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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Chapter 6: Thermoelectric Energy Harvesters and Applications

With recent progress in the field of wearable and bio-integrated devices, which are widely used for various applications, such as real-time health monitoring, point-of-care diagnostics, and biological actuators, the need for a continuous and reliable power source is increasing. As solid-state devices with no moving parts, thermoelectric energy generators provide a reliable solution for harnessing body heat and converting it into electricity on demand. However, traditional thermoelectric generators, comprising inorganic materials, are rigid and bulky, limiting their wide deployment. Nonconventional thermoelectric generators, composed of organic and hybrid thermoelectric materials, are flexible and lightweight. In this chapter, we will discuss the working principle of thermoelectric energy harvesting, including materials, devices, and applications. While we briefly touch upon the inorganic materials, we will focus primarily on the organic and hybrid materials, which are nontoxic, flexible, easy to manufacture, easy to scale, and readily available at low cost, providing a promising solution for lightweight and conformal thermoelectric power generation.

body heat harvesting↗
DOE OSTI2024

Cost-effective Conductor, Cable, and Coils for High Field Rotating Electric Machines

The purpose of the DOE-AMMTO-funded project was to significantly reduce industrial energy intensity through manufacturing innovations. The project focused on superconducting technology for industrial motors to dramatically increase efficiency. The bottleneck in deploying high temperature superconducting (HTS) motors was high cost and low yield of the conductor manufacturing process. The process yield is low because of the defects in the conductor, forcing the manufacturers to cut off defective sections after characterizing each millimeter. Additionally, the piece lengths tend to be low because of the defects. The project tackled the low-yield manufacturing process challenge by devising an innovative method to use defective conductors in bundled cables without losing performance by engineering current sharing among the conductors. The innovation not only lowers the cost of the conductor but also enhances the reliability of HTS motors and other devices to mitigate the defects that might form during the fabrication and operation of the device. With the increasing interest in REBa2Cu3O7-x (REBCO)-coated conductors for various power, energy, and magnet applications, ensuring the reliability of HTS devices is of significant interest. The EERE funding allowed us to make significant progress in understanding the defects in manufactured conductors and the implications of the defects in superconducting electric motors and other superconducting power and energy applications.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2020

Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure

The morphology of GaN-on-GaN vertical p-i-n diode devices after reverse-bias electrical stressing to breakdown has been investigated. All failed devices had irreversible structural damage, showing large surface craters that were ∼15–35 μm deep with lengthy surface cracks. Cross-sectional electron micrographs of failed devices showed substantial concentrations of threading dislocations around the cracks and near the crater surfaces. Progressive ion-milling across damaged devices revealed high densities of threading dislocations and the presence of voids beneath the surface cracks; these features were not observed in any unstressed devices. These results should serve as a useful reference for future reliability studies of vertical high-power GaN devices.

Peri, Prudhvi (ORCID:000000022338441X)↗
NASA NTRS2012

Nanotube Production Devices Expand Research Capabilities

In order for the Hubble Space Telescope to take incredible, never-seen-before shots of celestial bodies and then send them back to Earth, the spacecraft needs power. While in orbit, Hubble cannot plug into an electrical outlet or stop at a store for some batteries. One of the ways NASA supplies power aboard a spacecraft is by harnessing energy from the most powerful entity in the solar system: the Sun. Since the 1960s, photovoltaic technology, or technology that converts sunlight into electricity, has been instrumental in the exploration of space. To build upon existing photovoltaic technology, NASA s Glenn Research Center has worked on a variety of innovative designs and materials to incorporate into photovoltaic cells, the building blocks of solar power systems. One of these materials is the carbon nanotube - a tiny structure about 50,000 times finer than the average human hair, with notably high electrical and thermal conductivity and an extreme amount of mechanical strength. Such properties give carbon nanotubes great potential to enhance the reliability of power generation and storage devices in space and on Earth. Dennis J. Flood, the branch chief of the photovoltaic division at Glenn in the 1990s, was looking into using carbon nanotubes to improve the efficiency of solar cells when he ran into a major roadblock - high-quality carbon nanotubes were not readily available. To address this problem, one of the chemists in Flood s group came up with a process and system for growing them. A senior chemist at Glenn, Aloysius F. Hepp, devised an injection chemical vapor deposition process using a specific organometallic catalyst in a two-zone furnace. Hepp's group found the unique process produced high-quality carbon nanotubes with less than 5 percent metal impurity. In addition, the process was more efficient than existing techniques, as it eliminated pre-patterning of the substrate used for growing the nanotubes, a timely and cost-prohibitive step.

