A/ m 2 /rad 2 ) in a plasma of density ~10 19 cm –3 . The injection process is highly controllable and tunable by changing the focal velocity and shaping the drive beam current. Nearterm experiments at FACET II where the capabilities to generate tens of kA, < 10 fs drivers are planned, could potentially produce beams with brightness near 10 20 A / m 2 / rad 2 .
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Component Repair Experiment-1: An Experiment Evaluating Electronic Component-Level Repair During Spaceflight
The Component Repair Experiment-1 (CRE-1) examines the capability for astronauts to perform electronics repair tasks in space. The goal is to determine the current capabilities and limits for the crew, and to make recommendations to improve and expand the range of work that astronauts may perform. CRE-1 provided two-layer, functional circuit boards and replacement components, a small tool kit, written and video training materials, and 1 hr of hands on training for the crew slated to perform the experiment approximately 7 months prior to the mission. Astronauts Michael Fincke and Sandra Magnus performed the work aboard the International Space Station (ISS) in February and March 2009. The astronauts were able to remove and replace components successfully, demonstrating the feasibility of performing component-level electronics repairs within a spacecraft. Several unsuccessful tasks demonstrated areas in need of improvement. These include improved and longer training prior to a mission, an improved soldering iron with a higher operating temperature and steady power source, video training and practice boards for refresher work or practice before a repair, and improved and varied hand tools and containment system.
Easton, John W.↗
Electronic Properties of UN and UN – from Photoelectron Spectroscopy and Correlated Molecular Orbital Theory
In this work, the results of calculations of the properties of the anion UN – including electron detachment are described, which further expand our knowledge of this diatomic molecule. High-level electronic structure calculations were conducted for the UN and UN – diatomic molecules and compared to photoelectron spectroscopy measurements. The low-lying Ω states were obtained using multireference CASPT2 including spin-orbit effects up to ~20,000 cm –1 . At the Feller–Peterson–Dixon (FPD) level, the adiabatic electron affinity (AEA) of UN is estimated to be 1.402 eV and the vertical detachment energy (VDE) is 1.423 eV. The assignment of the UN excited states shows good agreement with the experimental results with a VDE of 1.424 eV. An Ω = 4 ground state was obtained for UN – which is mainly associated with the 3 H ΛS state. Thermochemical calculations estimate a bond dissociation energy (BDE) for UN – (U – + N) of 665.9 kJ/mol, ~15% larger than that of UN and UN + . The NBO analysis reveals U–N triple bonds for the UN, UN – , and UN + species.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Exploration, Prediction, and Experimental Verification of Structure and Optoelectronic Properties in I 2 -Eu-IV-X 4 (I = Li, Cu, Ag; IV = Si, Ge, Sn; X = S, Se) Chalcogenide Semiconductors
Recently, there has been extensive research into photovoltaic, thermoelectric, and nonlinear optical applications of chalcogenide semiconductors within the large set of defect-resistant I 2 -II-IV-X4 (I = Li, Cu, Ag; II = Ba, Sr, Eu, Pb; IV = Si, Ge, Sn; X = S, Se) compounds. Five Eu-including compounds have previously been reported within this family, but a comparative study of possible structures and electronic properties of all 18 Eu-based combinations is still absent. Herein, we use hybrid density functional theory to study rare-earth-including I 2 -II-IV-X 4 semiconductors with Eu on the II site, in order to further understand this family and test the geometric tolerance factor approach (reported in our previous work) as a tool for predicting potential stable structures. We investigate how the exchange mixing parameter of the HSE06 density functional, α, affects the energetic positions of electronic levels, especially of the localized f-electron orbitals near the band edges of the extended semiconductor structures, using literature photoemission and band gap data of EuS for comparison. Lowest-energy quaternary structure candidates, energy band structures, and densities of states are computationally predicted for all 18 materials. Based on its predicted photovoltaics-relevant band gap, the previously unknown compound Cu 2 EuSnSe 4 was selected and synthesized. Furthermore, the experimental structure, lattice parameters, and band gap of Cu 2 EuSnSe 4 are consistent with the computational predictions, confirming a 1.55 eV band gap.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Surface Effects on Pyrene Luminescence Excitation
