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Results for “Radiation Hardness”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Inorganic ternary halide semiconductors for hard radiation detection

Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB2X5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.

Kanatzidis, Mercouri G.↗
DOE OSTI2023

Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes

Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm 2 , which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. In conclusion, the results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

In situ cryogenic characterization of proton damage in thick p-channel skipper CCDs

Skipper charge-coupled devices (CCDs) are an offshoot of standard silicon pixel detectors and are capable of performing repeated non-destructive charge measurements, enabling deeply sub-electron readout noise. This capability has opened the door to single-photon counting from the near-infrared ($\sim$1.1 $μ$m) to the soft X-ray (several keV), making these devices strong candidates for future astronomical instruments operating in the photon-starved limit. Furthermore, the p-channel architecture used to fabricate Skipper CCDs on n-type silicon has been demonstrated to have an increased hardness to the intense radiation environment of space. Building upon previous irradiation campaigns on room-temperature sensors, here we describe the first radiation-hardness tests of p-channel skipper CCDs at their cryogenic operating temperatures. We assess the performance of the floating-gate output stage and global CCD parameters (charge transfer inefficiency, dark current, hot pixels, and charge traps). We find that these devices maintain excellent performance after displacement damage doses equivalent to ${\sim}$10 years at the Earth/Sun L2 Lagrange point, demonstrating for the first time that these sensors remain radiation-hard in realistic deep-space thermal and radiation environments.

Roach, Brandon M. [Chicago U., KICP] (ORCID:000000↗
DOE OSTI2025

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Evaluation of Neutron-Radiation Tolerance of Lithium Indium Diselenide Semiconductors

Herein we discuss lithium indium diselenide (LISe) as a semiconductor that holds promise for neutron imaging sensor technologies because of its high neutron absorption efficiency and its corresponding ability to discriminate between gamma rays and neutrons. However, being a semiconductor, LISe may not be sufficiently radiation hard for practical application in radiation hard environments. Therefore, a systematic evaluation of the changes in material and electronic properties of LISe after high neutron fluence exposures is investigated. Herein, the characterization methods are utilized which included UV–vis, X-ray diffraction, radioluminescence, Raman, fourier transform infrared spectroscopy (FTIR), current–voltage, and neutron sensing. Characteristics of LISe material that appeared in the literature are identified herein along with several that are expected to appear based on theoretical analyses. The results obtained show clear changes in the material properties of LISe after neutron exposure up to a fluence of 10 16 n cm -2 . However, LISe is still able to sense neutrons above the background at 10 16 n cm -2 , suggesting that LISe may be suitable for use in neutron imaging sensors at neutron imaging facilities.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electronics for the far-forward CMS muon detector upgrade, ME0

Abstract With the High Luminosity upgrade of the Large Hadron Collider (LHC) we expect increased instantaneous luminosities up to 7.5 × 10 34 cm −2 s −1 , or five times more than the original values. In order to maintain performance of the Compact Muon Solenoid (CMS) experiment under these conditions, ME0 is one of three new muon sub-detectors being added, along with GE1/1 and GE2/1, which use the triple Gas Electron Multiplier (GEM) technology. ME0 is designed to cover the forward region of 2.0 < | η | < 2.8, thus improving muon reconstruction at high background rates by supplementing other overlapping muon subsystems up to | η | = 2.4, while also extending the acceptance for the first time to | η | = 2.8. The readout electronics for ME0 must be designed to accommodate high data rates and be sufficiently radiation hard to operate close to the beamline. The Optohybrid (OH) board for ME0, which reads out data from the front-end VFAT3b ASICs, has therefore been designed to operate without an FPGA (unlike GE1/1 and GE2/1) to ensure radiation hardness. The ME0 OH uses the radiation-hard CERN-designed lpGBT ASIC and VTRx+ optical transceiver module for high bandwidth optical links up to 10.24 Gb/s. The backend system is based on the ATCA standard. The design and development status of the readout electronics for ME0 is presented, along with recent results from integration tests performed using the first prototypes.

Instruments & Instrumentation↗
DOE OSTI2023

High Dose Rate Irradiations of Enduray Vision System for Nuclear Inspections

Higher radiation-hardened video cameras are needed in the operation and remote handling of equipment in nuclear reactor inspection and refueling applications. Vega Wave Systems, Inc. has developed a radiation-hardened vision system for nuclear energy applications. This vision system has been developed under several small business innovative research programs (SBIRs) from the U.S. Department of Energy, and the previous GAIN voucher program at Argonne National Laboratory (ANL) was successful in demonstrating that a prototype of the camera is radiation-hard up to at least 525 kGy (5.25 × 106 rad, Si equivalent) at dose rates of 10 kGy/hr with no measurable degradation in image quality and no measurable radiation-induced noise (RIN). Vega Wave Systems has developed a new version of the camera with more than 3X the resolution using a new design and new components, and this new design requires radiation-hardness qualification for marketplace acceptance. The program described in this report provided high radiation-hardness testing of this redesigned high-resolution vision system using the Argonne Low-Energy Accelerator Facility (LEAF). This report presents the results of irradiation tests performed on Vega Wave System’s redesigned high resolution vision system at a dose rate of 9.3 kGy/hr and up to total doses of 1823 kGy. This was an accumulation of 197 hours of irradiation. The results were excellent, providing proof of the redesigned high-resolution vision system’s immunity to high levels of radiation.

42 ENGINEERING↗
DOE OSTI2023

Development of local-power-free, remote α -particle detection using optical fibers

We demonstrate the application of fluorescence optical fiber coupled to a telecom grade fiber as a sensor for alpha particles using alpha-specific ZnS(Ag) scintillation materials whose wavelength is down-shifted into a low-loss region of the telecom grade fiber transmission band. Telecom-grade fiber optics offer a solution for sensing alpha radiation in deep repositories and cask storage for radioactive materials due to the stability of SiO 2 under normal environmental conditions and its relative radiation hardness at low radiation doses. Long-term nuclear waste storage facilities require sensors for the detection of leakage of radioactive materials that are maintenance-free, do not require power and can survive with no ‘wear out’ mechanisms for decades. By accomplishing the wavelength transformation, we maximize efficiencies in the detection of α-particles and signal transport and can detect alpha scintillation at distances on the order of >1 km with a sensor that is ~3% efficient and can be easily scaled as a sensor array. This paper describes the construction and testing of the sensor including manufacture of the controlled thickness films, verification of the wavelength shift from 450 to 620 nm and optimization of the sensitivity as a function of thickness. We also model the relative sensitivity of the film as a function of film thickness, and we demonstrate a signal-to-noise ratio of 10 at a range of greater than 1 km.

alpha particles↗
DOE OSTI2025

Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design

Alpha particles are known to be a major source of particles creating soft errors in semiconductor devices, such as content flipping in Static Random-Access Memory (SRAM). Recent advancements in transistor nodes have led to the introduction of Gate-All-Around Field Effect Transistors (GAA-FETs), which have better gate control, thus better electrostatics. Moreover, the introduction of bottom dielectric isolation (BDI) eliminates substrate leakage and thus is expected to enhance its radiation hardness. It is thus important to explore if one can design an SRAM that is completely radiation-hard to alpha particles. In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design an SRAM using GAA-FET technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LET max , for the alpha particle in Si and Si x Ge 1-x . Based on that, by de signing a sub-7nm GAA-FET-based SRAM with BDI, we show that the SRAM does not flip even if the particle strike is in the worst-case scenario for LET > LET max .

42 ENGINEERING↗