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The development of photomask reticle calibration standards for single particle instruments is discussed. The calibration method studied involves the use of photomask reticles where the particle artifacts are actually disks of chrome thin film in the clear field reticles produced by photolithography and etching processes. Consideration is given to various aspects of theory, design, and performance.
A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.
There is great interest in the application of thin film high temperature superconductors in high frequency electronic circuits. A ring resonator provides a good test vehicle for assessing the microwave losses in the superconductor and for comparing films made by different techniques. Ring resonators made of YBa2Cu3O(7-x) have been investigated on LaAlO3 substrates. The superconducting thin films were deposited by sequential electron beam evaporation of Cu, Y, and BaF2 with a post anneal. Patterning of the superconducting film was done using negative photolithography. A ring resonator was also fabricated from a thin gold film as a control. Both resonators had a gold ground plane on the backside of the substrate. The ring resonators' reflection coefficients were measured as a function of frequency from 33 to 37 GHz at temperatures ranging from 20 K to 68 K. The resonator exhibited two resonances which were at 34.5 and 35.7 GHz at 68 K. The resonant frequencies increased with decreasing temperature. The magnitude of the reflection coefficients was in the calculation of the unloaded Q-values. The performance of the evaporated and gold resonator are compared with the performance of a laser ablated YBa2Cu3O(7-x) resonator. The causes of the double resonance are discussed.
Superconductor/insulator/superconductor (SIS) tunnel junctions fabricated with base and counter electrodes of NbN separated by thin layers of MgO. Useful as submillimeter-wave mixers and fast switches. Use of edge geometry to define small junction makes possible to fabricate junction by process including conventional photolithography.
The high Tc Y1Ba2Cu3O(7-x) ceramic materials, initially developed in 1987, are now being extensively investigated for a variety of engineering applications. The superconductor applications which are presently identified as of most interest to NASA-LaRC are low-noise, low thermal conductivity grounding links; large-area linear Meissner-effect bearings; and sensitive, low-noise sensors and leads. Devices designed for these applications require the development of a number of processing and fabrication technologies. Included among the technologies most specific to the present needs are tapecasting, melt texturing, magnetic field grain alignment, superconductor/polymer composite fabrication, thin film MOD (metal-organic decomposition) processing, screen printing of thick films, and photolithography of thin films. The overall objective of the program was to establish a high Tc superconductivity laboratory capability at NASA-LaRC and demonstrate this capability by fabricating superconducting 123 material via bulk and thin film processes. Specific objectives include: order equipment and set up laboratory; prepare 1 kg batches of 123 material via oxide raw material; construct tapecaster and tapecaster 123 material; fabricate 123 grounding link; fabricate 123 composite for Meissner linear bearing; develop 123 thin film processes (nitrates, acetates); establish Tc and Jc measurement capability; and set up a commercial use of space program in superconductivity at LaRC. In general, most of the objectives of the program were met. Finally, efforts to implement a commercial use of space program in superconductivity at LaRC were completed and at least two industrial companies have indicated their interest in participating.
The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.
Array of closely spaced hot-film sensors with thickness well below critical reference height with regard to air-flow pattern nonintrusively detect laminar boundary-layer transitions with very high resolution. Method developed at NASA Langley Research Center to fabricate such sensors on polyimide films to detect boundary-layer transitions with resolution as high as 0.050 in. These films formed by combination of vacuum deposition and photolithography.
A unique process for texturing InP (100) wafers by anisotropic etching was developed. The process produces irregular V-grooves on the surface, which reduce the surface reflectivity. The process does not require photolithography or masking. The etching characteristics depend on doping, with etching tending to proceed more rapidly on the more heavily doped samples. Reduced reflectivity surfaces formed using this process can be applied to solar cells, photodetectors, and other optoelectronic devices.
Several technologies are currently being developed, leading to substantial improvements in the performance of UV detectors or significant reductions in power or weight. Four technologies discussed are (1) thin-film coatings to enhance the UV sensitivity of CCD's, (2) highly innovative magnet assemblies that dramatically reduce weight and result in virtually no external flux, (3) new techniques for curving microchannel plates (MCP's) so that single plates can be used to prevent ion feedback and present highly localized charge clouds to an anode structure, and (4) high-performance alternatives to glass-based MCP's. In item (2), for example, very robust magnets are made out of rare earth materials such as samarium cobalt, and cladding magnets are employed to prevent flux from escaping from the detector into the external environment. These new ultralight magnet assemblies are able to create strong, exceptionally uniform magnetic fields for image intensification and focusing of photoelectrons. The principle advantage of such detectors is the quantum efficiencies of 70-80 percent obtained throughout ultraviolet wavelengths (900-2000 A), the highest of any device. Despite the improvements achieved under item (3), high-performance alternatives to conventional glass-based MCP's potentially offer three distinct new advantages that include (1) a 30-100-fold improvement in dynamic range resulting in correspondingly higher signal-to-noise ratios, (2) the use of pure dielectric and semiconductor materials that will not outgas contaminants that eventually destroy photocathodes, and (3) channels that have constant spacing providing long-ranged order since the plates are made using photolithography techniques from the semiconductor industry. The manufacturers of these advanced-technology MCP's, however, are a couple of years away from actually producing a functioning image intensifier. In contrast to the use of CCD's for optical, ground based observations, there is no single detector technology in the ultraviolet that dominates or is as universally suitable for all applications. Thus, several technological problems, recent advances, and the impact that these new enabling technologies represent for UV applications are addressed.
