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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Achieving giant electrostrain of above 1% in (Bi,Na)TiO 3 -based lead-free piezoelectrics via introducing oxygen-defect composition

Piezoelectric ceramics have been extensively used in actuators, where the magnitude of electrostrain is key indicator for large-stroke actuation applications. Here, we propose an innovative strategy based on defect chemistry to form a defect-engineered morphotropic phase boundary and achieve a giant strain of 1.12% in lead-free Bi 0.5 Na 0.5 TiO 3 (BNT)–based ceramics. The incorporation of the hypothetical perovskite BaAlO 2.5 with nominal oxygen defect into BNT will form strongly polarized directional defect dipoles, leading to a strong pinning effect after aging. The large asymmetrical strain is mainly attributed to two factors: The defect dipoles along crystallographic [001] direction destroy the long-range ordering of the ferroelectric and activate a reversible phase transition while promoting polarization rotation when the dipoles are aligned along the applied electric field. Our results not only demonstrate the potential application of BNT-based materials in low-frequency, large-stroke actuators but also provide a general methodology to achieve large strain.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Second Annual Progress Report on Correlation Between Microstructure and Mechanical Properties of Neutron-Irradiated Ferritic-Martensitic and Austenitic Steels

Ferritic-martensitic steels G92-2b (an optimized Grade 92 heat), NF616 and T91, and austenitic stainless steel 800H and its Grain Boundary Engineering (GBE)-treated version 800H-TMP (ThermoMechanical Processing) were irradiated in the High Flux Isotope Reactor (HFIR) of Oak Ridge National Laboratory (ORNL) and the Advanced Test Reactor (ATR) of Idaho National Laboratory (INL). Selected G92-2b samples were irradiated up to 14.66 dpa in the HFIR at two temperature ranges: 400–496.7°C and 683.3– 720°C. NF616 and T91 were irradiated in the ATR up to 8.16 dpa with the irradiation temperatures ranged from 241°C to 447.5°C. Alloy 800H and 800H-TMP samples were irradiated in both the HFIR and the ATR. Selected 800H and 800H-TMP samples had HFIR irradiation to 1.28 dpa at 580°C and ATR irradiation up to 9.12 dpa at 359°C to 431°C. Vickers hardness measurements, fractography, and microstructural characterization were performed on the selected samples in the Low Activation Materials Design and Analysis (LAMDA) laboratory. Radiation-hardening of G92-2b was observed at the lower doses and lower irradiation temperatures (400- 496.7°C), with GB03 (0.52 dpa at 400°C) and GB04 (7.44 dpa at ~490°C) showing ~12% and ~8% hardening, respectively. Softening by ~14% was observed for GB05 (14.66 dpa at 496.7°C). Radiationsoftening of G92-2b was more prevalent at the higher irradiation temperatures (683.3-~720°C), with GB10 (0.46 dpa at 683.3°C), GB11 (7.44 dpa at ~720°C), and GB12 (14.63 dpa at ~720°C) showing ~8%, ~8%, and ~40% softening, respectively. Radiation-hardening of NF616 and T91 was observed with the hardness increased by ~37% to ~65% depending on the irradiation doses and irradiation temperatures. Within the studied irradiation conditions of NF616 and T91, samples with a higher dose had a larger hardness after irradiation. All the tested alloy 800H and 800H-TMP samples in this work showed radiation-hardening by ~96±7% to ~152±10%. Alloy 800H-TMP tended to have slightly smaller radiation-hardening than alloy 800H. The fractography results of G92-2b sample GB03, GB10, and GB11, together with the previously characterized fractography of GB04, GB05, and GB12, indicated that the ductility of G92-2b was maintained up to 14.66 dpa at the lower irradiation temperatures of 400-496.7°C, while some loss of ductility (less necking) was observed for higher doses at the higher irradiation temperatures of 683.3-720°C. This agrees with the previously reported tensile test results of G92-2b, where the elongation of G92-2b was reduced at higher doses at the higher irradiation temperatures. Dimple sizes increased at higher doses, which are more evident at the higher irradiation temperatures of 683.3-~720°C. The fractography of NF616 sample D2 (2.96 dpa at 291.5°C), D4 (5.91 dpa at 359°C), and D6 (8.16 dpa at 431°C) indicated loss of ductility with negligible necking for sample