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NASA NTRS2017

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Brown, Ari D.↗

NASA NTRS2002

Conversion coatings prepared or treated with calcium hydroxide solutions

A conversion coating process that forms a stable and corrosion-resistant oxide layer on metal or metal oxide substrates or layers. Particularly, the conversion coating process involves contacting the metal or metal oxide substrate or layer with the aqueous calcium hydroxide solutions in order to convert the surface of the substrate to a stable metal oxide layer or coating. According to the present invention, the calcium hydroxide solution is prepared by removing carbon dioxide from water or an aqueous solution before introducing the calcium hydroxide. In this manner, formation of calcium carbonate particles is avoided and the porosity of the conversion coating produced by the calcium hydroxide solution is reduced to below about 1%.

Minevski, Zoran↗

NASA NTRS1978

Effects of compositional changes on the performance of a thermal barrier coating system

Currently proposed thermal barrier systems for aircraft gas turbine engines consist of NiCrAlY bond coating covered with an insulating oxide layer of yttria-stabilized zirconia. The effect of yttrium concentration (from 0.15 to 1.08 w/o) in the bond coating and the yttria concentration (4 to 24.4 w/o) in the oxide layer were evaluated. Furnace, natural gas-oxygen torch, and Mach 1.0 burner rig cyclic tests on solid specimens and air-cooled blades were used to identify trends in coating behavior. Results indicate that the combinations of yttrium levels between 0.15 - 0.35 w/o in the bond coating and the yttria concentration between 6 - 8 w/o in the zirconium oxide layer were the most adherent and resistant to high temperature cyclic exposure.

Stecura, S.↗

NASA NTRSDate not supplied

Modeling the Uptake of Hydrogen Chloride onto Interior Spacecraft Materials

Hydrogen chloride (HCl) is a major combustion product from the pyrolysis of polyvinyl chloride (PVC) insulated electrical wires, a common spacecraft fire safety concern. Models at two different scales were developed to predict HCl uptake on anodized, chromate conversion coated (Iridite), and bare aluminum surfaces, as well as on Nomex fabric: a macroscopic one-step global surface reaction model where all the active sites are on the exterior surface, and a pore model where the interior active sites deeper into the oxide layer can also be accessed by HCl. Experiments were performed to calibrate kinetic and diffusion constants in the models. A cast acrylic test cell was used to measure the differences between the inlet and outlet concentration of HCl after inserting a sample rod of the test material. For the materials with a thin (< 200 µm) or no oxide layer, the macroscopic surface reaction model adequately predicts the experimental measurements. For the anodized aluminum with a thicker oxide layer, the pore model provided a better match to experimental results. The results will be discussed with respect to the spacecraft fire safety project (Saffire).

modeling↗

NASA NTRS2009

SOI CMOS Imager with Suppression of Cross-Talk

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Pain, Bedabrata↗

NASA NTRS1991

Evidence from transmission electron microscopy for an oxynitride layer in oxidized Si3N4

Microstructural and energy dispersive spectrometry evidence is produced, from transmission electron microscopy, to show that a silicon oxynitride inner layer is produced by the oxidation of silicon nitride in dry oxygen at 1350 C as proposed by Tressler et al. (1989). However, details of the microstructures at the oxide/nitride interface do not agree entirely with the rest of the Tressler model for the oxidation of Si3N4.

Ogbuji, Linus U. J. T.↗

NASA NTRS1981

Schottky barrier solar cell

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

Stirn, R. J.↗

NASA NTRS1989

Oxide scale stresses in polycrystalline Ni200

An X-ray diffraction method has been successfully used to measure the oxidation stresses at room temperature in annealed and electropolished samples of polycrystalline Ni200 coupons oxidized in the temperature range 760 to 982 C for 4 h. The stresses on the free surface of the oxide were compressive and the average stress through the thickness normal to the oxide layer was found to be tensile. Surface stresses on the oxides formed at temperatures up to 927 C were found to be isotropic and both surface stresses and the average normal stress increased with increasing temperature of oxidation. At 982 C, the surface stresses were lower and this was attributed to the deformation and fracture of oxide layer resulting in stress relation.

