Search NASA⌕ Search

SEARCH · Search NASA

Results for “PROTON IRRADIATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Radiation damage in proton irradiated indium phosphide solar cells

Indium phosphide solar cells exposed to 10 MeV proton irradiations were found to have significantly greater radiation resistance than either GaAs or Si. Performance predictions were obtained for two proton dominated orbits and one in which both protons and electrons were significant cell degradation factors. Array specific power was calculated using lightweight blanket technology, a SEP array structure, and projected cell efficiencies. Results indicate that arrays using fully developed InP cells should out-perform those using GaAs or Si in orbits where radiation is a significant cell degradation factor.

Weinberg, I.↗
NASA NTRS2022

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation

Dark Current degradation and Dark Current Ran- dom Telegraph Signal after proton irradiation are studied in new scale silicon microvolumes by using a commercial CMOS Image Sensor. Results show that previously reported empirical models describing the Displacement Damage induced degradations are still valid despite the 10 to 100 times smaller depletion volume used. In addition, no evidence of significant Total Ionizing Dose effects is observed. Finally the reduction of the fraction of Random Telegraph Signal (RTS) pixels detected and of the fraction of multi-level RTS pixels is directly linked to the reduction in pixel volume.

CMOS Image Sensor (CIS)↗
NASA NTRS1975

A two-parameter scintillation spectrometer system for measurement of secondary proton, deuteron, and triton distributions from materials under 558-MeV-proton irradiation

A two-parameter scintillation spectrometer system developed and used to obtain proton, deuteron, and triton double differential cross sections from materials under 558-MeV-proton irradiation is described. The system measures both the time of flight of secondary particles over a 488-cm flight path and the energy deposited in a scintillator, 12.7 cm in diameter and 30.48 cm long. The time resolution of the system is 0.39 nsec. The calculated energy resolution based on this time resolution varies with energy from 1.6 precent to 7.75 percent for 50- and 558-MeV protons. Various systematic and statistical errors are evaluated, and the double differential cross sections for secondary proton and deutron production at 20 deg from a 2.35 g/sq cm thick beryllium target are shown as an example of the results obtainable with this system. The uncertainly in the cross sections for secondary protons varies with particle energy from approximately + or - 9 percent at 50 MeV to approximately + or - 11 percent at 558 MeV.

Beck, S. M.↗
NASA NTRS2003

Quantification of rat retinal growth and vascular population changes after single and split doses of proton irradiation: translational study using stereology methods

This study quantified architectural and population changes in the rat retinal vasculature after proton irradiation using stereology. A 100 MeV conformal proton beam delivered 8, 14, 20 and 28 Gy as single and split doses to the whole eye. The vascular networks were prepared from retinal digests. Stereological methods were used to obtain the area of the retina and unbiased estimates of microvessel/artery/vein endothelial, pericyte and smooth muscle population, and vessel length. The retinal area increased progressively in the unirradiated, age-matched controls and in the retinas irradiated with 8 and 14 Gy, indicating uniform progressive retinal growth. No growth occurred after 20 and 28 Gy. Regression analysis of total endothelial cell number in all vessels (arteries, veins and capillaries) after irradiation documented a progressive time- and dose-dependent cell loss occurring over 15 to 24 months. The difference from controls was significant (P<0.01) after 28 Gy given in single and split doses and after 20 Gy given as a split dose (P<0.05). Total vessel length in microvessel was significantly shortened at 20 and 28 Gy compared to that of controls (P<0.05). No evident dose recovery was observed in the endothelial populations after split doses. At 10 Gy, the rate of endothelial cell loss, a dose parameter used to characterize the time- and dose-dependent loss of the endothelial population, was doubled.

NASA Discipline Radiation Health↗
NASA NTRS1978

Effects of proton irradiation on a gas phase in which condensation takes place. I Negative Mg-26 anomalies and Al-26

In the present paper, isotopic effects in magnesium generated in a proton-irradiated gas phase are examined, taking only (p,n), (p,d), and (p, alpha) reactions in magnesium, aluminum, and silicon into consideration. In the presence of proton radiation, the three elements are 'removed' from the gas phase by condensation. It is required that a value of Al-26/Al-27 greater than 6 times 10 to the -5th must be reached, consistent with the value deduced by Lee Papanastassiou, and Wasserburg (1976) from their studies of the Allende meteorite. The calculations show that fast aluminum condensation reduces the required proton fluence substantially, that a significant fraction of aluminum remains uncondensed when the above value of the Al-26/Al-27 ratio is reached, that a detectable MG-24 excess is very likely to occur, that detectable negative MG-28 anomalies can be generated, and that proton fluxes and irradiation times can be varied simultaneously, and over a wide range of values, without significant changes in the required proton fluence.

