Search NASA⌕ Search

SEARCH · Search NASA

Results for “Implantation detector”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Toward the Discovery of New Elements: Production of Livermorium (𝑍 = 116) with 50 Ti

The 244 Pu ⁢(50 Ti ,𝑥⁢𝑛)⁢ 294−𝑥 Lv reaction was investigated at Lawrence Berkeley National Laboratory’s 88-Inch Cyclotron. The experiment was aimed at the production of a superheavy element with 𝑍 ≥114 by irradiating an actinide target with a beam heavier than 48 Ca. Produced Lv ions were separated from the unwanted beam and nuclear reaction products using the Berkeley Gas-filled Separator and implanted into a newly commissioned focal-plane detector system. Two decay chains were observed and assigned to the decay of 290 Lv . The production cross section was measured to be 𝜎 prod = 0.44($^{+0.58}_{−0.28}$) pb at a center-of-target center-of-mass energy of 220(3) MeV. Furthermore, this represents the first published measurement of the production of a superheavy element near the “island of stability,” with a beam of 50 Ti and is an essential precursor in the pursuit of searching for new elements beyond 𝑍 =118.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Exploration of methods to remove implanted 210 Pb and 210 Po contamination from silicon surfaces

Radioactive contaminants on the surfaces of detector components can be a problematic source of background events for physics experiments searching for rare processes. Exposure to radon is a specific concern because it can result in the relatively long-lived 210 Pb (and progeny) being implanted to significant subsurface depths such that removal is challenging. Here, in this article, we present results from a broad exploration of cleaning treatments to remove implanted 210 Pb and 210 Po contamination from silicon, which is a material frequently used in rare-events searches. We demonstrate for the first time that heat treatments (“baking”) can effectively mitigate such surface contamination, with a 1200 °C bake resulting in a 97$^{+2}_{-3}$% reduction. We also report results using wet-chemistry and plasma-based methods, which show that etching can be highly effective provided the etch depth is sufficiently aggressive. Our survey of cleaning methods suggests consideration of multiple approaches during the different phases of detector construction to enable greater flexibility for efficient removal of 210 Pb and 210 Po surface contamination.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Toward ultrafast, ultra-stable imaging arrays: Superlattice doping to enhance the performance of backside-illuminated 3D-hybridized silicon photodetectors

In this paper, the authors report the latest results on their development of superlattice-doped, thinned, backside-illuminated (BSI), 3D-integrated photodiode detectors—a step toward their ultimate goal of demonstrating ultrafast, ultrastable CMOS imaging arrays. As with most silicon-based photodetectors, backside-illumination and backside surface passivation are keys to achieve the highest performance capability. The two-dimensional (2D) doping technique developed at the Jet Propulsion Laboratory (JPL) has proved to result in a highly efficient, highly stable detector response when combined with a variety of detectors. Here, JPL's 2D-doping has been combined with Sandia's BSI photodetectors hybridized with custom fanout wafer via copper Direct Bond Interconnect (DBI®), a technology that is rapidly becoming industry standard for BSI CMOS imaging arrays. The prototype detectors were packaged and evaluated with respect to their response to low energy electrons. The authors find that the responsivity of 2D-doped BSI detectors is higher than devices prepared using other surface passivation techniques (i.e., ion implantation). The success of the work described herein verifies that the 2D-doping processes previously developed for Sandia's frontside-illuminated photodetectors are generally applicable to BSI detectors and demonstrates for the first time that JPL's 2D-doping process is compatible with the Cu-DBI® technology.

Jewell, April D.↗
DOE OSTI2024

Spontaneous fission of the odd- Z isotope 255 Db

Experiments conducted at Lawrence Berkeley National Laboratory's 88-Inch Cyclotron Facility aimed to produce and study the decay of the previously unobserved isotope 255 Db. This isotope was produced in the 206 Pb( 51 V, 2⁢n) 255 Db reaction, separated from unreacted beam material and reaction by-products with the Berkeley Gas-filled Separator, and then implanted into a double-sided silicon-strip detector at the BGS focal plane. Decay properties of 255 Db were determined from the analysis of evaporation residue (EVR) fission and EVR-α–α correlations. The properties of this new isotope of dubnium differ dramatically from those of its neighboring Db isotopes. 255 Db was found to decay primarily by spontaneous fission (SF) with a small α-decay branch, where the average half-life of the observed decays was t 1/2 = 2.6$^{+0.4}_{– 0.3}$ ms. Theoretical calculations were performed using the Wentzel-Kramers-Brillouin approximation, with parameters calculated within a self-consistent microscopic approach, to see if these unique properties could be reproduced. A SF half-life estimate is obtained that closely matches the measured value, while simultaneously pointing out the sensitivities that need to be further constrained in future work.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1987

Silicon radiation detectors with oxide charge state compensation

This paper discusses the use of boron implantation on high resistivity P type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P type silicon produces an inversion layer which causes high leakage currents on N(+)P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N(+)P junctions with very low leakage currents and with low surface conductance.