D2, while ductile failure for samples D4 and D6. Fractography of alloy 800H and 800H-TMP samples in various irradiation conditions showed ductile failure with obvious necking. Dimples were observed, with some of them containing large Ti-rich particles, in all the 800H/800H-TMP samples. Electron backscatter diffraction characterization of GB12 indicated the recovery of the lath structure, which was generally replaced by an equiaxed grain structure. Transmission electron microscopy (TEM) characterization showed the presence of frequent M 23 C 6 (M = primarily Cr), MX (M = primarily V), spherical Nb(C,N) precipitates, and occasional Laves phase precipitates in the G92-2b samples. MX precipitates with sizes of 20-30 nm were observed at boundaries of smaller grains, indicating the pinning effect of the V-rich precipitates. The lath structure recovery was more evident at the higher irradiation temperatures (683.3-~720°C), with decreased densities of line dislocations and M23C6 precipitates. The irradiated T91 (TA04) showed the growth of M23C6 precipitates to 101 ± 40 nm from the initial 68 ± 22 nm in the unirradiated condition. Dislocation loops of both {100} and {111} types were present in TA04. TEM characterization was also performed on the irradiated 800H (N4, N5, N6, and AR2) and 800H-TMP (P4, P5, P6, and HG1). Accumulation of M 23 C 6 precipitates at grain boundaries was observed in all the xii 800H/800H-TMP samples, and the presence of Ti(C,N) precipitates at grain boundaries and in the matrix was observed in the irradiated 800H-TMP. Some Ti(C,N) precipitates are embedded in the M 23 C 6 precipitates, maintaining specific orientation relationships between the precipitates and between the precipitate and matrix. In addition, nanoscale Si-rich clusters were observed in the matrix of all the 800H/800H-TMP samples, with EDS Si maps tending to have a lower contrast in 800H-TMP samples. Atom probe tomography was conducted on the same samples, supported by a Rapid Turnaround Examination project under Nuclear Science User Facilities. The results are being analyzed to be integrated with the TEM results for a confident description of the γ’ precipitates. Dislocation loops also formed in all the 800H/800H-TMP samples. The density and the average size of dislocation loops were quantified to be in the order of 10 22 – 10 23 m -3 and 11.7 – 15.9 nm, respectively, in the ATR-irradiated 800H/800H-TMP samples. The loop densities in irradiated 800H were higher than that in irradiated 800H-TMP under the same irradiation conditions. Further systematic data analyses, together with some complementary experiments, will be pursued for these samples to foster peer-reviewed journal article publications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Production of Creep-Resistant FeCrAl-ODS

Four ODS FeCrAl alloys with base alloy composition Fe-16Cr-4Al-2Mo-0.2Y (wt.%) were mechanically alloyed with minor additions of CeO 2 and Y 2 O 3 additions and were successfully extruded into rectangular-shaped bars. Two oxide compositions were explored, which were designated NC with oxide addition of 0.5CeO 2 plus 0.2Yin solution of the base alloy powder and PC with additions of 0.5CeO 2 and 0.7Y 2 O 3 to elevate the O level. The microstructure of both alloys revealed by SEM and EBSD to consist of very small grains with sizes of ~450-520 nm and weak texture components. Sub-size tensile specimens fabricated from both alloys were tensile tested from room temperature to 800ºC. The results for both alloys from room temperature to 400ºC showed very high strengths, but low ductilities, especially uniform strain. From 500ºC to 800ºC, the strengths decreased rapidly, and the ductilities increased significantly. The reason for the rapid decreases in tensile strengths above 500ºC for both alloys is not clear, but will require advanced characterization techniques including atom probe tomography, to determine the size and number density of the nano-size oxide particles, and TEM/EFTEM, for investigating the dispersion of nano-size oxide particles on grain boundaries to assess the Zener grain boundary pinning effect, which will hinder grain coarsening at high temperatures that may enhance the Hall Petch strengthening mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Non-Equilibrium relaxation, aging scaling, and critical depinning dynamics of skyrmions in disordered magnetic films. Final Report

