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Phase-locked loop with photoresistive control, which provides both sine and cosine outputs for subcarrier demodulation, serves as a telemetry demodulator signal conditioner with a second harmonic signal for synchronization with the locally generated code.
Acoustic field effects on gallium arsenide, silicon solar cells, and photoresistive devices with and without light exposure
The engineering development directed to improvement in strapdown electrically suspended gyro (SD/ESG) readout accuracy are described. The results of this development effort were represented by new and modified parts which were assembled into a strapdown ESG which was evaluated in terms of its readout system accuracy. The program performance goal was the demonstration of gyro readout to an accuracy of 15 arc-seconds or better. The results of calibrating over two sets of data were error amounts of 11.4 and 12.7 arc-seconds rms. The rms values of readout error were 12.7 and 13.8 arc-seconds for two sets of data not included in the calibration. The techniques for rotor preparation which were investigated under this contract included the application of a thin metal coating to the rotor surface in addition to the use of bare, polished beryllium rotors. Patterning application means which were utilized included a laser for pattern exposure of a photoresist coating and a grit-blast patterning machine which applied the pattern directly onto the metal surface of the rotor.
Holography with standing surface plasma waves, where both reference and object beams propagate in opposite directions, has been investigated using an Al reflection grating coated with evaporated As2S3 layers. The image, which appears only for p-polarization and at certain critical angles, is enhanced by the Lippman-Bragg effect and by an increase in intensity over ordinary holography approximately equal to the absolute value of the real part of the dielectric constant for Al. Also considered is holography with object light alone in photoresist layers, using the beam-splitting properties of the grating.
Method determines desirable direction to apply photoresist mask when fabricating semiconductor lasers. Method can be applied to finished wafer without affecting device yield.
The dark and photoconductivities of four high voltage spacecraft insulators, Kapton-H, FEP Teflon, Parylene, and fused quartz, were studied under a variety of conditions intended to simulate a space environment. All measurements were made in a vacuum of less than .00001 torr while the temperature was varied from 22 C to 100 C. Some of the samples used employed conventional deposited metal electrodes--others employed electrodes composed either of an electron beam or a plasma formed by ionization of the residual gas in the test chamber. Test results show: (1) Kapton had unusual conduction properties; it conductivity decreased by more than an order of magnitude when heated at 100 C in a vacuum, but ultimately attained a stable and reproducible value. (2) Both Teflon and fused quartz had high dark resistivities but low photoresistivities when exposed to UV. Optical-density measurements revealed that both materials transmitted UV with little attenuation. (3) Parylene was found to have a low but relatively stable resistivity--comparatively minor changes occurred upon heating or illuminating the sample. Optical-density measurements showed that Parylene was absorbent in the UV and would prevent photoemission from the metal electrode on the back surface.
Holographic recording materials in current use are examined along with a few of their applications. Some experimental media are also studied. No effort is made to rank the commercial materials, since satisfactory results can be obtained with any of them. The discussion covers silver halide plates and films, photoresists, thermoplastics, photopolymers, dichromated gelatin, photochromic materials, electrooptical crystals, styryl free radical film, and TEP film. A convenient summation of some material properties is presented in tabular form.
Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied: sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source was used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing was tried with many materials and has a multitude of potential applications.
This paper describes the results of an investigation of the nonpropulsive applications of electric propulsion technology. Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied - sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source has also been used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing has been tried with many materials and has a multitude of potential applications.
The manufacture and properties of a grating intended for extrasolar X-ray studies are described. The manufacturing process uses a split laser beam exposing an interference pattern on the photoresist-coated glass plated with a nickel parting layer. The grating, supporting structure, and mounting frame are electrodeposited on the nickel parting layer, and the final product is lifted from the glass substrate by selective etching of the nickel. A model was derived which relates the number of counts received in a given order m as a function of photon wavenumber. A 4-deg beam line was used to measure the efficiencies of gold transmission gratings for diffraction of X-rays in the range of 45 to 275 eV. The experimental results are in good agreement with model calculations.
Computer-generated reflection holograms hold substantial promise as a means of carrying out complex machining, marking, scribing, welding, soldering, heat treating, and similar processing operations simultaneously and without moving the work piece or laser beam. In the study described, a photographically reduced transparency of a 64 x 64 element Lohmann hologram was used to make a mask which, in turn, was used (with conventional photoresist techniques) to produce a holographic reflector. Images from a commercial CO2 laser (150W TEM(00)) and the holographic reflector are illustrated and discussed.
