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At least 55 records · Page 3

Multilevel metallization method for fabricating a metal oxide semiconductor device

An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.

Hollis, B. R., Jr.↗

Hydrazine reduction of transition metal oxides - In situ characterization using X-ray photoelectron spectroscopy

The transition metal oxides (TMOs) V2O5, FeO3, Co3O4, NiO, CuO, and ZnO were exposed to hydrazine at various pressures. The metallic surfaces were surveyed by in situ X-ray photoelectron spectroscopy to determine the irrelative rate of reduction by hydrazine. The most easily reducible oxide, CuO, could be reduced to the metallic state at room temperature and 10 to the -6th torr. The reaction is first order with respect to CuO, with an activation energy of about 35 kJ/mol. Two types of adsorption were seen to occur at 295 K: (1) a reversible component in which the measured N:Cu ratio increased to 0.60 at hydrazine pressures up to 0.5 torr, and (2) an irreversible component, with a N:Cu ratio of 0.28, which could not be removed by extended vacuum pumping. The results of this study are useful for the identification of TMO's that can be used as solid neatallizers of hydrazine spills, and for the preparation of metal surfaces for electroplating and evaporative thin-film coating.

Littrell, D. M.↗

The Development of Metal Oxide Chemical Sensing Nanostructures

This paper discusses sensor development based on metal oxide nanostructures and microsystems technology. While nanostructures such as nanowires show significant potential as enabling materials for chemical sensors, a number of significant technical challenges remain. This paper discusses development to address each of these technical barriers: 1) Improved contact and integration of the nanostructured materials with microsystems in a sensor structure; 2) Control of nanostructure crystallinity to allow control of the detection mechanism; and 3) Widening the range of gases that can be detected by fabricating multiple nanostructured materials. A sensor structure composed of three nanostructured oxides aligned on a single microsensor has been fabricated and tested. Results of this testing are discussed and future development approaches are suggested. It is concluded that while this work lays the foundation for further development, these are the beginning steps towards realization of repeatable, controlled sensor systems using oxide based nanostructures.

Hunter, G. W.↗

Response of a metal-oxide-semiconductor field-effect transistor to a cosmic-ray ion track

A cosmic-ray ion track passing perpendicularly through the oxide layer of an enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) forms a conducting path, the resistance of which is proportional to the stopping power of the cosmic ion and independent of the cross-sectional area of the ion track. The voltage across the oxide capacitance may drop below the threshold voltage if the gate bias is sufficiently low or if the external resistance in the gate-source circuit is sufficiently high. The first of a pair of MOSFETs forming a flip-flop circuit may thus be turned off, and the second transitor may turn on, providing it has a sufficiently short delay time, thereby completing a single-event upset.

Benumof, Reuben↗

Chemical Sensors Based on Metal Oxide Nanostructures

This paper is an overview of sensor development based on metal oxide nanostructures. While nanostructures such as nanorods show significan t potential as enabling materials for chemical sensors, a number of s ignificant technical challenges remain. The major issues addressed in this work revolve around the ability to make workable sensors. This paper discusses efforts to address three technical barriers related t o the application of nanostructures into sensor systems: 1) Improving contact of the nanostructured materials with electrodes in a microse nsor structure; 2) Controling nanostructure crystallinity to allow co ntrol of the detection mechanism; and 3) Widening the range of gases that can be detected by using different nanostructured materials. It is concluded that while this work demonstrates useful tools for furt her development, these are just the beginning steps towards realizati on of repeatable, controlled sensor systems using oxide based nanostr uctures.

Hunter, Gary W.↗

High-temperature Complementary Metal Oxide Semiconductors (CMOS)

The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.

Mcbrayer, J. D.↗

Portable life support system regenerative carbon dioxide and water vapor removal by metal oxide absorbents preprototype hardware development and testing

NASA-Johnson has acquired a preprototype/full-scale metal oxide CO2 and humidity remover (MOCHR), together with its regeneration module. Tests conducted prior to delivery by the MOCHR's manufacturer have demonstrated the concurrent removal of H2O and CO2 at rates, and under conditions, that are applicable to EVA Portable Life Support Systems.

Hart, Joan M.↗

Nanoscale Metal Oxide Semiconductors for Gas Sensing

A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical resistance of these SnO2 nanomaterials towards reducing gases. With regard to the sensitivity of the different nascent nanostructures, the electrospun nanofibers appear preferable

Hunter, Gary W.↗

Models of second-order effects in metal-oxide-semiconductor field-effect transistors for computer applications

Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed.

Benumof, Reuben↗

Total dose effect on soft error rate for dynamic metal-oxide-semiconductor memory cells

A simple model for the soft error rate for dynamic metal-oxide-semiconductor random access memories due to normal galactic radiation was devised and then used to calculate the rate of decrease of the single-event-upset rate with total radiation dose. The computation shows that the decrease in the soft error rate is less than 10 percent per day if the shielding is 0.5 g/sq cm and the spacecraft is in a geosynchronous orbit. The decrease is considerably less in a polar orbiting device.

Benumof, Reuben↗

Integrated photo-responsive metal oxide semiconductor circuit

An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.

Jhabvala, Murzban D.↗

Study of the use of Metal-Oxide-Silicon (MOS) devices for particulate detection and monitoring in the earth's atmosphere

A metal-oxide-silicon (MOS) capacitor-type particulate sensor was evaluated for use in atmospheric measurements. An accelerator system was designed and tested for the purpose of providing the necessary energy to trigger the MOS-type sensor. The accelerator system and the MOS sensor were characterized as a function of particle size and velocity. Diamond particles were used as particulate sources in laboratory tests. Preliminary tests were performed in which the detector was mounted on an aircraft and flown in the vicinity of coal-fired electric generating plants.

Brooks, A. D.↗

Random and block copolymerization in metal oxide gel synthesis from metalorganic compounds

The introduction and development of the block copolymerization concept in metal oxide gel synthesis will in the future generate a new class of glass/microcrystalline materials. By the year 2004, better scientific understanding of the chemical principles controlling the distribution of network formers or modifiers in silicate gels will permit the synthesis of architecturally well-defined block polymers with unique high-performance behavior.

Mukherjee, S. P.↗

Comparison of metal oxide absorbents for regenerative carbon dioxide and water vapor removal for advanced portable life support systems

Metal-oxide absorbents (MOAs) have a demonstrated capability for removal of both metabolic CO2 and H2O from breathing atmospheres, simplifying portable life support system (PLSS) design and affording reversible operation for regeneration. Attention is presently given to the comparative performance levels obtained by silver-oxide-based and silver/zinc-oxide-based systems, which also proved to be longer-lasting than the silver oxide-absorber system. The silver/zinc system is found to substantially simplify the ventilation loop of a prospective Space Station Freedom PLSS.

Stonesifer, Greg T.↗