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Simple, inexpensive circuit has been developed which provides active temperature control to certain precision electronic components such as crystal oscillators and Zener diodes.
Decontamination effects of ethylene oxide and thermal sterilization influence on spacecraft polymeric materials and electronic components
Reliability of electronic components in nuclear radiation environment
Test procedures for program to determine reliability of electronic components in nuclear radiation environment
This article reports on preliminary results of a study conducted to examine how temporary electrical overstress seed fault conditions in discrete power electronic components that cannot be detected with reliability tests but impact longevity of the device. These defects do not result in formal parametric failures per datasheet specifications, but result in substantial change in the electrical characteristics when compared with pristine device parameters. Tests were carried out on commercially available 600V IGBT devices using transmission line pulse (TLP) and system level ESD stress. It was hypothesized that the ESD causes local damage during the ESD discharge which may greatly accelerate degradation mechanisms and thus reduce the life of the components. This hypothesis was explored in simulation studies where different types of damage were imposed to different parts of the device. Experimental results agree qualitatively with the simulation for a number of tests which will motivate more in-depth modeling of the damage.
This article discusses several aspects of uncertainty representation and management for model-based prognostics methodologies based on our experience with Kalman Filters when applied to prognostics for electronics components. In particular, it explores the implications of modeling remaining useful life prediction as a stochastic process and how it relates to uncertainty representation, management, and the role of prognostics in decision-making. A distinction between the interpretations of estimated remaining useful life probability density function and the true remaining useful life probability density function is explained and a cautionary argument is provided against mixing interpretations for the two while considering prognostics in making critical decisions.
A telescope consisting of three spark chambers and two control scintillation counters has been designed and is used for investigating the composition of the cosmic ray electron component within the range of energies from 1.0 to 10.0 BeV by the EN assymetry method. The geometrical factor of the telescope is approximately 20 sq cm ster. Discharges are recorded in the chambers on a photo film. The telescope is oriented to the azimuth with an accuracy of + or - 3 deg.
Mechanized data reduction system has been designed to take advantage of the data handling capacity of computers and to reduce voluminous and unrelated test and performance data to a format useful for the rapid analysis of electronic component reliability.
The synchronous orbit of the IUE carries the satellite through Earth's outer electron belt. A 40 mCi Sr90 source was used to simulate these electrons. A 5 mCi source of Co60 was used to simulate bremmstrahlung. A 10 MeV electron Linac and a 1.7 MeV electron Van de Graaf wer used to investigate the energy dependence of radiation effects and to perform radiations at a high flux rate. A 100 MeV proton cyclotron was used to simulate cosmic rays. Results are presented for three instrument systems of the IUE and measurements for specific components are reported. The three instrument systems were the ultraviolet converter, the fine error sensor (FES), and the SEC vidicon camera tube. The components were optical glasses, electronic components, silicon photodiodes, and UV window materials.
We have developed a range of techniques useful for constructing analog and digital circuits for operation in a liquid Helium environment (4.2K), using commercially available low power components. The challenges encountered in designing cryogenic electronics include finding components that can function usefully in the cold and possess low enough power dissipation so as not to heat the systems they are designed to measure. From design, test, and integration perspectives it is useful for components to operate similarly at room and cryogenic temperatures; however this is not a necessity. Some of the circuits presented here have been used successfully in the MUSTANG and in the GISMO camera to build a complete digital to analog multiplexer (which will be referred to as the Cryogenic Address Driver board). Many of the circuit elements described are of a more general nature rather than specific to the Cryogenic Address Driver board, and were studied as a part of a more comprehensive approach to addressing a larger set of cryogenic electronic needs.
This paper will give a description and status of the Advanced Power Electronics Materials and Components Technology program being conducted by the NASA Glenn Research Center for future aerospace power applications. The focus of this research program is on the following: 1) New and/or significantly improved dielectric materials for the development of power capacitors with increased volumetric efficiency, energy density, and operating temperature. Materials being investigated include nanocrystalline and composite ceramic dielectrics and diamond-like carbon films; 2) New and/or significantly improved high frequency, high temperature, low loss soft magnetic materials for the development of transformers/inductors with increased power/energy density, electrical efficiency, and operating temperature. Materials being investigated include nanocrystalline and nanocomposite soft magnetic materials; 3) Packaged high temperature, high power density, high voltage, and low loss SiC diodes and switches. Development of high quality 4H- and 6H- SiC atomically smooth substrates to significantly improve device performance is a major emphasis of the SiC materials program; 4) Demonstration of high temperature (> 200 C) circuits using the components developed above.
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Long term variations of primary cosmic ray electron flux density from balloon-borne counter telescope data, noting absence of solar modulation
A total dose analysis for exposure of electronic parts at the box level is presented for the Hubble Space Telescope. This was done using solid angle sectoring/3-dimensional ray trace and Monte Carlo radiation transport simulations. Results are discussed in terms of parts that are potential total dose concerns.
Energy distribution functions have been derived from energetic (30-2000 keV) electron fluxes observed simultaneously by three geosynchronous orbit satellites throughout the year 1986. These distributions, as well as others derived from empirical models of outer magnetospheric electron fluxes, can be resolved into two distinct relativistic Maxwellian components which are each fully parameterized by a density and a temperature. A four-parameter characterization is presented which provides a new, simplified procedure for the interpretation of energetic electron data in the outer magnetosphere.
Basic questions for radiation effects in electronics are addressed.
The JPL Preferred Parts List was prepared to provide a basis for selection of electronic parts for JPL spacecraft programs. Supporting tests for the listed parts were designed to comply with specific spacecraft environmental requirements. The list tabulates the electronic, magnetic, and electromechanical parts applicable to all JPL electronic equipment wherein reliability is a major concern. The parts listed are revelant to equipment supplied by subcontractors as well as fabricated at the laboratory.
One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. Several theoretical proposals aimed to elucidate this phenomenon have been put forth, a notable one being phase separation and an associated percolation-induced Mott insulator-metal transition. In the present work we study the prototypical doped Mott-insulating rare-earth titanate YTiO 3 , in which the insulating state survives up to a large hole concentration of 35%. Single crystals of Y 1-x Ca x TiO 3 with 0 ≤ x ≤ 0.5, spanning the insulator-metal transition, are grown and investigated. Using x-ray absorption spectroscopy, a powerful technique capable of probing element-specific electronic states, we find that the primary effect of hole doping is to induce electronic phase separation into hole-rich and hole-poor regions. The data reveal the formation of electronic states within the Mott-Hubbard gap, near the Fermi level, which increase in spectral weight with increasing doping. From a comparison with DFT+U calculations, we infer that the hole-poor and hole-rich components have charge densities that correspond to the insulating x = 0 and metallic x ~ 0.5 states, respectively, and that the new electronic states arise from the metallic component. Our results indicate that the doping-induced insulator-metal transition in Y 1-x Ca x TiO 3 is indeed percolative in nature, and thus of inherent first-order character.