Comprehensive measurements in the vacuum UV range of 1200-3000 A of efficiency, polarization, and scattering of classically ruled and photoresist gratings are reported. The results show that the art of ruling gratings for vacuum UV use has reached a high level of sophistication and that careful analysis of grating properties can lead to useful improvement of the ruling art.
Manual gives detailed test procedures for controlling silicon-wafer processing in manufacture of integrated circuits. Included among 43 test procedures are: ionic, bacterial, and solids contamination of high-purity water needed for wafer processing; crystallographic reflection, purity, and orientation; substrate dimensions and finish; thickness of deposited epitaxial films; oxide quality; photoresist characteristics; pinholes in insulating layers; metallized adhesion; and quality of ohmic contact.
Modified ion-bombardment technqiue interconnects MOS circuit elements without affecting circuit parameters. Multilevel metalization involves: surface treatment prior to metalization; first metalization; metal pattern definition and photoresist removal; dielectric deposition; second metalization; and final dielectric deposition.
Commercial electroless Cu solutions were used. Satisfactory adhesion (and fairly good cell performance) resulted from the use of thin layers of barrier metals such as Au, Cr or Pd. In these tests, photoresist masks were used to contact silicon P-type slices with diffused N+ and alloyed P+ surfaces; and electrolytic Cu solution was used to build up the contact thickness to provide good cell behavior. In addition some cells with evaporated Cr-Cu contacts were also made (along with evaporated Ti-Pd-Ag contacts as controls), with the intention of subjecting cells to gradually increasing heat-treatments, to determine whether Cu causes the cells to be inherently unstable.
During the program a process sequence was proposed and tested for the fabrication of dendritic welb silicon into solar modules. This sequence was analyzed as to yield and cost and these data suggest that the price goals of 1986 are attainable. Specifically, it was shown that a low cost POCL3 is a suitable replacement for the semiconductor grade, and that a suitable CVD oxide can be deposited from a silane/air mixture using a Silox reactor. A dip coating method was developed for depositing an antireflection coating from a metalorganic precursor. Application of photoresist to define contact grids was made cost effective through use of a dip coating technique. Electroplating of both Ag and Cu was shown feasible and cost effective for producing the conductive metal grids on the solar cells. Laser scribing was used to separate the cells from the dendrites without degradation. Ultrasonic welding methods were shown to be feasible for interconnecting the cells. A study of suitable low cost materials for encapsulation suggest that soda lime glass and phenolic filled board are preferred.
A 4-phase, 49 1/2 bit CCD shift register was designed and fabricated using two levels of aluminum metallization with anodic Al2O3 insulation separating the layers. Test circuitry was also designed and constructed. A numerical analysis of an MOS-RC transmission line was made and results are given to characterize performance for various conductivities. The electrical design of the CCD included a low-noise dual-gate input and a balanced floating diffusion output circuit. Metallization was accomplished both by low voltage DC sputtering and thermal evaporation. The audization was according to published procedures using a buffered tartaric acid bath. Approximately 20 wafers were processed with 50 complete chips per wafer. All devices failed by shorting between the metal levels at some point. Experimental procedures eliminated temperature effects from sintering and drying, anodic oxide thickness, edge effects, photoresist stripping procedures, and metallization techniques as the primary causes of failure. It was believed from a study of SEM images that protuberances (hillocks) grow up from the first level metal through the oxide either causing a direct short or producing a weak, highly stressed insulation point which fails at low voltage. The cause of these hillocks is unknown; however, they have been observed to grow during temperature excursions to 470 C.
The successful fabrication and demonstration of an integrated optical circuit designed to perform a parallel processing operation by utilizing holographic subtraction to simultaneously compare N analog signal voltages with N predetermined reference voltages is summarized. The device alleviates transmission, storage and processing loads of satellite data systems by performing, at the sensor site, some preprocessing of data taken by remote sensors. Major accomplishments in the fabrication of integrated optics components include: (1) fabrication of the first LiNbO3 waveguide geodesic lens; (2) development of techniques for polishing TIR mirrors on LiNbO3 waveguides; (3) fabrication of high efficiency metal-over-photoresist gratings for waveguide beam splitters; (4) demonstration of high S/N holographic subtraction using waveguide holograms; and (5) development of alignment techniques for fabrication of integrated optics circuits. Important developments made in integrated optics are the discovery and suggested use of holographic self-subtraction in LiNbO3, development of a mathematical description of the operating modes of the preprocessor, and the development of theories for diffraction efficiency and beam quality of two dimensional beam defined gratings.