Technical applications of type-II superconductors, especially high-Tc compounds, in external magnetic fields require an effective flux pinning mechanism to reduce Ohmic losses due to flux creep and flow. Naturally abundant point defects, dislocations, and twin boundaries as well as artificially introduced disorder may serve as effective pinning centers for magnetic vortices. The properties of interacting flux lines subject to strong thermal fluctuations and point-like or extended pinning centers have therefore been a major research focus in condensed matter physics, and considerable progress has been achieved in the characterization and mathematical description of the equilibrium phases and non-equilibrium steady states of vortex matter. Detailed studies of the rich phase diagrams that reveal novel glassy states as well as the associated complex dynamical phenomena have in turn enriched the theoretical understanding of condensed matter systems, elucidating specifically the kinetics of elastic objects driven through disordered media and the important role of topological defects such as vortices and dislocations in various materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Effect of correlated oxide electrodes on disorder pinning and thermal roughening of ferroelectric domain walls in epitaxial PbZr 0.2 Ti 0.8 O 3 thin films

We report the competing effects of disorder pinning and thermal roughening on ferroelectric domain walls as a function of temperature in epitaxial PbZr 0.2 Ti 0.8 O 3 thin films deposited on (001) SrTiO 3 substrates buffered by three types of correlated oxide electrodes, La 0.67 Sr 0.33 MnO 3 , LaNiO 3 , and SrIrO 3 . Piezo-response force microscopy studies show that the 50 nm PbZr 0.2 Ti 0.8 O 3 films are uniformly polarized in the as-grown states, with the patterned domain structures persisting above 700 °C. For all three types of films, the domain wall roughness is dominated by 2D random bond disorder at room temperature, and transitions to 1D thermal roughening upon heating. The roughness exponent ζ increases progressively from 0.3 to 0.5 within a temperature window that depends on the bottom conducting oxide type, from which we extracted the distribution of disorder pinning energy. Lastly, we discuss the possible origins of the disorder pinning and the effect of the correlated oxide electrodes on the energy landscape of DW motion.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Modeling the interfacial failure and resulting mechanical properties of z-pinned additively manufactured composites

The mechanical properties of Fused Filament Fabrication (FFF) parts are limited in the build direction, albeit advantages such as design flexibility and in-house customization. Here, in this paper, a novel z-pinning approach that enhances mechanical properties in the build direction by depositing material across multiple layers within the part was investigated through numerical simulations and validated experimentally. A finite element model for z-pinned composite structures was developed by assigning fiber-orientation dependent material properties obtained using a micromechanics approach to beads and pins. The bead-to-bead and pin-to-pin adhesions within the z-pinned structures were modeled using a cohesive traction separation law. The properties of cohesive elements for carbon fiber-reinforced polylactic acid (CF-PLA) z-pinned composites were calibrated using tensile experiments. The elastic modulus and tensile strength of CF-PLA z-pinned composites in the build direction were predicted with the developed numerical model. The numerical investigation on various geometrical parameters revealed that the largest pin volume increases the stiffness and tensile strength by 40% and thus, has the greatest influence on the mechanical properties of the z-pinned composites. The effect of z-pin geometrical parameters on the mechanical properties was summarized to aid in the design of z-pinned additively manufactured composite structures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Reentrant pinning, dynamic row reduction, and skyrmion accumulation for driven skyrmions in inhomogeneous pinning arrays