Source record↗
DOE OSTI2022

Excess noise in high-current diamond diodes

We report the results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by the 1/f and generation-recombination noise, which reveals itself as Lorentzian spectral features (f is the frequency). The generation-recombination bulges are characteristic of diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices—it scales as I 2 at the low (I < 10 μA) and high (I > 10 mA) currents and, rather unusually, remains nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, show a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with the increasing temperature. The obtained results are important for the development of noise spectroscopy-based approaches for device reliability assessment for high-power diamond electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

DC Microgrid Reliability Enhancement with Adaptive Converter Thermal Management

Due to the different device selections, aging levels, and thermal dissipation performance, some converters may take additional thermal stress on switching devices than others in paralleled converter systems, which will reduce system reliability. To address this problem, this paper proposes a power-sharing strategy with adaptive thermal management. First, the temperature-based power loss model and electrical-thermal model are established. Based on that, a high-accuracy IGBT junction temperature estimate considering the power loss-temperature coupling can be achieved. Further, the thermal-sharing for all the switching devices in paralleled converters can be achieved with the proposed adaptive thermal management strategy. The proposed strategy can change the power-sharing ratio adaptively according to the system operation conditions, which will contribute to the system reliability enhancement. The effectiveness of the proposed strategy is verified through PLECS thermal simulation and joint real-time simulation with Dspace and RT-box.

DC microgrid↗
DOE OSTI2021

Electric-Drive Vehicle Power Electronics Thermal Management: Current Status, Challenges, and Future Directions

Effective thermal management of traction-drive power electronics is critical to the advancement of electric-drive vehicles and is necessary for increasing power density and improving reliability. Replacing traditional silicon devices with more efficient, higher temperature, higher voltage, and higher frequency wide-bandgap (WBG) devices will enable increased power density but will result in higher device heat fluxes. Compact packaging of high-temperature WBG devices near low-temperature-rated components creates thermal management challenges that need to be addressed for future power-dense systems. This paper summarizes the thermal performance of on-road automotive power electronics thermal management systems and provides thermal performance and pumping-power metrics for select vehicles. Thermal analyses reveal that the package/conduction resistance dominates the total thermal resistance (for existing automotive systems). We model advanced packaging concepts and compare the results with existing packaging designs to quantify their thermal performance enhancements. Double-side-cooled configurations that do not use thermal interface materials are package concepts predicted to provide a low junction-to-fluid thermal resistance (compared to current packages). Dielectric-fluid-cooled concepts enable a redesign of the package to reduce the package resistance, can be implemented in single- and two-phase cooling approaches, and allow for cooling of passive components (e.g., capacitors) and bus bars.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability

We demonstrate the ability of a relatively new analytical technique, near-zero-field magnetoresistance (NZFMR), to track atomic-scale phenomena involved in the high-field stressing damage of fully processed Si metal-oxide-semiconductor field-effect transistors. We show that the technique is sensitive to both the Pb0 and Pb1 dangling bond centers and that the presence of both centers can be inferred through NZFMR via hyperfine interactions with the central 29Si atoms of the dangling bonds. The NZFMR results also provide evidence for the redistribution of mobile hydrogen atoms at the Si/SiO2 interface and also a potential change in the average dipolar coupling constant between electrons in neighboring defects. This work shows that NZFMR offers significant analytical power for studying technologically relevant semiconductor device reliability problems and has advantages in experimental simplicity over comparable techniques.

Moxim, Stephen J. (ORCID:0000000309659904)↗
DOE OSTI2021

Scenario adaptive disruption prediction study for next generation burning-plasma tokamaks

Next generation High Performance (HP) tokamaks risk damage from unmitigated disruptions at high current and power. Achieving reliable disruption prediction for a device's HP operation based on its Low Performance (LP) data is a key to its success. In this letter, through explorative data analysis and dedicated numerical experiments on multiple existing tokamaks, we demonstrate how the operational regimes of tokamaks can affect the power of a trained disruption predictor. First, our results suggest data-driven disruption predictors trained on abundant LP discharges work poorly on the HP regime of the same tokamak, which is a consequence of the distinct distributions of the tightly correlated signals related to disruptions in these two regimes. Second, we find that matching operational parameters among tokamaks strongly improves cross-machine accuracy which implies our model learns from the underlying scalings of dimensionless physics parameters like q 95 , β p and confirms the importance of these parameters in disruption physics and cross machine domain matching from the data-driven perspective. Finally, our results show in the absence of HP data from the target devices, the best predictivity of the HP regime for the target machine can be achieved by combining LP data from the target with HP data from other machines. Furthermore, these results provide a possible disruption predictor development strategy for next generation tokamaks, such as ITER and SPARC, and highlight the importance of developing baseline scenario discharges of future tokamaks on existing machines to collect more relevant disruptive data.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

We report on the growth of monoclinic β- and orthorhombic κ-phase Ga2O3 thin films using liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H-SiC substrates using gallium (III) acetylacetonate or tris(2,2,6,6-tetramethyl-3,5-heptanedionato) gallium (III). Both gallium precursors produced the β phase, while only the use of the latter led to growth of κ-Ga2O3. Regardless of the used precursor, best results for β-Ga2O3 were achieved at a growth temperature of 700 °C and O2 flows in the range of 600–800 SCCM. A relatively narrow growth window was found for κ-Ga2O3, and best results were achieved for growth temperatures of 600 °C and the O2 flow of 800 SCCM. While phase-pure β-Ga2O3 was prepared, κ-Ga2O3 showed various degrees of parasitic β phase inclusions. X-ray diffraction and transmission electron microscopy confirmed a highly textured structure of β- and κ-Ga2O3 layers resulting from the presence of multiple in-plane domain orientations. Thermal conductivities of 53 nm-thick β-Ga2O3 (2.13 + 0.29/−0.51 W/m K) and 45 nm-thick κ-Ga2O3 (1.23 + 0.22/−0.26 W/m K) were determined by transient thermoreflectance and implications for device applications were assessed. Presented results suggest great potential of heterointegration of Ga2O3 and SiC for improved thermal management and reliability of future Ga2O3-based high power devices.