Walton, J. T.↗
NASA NTRS1979

Monolithic InSb imaging arrays with charge-coupled device /CCD/ readout

The paper demonstrates the detection of infrared radiation and signal readout on a monolithic InSb charge coupled infrared imaging device. The device is a 20-element linear imager with MOS detectors coupled to a four-phase, surface-channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for zero input and charge readout. Sensitivity measurements on the MOS infrared detectors were determined for the 20-element array. Data are presented on the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both multiplexed and a time delay and integration (TDI) mode. Plans are discussed for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager.

Miller, W. E.↗
DOE OSTI2021

Combined analysis of HPK 3.1 LGADs using a proton beam, beta source, and probe station towards establishing high volume quality control

The upgrades of the CMS and ATLAS experiments for the high luminosity phase of the Large Hadron Collider will employ precision timing detectors based on Low Gain Avalanche Detectors (LGADs). We present a suite of results combining measurements from the Fermilab Test Beam Facility, a beta source telescope, and a probe station, allowing full characterization of the HPK type 3.1 production of LGAD prototypes developed for these detectors. We demonstrate that the LGAD response to high energy test beam particles is accurately reproduced with a beta source. Finally, we further establish that probe station measurements of the gain implant accurately predict the particle response and operating parameters of each sensor, and conclude that the uniformity of the gain implant in this production is sufficient to produce full-sized sensors for the ATLAS and CMS timing detectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1999

Design and Performance of the Astro-E/XRS Microcalorimeter Array and Anti-Coincidence Detector

The XRS instrument has an array of 32 micro-calorimeters at the focal plane. These calorimeters consist of ion-implanted silicon thermistors and HgTe thermalizing x-ray absorbers. These devices have demonstrated a resolution of 9 eV at 3 keV and 11 eV at 6 keV. We will discuss the basic physical parameters of this array, including the array layout, thermal conductance of the link to the heat sink, operating temperature, thermistor size, absorber choice, and means of attaching the absorber to the thermistor bearing element. We will present representative performance data, though a more detailed presentation of the results of the instrument calibration is presented elsewhere in these proceedings. A silicon ionization detector is located behind the calorimeter array and serves to reject events due to cosmic rays. We will briefly describe this anti-coincidence detector and its performance in conjunction with the array.

Stahle, C. K.↗
NASA NTRS1983

Performance of Ge:Ga far infrared detectors

A systematic study was carried out of the properties of Ge:Ga photoconductive infrared detectors for wavelengths approx. 100 micron. The detectors studied were made from Ge:Ga with acceptor concentration N sub A approx. 2 x 10 exp 14/cu cm with both low compensation (10 exp -2) and ultralow compensation (10 exp -4). Noise measurements have been made as a function of background photon rate, bias voltage, and chopping frequency. Detective quantum efficiencies approaching unity have been observed over a side range of experimental parameters. Photocurrent has been measured as a function of voltage and temperature. Hall mobility and lifetime have been measured to determine their effect on detector properties. A small potential drop has been observed in nominally ohmic contacts produced by implantation of B ions.

Hueschen, M. R.↗
NASA NTRS1987

Ultraviolet and extreme ultraviolet response of charge-coupled-device detectors

Results of a program to enhance the ultraviolet and extreme ultraviolet response of charge-coupled devices are presented. The ultimate goal of the program is to develop a large format device with both high and stable quantum efficiency from 100 to 3000 A that can be used as a windowless imaging detector in a space environment. Ultraviolet quantum efficiency measurements have been made for several ion-implanted and laser-annealed test CCDs. Quantum efficiencies as high as 22 percent at 2500 A, where the absorption depth in silicon is about 55 A, have been observed in one such test CCD. Quantum efficiency measurements of standard back-illuminated CCDs are also presented.

Stern, R. A.↗
NASA NTRS2004

A Two-Dimensional, Semiconducting Bolometer Array for HAWC

The Stratospheric Observatory For Infrared Astronomy's (SOFIA's) High resolution Airborne Wideband Camera (HAWC) will use an ion-implanted silicon bolometer array developed at NASA s Goddard Space Flight Center (GSFC). The GSFC Pop-Up Detectors (PUDs) use a unique folding technique to enable a 12 x 32 element closepacked array of bolometers with a filling factor greater than 95%. The HAWC detector uses a resistive metal film on silicon to provide frequency independent, approx. 50% absorption over the 40 - 300 micron band. The silicon bolometers are manufactured in 32-element rows within silicon frames using Micro Electro Mechanical Systems (MEMS) silicon etching techniques. The frames are then cut, "folded", and glued onto a metallized, ceramic, thermal bus "bar". Optical alignment using micrometer jigs ensures their uniformity and correct placement. The rows are then stacked side-by-side to create the final 12 x 32 element array. A kinematic Kevlar suspension system isolates the 200 mK bolometer cold stage from the rest of the 4K detector housing. GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The Junction Field Effect Transistor (JFET) preamplifiers for all the signal channels operate at 120 K, yet they are electrically connected and located in close proximity to the bolometers. The JFET module design provides sufficient thermal isolation and heat sinking for these, so that their heat is not detected by the bolometers. Preliminary engineering results from the flight detector dark test run are expected to be available in July 2004. This paper describes the array assembly and mechanical and thermal design of the HAWC detector and the JFET module.

