On the nonlinear theory of multistream electronic devices
Nonlinear theory of multistream devices - klystron, traveling wave tube, and backward wave oscillator
KLYSTRON↗
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Electronic device increases threshold sensitivity and removes noise from FM communications receiver
Threshold extension device connected between demodulator output and filter output minimizes clicking noise. Device consists of click-eliminating signal transfer channel with follow-and-hold circuit and detector for sensing click impulses. Final output consists of signal plus low level noise without high amplitude impulses.
Conrad, W. M.↗
Hardening electronic devices against very high total dose radiation environments
The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made of the high dose neutron and gamma hardening potential of bipolar, metal insulator semiconductors and junction field effect transistors. Experimental data is presented on device degradation for the high neutron and gamma doses. Previous data and comparisons indicate that the JFET is much more immune to the combined neutron displacement and gamma ionizing effects than other transistor types. Experimental evidence is also presented which indicates that p channel MOS devices may be able to meet the requirements.
Buchanan, B.↗
Use of photoelectronic image formation devices (electron photography, electron optical converters, television)
Electronic image amplification methods are used in variable star observations to increase significantly the volume of recorded information. Electronic cameras are the most efficient, while television cameras increase contrast of weak stars against the background of the sky.
Prokofyeva, V. V.↗
Space processing of crystals for opto-electronic devices: The case for solution growth
The results obtained during a six month program aimed at determining the viability of space processing in the 1980's of dielectric-elastic-magnetic single crystals were described. The results of this program included: identification of some important emerging technologies dependent on dielectric-elastic-magnetic crystals, identification of the impact of intrinsic properties and defects in the single crystals on system performance, determination of a sensible common basis for the many crystals of this class, and identification of the benefits of micro-gravity and some initial experimental evidence that these benefits can be realized in space. It is concluded that advanced computers and optical communications are at a development stage for high demand of dielectric-elastic-magnetic single crystals in the mid-1980's. Their high unit cost and promise for significantly increased perfection by growth in space justified pursuit of space processing.
Hayden, S. C.↗
A survey of particle contamination in electronic devices
The experiences are given of a number of National Aeronautics and Space Administration (NASA) and Space and Missile System Organization (SAMSO) contractors with particle contamination, and the methods used for its prevention and detection, evaluates the bases for the different schemes, assesses their effectiveness, and identifies the problems associated with each. It recommends specific short-range tests or approaches appropriate to individual part-type categories and recommends that specific tasks be initiated to refine techniques and to resolve technical and application facets of promising solutions.
Adolphsen, J. W.↗
Determining mode excitations of vacuum electronics devices via three-dimensional simulations using the SOS code
The SOS code is used to compute the resonance modes (frequency-domain information) of sample devices and separately to compute the transient behavior of the same devices. A code, DOT, is created to compute appropriate dot products of the time-domain and frequency-domain results. The transient behavior of individual modes in the device is then plotted. Modes in a coupled-cavity traveling-wave tube (CCTWT) section excited beam in separate simulations are analyzed. Mode energy vs. time and mode phase vs. time are computed and it is determined whether the transient waves are forward or backward waves for each case. Finally, the hot-test mode frequencies of the CCTWT section are computed.
Warren, Gary↗
X-Ray-Diffraction Tests Of Irradiated Electronic Devices: I
X-ray-diffraction tests performed on aluminum conductors in commercial HI1-507A complementary metal oxide/semiconductor (CMOS) integrated-circuit analog multiplexers, both before and after circuits exposed to ionizing radiation from Co(60) source, and after postirradiation annealing at ambient and elevated temperatures. Tests in addition to electrical tests performed to determine effects of irradiation and of postirradiation annealing on electrical operating characteristics of circuits. Investigators sought to determine whether relationship between effects of irradiation on devices and physical stresses within devices. X-ray diffraction potentially useful for nondestructive measurement of stresses.
Shaw, David C.↗
The Future of Electronic Device Design: Device and Process Simulation Find Intelligence on the World Wide Web
We are on the path to meet the major challenges ahead for TCAD (technology computer aided design). The emerging computational grid will ultimately solve the challenge of limited computational power. The Modular TCAD Framework will solve the TCAD software challenge once TCAD software developers realize that there is no other way to meet industry's needs. The modular TCAD framework (MTF) also provides the ideal platform for solving the TCAD model challenge by rapid implementation of models in a partial differential solver.
Biegel, Bryan A.↗
Fault tolerant approaches based on evolvable hardware and using reconfigurable electronic devices
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evolvable hardware reconfigurable hardware genetic↗
Graded junction termination extensions for electronic devices
A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.
Merrett, J. Neil↗
Graded junction termination extensions for electronic devices
A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.
Merrett, J. Neil↗
Single-Event Latchup Measurements on COTS Electronic Devices for Use in ISS Payloads
This paper reports recent single-event latchup results for a variety of microelectronic devices that include an ADC, OpAmp, EEPROM, CPLD, PWM, transceiver, voltage regulator, digital signal processor, step-down converter, buck controller and supervisory circuits. The data were collected to evaluate these devices for possible use in NASA ISS payloads.
Irom, Farokh↗
The Use of Vacuum Electronic Devices in NASA Missions – IVEC 2020
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Shannon Rodríguez-Sanabria↗
Results on the Fitness and Population Based Fault Tolerance Approaches using Reconfigurable Electronic Devices
The paper presents and compares two approaches to design fault-tolerant evolvable hardware: one based on the fitness definition and the other based on the population statistics.
evolvable↗
Electronic instabilities in metal-insulator semiconductor devices
Electronic charge injection instability in silicon nitride metal-insulator-semiconductor devices
Bridges, J. R.↗
Electron microprobe techniques for failure analysis of silicon planar devices.
Electron microprobe analyzer for failure analysis of silicon planar devices, discussing integrated circuit metallization
Cline, J. E.↗
High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices
An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.
Choi, Sang Hyouk↗