Search NASA⌕ Search

SEARCH · Search NASA

Results for “INDIUM ALLOY”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

The effects of gravity level during directional solidification on the microstructure of hypermonotectic Al-In-Sn alloys

Five hypermonotectic Al-In-Sn compositions were directionally solidified in a Bridgman-type furnace at normal gravity and during aircraft low-gravity maneuvers. The tendency of the Al-30In alloy to form an indium-rich band at the start of unidirectional growth (SUG) made it difficult to study the integration of L sub 2 into the solidification interface. Hypermonotectic compositions closer to monotectic slightly hypermonotectic caused only a partial band on L sub 2 to form at SUG and allowed the study of such variables as gravity, composition, and monotectic dome height on integration of excess L sub 2 into the solid plus L sub 2 interface. It was found that formation of aligned composite structures for the Al-In-Sn system is not only a function of G and R but also of the degree to which the composition varies from monotectic. Most of the aligned fibrous structures formed from hypermonotectic Al-In-Sn had spacings that were of the order of irregular fibrous structures reported for on monotectic Al-In-Sn. The spacings for the large fibers and aligned globules found for ground and low-gravity processed Al-In-18-Sn-22, respectively, were significantly larger than the others measured and were of the order expected for cell spacings under the growth conditions utilized. It was found that the integration into the solidification front of excess L sub 2 in low gravity was a function of the Sn composition of the alloy.

Curreri, P. A.↗
NASA NTRS1980

Method of epitaxially depositing cadmium sulfide

A single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium as the solvent.

Hawrylo, Frank Z.↗
NASA NTRS2007

Improved Sensing Coils for SQUIDs

An improvement in the design and fabrication of sensing coils of superconducting quantum interference device (SQUID) magnetometers has been proposed to increase sensitivity. It has been estimated that, in some cases, it would be possible to increase sensitivity by about half or to reduce measurement time correspondingly. The pertinent aspects of the problems of design and fabrication can be summarized as follows: In general, to increase the sensitivity of a SQUID magnetometer, it is necessary to maximize the magnetic flux enclosed by the sensing coil while minimizing the self-inductance of this coil. It is often beneficial to fabricate the coil from a thicker wire to reduce its self-inductance. Moreover, to optimize the design of the coil with respect to sensitivity, it may be necessary to shape the wire to other than a commonly available circular or square cross-section. On the other hand, it is not practical to use thicker superconducting wire for the entire superconducting circuit, especially if the design of a specific device requires a persistent-current loop enclosing a remotely placed SQUID sensor. It may be possible to bond a thicker sensing-coil wire to thinner superconducting wires leading to a SQUID sensor, but it could be difficult to ensure reliable superconducting connections, especially if the bonded wires are made of different materials. The main idea is to mold the sensing coil in place, to more nearly optimum cross sectional shape, instead of making the coil by winding standard pre-fabricated wire. For this purpose, a thin superconducting wire loop that is an essential part of the SQUID magnetometer would be encapsulated in a form that would serve as a mold. A low-melting-temperature superconducting metal (e.g., indium, tin, or a lead/tin alloy) would be melted into the form, which would be sized and shaped to impart the required cross section to the coil thus formed.

Penanen, Konstantin↗
NASA NTRS1981

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. I - Defect structure of undoped and copper doped Hg/0.8/Cd/0.2/Te. II - Defect structure of indium-doped Hg/0.8/Cd/0.2/Te

Hall effect and mobility measurements were conducted on undoped Hg(0.8)Cd(0.2)Te crystals which were quenched to room temperature after being subjected to equilibration at temperatures ranging from 400 to 655 C in various Hg atmospheres. The variation of the hole concentration in the cooled crystals at 77 K as a function of Hg's partial pressure at the equilibration temperature, together with a comparison of the hole mobility in the undoped samples with that in copper-doped ones, yields a defect model for the undoped crystals according to which they are intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. In the second part of this paper, the effects of indium doping are considered. The concentration of electrons obtained in the cooled crystals was found to be lower than the intrinsic carrier concentration at the equilibration temperatures. A defect model is proposed according to which most of the indium is incorporated as In2Te3(s) dissolved in the crystal, with only a small fraction of indium acting as single donors occupying Hg lattice sites.