Pyrene is a polycyclic aromatic hydrocarbon with fluorescence in the 370-400 nm range. The optical properties of pyrene deposited on different substrates were investigated from experimental and theoretical points of view. In contrast to prior studies of surface-enhanced fluorescence, in this work all substrates were semiconductors or insulators. Experimentally, the intensity of photoluminescence (PL) and PL excitation (PLE) spectra were investigated. PLE spectra of pyrene’s monomer emission show that the intensities of the two main absorption peaks vary according to the chosen substrate. Here, calculations for pyrene on zinc sulfide (ZnS) and surface-oxidized diamond suggest that this connection arises from the alignment of the pyrene electronic levels relative to the band edges of the substrate. The absorption peak at 272 nm (4.56 eV) is shown to depend on the HOMO-1→LUMO orbital contribution while the 335 nm (3.70 eV) peak depends upon the HOMO→LUMO transition. When the HOMO-1 level falls inside the substrate valence band, as in the case of ZnS, there is significant hybridization of the molecular state with surface states that causes an enhancement of the 272 nm peak. For pyrene on diamond, however, the HOMO-1 level falls in the substrate bandgap, leading to negligible hybridization and thus no enhancement.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Diol isomer revealed as a source of methyl ketene from propionic acid unimolecular decomposition
Carboxylic acids are important combustion intermediates, especially regarding the combustion of oxygenates such as ethyl esters. The purpose of this study is to discern the unimolecular decomposition pathways of one such carboxylic acid, propionic acid, using microreactor flow experiments with line-tunable photoionization mass spectrometry and infrared spectroscopy, along with high-level electronic structure calculations (CCSD(T)/cc-pV∞Z//M06-2X/cc-pVTZ level of theory) and master equation theory. Here, microreactor experiments were performed at 300–1500 K, pressures decreasing from roughly 300 Torr to vacuum pressure, and around 100 μs residence times. Primary products are methyl ketene, ketene, ethylene, and methyl radical. Theory suggests the two lowest energy bond fissions are active at these conditions and responsible for the production of ketene, methyl radical, and some ethylene. Importantly, theory revealed the significance of the isomerization of propionic acid to propene-1,1-diol, and the subsequent dehydrogenation reaction of the diol as an alternative explanation for the unimolecular formation of methyl ketene. This is predicted to be the dominant thermal decomposition pathway at lower temperatures (up to ~850 K). Line-tunable VUV photons allowed for isomer resolution of the products and showed no evidence of the diol of propionic acid surviving until detection, suggesting propene-1,1-diol decomposes either to methyl ketene and water rapidly, fragments upon ionization to a distonic ion inseparable from methyl ketene through our detection methods, or never stabilizes as propionic acid well-skips directly to methyl ketene. Infrared spectroscopy showed no evidence of the decarboxylation of propionic acid at these conditions. Updated rate constants and branching ratios for propionic acid decomposition are calculated and provided for future modeling studies.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
In-Flight Manual Electronics Repair for Deep-Space Missions
Severe limitations on mass and volume available for spares on long-duration spaceflight missions will require electronics repair to be conducted at the component level, rather than at the sub-assembly level (referred to as Orbital Replacement Unit, or 'ORU'), as is currently the case aboard the International Space Station. Performing reliable component-level repairs in a reduced gravity environment by crew members will require careful planning, and some specialty tools and systems. Additionally, spacecraft systems must be designed to enable such repairs. This paper is an overview of a NASA project which examines all of these aspects of component level electronic repair. Results of case studies that detail how NASA, the U.S. Navy, and a commercial company currently approach electronics repair are presented, along with results of a trade study examining commercial technologies and solutions which may be used in future applications. Initial design recommendations resulting from these studies are also presented.
Pettegrew, Richard↗
Observation of molecular resonant double-core excitation driven by intense X-ray pulses
The ultrashort and intense pulses of X-rays produced at X-ray free electron lasers (XFELs) have enabled unique experiments on the atomic level structure and dynamics of matter, with time-resolved studies permitted in the femto- and attosecond regimes. To fully exploit them, it is paramount to obtain a comprehensive understanding of the complex nonlinear interactions that can occur at such extreme X-ray intensities. Herein, we report on the experimental observation of a resonant double-core excitation scheme in N 2 , where two 1σ core-level electrons are resonantly promoted to unoccupied 1π$^*_g$ molecular orbitals by a single few-femtosecond broad-bandwidth XFEL pulse. The production of these neutral two-site double core hole states is evidenced through their characteristic decay channels, which are observed in good agreement with high-level theoretical calculations. Such multi-core excitation schemes, benefiting from the high interaction cross sections and state- and site-selective nature of resonant X-ray interactions, should be generally accessible in XFEL irradiated molecules, and provide interesting opportunities for chemical analysis and for monitoring ultrafast dynamic processes.
74 ATOMIC AND MOLECULAR PHYSICS↗