DOE OSTI · 2585645
Charge Trap Layer Supercharging for Improved Bit Reliability in 3-D NAND Flash Under Proton Irradiation
Abstract
Single-event upset (SEU) cross sections are reduced in 176-layer charge trap (CT) 3-D nand devices under proton irradiation when multiple write operations are applied sequentially without the typical erase-before-write. Here, this effect is observed for multiple data patterns and in both single-level cell (SLC) and triple-level cell (TLC) operating modes. SEU cross section calculation methodologies are discussed for highly scaled 3-D devices both with and without the application of rewrites, and potential implications for long-term endurance effects are proposed.
Keep this discovery
Explore connections, maps & timelines
Breeding, Matthew Luel [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000196375840), Teijeiro, Antonio Emilio [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Hughart, David Russell [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000325862494), Young, Joshua Michael [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000284990368), Black, Dolores Archuleta [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000252823506), Black, Jeffrey D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000330587992), Wilcox, Edward P. [NASA Goddard Space Flight Center (GSFC), Greenbelt, MD (United States)] (ORCID:0000000179971309). 2025-03-13. Charge Trap Layer Supercharging for Improved Bit Reliability in 3-D NAND Flash Under Proton Irradiation. https://doi.org/10.1109/tns.2025.3549487
Cite the original work for its findings. Save a collection to share your selection of sources.