In this work, we examine the dynamics of skyrmions in systems with a region of strong pinning coexisting with a pin-free region, where the equilibrium state has a uniform skyrmion density. Under an applied drive, skyrmions accumulate in the pin-free region along the edge of the pinned region due to the skyrmion Hall effect. As the drive increases, a series of dynamical structural transitions occur in the flowing skyrmion lattice similar to those observed in the compression dynamics of crystals. These transitions correspond to reductions in the number of flowing rows of skyrmions due to the collective motion of the skyrmions into the pinned region, and they are accompanied by a series of steps in the velocity force curves leading to a negative differential conductivity. When the number of pinning sites is sufficiently large, a drive-induced pinning effect can occur in which the skyrmion Hall effect forces all of the skyrmions to enter the strongly pinned region. This reentrant pinning effect becomes more pronounced for increasing intrinsic skyrmion Hall angle and larger pinning sites.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Material-dependent photon ionizing radiation effects in Si and GaAs PIN diodes: A numerical investigation

We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Domain state exchange bias in a single layer FeRh thin film formed via low energy ion implantation

Modern spintronics relies heavily on the exchange bias effect to pin the orientation of ferromagnetic layers in magnetic tunnel junctions. The current implementations of exchange bias in magnetic tunnel junctions employ pristine interfaces between antiferromagnetic and ferromagnetic layers. Here we reveal an interfacial exchange bias introduced by a single-step, low-energy ion implantation process in a single layer FeRh thin film. Both 1 keV He + ions and 5 keV Fe + were investigated, their energy selected to ensure the ions would stop within the FeRh film. The ions reduce the metamagnetic transition temperature through defect generation to form a surface layer with ferromagnetic ordering. Temperature dependent magnetism measurements reveal a room temperature exchange bias between the ferromagnetic surface and the antiferromagnetic bulk of ~41 Oe in 5 keV Fe + implanted samples and ~36 Oe for 1 keV He + implanted samples. We directly scrutinize this exchange bias effect in magnetic depth profiles obtained by polarized neutron reflectometry which clearly show a pinned ferromagnetic layer adjacent to the disordered layer created by low energy Fe + ion implantation. These results reveal a novel method to implement exchange bias in an antiferromagnetic layer that can have direct application in the field of spintronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Impact of Radial Reflector Fidelity on Neutronics and Vessel Fluence Simulations

The Consortium for Advanced Simulation of Light Water Reactors is developing the Virtual Environment for Reactor Applications (VERA), and the MPACT code, which is the primary deterministic neutron transport solver in VERA, provides sub-pin level flux and power distributions as part of full-scale cycle depletion and analysis. In such calculations, an important aspect is the radial reflector treatment. To improve the fidelity of the radial reflector treatment, MPACT was extended to approximate the modeling of the reactor’s structural components such as the core shroud, barrel, neutron pads, and vessel. This work explores several modeling configurations with varying levels of fidelity and computational burden and assesses the importance of modeling fidelity on the eigenvalue and pin power distribution. Two two-dimensional (2-D) problems were analyzed to assess the impact on eigenvalue and pin power distributions with low-fidelity, coarse square cell reflector representations: (1) a Watts Bar Nuclear Plant Unit 1 (WBN1) quarter-core slice with depletion and (2) an AP1000 quarter-core slice. In this work, the analyses showed that the effect on eigenvalue is fairly small, but the effect on pin power is more pronounced, especially locally in the assemblies closest to the periphery, where the maximum pin power difference is nearly 3.5% in the AP1000 case. Two additional 2-D problems were used to assess the comparison between the low-fidelity coarse square cell treatment and a high-fidelity geometric representation that uses subpin material specification: (1) the same WBN1 quarter-core slice and (2) a representative model of the NuScale small modular reactor (SMR), which features a solid reflector design with moderator holes. These results demonstrate that even a coarse, low-fidelity representation adequately captures the necessary simulation characteristics. Last, these capabilities were applied to the 2-D WBN1 quarter-core depletion to assess the impact on vessel fluence using VeraShift. From adjoint calculations, pins along the periphery were observed to be of highest importance for fluence calculation, so the impact of the reflector representation in MPACT could theoretically substantially affect the predicted result. However, it was observed that the change in pin powers along the periphery minimally impacts the maximum vessel fluence with a difference within the statistical uncertainty but provides terrific insight on the sensitivity of the peripheral pins.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2021

