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Results for “Interface Reconstruction”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Approximate static condensation algorithm for solving multi-material diffusion problems on meshes non-aligned with material interfaces

In this study, we describe a new algorithm for solving multi-material diffusion problem when material interfaces are not aligned with the mesh. In this case interface reconstruction methods are used to construct approximate representation of interfaces between materials. They produce so-called multi-material cells, in which materials are represented by material polygons that contain only one material. The reconstructed interface is not continuous between cells. Finally, we suggest the new method for solving multi-material diffusion problems on such meshes and compare its performance with known homogenization methods.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. By convolving data from scanning tunneling microscopy and high-angle annular dark field scanning transmission electron microscopy, we reconstruct 3D interfacial atomic structure and employ an atomistic multi-valley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of ~50% owing to alloy disorder and (2) roughness-induced double-dot detuning bias energy variability of order 1–10 meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder. Our approach yields atomic structure spanning orders of magnitude larger areas than post-growth microscopy or tomography alone, enabling more holistic predictions of disorder-induced qubit variability.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Interface- and discontinuity-aware numerical schemes for plasma 3-T radiation diffusion in two and three dimensions

A set of numerical schemes is developed for two- and three-dimensional time-dependent 3-T radiation diffusion equations in systems involving multi-materials. To resolve sub-cell structure, interface reconstruction is implemented within any cell that has more than one material. Therefore, the system of 3-T radiation diffusion equations is solved on two- and three-dimensional polyhedral meshes. The focus of the development is on the fully coupling between radiation and material, the treatment of nonlinearity in the equations, i.e., in the diffusion terms and source terms, treatment of the discontinuity across cell interfaces in material properties, the formulations for both transient and steady states, the property for large time steps, and second order accuracy in both space and time. The discontinuity of material properties between different materials is correctly treated based on the governing physics principle for general polyhedral meshes and full nonlinearity. The treatment is exact for arbitrarily strong discontinuity. The scheme is fully nonlinear for the full nonlinearity in the 3-T diffusion equations. Three temperatures are fully coupled and are updated simultaneously. The scheme is general in two and three dimensions on general polyhedral meshes. The features of the scheme are demonstrated through numerical examples for transient problems and steady states. The effects of some simplifications of numerical schemes are also shown through numerical examples, such as linearization, simple average of diffusion coefficient, and approximate treatment for the coupling between radiation and material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Portable Data-Parallel Surface Reconstruction on a Uniform Rectilinear Grid

With the increasing heterogeneity and on-node parallelism of high-performance computing hardware, a major challenge is to develop portable and efficient algorithms and software. In this work, we present our implementation of a portable code to perform surface reconstruction using NVIDIA's Thrust library. Surface reconstruction is a technique commonly used in volume tracking methods for simulations of multimaterial flow with interfaces. Here, we have designed a 3D mesh data structure that is easily mapped to the 1D vectors used by Thrust and at the same time is simple to use and uses familiar data structure terminology (such as cells, faces, vertices, and edges). With this new data structure in place, we have implemented a piecewise linear interface reconstruction algorithm in 3 dimensions that effectively exploits the symmetry present in a uniform rectilinear computational cell. Finally, we report performance results, which show that a single implementation of these algorithms can be compiled to multiple backends (specifically, multi-core CPUs, NVIDIA GPUs, and Intel Xeon Phi processors), making efficient use of the available parallelism on each. We also compare performance of our implementation to a legacy FORTRAN implementation in Message Passing Interface (MPI) and show performance parity on single and multi-core CPU and achieved good parallel speed-ups on GPU. In conclusion, our research demonstrates the advantage of performance portability of the underlying data-parallel programming model.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Revisiting W–ZrC interfaces: A first principles study