Jayaraman, N.↗

NASA NTRS1991

Microwelding of various metallic materials under ultravacuum (AO 138-10)

The first finding from the AO 138-10 is that cold welding never occurred, and that microwelds didn't even affect the reference (presumably microweld prone) pairs of metals consisting of gold, silver, and chromium. The scientific disappointment from these results must be tempered by the notion of a static AO 138-10 experiment, reflecting the passive character of the global Long Duration Exposure Facility (LDEF) flight. Thus far, it has been theorized that cold welding results from the peeling of the oxide layer, that is formed in an earth environment, by the space environment since such a layer no longer grows in space. In fact, such stripping of the oxide layer supposes relative motion of the contacting materials. In the absence of such motion, as in this experiment, oxidation will preserve its integrity and continue to prevent microwelding. More bewildering is that there was no microwelding of the reference pairs. Even though AO 138-10 failed scientific expectations, as did the LDEF structure with cold welding, the positive, functional aspect to keep in mind is the safe operation of single-shot (appendage releasing and/or latching) mechanisms, unhindered by microwelding in a space vacuum, as now demonstrated by the statically representative pairs of materials. Other aspects of the experiment are discussed.

Assie, Jean Pierre↗

NASA NTRS1992

Thermal degradation study of silicon carbide threads developed for advanced flexible thermal protection systems

Silicon carbide (SiC) fiber is a material that may be used in advanced thermal protection systems (TPS) for future aerospace vehicles. SiC fiber's mechanical properties depend greatly on the presence or absence of sizing and its microstructure. In this research, silicon dioxide is found to be present on the surface of the fiber. Electron Spectroscopy for Chemical Analysis (ESCA) and Scanning Electron Microscopy (SEM) show that a thin oxide layer (SiO2) exists on the as-received fibers, and the oxide thickness increases when the fibers are exposed to high temperature. ESCA also reveals no evidence of Si-C bonding on the fiber surface on both as-received and heat treated fibers. The silicon oxide layer is thought to signal the decomposition of SiC bonds and may be partially responsible for the degradation in the breaking strength observed at temperatures above 400 C. The variation in electrical resistivity of the fibers with increasing temperature indicates a transition to a higher band gap material at 350 to 600 C. This is consistent with a decomposition of SiC involving silicon oxide formation.

Tran, Huy Kim↗

NASA NTRS1982

Method of Fabricating Schottky Barrier solar cell

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Stirn, R. J.↗

NASA NTRS1984

Electron escape depth variation in thin SiO2 films measured with variable photon energy

A double crystal monochromator at the Stanford Synchrotron Radiation Laboratory is used to study the Si/SiO2 interface, using photon energies of hv = 1950-3700 eV. This photon energy range allows interfaces to be observed through oxide layers 50 A thick or more. Variations in electron escape depth and/or oxide density as a function of distance from the interface are observed over the entire kinetic energy range (100-3600 eV). These differences are attributed to a strained oxide layer near the interface.

Hecht, M. H.↗

NASA NTRS1982

Electron loss study of the native oxide of tin

Using electron loss spectroscopy in combination with ion beam depth profiling, it has been established that the oxide of tin formed by electropolishing followed by room temperature aging is metal free and composed of a mixture of SnO2 and SnO. In a fresh oxide layer, the SnO2 is confined to the outer portion of the predominantly SnO oxide. In an aged oxide layer, SnO2 is present up to the oxide/metal interface with an ever decreasing concentration as the interface is approached.

Bevolo, A. J.↗

NASA NTRS1987

Flash technology for charge-coupled-device imaging in the ultraviolet

The introduction of the flash gate has made possible the fabrication of backside-illuminated CCDs with high sensitivity and stability throughout a wide range of ultraviolet and visible wavelengths (100 to 5000 A). It had been determined previously that the characteristics of the oxide layer beneath the gate are critical to the ultimate achievable CCD performance. However, by creating an improved oxide layer in conjunction with the flash gate, it is now possible to consistently produce CCDs with near-ideal UV performance. In this paper recent results and related background theory that optimize the flash gate specifically for application in the UV are presented.

