Resistance in the mixed state of type-II SUPERCONDUCTORS.
Pinning fluxoids by spatial inhomogeneities of Tl-Pb and Pb-In alloys, noting I-H CHARACTERISTICS and type II superconductor resistance
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Pinning fluxoids by spatial inhomogeneities of Tl-Pb and Pb-In alloys, noting I-H CHARACTERISTICS and type II superconductor resistance
Pressure composition diagrams of thallium rich portion of thallium-indium system at high pressure-temperature
The friction and wear characteristics were determined for copper binary alloys containing 10 atomic percent aluminum, silicon, indium, and tin. A ternary alloy containing 10 atomic percent aluminum and 5 atomic percent silicon was also examined. The effectiveness of each of the alloying elements aluminum and silicon were very effective in reducing friction. Silicon, however, also reduced wear appreciably. With lubrication, silicon, indium, and tin were all effective alloying elements in reducing friction and wear from values obtained for copper. Silicon was the most effective single element in reducing friction and wear in dry sliding and with lubrication.
Commercial and laboratory neutron detection systems use indirect neutron response of materials like pressurized helium-3 (via nuclear reaction 3He(n, p)3H) to measure and count neutrons emanating from a source. Recently a host of semiconductors, especially a ternary semiconductor of lithium indium diselenide (6LiInSe2) and a quaternary alloy of enriched lithium-6, indium, phosphorous, and selenium (6LiInP2Se6), have shown promising neutron counting possibilities by directly converting neutrons into charge-carrying elements within the body of the semiconductor. These semiconductors have high thermal neutron capture cross sections, suitable energy bandgaps (~2.0 electron volts) for room-temperature operations, and a favorable electronic band structure for efficient electron charge transport. The article examines the semiconductor properties of these compounds in terms of their neutron counting capabilities and possible ways to extract neutron energy information from them. Lithium-6 and boron-10 (with thermal neutron absorption cross sections of 938 ± 6 and 3855 ± 26 barns, respectively) produce charged particles to be measured via indirect neutron interactions. The efficiency of indirect conversion neutron detectors is limited because of the inefficiencies in conversion mechanism. In case of direct conversion, the neutrons create charged particles in a single material for neutron capture and charge collection, increasing detection efficiency. Unlike 3He proportional counters, which provide no neutron energy information, the semiconductors can be used as neutron energy spectrometer. Fully resolved neutron energy by 6LiInP2Se6 from a plutonium-beryllium source has been reported in the literature. We will discuss the influence of these multilayered semiconductors’ crystallographic structures and growth techniques on neutron energy determination.
The electrochemical reduction of CO 2 into fuels using renewable electricity presents an opportunity to utilize captured CO 2 . Electrocatalyst development has been a primary focus of research in this area. This is especially true at the nanoscale, where researchers have focused on understanding nanostructure-property relationships. However, electrocatalyst structure may evolve during operation. Indium- and tin-based oxides have been widely studied as electrocatalysts for CO 2 reduction to formate, but evolution of these catalysts during operation is not well-characterized. Here, we report the evolution of nanoscale structure of precise tin-doped indium oxide nanocrystals under CO 2 reduction conditions. We show that sparse monolayer nanocrystal films desorb from the electrode upon charging, but thicker nanocrystal films remain, likely due to an increased number of physical contacts. Upon applying a cathodic voltage of –1.0 V vs RHE or greater, the original 10-nm diameter nanocrystals are no longer visible, and instead form a larger microstructural network. Elemental analysis suggests the network is an oxygen-deficient indium-tin metal alloy. We hypothesize that this morphological evolution is the result of nanocrystal sintering due to oxide reduction. Furthermore, these data provide insights into the morphological evolution of tin-doped indium oxide nanocrystal electrocatalysts under reducing conditions and highlight the importance of post-electrochemical structural characterization of electrocatalysts.