We investigate W–ZrC interfaces using first-principles calculations based on the density functional theory. There have been theoretical and experimental studies exploring W–ZrC interfaces, however, the debate regarding the most stable interface continues to persist. In this study, we systematically simulated various W–ZrC interfaces merging W and ZrC surfaces with different orientations. Subsequently, we evaluated their stabilities and explained the corresponding stabilities in terms of the nature of bonding and charge-transfer processes at the interface. We find ZrC(111)–W(110) is the most stable interface with higher adhesive energy than the other interfaces. The additional stability associated with the ZrC(111)–W(110) results from significant interface reconstruction. Three layers of W and ZrC adjacent to the interface are involved in the charge-transfer process leading to stronger ionic bonds in ZrC(111)–W(110) as compared to the other potential candidate: ZrC(100)–W(100). The C and W atoms are found to be displaced from their symmetric position during the reconstruction process at the interface to facilitate stronger bonds with shorter W–C and W–Zr bonds in ZrC(111)–W(110) as compared to ZrC(100)–W(100). This leads to stronger covalent bonds in ZrC(111)–W(110) than that in ZrC(100)–W(100). Therefore, we conclude that the stronger covalent and ionic forces in ZrC(111)–W(110) than those in ZrC(100)–W(100) are responsible for making ZrC(111)–W(110) to be the most stable interface. In conclusion, this study addresses the long-standing question of the most stable W–ZrC interface and derives a number of implications for other W-transition metal carbide interfaces which are potential candidates for improving the mechanical properties of plasma facing materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Recent numerical and algorithmic advances within the volume tracking framework for modeling interfacial flows

A review of recent advances made in numerical methods and algorithms within the volume tracking framework is presented. The volume tracking method, also known as the volume-of-fluid method has become an established numerical approach to model and simulate interfacial flows. Its advantage is its strict mass conservation. However, because the interface is not explicitly tracked but captured via the material volume fraction on a fixed mesh, accurate estimation of the interface position, its geometric properties and modeling of interfacial physics in the volume tracking framework remain difficult. Several improvements have been made over the last decade to address these challenges. In this study, the multimaterial interface reconstruction method via power diagram, curvature estimation via heights and mean values and the balanced-force algorithm for surface tension are highlighted.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

Surface tension models for a multi-material ALE code with AMR

A number of surface tension models have been implemented in a 3D multi-physics multi-material code, ALE–AMR, which combines Arbitrary Lagrangian Eulerian (ALE) hydrodynamics with Adaptive Mesh Refinement (AMR). ALE–AMR is unique in its ability to model hot radiating plasmas, cold fragmenting solids, and most recently, the deformation of molten material. The surface tension models implemented include a diffuse interface approach with special numerical techniques to remove parasitic flow and a height function approach in conjunction with a volume-fraction interface reconstruction package. These surface tension models are benchmarked with a variety of test problems. In conclusion, based on the results, the height function approach using volume fractions was chosen to simulate droplet dynamics associated with extreme ultraviolet (EUV) lithography.

42 ENGINEERING↗
DOE OSTI2018

An Unconditionally Monotone C 2 Quartic Spline Method with Nonoscillation Derivatives

Here, a one-dimensional monotone interpolation method based on interface reconstruction with partial volumes in the slope-space utilizing the Hermite cubic-spline, is proposed. The new method is only quartic, however is C 2 and unconditionally monotone. A set of control points is employed to constrain the curvature of the interpolation function and to eliminate possible nonphysical oscillations in the slope space. An extension of this method in two-dimensions is also discussed.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2014

Structure, defects, and strain in silicon-silicon oxide interfaces

The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Modeling the interface of platinum and α-quartz(001): Implications for sintering

