High aspect ratio structures enabled by backside illumination of SU-8
Explore the source record for details and available documents.
SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Explore the source record for details and available documents.
Abstract not provided.
Abstract not provided.
Abstract not provided.
A method for electroplating a nonmetallic grating including providing a nonmetallic grating; performing an atomic layer deposition (ALD) reaction to form a seed layer on the nonmetallic grating; and electroplating a metallic layer on the seed layer such that the metallic layer uniformly and conformally coats the nonmetallic grating. An apparatus including a silicon substrate having gratings with an aspect-ratio of at least 20:1; a atomic layer deposition (ALD) seed layer formed on the gratings; and an electroplated metallic layer formed on the seed layer, wherein the electroplated metallic layer uniformly and conformally coats the gratings.
An example material includes a planar layer of MFI zeolite. The planar layer has a thickness in a range between 4 nm and 10 nm for at least 70% of a basal area of the planar layer. In one embodiment, the planar layer includes an embedded particle of an MFI zeolite.
Explore the source record for details and available documents.
In this work, we present a demonstration of a high-aspect ratio, three-dimensionally structured betavoltaic device. High-aspect ratio silicon PIN diodes were used as the semiconductor absorber and 147 PmCl 3 was used as the beta emitter. Three devices were fabricated with 147 Pm activities of 2.4 mCi, 7.4 mCi, and 29.5 mCi. The device with the highest activity produced an initial power output of 200 nW and was monitored over a period of 8 months to observe the current–voltage behavior over time, during which time the output current decreased in accordance with the radioactive half-life of 147 Pm. Small deviations in the output current of a few percent during the long-term measurement were found to be attributable to the humidity in the room where the experiment was done. Furthermore, the output current generated from the devices was 68–77% of the theoretical maximum, indicating significant infiltration of the radioisotope into the ridged structures.
Abstract This letter solves a major hurdle that mars photolithography-based fabrication of micro-mesoscale structures in silicon. Conventional photolithography is usually performed on smooth, flat wafer surfaces to lay a 2D design and subsequently etch it to create single-level features. It is, however, unable to process non-flat surfaces or already etched wafers and create more than one level in the structure. In this study, we have described a novel cleanroom-based process flow that allows for easy creation of such multi-level, hierarchical 3D structures in a substrate. This is achieved by introducing an ultra-thin sacrificial silicon dioxide hardmask layer on the substrate which is first 3D patterned via multiple rounds of lithography. This 3D pattern is then scaled vertically by a factor of 200–300 and transferred to the substrate underneath via a single shot deep etching step. The proposed method is also easily characterizable—using features of different topographies and dimensions, the etch rates and selectivities were quantified; this characterization information was later used while fabricating specific target structures. Furthermore, this study comprehensively compares the novel pattern transfer technique to already existing methods of creating multi-level structures, like grayscale lithography and chip stacking. The proposed process was found to be cheaper, faster, and easier to standardize compared to other methods—this made the overall process more reliable and repeatable. We hope it will encourage more research into hybrid structures that hold the key to dramatic performance improvements in several micro-mesoscale devices.
Solution-based SERS detection by using a portable Raman instrument has emerged as an important tool due to its simplicity, and flexibility for rapid and on-site screening of analyte molecules. However, this method has several shortcomings, including poor sensitivity especially for weak-affinity analyte molecules, where there is no close contact between the plasmonic metal surface and analyte molecule. Examples of weak-affinity molecules include pigment molecules that are commonly used as a consumable coloring agent, such as allura red (AR), and sunset yellow (SY). As high consumption of colorant agents has been shown to cause adverse effects on human health, there is a strong need to develop a simple and practical sensing system with high sensitivity for these agents. Here we present a novel, highly sensitive solution-based SERS detection method for AR, and SY by using CTAC capped gold nanostars (GNS) having different aspect ratios (GNS-2, GNS-4, and GNS-5) without utilizing any aggregating agents which can enhance SERS signal however it reduces batch to batch reproducibility. The influence of the aspect ratio of GNS on SERS properties was investigated. We have achieved a limit of detection (LOD) of AR and SY as low as 0.5 and 1 ppb, respectively by using GNS-5 with the advantages of minimal sample preparation by just mixing the analyte solution into a well plate containing GNS solution. In addition, excellent colloidal stability and reproducibility have further enhanced the applicability in real-world samples. Altogether, our results evidence that the solution-based SERS detection platform using high aspect-ratio GNS can be applied for practical application to detect pigment molecules in real samples with satisfactory results.