Voellmer, George M.↗
NASA NTRS1993

Spectroscopic wear detector

The elemental composition of a material exposed to hot gases and subjected to wear is determined. Atoms of an elemental species not appearing in this material are implanted in a surface at a depth based on the maximum allowable wear. The exhaust gases are spectroscopically monitored to determine the exposure of these atoms when the maximum allowable wear is reached.

Madzsar, George C.↗
NASA NTRS1982

Bolometer and photosensitive detector systems for IR

In order to achieve the full sensitivity required for future space astronomy applications, IR detector systems will have to be cooled to 0.1 K or less. The feasibility of such cryocooling has been demonstrated for the established laboratory technique of adiabatic demagnetization, and it has been shown that bolometers made from compensated silicon, with ion-implanted contacts, come close to calculated ultimate performance limits. Unlike bolometers, silicon and germanium photoconductors are highly wavelength-dependent. Useful wavelengths are presented for the most promising photodetectors based on these materials. It is noted that, as the relevant microelectronic technology advances, array detectors in the near-IR may be expected to approach the size and performance of large, intrinsic silicon CCD arrays now available for optical wavelengths.

Low, F. J.↗
NASA NTRS1984

Monolithic silicon bolometers

A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.

Downey, P. M.↗
NASA NTRS1983

Monolithic lead salt-silicon focal plane development

This paper is a summary of work done in the development of monolithic lead salt-silicon infrared focal plane technology. The photoconductive detector materials, PbS and PbSe are chemically deposited onto premetallized silicon MOSFET integrated circuit wafers. A variety of structures based on an implanted PMOS process were fabricated and evaluated. Operational results of an eight-element PbS array multiplexed on-chip are presented along with radiometric measurements on other integrated PbS-silicon MOSFET structures. PbS imagery is shown using one element of a 20-element array integrated on-chip.

Barrett, J. R.↗
NASA NTRS2016

Multimode Bolometer Development for the PIXIE Instrument

The Primordial Inflation Explorer (PIXIE) is an Explorer-class mission concept designed to measure the polarization and absolute intensity of the cosmic microwave background. In the following, we report on the design, fabrication, and performance of the multimode polarization-sensitive bolometers for PIXIE, which are based on silicon thermistors. In particular we focus on several recent advances in the detector design, including the implementation of a scheme to greatly raise the frequencies of the internal vibrational modes of the large-area, low-mass optical absorber structure consisting of a grid of micromachined, ion-implanted silicon wires. With approximately 30 times the absorbing area of the spider-web bolometers used by Planck, the tensioning scheme enables the PIXIE bolometers to be robust in the vibrational and acoustic environment at launch of the space mission. More generally, it could be used to reduce microphonic sensitivity in other types of low temperature detectors. We also report on the performance of the PIXIE bolometers in a dark cryogenic environment.

PIXIE↗
NASA NTRS2016

Multimode Bolometer Development for the Primordial Inflation Explorer (PIXIE) Instrument

The Primordial Inflation Explorer (PIXIE) is an Explorer-class mission concept designed to measure the polarization and absolute intensity of the cosmic microwave background [1]. In this work, we report on the design, fabrication, and performance of the multimode polarization-sensitive bolometers for PIXIE, which are based on silicon thermistors. In particular we focus on several recent advances in the detector design, including the implementation of a tensioning scheme to greatly raise the frequencies of the internal vibrational modes of the large-area, low-mass optical absorber structure consisting of a grid of micromachined, ion-implanted silicon wires. With 30 times the absorbing area of the spider-web bolometers used by Planck, the tensioning scheme enables the PIXIE bolometers to be robust in the vibrational and acoustic environment at launch of the space mission. More generally, it could be used to reduce microphonic sensitivity in other types of low temperature detectors. We also report on the performance of the PIXIE bolometers in a dark cryogenic environment.

PIXIE↗
NASA NTRS1974

Measurements of lunar atmospheric loss rate

Ions from the lunar atmosphere are observed near the lunar terminators by the Apollo Suprathermal Ion Detector Experiments. These ions are accelerated toward the lunar surface by the interplanetary electric field and the lunar surface electric field. The ion implantation rates for these mechanisms are of the order of 7 and 0.4 g/sec, respectively. The removal rate into space by the interplanetary electric field is also approximately 7 g/sec. This measurement is used as a constraint to evaluate possible sources of the lunar atmosphere. Upper limits to the size of the lunar atmosphere in the past are established by computing the loss rate of denser lunar atmospheres.

Vondrak, R. R.↗