NASA NTRS · 19790000562
Multilayer metalization of MOS IC's
Abstract
Modified ion-bombardment technqiue interconnects MOS circuit elements without affecting circuit parameters. Multilevel metalization involves: surface treatment prior to metalization; first metalization; metal pattern definition and photoresist removal; dielectric deposition; second metalization; and final dielectric deposition.
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Bouldin, D. L., Feltner, W. R., Hollis, B. R., Jr., Routh, D. E.. 1980-06-01. Multilayer metalization of MOS IC's. https://ntrs.nasa.gov/citations/19790000562
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