In this study, we address the challenge of enhancing image quality and spatial resolution in computed tomography (CT) imaging by introducing simulation and fabrication of high aspect ratio, point-like transmission targets. Utilizing advanced electroplating techniques, traditionally employed in the fabrication of Through Substrate Via (TSV) interconnects for CMOS circuitry, we successfully embed copper targets within silicon substrates. This method allows us to create high-aspect-ratio features specifically designed for X-ray transmission targets, resulting in micro targets that exhibit a volume increase compared to conventional evaporated surface targets. Furthermore, we present simulation results of the X-ray spectrum generated by these targets, demonstrating their potential to significantly improve both image quality and spatial resolution in CT applications. Our findings suggest that leveraging advanced fabrication techniques can open new avenues for the development of enhanced imaging technologies in medical diagnostics and beyond.
Zone plates are diffractive optics commonly used in X-ray microscopes. Here, we present a wet-chemical approach for fabricating high aspect ratio Pd/Si zone plate optics aimed at the hard X-ray regime. A Si zone plate mold is fabricated via metal-assisted chemical etching (MACE) and further metalized with Pd via electroless deposition (ELD). MACE results in vertical Si zones with high aspect ratios. The observed MACE rate with our zone plate design is 700 nm/min. The ELD metallization yields a Pd density of 10.7 g/cm 3 , a value slightly lower than the theoretical density of 12 g/cm 3 . Fabricated zone plates have a grid design, 1:1 line-to-space-ratio, 30 nm outermost zone width, and an aspect ratio of 30:1. At 9 keV X-ray energy, the zone plate device shows a first order diffraction efficiency of 1.9%, measured at the MAX IV NanoMAX beamline. With this work, the possibility is opened to fabricate X-ray zone plates with low-cost etching and metallization methods.
We report two magnetized liner inertial fusion (MagLIF) experiments that produced record thermonuclear D–D neutron yields of 2.11×10 13 and 2.33×10 13 . These yields are about a factor of two higher than previous MagLIF results. The experiments achieved ion temperatures of 3.0 and 3.3 keV and stagnation pressures of 1.6 and 1.3 Gbar. The inferred Lawson parameters were χ=0.2 and 0.1, which are the largest reported for MagLIF. The performance increase used a high-aspect-ratio beryllium liner with a dielectric coating and modest increases in preheat energy (∼2.2 kJ), peak current (18.5 MA), and axial magnetic field (15 T). Three-dimensional HYDRA simulations are consistent with the measured liner dynamics and fusion outputs. These results indicate a pathway to higher-yield MagLIF designs using coated, high-aspect-ratio liners and improved input parameters. Simulations further suggest that adding an ice fuel layer could increase yield by up to a factor of 2.5 by reducing liner convergence, instability feedthrough, and mix.
Graphene grown slowly on Ge(0 0 1) using chemical vapor deposition of hydrocarbons leads to high-aspect ratio graphene nanoribbons with smooth edges and a technologically relevant band gap at room temperature; however, the driving forces leading to one-dimensional growth of such graphene crystals are not well understood. Here, we combine a lattice kinetic Monte Carlo approach based on steps in graphene growth and experimental measurements to study the growth of graphene nanoribbons via chemical vapor deposition on Ge(0 0 1). To identify potential reasons for growth of graphene as anisotropic ribbons, we study the impact of anisotropy in various growth parameters on the resulting graphene crystals. Comparing our model with experimental measurements indicates that anisotropy in the stabilization of a graphene precursor species bound to the graphene edge is the most likely reason why high aspect ratio graphene ribbons with smooth edges grow on Ge(0 0 1). Using the growth model developed here, we reproduce experimental trends in the synthesis of graphene nanoribbons on Ge(001) and arrive at an intuitive picture for their growth. These insights shed light on the driving forces governing this highly anisotropic regime of crystal growth.