The ability to pattern ion-implantation damaged or other nondiamond carbon on a diamond substrate is useful for fabricating a variety of devices. We accomplished such patterning by an unmasked implantation into a diamond substrate followed by photolithography and a selective electrochemical etch. The use of a high resistivity medium coupled with applied biases over 50 V permitted etching without requiring contact between the substrate and an electrode. Many electrolytes gave etches that exhibit high selectivity for nondiamond carbon over both diamond and dielectrics such as photoresist. Optical, electrical, and Raman spectroscopic measurements elucidate the effects of the etch on the implanted diamond surface.
Microstrip detectors are an exciting new development in proportional counter design fabricated using integrated circuit-type photolithography techniques; they therefore offer very high spatial accuracy and uniformity. A development program is underway at NASA-Marshall to produce large-area microstrips for use in an X-ray detector balloon flight program and to investigate the general performance limits of these new devices. Microstrips tested so far have been fabricated both in-house using standard photolithographic techniques and by an outside contractor using electron beam technology. Various substrate materials have been tested along with different electrode configurations. The distributions of pickup on subdivided cathodes on both top and bottom surfaces of the microstrips are also being investigated for use as two-dimensional imaging detectors. Data from these tests in the development of a large-area device will be presented.
Subcritical crack growth under mixed-mode loading was studied in soda-lime glass. Pure mode I, combined mode I and mode II, and pure mode II loadings were achieved in precracked disk specimens by loading in diametral compression at selected angles with respect to the symmetric radial crack. Crack growth was monitored by measuring the resistance changes in a microcircuit grid consisting of parallel, electrically conducting grid lines deposited on the surface of the disk specimens by photolithography. Subcritical crack growth rates in pure mode I, pure mode II, and combined mode I and mode II loading could be described by an exponential relationship between crack growth rate and an effective crack driving force derived from a mode I-mode II fracture toughness envelope. The effective crack driving force was based on an empirical representation of the noncoplanar strain energy release rate. Stress intensities for kinked cracks were assessed using the method of caustics and an initial decrease and a subsequent increase in the subcritical crack growth rates of kinked cracks were shown to correlate with the variations of the mode I and the mode II stress intensities.
Bolometers operating at low temperatures (T greater than 0.3 K) are the best candidate for far infrared (lambda greater than or = 120 microns) and submillimeter detection from cold orbiting telescopes. The limits of sensitivity for such devices have been studied (Mather, 1983). Based on this work, we conclude that excellent sensitivity is possible given careful detector design. We have designed and are fabricating bolometers for operation at low temperatures. The crucial components in detector design are (1) heat capacity, (2) temperature sensing, and (3) absorption of infrared radiation. In this presentation, we discuss the choice of materials and fabrication techniques we have made in the interest of maximum sensitivity. In order that optimization of detector performance be reasonably easy to carry out, we have attempted to use conventional fabrication techniques wherever possible (photolithography, wire bonding). The use of such procedures allows us to make design changes on short time scales, which is essential in achieving optimal performance.
Conventional silicon micromachining techniques produce micrometer-sized rectangular apertures. Used to define source and detector openings for measurements of images and scattered light in visible, ultraviolet, and soft x-ray wavelength regions, and as general-purpose optical slits or slit arrays. Rectangular microscopic apertures replace circular pinholes made by puncturing foils with needles or by drilling foils with intense, highly-focused laser beams. Precise photolithography yields apertures of superior geometry.
A review of binary optics processing technology is presented. Pattern replication techniques have been optimized to generate high-quality efficient microoptics in visible and infrared materials. High resolution optical photolithography and precision alignment is used to fabricate maximally efficient fused silica diffractive microlenses at lambda = 633 nm. The degradation in optical efficiency of four-phase-level fused silica microlenses resulting from an intentional 0.35 micron translational error has been systematically measured as a function of lens speed (F/2 - F/60). Novel processes necessary for high sag refractive IR microoptics arrays, including deep anisotropic Si-etching, planarization of deep topography and multilayer resist techniques, are described. Initial results are presented for monolithic integration of photonic and microoptic systems.
Employing recent advances in microfabrication, the Charles Stark Draper Laboratory has developed inertial guidance instruments of very small size and low cost. Microfabrication employs the batch processing techniques of solid state electronics, such as photolithography, diffusion, and etching, to carve mechanical parts. Within a few years, microfabricated gyroscopes should perform in the 10 to 100 deg/h range. Microfabricated accelerometers have demonstrated performance in the 50 to 500 microgravity range. These instruments will result in not only the redesign of conventional military products, but also new applications that could not exist without small, inexpensive sensors and computing. Draper's microfabricated accelerometers and gyroscopes will be described and test results summarized. Associated electronics and control issues will also be addressed. Gimballed, vibrating gyroscopes and force rebalance accelerometers constructed from bulk silicon, polysilicon surface-machined tuning fork gyroscopes, and quartz resonant accelerometers and gyroscopes are examined. Draper is pursuing several types of devices for the following reasons: to address wide ranges of performance, to realize construction in a flat pack, and to lessen the risks associated with emerging technologies.
The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.
The research work presented in this report has established a new class of backscatter fiber optics probes for remote dynamic light scattering capability over a range of scattering angles from 94 degrees to 175 degrees. The fiber optic probes provide remote access to scattering systems, and can be utilized in either a noninvasive or invasive configuration. The fiber optics create an interference free data channel to inaccessible and harsh environments. Results from several studies of concentrated suspension, microemulsions, and protein systems are presented. The second part of the report describes the development of a new technology of wavefront processing within the optical fiber, that is, integrated fiber optics. Results have been very encouraging and the technology promises to have significant impact on the development of fiber optic sensors in a variety of fields ranging from environmental monitoring to optical recording, from biomedical sensing to photolithography.