Heymann, D.↗
NASA NTRS1980

Study of radiation induced deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Radiation induced deep-level defects (both electron and hole traps) in proton irradiated AlGaAs-GaAs p-n junction solar cells are investigated along with the correlation between the measured defect parameters and the solar cell performance parameters. The range of proton energies studied was from 50 KeV to 10 MeV and the proton fluence was varied from 10 to the 10th power to 10 to the 13th power P/sq cm. Experimental tools employed include deep-level transient spectroscopy, capacitance-voltage, current voltage, and SEM-EBIC methods. Defect and recombination parameters such as defect density and energy level, capture cross section, carrier lifetimes and effective hole diffusion lengths in n-GaAs LPE layers were determined from these measurements.

Li, S. S.↗
DOE OSTI2025

Anisotropic growth of Ni 2 (Cr,Mo) ordered phase in proton irradiated Ni-Cr-Mo alloys

Ni-Cr-Mo alloys are widely used in the nuclear industry as structural materials due to their high temperature strength and corrosion resistance. Ni-based alloys containing around 33 at.% (Cr+Mo) developed a long-range ordered Ni 2 (Cr,Mo) phase after thermal aging and/or irradiation. The ordering mechanism for thermally-aged Ni 2 (Cr,Mo) phase is well-understood, characterized to be sluggish, homogeneous, and isotropic. The ordering mechanism for irradiation-induced Ni 2 (Cr,Mo) phase is not fully understood, characterized as having rapid formation and demonstrating anisotropic precipitation. Here, this work elucidates the anisotropic precipitation and anisotropic precipitation mechanism of Ni 2 (Cr,Mo) after proton irradiation in Ni-Cr-Mo alloys. Selected area electron diffraction and bright-field scanning transmission electron microscopy imaging are used to image superlattice reflections from the ordered phase and irradiation-induced defects, respectively. A higher degree of anisotropic precipitation is observed with increasing dislocation loop and void size; a phenomenon not observed in thermally aged samples.

36 - MATERIALS SCIENCE↗
NASA NTRS1980

Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cells

Detailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.

Li, S. S.↗
NASA NTRS2002

Effects of proton irradiation on luminescence and carrier dynamics of self-assembled III-V quatum dots

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

nanotechnology DLTS optical properties pn diodes q↗
NASA NTRS1984

Studies of proton-irradiated SO2 at low temperatures Implications for Io

The infrared absorption spectrum from 3.3 to 27 microns of SO2 ice films has been measured at 20 and 88 K before and after 1-MeV proton irradiation. The radiation flux was chosen to simulate the estimated flux of Jovian magnetospheric 1-MeV protons incident on Io. After irradiation, SO3 is identified as the dominant molecule synthesized in the SO2 ice. This is also the case after irradiation of composite samples of SO2 with sulfur or disulfites. Darkening was observed in irradiated SO2 ice and in irradiated S8 pellets. Photometric and spectral measurements of the thermoluminescence of irradiated SO2 have been made during warming. The spectrum appears as a broad band with a maximum at 4450 A. Analysis of the luminescence data suggests that at Ionian temperatures irradiated SO2 ice would not be a dominant contributor to posteclipse brightening phenomena. After warming to room temperature, a form of SO3 remains along with a sulfate and S8. Based on these experiments, it is reasonable to propose that small amounts of SO3 may exist on the surface of Io as a result of irradiation synthesis in SO2 frosts.

Moore, M. H.↗
DOE OSTI2025

Charge Trap Layer Supercharging for Improved Bit Reliability in 3-D NAND Flash Under Proton Irradiation

Single-event upset (SEU) cross sections are reduced in 176-layer charge trap (CT) 3-D nand devices under proton irradiation when multiple write operations are applied sequentially without the typical erase-before-write. Here, this effect is observed for multiple data patterns and in both single-level cell (SLC) and triple-level cell (TLC) operating modes. SEU cross section calculation methodologies are discussed for highly scaled 3-D devices both with and without the application of rewrites, and potential implications for long-term endurance effects are proposed.

Breeding, Matthew Luel [Sandia National Laboratori↗
NASA NTRS1991

Studies of proton irradiated H2O + CO2 and H2O + CO ices and analysis of synthesized molecules

Infrared spectra of H2O + CO2 and H2O + CO ices before and after proton irradiation showed that a major reaction in both mixtures was the interconversion of CO2 yields CO. Radiation synthesized organic compounds such as carbonic acid were identified in the H2O + CO2 ice. Different chemical pathways dominate in the H2O + CO ice in which formaldehyde, methanol, ethanol, and methane were identified. Sublimed material was also analyzed using a mass spectrometer. Implications of these results are discussed in reference to comets.

Moore, M. H.↗
NASA NTRS1985

Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Weinberg, I.↗