The relationship between mechanical stress states and interfacial electrochemical thermodynamics of Li metal/Li 6.5 La 3 Zr 1.5 Ta 0.5 O 12 and Na metal/ Na-β”-Al 2 O 3 systems are examined in two experimental configurations with an applied uniaxial load; the solid electrolytes are pellets and the metal electrodes high-aspect-ratio electrodes. The experimental results demonstrate that 1) the change in equilibrium potential at the metal/electrolyte interface, when stress is applied to the metal electrode, is linearly proportional to the molar volume of the metal electrode, and 2) the mechanical stress in the electrolyte has a negligible effect on the equilibrium potential for an experimental setup in which the electrolyte is stressed and the electrode is left unstressed. Solid mechanics modeling of a metal electrode on a solid electrolyte pellet indicates that pressure and normal stress are within ≈0.5 MPa of each other for the high aspect ratio (≈1:100 thickness:diameter in our study) Li metal electrodes under loads that exceed yield conditions. Furthermore, this work should aid in advancing the quantitative understanding of alkali metal dendrite formation within incipient cracks and their subsequent growth, and pore formation upon stripping, both situations where properly accounting for the impact of mechanical state on the equilibrium potential is of critical importance for calculating the current distribution.
Thermal management has become a major barrier in the development of high-power micro-devices. Microchannel heat sinks (MCHS) are a promising method to dissipate high heat fluxes from high power density devices. Reducing the thermal resistance will reduce the temperature increase of the electronic device, allowing for higher powers to be achieved while maintaining a safe operating temperature. This paper reports on the use of silicon carbide (Sic) microchannels to dissipate high heat fluxes up to 1 kW/cm 2 over a footprint of 0.25 cm 2 . The use of high aspect ratio and decreased hydraulic diameter channels has allowed for very low thermal resistances to be achieved at higher heat duties compared to previous studies. The experiments performed resulted in heater temperatures of less than 60 °C and thermal resistances as low as 0.024 cm 2 . ° $C$/W between the heater surface and fluid inlet temperature. In conclusion, the demonstrated thermal performance of the SiC MCHS is an encouraging means for dissipating heat from high power density microelectronic devices.
Dimensional tolerances for high-speed-machined aluminum products continue to tighten due to the demand for automated assembly of complex monolithic parts in aerospace and other industries. Understanding the contribution of inherent residual stress in wrought Al 7050-T7451 plate, common in aircraft manufacture, to distortion of high-aspect-ratio machined parts is critical but remains problematic due to the alloy's low residual stress magnitude over large geometries. Prior investigations into residual stress effects on machined part distortion suffer inadequate characterizations of the wrought material stress field, either because of low fidelity due to “slitting” methods, confounding effects in machined-layer removal methods, or small sample size when using neutron diffraction (ND). In this work, inherent residual stress is measured via ND at 860 locations in a 90.5 mm thick Al 7050-T7451 plate having dimensions 399 mm in the rolling direction and 335 mm in the transverse direction. Unlike prior studies, the ND residual stress is reconstructed using an iterative algorithm to ensure fully compatible, equilibrated 3D field prior to examining its effect on distortion. Further, the findings from simulations and experiments show that inherent residual stress alone could distort a high-aspect-ratio part beyond aerospace industry requirements, that slitting measurements may not sufficiently characterize residual stress for predicted distortion, and that parts machined from different plate thickness locations could exhibit reversed distortion patterns. Thus, research into distortion prediction that considers machining should carefully characterize and reconstruct inherent residual stress so that the coupled machining effects are accurately modeled.
A limited understanding regarding the underlying dynamics and mechanisms of material removal during continuous wave laser drilling has presented significant challenges in achieving precision and process control. Here, to address this, we employed high-fidelity, in situ synchrotron x-ray imaging to reveal previously unknown material behaviors during continuous wave laser drilling with power modulation. Our findings highlight that high-aspect ratio drill holes are achieved when the laser modulation frequency falls within the range of 8–12 kHz, provided that the laser average power and modulation amplitude levels meet the specified limits. Under these conditions, we identified a material removal mechanism driven by incremental accumulation of recoil pressure that gradually pushes material upward from deep within the substrate to the surface. This mechanism manifested as a low-frequency fluctuation in the vapor depression depth, resulting in periodic instances of material ejection. Furthermore, our study underscores that rapid expansion of the melt pool and the widening of the drill hole opening can impede effective material removal by redirecting energy from material ejection to increasing the melt pool size. This investigation contributes essential insights into the subsurface dynamics involved in the drilling of high-aspect ratio holes, furthering our fundamental understanding of this intricate process.