The Liquid Mixing Experiment had as its objective the observation of effects of residual acceleration on a confined fluid system. The fluid system was chosen to be similar geometrically and in fluid properties to a range of materials science experiments. Samples were constructed as cylinders 2.2 cm long by 0.6 cm diameter. Half of each cylinder was composed of pure indium, and the other half of each was an alloy of 80 wt% indium and 25 wt% lead. The samples were enclosed in aluminum cartridges and placed in heaters mounted in three mutually perpendicular directions. The experimental procedure consisted of melting the samples when the low-g phase of the payload trajectory was attained, holding the samples in a molten state for approximately 200 seconds, and then quenching to resolidification before leaving low-g. Two of the samples exhibited very little fluid motion. The third sample, which was oriented nearly parallel to a payload radius, showed a great deal of flow.
We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.
The objective is to characterize the fracture behavior and to define the fracture mechanisms for new Al-Li-Cu alloys, with emphasis on the role of indium additions and cryogenic temperatures. Three alloys were investigated in rolled product form: 2090 baseline and 2090 + indium produced by Reynolds Metals, and commercial AA 2090-T81 produced by Alcoa. The experimental 2090 + In alloy exhibited increases in hardness and ultimate strength, but no change in tensile yield strength, compared to the baseline 2090 composition in the unstretched T6 condition. The reason for this behavior is not understood. Based on hardness and preliminary Kahn Tear fracture experiments, a nominally peak-aged condition was employed for detailed fracture studies. Crack initiation and growth fracture toughness were examined as a function of stress state and microstructure using J(delta a) methods applied to precracked compact tension specimens in the LT orientation. To date, J(delta a) experiments have been limited to 23 C. Alcoa 2090-T81 exhibited the highest toughness regardless of stress state. Fracture was accompanied by extensive delamination associated with high angle grain boundaries normal to the fatigue precrack surface and progressed microscopically by a transgranular shear mechanism. In contrast the two peak-aged Reynolds alloys had lower toughness and fracture was intersubgranular without substantial delamination. The influences of cryogenic temperature, microstructure, boundary precipitate structure, and deformation mode in governing the competing fracture mechanisms will be determined in future experiments. Results contribute to the development of predictive micromechanical models for fracture modes in Al-Li alloys, and to fracture resistant materials.
The direct conversion of carbon dioxide (CO 2 ) into methanol via hydrogenation is essential for industrial applications. Recent studies on catalysts that contain an inverse oxide/metal configuration have shown very good catalytic performance for the CO 2 hydrogenation to methanol process. Here, in this study, we investigated the behavior of indium oxide-Cu(111) interfaces under pure CO 2 and CO 2 /H 2 mixtures using synchrotron-based ambient-pressure X-ray photoelectron spectroscopy (AP-XPS). Initially, a single layer of copper oxide (Cu x O) was grown on the Cu(111) surface by controlled oxidation. On this surface, indium was deposited at room temperature. Oxygen atoms transferred from Cu x O/Cu(111) to the indium metal upon deposition, forming In-O-Cu bonds and active interfaces. Although Cu(111) is not very active for the binding and activation of CO 2 , the formed InO x -Cu(111) interfaces had no problem adsorbing and dissociating the molecule at room temperature. Reaction of CO 2 with H 2 on InO x -Cu(111) yielded surface-bound H 3 CO, CO 2 δ− , CO 3 , and CH x species that are typical intermediates in the production of methanol and other oxygenates. The InO x -Cu(111) interface underwent dynamic chemical changes under reaction conditions, forming In-Cu alloys at low indium coverages (< 0.05 monolayer), while at higher indium coverages a mixture of an In-Cu and InO x was detected in XPS. These findings indicate that InO x /In-Cu interfaces can play a key role in processes aimed at the trapping and valorization of CO 2 .