Materials Science↗
NASA NTRS1984

Development of high frequency low weight power magnetics for aerospace power systems

A dominant design consideration in the development of space type power mangetic devices is the application of reliable thermal control methods to prevent device failure which is due to excessive temperature rises and hot temperatures in critical areas. The resultant design must also yield low weight, high efficiency, high reliability and maintainability, and long life. The weight savings and high efficiency that results by going to high frequency and unique thermal control techniques is demonstrated by the development of a 25 kVA, 20 kHz space type transformer under the power magnetics technology program. Work in the area of power rotary transformer is also discussed.

Schwarze, G. E.↗
NASA NTRS1984

Development of high frequency low weight power magnetics for aerospace power systems

A dominant design consideration in the development of space type power magnetic devices is the application of reliable thermal control methods to prevent device failure which is due to excessive temperature rises and hot temperatures in critical areas. The resultant design must also yield low weight, high efficiency, high reliability and maintainability, and long life. The weight savings and high efficiency that results by going to high frequency and unique thermal control techniques is demonstrated by the development of a 25 kVA, 20 kHz space type transformer under the power magnetics technology program. Work in the area of power rotary transformer is also discussed.

Schwarze, G. E.↗
NASA NTRS1977

Cyclic and low temperature effects on microcircuits

Cyclic temperature and low temperature operating life tests, and pre-/post-life device evaluations were used to determine the degrading effects of thermal environments on microcircuit reliability. Low power transistor-transistor-logic gates and linear devices were included in each test group. Device metallization systems included aluminum metallization/aluminum wire, aluminum metallization/gold wire, and gold metallization/gold wire. Fewer than 2% electrical failures were observed during the cyclic and low temperature life tests and the post-life evaluations revealed approximately 2% bond pull failures. Reconstruction of aluminum die metallization was observed in all devices and the severity of the reconstruction appeared to be directly related to the magnitude of the temperature excursion. All types of bonds except the gold/gold bonds were weakened by exposure to repeated cyclic temperature stress.

Weissflug, V. A.↗
DOE OSTI2023

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗
DOE OSTI2020

Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules: Preprint

Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for switching of high voltages and currents. Usage and environmental conditions can cause these power modules to degrade over time, and this gradual process may eventually lead to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization was performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment was aimed to assess the potential damage effects of thermal cycling on die attach, results indicated that wirebond degradation was the life limiting failure mechanism.

33 ADVANCED PROPULSION SYSTEMS↗
NASA NTRS2020

Particulate Sensor Technology Development at NASA Glenn Research Center

GRC has developed multiple innovative particulate sensor technologies for spacecraft cabin environmental monitoring, spacecraft fire safety, and lunar dust characterization. This has been driven by lack of commercial (COTS) devices to meet the volume, mass, power, reliability, and measurement requirements of any given application.

Fischer, David G.↗
DOE OSTI2020

Liquid-Cooled Heat Sink Optimization for Thermal Imbalance Mitigation in Wide-Bandgap Power Modules

Power semiconductor die layout in substrates used in power modules is generally optimized for minimum electrical parasitics (e.g., stray inductance) by considering the minimum spacing between dies for thermal decoupling. The layout assumes sufficient heat spreading and transfer from dies to the cooling structure. For module designs using a direct substrate cooling method, the base plate is removed, leading to a steady-state thermal asymmetry in the power module due to insufficient heat spreading/transfer. This causes significant temperature differences among the devices. Such unintentional thermal asymmetries can lead to undesirable asymmetries in power conversion among semiconductor devices, which impact reliability. This article proposes a thermal imbalance mitigation method that uses evolutionary optimized liquid-cooled heat sinks to improve the thermal loading among devices.

Sahu, Raj↗
NASA NTRSDate not supplied

Microgrid for Lunar Surface Power

Sustained lunar surface operations will require access to continuous and highly reliable power to support mission needs and an ability to evolve and grow over time (years). The first initial loads that arrive on the lunar surface will contain their own dedicated power sources. Over time, as the lunar surface operations and power demands grow, these individual power loads will require more power than can be generated with any single power device. This demand drives the need for inter-connecting loads and power devices to share power between them, resulting in a micro-grid. One advantage of developing a lunar surface micro-grid is that it will allow lunar surface operations to resemble electrical utility operations on Earth; it allows power to be generated where it is convenient and allows power to be consumed where it is convenient and required. The micro-grid concept also provides another benefit of affording the ability to increase overall system reliability by integrating dissimilar power generation and energy storage devices together, for example modifying the power generation strategy to include both solar arrays and nuclear. This talk provides an overview of NASA’s interest in developing a lunar microgrid and provides areas where external entities can play a role in developing futuristic power needs.

Jeffrey Csank↗