NASA NTRS · 19790006735
Multilevel metallization method for fabricating a metal oxide semiconductor device
Abstract
An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.
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Hollis, B. R., Jr., Feltner, W. R., Bouldin, D. L., Routh, D. E.. 1978-09-05. Multilevel metallization method for fabricating a metal oxide semiconductor device. https://ntrs.nasa.gov/citations/19790006735
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