Indium oxide has received attention as an exciting candidate for catalyzing the CO 2 hydrogenation to methanol due to its high selectivity (>80%). Compared to the extent of research on the activity of indium oxide-based powder catalysts, very little is known about the phenomena associated with the formation of surface alloys involving indium or the growth mechanism for indium oxide nanoparticles. In this report, scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) were employed to elucidate the growth mode, structure, and chemical state of In/Au(111) alloys and InO x /Au(111) inverse model catalysts. Here, our study reveals distinct morphological differences between In/Au(111) and InO x /Au(111), and the InO x structure also depends strongly on the preparation conditions. In/Au surface alloy systems with extremely low coverage (0.02 ML) form islands preferentially on the elbow sites of reconstructed Au(111) herringbone, regardless of hcp and fcc stacking. At higher coverage (0.1 ML), the In islands expand over the herringbone in the <110> direction and create two dimensional domain structures over the entire surfaces. Moreover, this 2D domain structure is disturbed by temperature with high dispersion of indium atoms observed during the annealing process. Oxidation of the In/Au(111) surface alloys with O 2 at 550 K produces InO x /Au(111) systems which contain various sizes of InO x aggregates (from 0.7 to 10 nm). On the other hand, InO x /Au(111) surfaces prepared by vapor deposition of In at 550 K in an O 2 background exhibit highly dispersed and uniformly small InO x particles (~1 nm). Both InO x systems were confirmed to be partially oxidized by XPS.
The dominant chemistries of lithium-ion batteries on the market today still rely on flammable organic liquid electrolytes and cathodes containing scarce metals, such as cobalt or nickel, raising safety, cost and environmental concerns. Here we show a FeCl 3 cathode that costs as little as 1% of the cost of a LiCoO 2 cathode or 2% of a LiFePO 4 cathode. Once coupled with a solid halide electrolyte and a lithium-indium (Li–In) alloy anode, it enables all-solid-state lithium-ion batteries without any liquid components. Notably, FeCl 3 exhibits two flat voltage plateaux between 3.5 and 3.8 V versus Li + /Li, and the solid cell retains 83% of its initial capacity after 1,000 cycles with an average Coulombic efficiency of 99.95%. Combined neutron diffraction and X-ray absorption spectroscopy characterizations reveal a Li-ion (de)intercalation mechanism together with a Fe 2+ /Fe 3+ redox process. Further, our work provides a promising avenue for developing sustainable battery technologies with a favourable balance of performance, cost and safety.
Meteorites can contain a wide range of material phases due to the extreme environments found in space and are ideal candidates to search for natural superconductivity. However, meteorites are chemically inhomogeneous, and superconducting phases in them could potentially be minute, rendering detection of these phases difficult. To alleviate this difficulty, we have studied meteorite samples with the ultrasensitive magnetic field modulated microwave spectroscopy (MFMMS) technique [J. G. Ramírez, A. C. Basaran, J. de la Venta, J. Pereiro, I. K. Schuller, Rep. Prog. Phys. 77, 093902 (2014)]. Here, we report the identification of superconducting phases in two meteorites, Mundrabilla, a group IAB iron meteorite [R. Wilson, A. Cooney, Nature 213, 274–275 (1967)] and GRA 95205, a ureilite [J. N. Grossman, Meteorit. Planet. Sci. 33, A221–A239 (1998)]. MFMMS measurements detected superconducting transitions in samples from each, above 5 K. By subdividing and remeasuring individual samples, grains containing the largest superconducting fraction were isolated. The superconducting grains were then characterized with a series of complementary techniques, including vibrating-sample magnetometry (VSM), energy-dispersive X-ray spectroscopy (EDX), and numerical methods. Finally, these measurements and analysis identified the likely phases as alloys of lead, indium, and tin.