Janesick, James R.↗

NASA NTRS2001

Evaluation of Ti-48Al-2Nb Under Fretting Conditions

An investigation was conducted to examine the fretting behavior of lambda-TiAl (Ti-48Al-2Cr-2Nb) in contact with a nickel-base superalloy (Inconel 718) in air at temperatures from 23 to 550 C. Fretting wear experiments were conducted with 9.4-mm-diameter hemispherical Inconel (IN) 718 pins in contact with Ti-48Al-2Cr-2Nb flats (and the reverse) at loads from 1 to 40 N and fretting frequencies from 50 to 160 Hz with slip amplitudes from 50 to 200 microns for 1 to 20 million fretting cycles. The results were similar for both combinations of pin and flat. Reference fretting wear experiments were also conducted with 9.4-mm-diameter hemispherical Ti-6Al-4V pins in contact with IN718 flats. The interfacial adhesive bonds between Ti-48Al-2Cr-2Nb and IN718 in contact were generally stronger than the cohesive bonds in the cohesively weaker Ti-48Al-2Cr-2Nb. The failed Ti-48Al-2Cr-2Nb subsequently transferred to the IN718 surface at any fretting condition. The wear scars produced on Ti-48Al-2Cr-2Nb contained metallic and oxide wear debris, scratches, plastically deformed asperities, cracks, and fracture pits. Oxide layers readily formed on the Ti-48Al-2Cr-2Nb surface at 550 C, but cracks easily occurred in the oxide layers. Factors including fretting frequency, temperature, slip amplitude, and load influenced the fretting behavior of Ti-48Al-2Cr-2Nb in contact with IN718. The wear volume loss of Ti-48Al-2Cr-2Nb generally decreased with increasing fretting frequency. The increasing rate of oxidation at elevated temperatures up to 200 C led to a drop in wear volume loss at 200 C. However, the fretting wear increased as the temperature was increased from 200 to 550 C. The highest temperatures of 450 and 550 C resulted in oxide film disruption with generation of cracks, loose wear debris, and pits on the Ti-48Al-2Cr-2Nb wear surface. The wear volume loss generally increased as the slip amplitude increased. The wear volume loss also generally increased as the load increased. Increasing slip amplitude and increasing load both tended to produce more metallic wear debris, causing severe abrasive wear in the contacting metals.

Miyoshi, Kazuhisa↗

NASA NTRS2009

Failure Analysis of Main Flame Deflector Nelson Studs

NASA Structures engineers submitted two Nelson refractory studs from the main flame deflector at Launch Complex (LC) 39 A for analysis when they were observed to be missing a significant amount of material after launch. The damaged stud and an unused comparative stud were analyzed by macroscopic and microscopic examination along with metallographic evaluation of the microstructure. The stud lost material due to a combination of erosion and corrosion. Plain carbon steel readily forms an oxide layer in the coastal launch environment at Kennedy Space Center. The blast during a launch removes this brittle oxide layer, which then forms again post-launch, thereby further removing material. No indications of melting were observed.

Long, Victoria↗

NASA NTRS1985

Fluidized reduction of oxides on fine metal powders without sintering

In the process of reducing extremely fine metal particles (av. particle size or = 1000 angstroms) covered with an oxide layer, the metal particles are fluidized by a gas flow contg. H, heated, and reduced. The method uniformly and easily reduces surface oxide layers of the extremely fine metal particles without causing sintering. The metal particles are useful for magnetic recording materials, conductive paste, powder metallurgy materials, chem. reagents, and catalysts.

Hayashi, T.↗

NASA NTRS1992

Oxygen-induced Al surface segregation in Al(x)Ga(1-x)As and the effect of Y overlayers on the oxidation of the Y/Al(x)Ga(1-x)As interface

The oxidation of Al(x)Ga(1-x)As (x = 0.15, AlGaAs) was studied by AES and XPS at 350 C and different oxygen exposures (up to 5 x 10 exp 4 L). Also studied were the effects of yttrium overlayers (theta = 3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and nonyttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the nonyttriated surface. Also, while oxidation of the nonyttriated AlGaAs yielded mainly Al2O(x) (x less than 3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and nonyttriated surfaces were found to contain metallic As within the oxide layer.

Mesarwi, A.↗