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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Photoconductor-metal contact at higher densities.

The formation of space charge in the barrier region is discussed. This region extends to a distance, x-sub o, equal to 200 A plus twice the mean free path of majority carriers. The conventional transport equation can be used only for x greater than x-sub o, and the carrier density at x-sub o represents a boundary condition for the bulk. Its change as a function of applied voltage, temperature, and light intensity in photoconducting CdS is discussed. The time dependence of the space-charge formation in the region between 0 and x-sub o is analyzed. It is shown under which conditions the individuality of the metal contact is observable.

Dussel, G. A.↗
NASA NTRS1976

Development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

Technology was developed for production of doped-germanium detectors which have optimized performance in the 30- to 120-micrometer wavelength range and are capable of achieving the objectives of the Infrared Astronomy Satellite space mission. The work of this phase was divided into the following major tasks: (1) growth of Ge:Ga crystals from high-purity starting material with Ga concentrations different from that previously produced, and development of a zone leveling method to produce a uniform Ga doping concentration; (2) growth of uncompensated Ge:Be crystals from high-purity starting material with a range of Be concentrations between 10 to the 14th power and 10 to the 16th power atoms/cubic cm; (3) evaluation of crystals by means of Hall effect and resistance measurements as a function of temperature; (4) fabrication and test of detectors made from both Ge:Be and Ge:Ga crystals to determine the relative performance between different crystals. Correlation of detector test data with material evaluation data and analysis of how to further optimize detector performance.

Bratt, P. R.↗
NASA NTRS1978

Continued development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts.

Bratt, P. R.↗
NASA NTRS1979

Gallium-doped germanium, evaluation of photoconductors, part 1

Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.

Moore, W. J.↗
NASA NTRS1986

Dark current measurement in photoconductors

The Space Infrared Telescope Facility (SIRTF) is envisioned as a next generation space observatory for observations between 2 and 700 microns. In order to address many of the important scientific questions in areas such as cosmology, star formation, and galaxy evolution, infrared detectors of unparalleled sensitivity will be required. Dark current measurements are described for a number of different discrete photoconductive detectors that may be of importance at the very low backgrounds expected with SIRTF.

Young, E. T.↗
NASA NTRS1986

Optical efficiency of far-infrared photoconductors

The present optimization of the geometry of far-IR photoconductive detectors with diffraction-limited throughput, on the basis of experimental and theoretical results, gives attention to the internal optical path relative to measured absorption length, photoconductive gain, uniformity of illumination, cosmic ray cross section, and design compatibility with the requirements of one- and two-dimensional arrays. It is demonstrated that a rod-shaped, square cross section detector geometry, having lateral face electrodes and a beveled backface with which to trap the radiation by total internal reflection, exhibits responsivity commensurate with that of the best available detectors in integrating cavities.

Wang, J.-Q.↗
NASA NTRS1988

Uniform Etching For Polycrystalline Photoconductor Films

Prewetting surface overcomes problem of nonuniformity of etching often occuring in polycrystalline films at PbS and PbSe. Believed prewetting causes etchant to attack film uniformly. Because process involves wet chemistry, inexpensive and easy to use.

Barrett, John↗
NASA NTRS1983

Ge:Be far infrared photoconductors

Some conclusions reached are as follow. Ge:Be detectors provide lower Noise Equivalent Power (NEP) and higher responsivities than state of the art Ge:Ga detectors at 42 microns. Reliable Be doping was achieved with Czochralski growth from a carbon susceptor under vacuum. The photoconductive behavior of Ge:Be detectors is strongly influenced by the concentration of residual shallow impurities. Optimization of Ge:Be detectors requires both a low concentration and precise compensation of shallow acceptors.

Haegel, N. M.↗
NASA NTRS1975

A new real-time non-coherent to coherent light image converter - The hybrid field effect liquid crystal light valve

A new, high-performance device has been developed for application to real-time coherent optical data processing. The new device embodies a CdS photoconductor, a CdTe light-absorbing layer, a dielectric mirror, and a liquid crystal layer sandwiched between indium-tin-oxide transparent electrodes deposited on optical quality glass flats. The noncoherent image is directed onto the photoconductor; this reduces the impedance of the photoconductor, thereby switching the ac voltage that is impressed across the electrodes onto the liquid crystal to activate the device. The liquid crystal is operated in a hybrid field effect mode. It utilizes the twisted nematic effect to create a dark off-state and the optical birefringence effect to create the bright on-state. The liquid crystal modulates the polarization of the coherent read-out light so an analyzer must be used to create an intensity modulated output beam.