Vydyanath, H. R.↗
NASA NTRS2020

Creepy (not KREEPy) Gold-Indium Intermetallic Compounds on Secondary Ion Mass Spectrometry Samples

A series of Secondary Ion Mass Spectrometry (SIMS) sessions to measure hydrogen (H) in Martian meteorite minerals was completed using the Cameca 6f SIMS and NanoSIMS 50L at Arizona State University (ASU). During these sessions, a “creeping” phenomenon has occurred, where the edges of samples pressed in indium are covered by a metal alloy. We summarize these observations herein, present a collection of preliminary data, and discuss explanations and concerns for future SIMS work. We conclude the report with a research plan for further study.

Dudley, J. M.↗
NASA NTRS1990

Directional solidification of a planar interface in the presence of a time-dependent electric current

Directional solidification of pure materials and binary alloys with a planar crystal-metal interface in the presence of a time-dependent electric current is considered. For a variety of time-dependent currents, the temperature fields and the interface velocity as functions of time are presented for indium antimonide and bismuth and for the binary alloys germanium-gallium and tin-bismuth. For the alloys, the solid composition is calculated as a function of position. Quantitative predictions are made of the effect of an electrical pulse on the solute distribution in the solidified material.

Brush, L. N.↗
NASA NTRS1980

Ohmic contact for P type indium phosphide

A body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body.

Hawrylo, Frank Z.↗
NASA NTRS1991

Radiation resistance of thin-film solar cells for space photovoltaic power

Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

Woodyard, James R.↗
NASA NTRS1977

Microgravity studies in the liquid phase immiscible system, aluminum-indium

As part of a study to understand the influence of gravity, cooling rate and composition on the structure of liquid phase immiscible materials, two alloys, Al-40 wt % In and Al-70 wt % In were thermally treated on the SPAR II rocket flight. The treatments involved homogenization at a temperature above the miscibility gap and then rapid cooling through the miscibility gap followed by complete solidification. The last two steps were performed while acceleration levels were less than 4 x 10 to the -5th g. The flight alloys produced unexpected results. Instead of fine uniform structures, the alloys consisted of a macroscopically sized aluminum-rich central region surrounded by indium-rich metal.

Gelles, S. H.↗
NASA NTRS1982

Defect chemistry and characterization of Hg sub 1x Cd sub x Te

Single crystal samples of undoped and doped Hg sub 1-x Cd sub x Te were annealed at varying temperatures and partial pressures of Hg. Hall effect and mobility measurements were carried out on these samples after quenching to room temperature. Based on the variation of the carrier concentration and the carrier mobility as a function of the partial pressure of Hg temperature, and dopant concentration, defect models were established for the doped and the undoped crystals. These models indicate that the native acceptor defects in both Hg0.8Cd0.2Te and Hg0.6Cd0.4Te doubly ionized and the native donor defects are negligible in concentration, implying that p to n conversion in these alloys occurs due only to residual donors. Incorporation mechanism of copper, indium, iodine, and phosphorus were investigated. A large concentration of indium is found to be paired with the native acceptor defects. Results on crystals doped with phosphorus indicate that phosphorus behaves amphoterically, acting as a donor on Hg lattice sites and as an acceptor intersitially on Te lattice sites. A majority of the phosphorus is found to be present as neutral species formed from the pairing reaction between phosphorus on Hg lattice sites and phosphorus in interstitial sites. Equilibrium constants for the intrinsic excitation reaction, as well as for the incorporation of the different dopants and the native acceptor defects were established.