Visualizing the strongly reshaped skyrmion Hall effect in multilayer wire devices

Magnetic skyrmions are nanoscale spin textures touted as next-generation computing elements. When subjected to lateral currents, skyrmions move at considerable speeds. Their topological charge results in an additional transverse deflection known as the skyrmion Hall effect (SkHE). While promising, their dynamic phenomenology with current, skyrmion size, geometric effects and disorder remain to be established. Here we report on the ensemble dynamics of individual skyrmions forming dense arrays in Pt/Co/MgO wires by examining over 20,000 instances of motion across currents and fields. The skyrmion speed reaches 24 m/s in the plastic flow regime and is surprisingly robust to positional and size variations. Meanwhile, the SkHE saturates at ~22 ° , is substantially reshaped by the wire edge, and crucially increases weakly with skyrmion size. Particle model simulations suggest that the SkHE size dependence - contrary to analytical predictions - arises from the interplay of intrinsic and pinning-driven effects. These results establish a robust framework to harness SkHE and achieve high-throughput skyrmion motion in wire devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Examining the creep strengthening nanoprecipitation in novel highly reinforced heat resistant steels

Here we studied the creep strengthening nanoprecipitation in novel heat resistant steels strengthened by a high density of stable nanoprecipitates. The results show that the high number density of MX nanoprecipitates within the martensitic laths in these steels comes from the great amount of MX former elements present in their chemical compositions and the high dislocation density generated by the martensitic transformation that takes place during cooling after austenitization. These dislocations act as nucleation sites for these nanoprecipitates during the tempering applied after the austenitization and quenching. Atom probe tomography measurements show that these nanoprecipitates are rich in Nb, V, Cr and N for the HDSN1 and HDSN2 steels and V, Cr and N for the HDSN3 steel. The distribution of the nanoprecipitates within the martensitic laths suggests that the creep strengthening produced by the Nb, V, Cr and N nanoprecipitates in the HDSN1 and HDSN2 steels is more effective at pinning dislocations at high temperature than that obtained in the HDSN3 steel by the V, Cr and N nanoprecipitates. However, the high amount of W in the HDSN3 steel enhances the solid solution strengthening at high temperatures, resulting in a similar high temperature strength for all HDSN steels.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Flux trapping in NbTiN strips

We use scanning superconducting quantum interference device (SQUID) microscopy to image vortices in superconducting structures fabricated from NbTiN thin films. We repeatedly cool superconducting strips with different width in an applied magnetic field and image the individual vortices. From these images we determine the threshold field at which the first vortex enters a strip and the number and configuration of vortices beyond this threshold field. We model the behavior of the vortices with and without considering the effect of pinning using numerical methods to minimize the Gibbs free energy of vortices in the strips. Our measurements provide a first benchmark to investigate the flux trapping properties of NbTiN thin films directly relevant to NbTiN-based superconducting digital circuits.

Bai, Ruiheng [Cornell University] (ORCID:000000025↗
DOE OSTI2022

Editorial: Generation, detection and manipulation of skyrmions in magnetic nanostructures

Due to their compact shape and small size down to a few nanometers, good thermal stability, and low driven current density, magnetic skyrmions have become promising building blocks for high-density storage and fast information processing applications. In a dozen years, this field dubbed as skyrmionics has attracted significant attention for exploring fundamental physics as well as for practical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Melting, reentrant ordering and peak effect for Wigner crystals with quenched and thermal disorder