Grinberg, J.↗
NASA NTRS1988

Development of FIR arrays with integrating amplifiers

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Young, Erick T.↗
NASA NTRS1989

ISO/LWS: Detector status

The aim of the long wavelength spectrometer (LWS) of the Infrared Space Observatory is to perform spectrometry in the wavelength range 45 to 200 microns using two resolution modes. The resolution will be around 200 in the medium resolution mode while it will reach 10(exp 4) in the high resolution mode. The sensitivity of this instrument will be close to 10(exp -18) W/sq. root Hz. A schematic view of the focal plane unit is presented. The detectors divide the wavelength range into ten spectral channels. The spectral range and position of each detector is indicated. Each detector will cover approximately a spectral bandwidth sufficient to allow for a 50 percent redundancy in the case of detector failure. There are three types of detectors. SW1 is a Ge:Be photoconductor covering the 45 to 55 micron region. LW1, SW2, SW3, SW4, SW5 are unstressed Ge:Ga photoconductors which cover the 50 to 120 micron region. LW2, LW3, LW4, LW5 are uniaxially stressed Ge:GA photoconductors covering the range from 100 to 200 microns. The stress applied to each detector will be adjusted in order to get the peak response in the corresponding wavelength range, and to minimize the dark current of the shorter wavelength stressed detectors. Stressed and unstressed detectors are located alternatively in order to receive the first and second order of the diffracted beam.

Lenaour, C.↗
NASA NTRS1977

Reflective liquid crystal light valve with hybrid field effect mode

There is disclosed a high performance reflective mode liquid crystal light valve suitable for general image processing and projection and particularly suited for application to real-time coherent optical data processing. A preferred example of the device uses a CdS photoconductor, a CdTe light absorbing layer, a dielectric mirror, and a liquid crystal layer sandwiched between indium-tin-oxide transparent electrodes deposited on optical quality glass flats. The non-coherent light image is directed onto the photoconductor; this reduces the impedance of the photoconductor, thereby switching the AC voltage that is impressed across the electrodes onto the liquid crystal to activate the device. The liquid crystal is operated in a hybrid field effect mode. It utilizes the twisted nematic effect to create a dark off-state (voltage off the liquid crystal) and the optical birefringence effect to create the bright on-state. The liquid crystal thus modulates the polarization of the coherent read-out or projection light responsively to the non-coherent image. An analyzer is used to create an intensity modulated output beam.

Boswell, Donald D.↗
NASA NTRS1971

G-r noise for Auger band-to-band processes.

Expressions for band-to-band Auger recombination, including the effects of photoinduced carriers in intrinsic photoconductors, are presented. They show good agreement with the expressions published by van Vliet (1958) and Long (1967) for g-r noise in intrinsic photoconductors for the case of band-to-band radiative recombination.

Breitzer, D.↗
NASA NTRS1982

Theory and status of high performance heterodyne detectors

Both near-ideal heterodyne performance and an enhancement of CO2 laser heterodyne system capabilities have been obtained by means of recently developed wide-bandwidth HgCdTe photodiodes and photoconductors. Design considerations, including limitations due to various HgCdTe material parameters, performance predictions, and the current development status of wide bandwidth HgCdTe photodiodes are presented. Attention is also given to the uses and recent results obtained for p-type HgCdTe photoconductors in the role of elevated temperature photomixers.

Spears, D. L.↗
NASA NTRS1983

IR detectors - Heterodyne and direct

Recent developments in the area of wide-bandwidth infrared detectors, both for direct and heterodyne detection, are reviewed with emphasis on the differences and tradeoffs between photodiodes and photoconductors. In the direct-detection mode, where amplifier noise is an important consideration, the state-of-the-art detection noise equivalent power is approximated by 500 (B/10 MHz) pW. At short wavelengths (less than 1.7 micron), avalanche photodiodes offer superior performance, with a detection noise equivalent power of about 50 (B/10 MHz) pW. In heterodyne operation, near-ideal sensitivities of about 0.3 (B/10 MHz) pW have been achieved with 77K photodiodes. At 10 microns, HgCdTe photoconductors offer very good heterodyne performance at elevated temperatures: 2 (B/10 MHz) pW at 195 K and potentially 3 (B/10 MHz) pW at 250 K.

Spears, D. L.↗
NASA NTRS1984

Temperature stability limits for an isothermal demagnetization refrigerator

It is pointed out that magnetic refrigeration can provide additional cooling for infrared detectors on space missions, taking into account the Shuttle Infrared Telescope Facility (SIRTF) and the Large Deployable Reflector (LDR). From a temperature of 2 K provided by the primary cryogens, magnetic refrigerators could cool bolometers or pumped photoconductors to 0.1 K or below. Such a reduction in operating temperature would increase the sensitivity for bolometers, while the response at longer wavelengths for pumped photoconductors would be improved. Two types of magnetic refrigeration cycles have been proposed. One type uses a complete demagnetization. The present investigation is concerned with the second type, which uses a feedback-controlled isothermal demagnetization, taking into account the temperature stability limits. Attention is given to control system resolution, thermometer noise, reaction time, and thermal time constants.

Kittel, P.↗
NASA NTRS1987

Detection of radio-frequency modulated optical signals by two and three terminal microwave devices

An interdigitated photoconductor (two terminal device) on GaAlAs/GaAs heterostructure was fabricated and tested by an electro-optical sampling technique. Further, the photoresponse of GaAlAs/GaAs HEMT (three terminal device) was obtained by illuminating the device with an optical signal modulated up to 8 GHz. Gain-bandwidth product, response time, and noise properties of photoconductor and HEMT devices were obtained. Monolithic integration of these photodetectors with GaAs microwave devices for optically controlled phased array antenna applications is discussed.

Bhasin, K. B.↗