We develop lattice-mismatched GaInAsP as an alternative alloy to pure As-based alloys currently used in III-V multijunction solar cells. Increasing the alloy phosphorous and indium content while maintaining an optimal bandgap may allow high efficiency multijunction devices with increased radiation hardness. Here, 1.0-eV GaInAsP is developed and implemented into single and multijunction solar cell devices. The lattice-mismatched GaInAsP must be grown strain free, and the subcell thickness must be maintained below the thickness where surface-driven phase separation occurs. As observed in transmission electron microscopy and cathodoluminescence imaging, phase separation strengthens in the GaInAsP layer and leads to interfacial defect formation when the cell thickness is too great. We show single junction 1.0-eV Ga 0.5 In 0.5 As 0.7 P 0.3 with excellent carrier collection and a bandgap-voltage offset of 0.40 V. This material quality approaches that of 1.0-eV Ga 0.7 In 0.3 As used in inverted metamorphic multijunction devices, but has increased phosphorus content and consequently is expected to have a higher radiation resistance. We incorporate the 1.0-eV GaInAsP subcell into a 3-junction inverted metamorphic solar cell to test the performance of the subcell in a multijunction. No additional loss is observed upon integration into a multijunction cell: both the carrier collection and voltage of the GaInAsP subcell are unchanged from single junction devices. While further materials development and radiation testing is still required, these preliminary results indicate that lattice-mismatched GaInAsP can be effectively used in multijunction solar cells to replace radiation-soft materials.
A high temperature thin film strain gage sensor capable of functioning at temperatures above 1400.degree. C. The sensor contains a substrate, a nanocomposite film comprised of an indium tin oxide alloy, zinc oxide doped with alumina or other oxide semiconductor and a refractory metal selected from the group consisting of Pt, Pd, Rh, Ni, W, Ir, NiCrAlY and NiCoCrAlY deposited onto the substrate to form an active strain element. The strain element being responsive to an applied force.
Gold-nickel brazing alloy, with 5 percent indium added to depress the melting point, is used for brazing of nickel-clad silver electrical conductors which operate at temperatures to 1200 deg F. Alloy has low resistivity, requires no flux, and is less corrosive than other gold-nickel, gold-copper alloys.
Gold films are used as an alloying flux to form 5-micron-thick indium film seals at temperatures below 300 C. Pyrex was sealed to quartz, ULE, CER-VIT, Irtran 2, Ge, GaAs, Invar, Kovar, Al, and Cu. The seals can also be used as current feedthroughs and graded seals.
With rotated disk-and-ring equipment, polarograms and other electrochemical measurements were made of oxygen reduction in 1-molar potassium hydroxide on an equiatomic gold-copper (Au-Cu) alloy and a Au-Cu alloy doped with either indium (In) or cobalt (Co) and on Au doped with either nickel (Ni) or platinum (Pt). The results were compared with those for pure Au and pure Pt. The two-electron reaction dominated on all Au alloys as it did on Au. The polarographic results at lower polarization potentials were compared, assuming exclusively a two-step reduction. A qualified ranking of cathodic electrocatalytic activity on the freshly polished reduced disks was indicated: anodized Au Au-Cu-In Au-Cu Au-Cu-Co is equivalent or equal to Au-Pt Au-Ni. Aging in distilled water improved the electrocatalytic efficiency of Au-Cu-Co, Au-Cu, and (to a lesser extent) Au-Cu-In.
Diffusion-bonded joints between gold-plated Kovar leads and indium-plated copper circuit pads offer some advantages for electronic circuit packaging. Test results show that consistent high strength bonds stronger than the copper circuit foil are achieved by parallel-gap bonding at relatively low power settings. The bonds are basically formed by the alloying of the gold, indium and copper at the bond interface. Other low melting metals such as tin can also be used; however, tin does not offer the ease of bonding that results in consistent separation of the copper foil during pull testing. The investigation was conducted in three parts consisting of: (1) an evaluation of the physical strength of resulting bonds at ambient and elevated temperature, (2) a metallurgical analysis of bonds using scanning electron microscopy and nondispersive X-ray analysis, and (3) evaluation and development of various schemes for multiple lead flatpack bonding.