Abstract We consider simulations of Wigner crystals in solid state systems interacting with random quenched disorder in the presence of thermal fluctuations. When quenched disorder is absent, there is a well defined melting temperature determined by the proliferation of topological defects, while for zero temperature, there is a critical quenched disorder strength above which topological defects proliferate. When both thermal and quenched disorder are present, these effects compete, and the thermal fluctuations can reduce the effectiveness of the quenched disorder, leading to a reentrant ordered phase in agreement with the predictions of Nelson (1983 Phys. Rev. B 27 2902–14). There are two competing theories for the low temperature behavior, and our simulations show that both capture aspects of the actual response. The critical disorder strength separating ordered from disordered states remains finite as the temperature goes to zero, as predicted by Cha and Fertig (1995 Phys. Rev. Lett. 74 4867–70), instead of dropping to zero as predicted by Nelson. At the same time, the critical disorder strength decreases with decreasing temperature, as predicted by Nelson, instead of remaining constant, as predicted by Cha and Fertig. The onset of the reentrant phase can be deduced based on changes in the transport response, where the reentrant ordering appears as an increase in the mobility or the occurrence of a depinning transition. We also find that when the system is in the ordered state and thermally melts, there is an increase in the effective damping or pinning. This produces a drop in the electron mobility that is similar to the peak effect phenomenon found in superconducting vortices, where thermal effects soften the lattice or break down its elasticity, allowing the particles to better adjust their positions to take full advantage of the quenched disorder.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Defect‐Induced, Ferroelectric‐Like Switching and Adjustable Dielectric Tunability in Antiferroelectrics

Abstract Antiferroelectrics, which undergo a field‐induced phase transition to ferroelectric order that manifests as double‐hysteresis polarization switching, exhibit great potential for dielectric, electromechanical, and electrothermal applications. Compared to their ferroelectric cousins, however, considerably fewer efforts have been made to understand and control antiferroelectrics. Here, it is demonstrated that the polarization switching behavior of an antiferroelectric can be strongly influenced and effectively regulated by point defects. In films of the canonical antiferroelectric PbZrO 3 , decreasing oxygen pressure during deposition (and thus increasing adatom kinetic energy) causes unexpected “ferroelectric‐like” polarization switching although the films remain in the expected antiferroelectric orthorhombic phase. This “ferroelectric‐like” switching is correlated with the creation of bombardment‐induced point‐defect complexes which pin the antiferroelectric–ferroelectric phase boundaries, and thus effectively delay the phase transition under changing field. The effective pinning energy is extracted via temperature‐dependent switching‐kinetics studies. In turn, by controlling the concentration of defect complexes, the dielectric tunability of the PbZrO 3 can be adjusted, including being able to convert between “positive” and “negative” tunability near zero field. This work reveals the important role and strong capability of defects to engineer antiferroelectrics for new performance and functionalities.

Pan, Hao↗
DOE OSTI2023

Variation of effective filament diameter, irreversibility field, anisotropy, and pinning efficiency in Bi-2212 round wires

Abstract In recent years Bi 2 Sr 2 CaCu 2 O x (Bi-2212) received increasing attention due to its round wire multifilamentary architecture, a unique feature in high- T c superconductor. In fact, round wires are preferable for magnet designs, including solenoids for nuclear magnetic resonance (NMR) or research purpose and accelerator magnets. However, due to the narrow over-pressure heat treatment conditions necessary to obtain high J c and to the peculiar microstructure of Bi-2212 wires, a full understanding of the correlations between the different properties has not yet been developed. In this paper we investigate the effect of a vital part of Bi-2212 optimization, the maximum heat-treatment temperature T max in the range of 885 °C–896 °C, on the variations of J c , effective filament diameter d eff , anisotropy γ , INTER- and intra-grain irreversibility fields and pinning energies U 0 , all critical parameters in unravelling the complex mix of vortex pinning and connectivity that ultimately determines the critical current density. We found that d eff of the higher J c wires heat-treated at lower temperature is much smaller than for the lower J c wires. Moreover, a systematic increase of the irreversibility field and a decrease of the intrinsic Bi-2212 anisotropy underpins the higher J c . The analysis of the pinning energies reveals that there is little sample-to-sample variation in the INTER-grain pinning, whereas in all samples the intra-grain pinning has an enhancement below ∼40–45 K becoming more and more evident with increasing J c . These results suggest that the overall J c performance are not only related to the wire microstructure and connectivity, which obviously affect the INTER-grain properties, but they are also intimately related to the intrinsic and intra-grain properties such as γ and U 0 .

Physics↗