Vydyanath, H. R.↗
NASA NTRS1988

A study of surface tension driven segregation in monotectic alloy systems

The compatibilities of various monotectic alloy systems with several different crucible materials were evaluated. The study was carried out using small candidate alloy samples of compositions that produced fifty volume percent of each liquid phase at the monotectic temperature. Compatibility was based on the evaluation of the wetting tendency of the two immiscible phases with the crucible material in a one-g solidified sample. Three types of wetting phenomena were observed during the evaluation. Type 1 indicates an alloy-crucible combination where the L2 phase preferentially wets the crucible material. Since L2 is usually the minority phase in desirable alloys, this material combination would be difficult to process and is therefore considered incompatible. Type 2 behavior indicates an alloy-crucible combination where the L1 phase preferentially wets the crucible material. This type of combination is considered compatible since surface tension effects should aid in processing the alloy to a useful form. Type 3 indicates any combination that leads to major reactions between the alloy and crucible material, gas entrapment, or separation of the metal from the crucible wall. Additional compatibility evaluations would have to be carried out on combinations of this category. The five alloy systems studied included aluminum-bismuth, copper-lead, aluminum-indium, aluminum-lead and cadmium-gallium. The systems were combined with crucibles of alumina, boron nitride, mullite, quartz, silicon carbide and zirconia.

Andrews, J. Barry↗
NASA NTRS1996

High pressure mechanical seal

A relatively impervious mechanical seal is formed between the outer surface of a tube and the inside surface of a mechanical fitting of a high pressure fluid or hydraulic system by applying a very thin soft metal layer onto the outer surface of the hard metal tube and/or inner surface of the hard metal fitting. The thickness of such thin metal layer is independent of the size of the tube and/or fittings. Many metals and alloys of those metals exhibit the requisite softness, including silver, gold, tin, platinum, indium, rhodium and cadmium. Suitably, the coating is about 0.0025 millimeters (0.10 mils) in thickness. After compression, the tube and fitting combination exhibits very low leak rates on the order or 10.sup.-8 cubic centimeters per second or less as measured using the Helium leak test.

Babel, Henry W.↗
NASA NTRS1995

High pressure mechanical seal

A relatively impervious mechanical seal is formed between the outer surface of a tube and the inside surface of a mechanical fitting of a high pressure fluid or hydraulic system by applying a very thin soft metal layer onto the outer surface of the hard metal tube and/or inner surface of the hard metal fitting, prior to swaging the fitting onto the tube. The thickness of such thin metal layer is independent of the size of the tube and/or fittings. Many metals and alloys of those metals exhibit the requisite softness, including silver, gold, nickel, tin, platinum, indium, rhodium and cadmium. Suitably, the coating is about 0.0025 millimeters (0.10 mils) in thickness. After swaging, the tube and fitting combination exhibits very low leak rates on the order or 10.sup.-8 cubic centimeters per second or less as meaured using the Helium leak test.

Babel, Henry W.↗
NASA NTRS1980

Ohmic contact to p-type indium phosphide

Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.

Hawrylo, F. Z.↗
NASA NTRS2012

GaN-Based Detector Enabling Technology for Next Generation Ultraviolet Planetary Missions

The ternary alloy AlN-GaN-InN system provides several distinct advantages for the development of UV detectors for future planetary missions. First, (InN), (GaN) and (AlN) have direct bandgaps 0.8, 3.4 and 6.2 eV, respectively, with corresponding wavelength cutoffs of 1550 nm, 365 nm and 200 nm. Since they are miscible with each other, these nitrides form complete series of indium gallium nitride (In(sub l-x)Ga(sub x)N) and aluminum gallium nitride (Al(sub l-x)Ga(sub x)N) alloys thus allowing the development of detectors with a wavelength cut-off anywhere in this range. For the 2S0-365 nm spectral wavelength range AlGaN detectors can be designed to give a 1000x solar radiation rejection at cut-off wavelength of 325 nm, than can be achieved with Si based detectors. For tailored wavelength cut-offs in the 365-4S0 nm range, InGaN based detectors can be fabricated, which still give 20-40x better solar radiation rejection than Si based detectors. This reduced need for blocking filters greatly increases the Detective Quantum efficiency (DQE) and simplifies the instrument's optical systems. Second, the wide direct bandgap reduces the thermally generated dark current to levels allowing many observations to be performed at room temperature. Third, compared to narrow bandgap materials, wide bandgap semiconductors are significantly more radiation tolerant. Finally, with the use of an (AI, In)GaN array, the overall system cost is reduced by eliminating stringent Si CCD cooling systems. Compared to silicon, GaN based detectors have superior QE based on a direct bandgap and longer absorption lengths in the UV.

Aslam, S.↗