We present a first-principles study which aims to understand the metal–support interaction of platinum nanoparticles on α-quartz(001) and, more generally, silica. The thermodynamic stability of the α-quartz(001) surface and its interface with Pt(111) are investigated as a function of temperature and partial pressure of H 2 O and O 2 . Potential defects in the α-quartz(001) surface as well as the adsorption energies of the Pt atom are also studied. This allows us to draw conclusions concerning nanoparticle shape and the resistance toward particle migration based on the interface free energies. We find that, as for the clean α-quartz(001) surface, a dry, reconstructed interface is expected at temperatures that are high but within experimentally relevant ranges. On an ideal, dry, reconstructed surface, particle migration is predicted to be a fast sintering mechanism. On real surfaces, defects may locally prevent reconstruction and act as anchoring points. Finally, the energetics of the adsorption of platinum atoms on α-quartz(001) do not support surface-mediated single-atom migration as a viable path for sintering on the investigated surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Phosphorus diffusion and deactivation during SiGe oxidation

Dopant profiles near the semiconductor–oxide interface are critical for microelectronic device performance. As the incorporation of Si 1−x Ge x into transistors continues to increase, it is necessary to understand the behavior of dopants in Si 1−x Ge x . In this paper, the diffusion and electrical activation of phosphorus within a strained, single-crystal Si 0.7 Ge 0.3 layer on Si during oxidation are reported. Both layers were uniformly doped, in situ, with an average phosphorus concentration of 4 × 10 19 atoms/cm 3 . After high-temperature oxidation, secondary ion mass spectrometry measurements revealed that the bulk of the phosphorus diffuses out of only the SiGe layer and segregates at the oxidizing SiGe–SiO 2 interface. Hall effect measurements corroborate the observed phosphorus loss and show that the phosphorus diffusing to the oxidizing interface is electrically inactive. Through density functional theory (DFT) calculations, it is shown that phosphorus interstitials prefer sites near the SiGe–SiO 2 interface. Finally, based on a combination of experimental data and DFT calculations, we propose that the phosphorus atoms are displaced from their lattice sites by Ge interstitials that are generated during SiGe oxidation. The phosphorus atoms then migrate toward the SiGe–SiO 2 interface through a novel mechanism of hopping between Ge sites as P–Ge split interstitials. Once they reach the interface, they are electrically inactive, potentially in the form of interstitial clusters or as part of the reconstructed interface or oxide.

Thornton, Chappel S.↗
DOE OSTI2019

Enhanced interfacial ferromagnetism and exchange bias in (111)-oriented LaNiO 3 / CaMnO 3 superlattices

Emergent properties of complex oxide interfaces are based on interface reconstruction that is driven by mismatch of electronic bands, valence states, interaction lengths, and even crystal symmetry of the interface. In particular, emergent ferromagnetism at the interface of two materials that do not exhibit ferro- or ferrimagnetism in the bulk has been stabilized as a result of competing exchange interactions. When LaNiO 3 and CaMnO 3 , which are a paramagnetic metal and antiferromagnetic insulator in the bulk, respectively, are brought together, ferromagnetism emerges at the interface. Here we show that in (111)-oriented LaNiO 3 / CaMnO 3 (LNO/CMO) superlattices, Ni 2+ -Mn 4+ superexchange interactions due to polar mismatch at the LNO/CMO interfaces are responsible for the emergent ferromagnetism. Compared to (001)-oriented LNO/CMO superlattices, (111)-oriented LNO/CMO superlattices exhibit enhanced interfacial ferromagnetism with a T C > 200 K, greater than the bulk antiferromagnetic transition temperature of CaMnO 3 and a saturated magnetic moment enhanced by up to a factor of 3. Furthermore, we observe exchange bias in (111)-oriented superlattices. The strong exchange interactions along the (111) interface, manifest in the enhanced T c and exchange bias, make this class of CMO-based materials with (111)-oriented interfaces good candidates for low-dimensional spin-polarized materials in spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Interface-aware Methods for Diffusion Equations [Slides]

In this talk, we will present interface-aware methods for diffusion equation. The focus is on the necessity of interface-aware, mixed cells, interface reconstruction, discontinuity of material diffusion coefficients, order of accuracy in time, property for large time steps, and simpler interface-aware methods. Numerical examples are provided to demonstrate the features on these aspects of the methods

97 MATHEMATICS AND COMPUTING↗