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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Synthesis and characterization of high-T(c) screen-printed Y-Ba-Cu-O films on alumina

Thick films of YBa2Cu3O(sub 7-x) have been deposited on highly polished alumina substrates by the screen printing technique. To optimize the post-printing heat treatment, the films were baked at various temperatures for different lengths of time and oxygen-annealed at a lower temperature. The resulting films were characterized by electrical resistivity measurements, X-ray diffraction, and optical and scanning electron microscopy. Properties of the films were found to be highly sensitive to the post-printing thermal treatment. Films baked for 15 min at 1000 C in oxygen were hard, adherent, near single phase, and superconducting with T(sub c) (onset) approx 96 KK, T(sub c) (zero) approx 66 K and Delta T sub c (10 to 90 percent) approx 10 K.

Bansal, Narottam P.↗
NASA NTRS1988

High Tc screen-printed YBa2Cu3O(7-x) films - Effect of the substrate material

Thick films of YBa2Cu3O(7-x) have been deposited on highly polished alumina, magnesia spinel, nickel aluminum titanate (Ni-Al-Ti), and barium tetratitanate (Ba-Ti) substrates by the screen printing technique. Properties of the films were found to be highly sensitive to the choice of the substrate material. The film on Ba-Ti turned green after firing, due to a reaction with the substrate and were insulating. A film on Ni-Al-Ti had a Tc (onset) of about 95 K and lost 90 percent of its resistance by about 75 K. However, even at 4 K it was not fully superconducting, possibly due to a reaction between the film and the substrate and interdiffusion of the reaction products. The film on alumina had Tc (onset) of about 96 K, Tc (zero) of about 66 K, and Delta Tc of about 10 K. The best film was obtained on spinel and had Tc (onset) of about 94 K, zero resistance at 81 K, and a transition width of about 7 K.

Bansal, Narottam P.↗
DOE OSTI2016

Communication—Improving Intermediate-Temperature Performance of a Screen-Printed LSCF Cathode with Infiltrated LSCF Nanoparticles

Here, the present study investigates the mass loading effect of an infiltrated La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ (LSCF) nanoparticles (NPs) catalyst on the area-specific polarization resistance (Rp) of a screen-printed porous LSCF cathode for solid oxide fuel cells. The results show that R p of the LSCF-NPs decorated LSCF cathode can be substantially reduced by as much as 89.3% after a single-step impregnation of 1.5 M nitrate solution containing La:Sr:Co:Fe = 0.6:0.4:0.2:0.8 with a mass loading of 3 wt%.

25 ENERGY STORAGE↗
DOE OSTI2020

Development of Low-Cost, Crack-Tolerant Metallization Using Screen Printing

One of the ways to reduce the cost of solar electricity to 3/kWh, thus reaching parity with fossil-fuel-based generation, is to reduce the degradation rate of solar modules and extend their lifetime well beyond 30 years. The extended module lifetime in turn can positively influence the financial model and the bankability of utility-scale PV projects. Today, the highest-riskpriority solar module degradation mechanism is what is known as hot spots, often induced by cell cracks. In order to address this degradation mechanism, we make use of low-cost, multi-walled carbon nanotubes embedded in commercial screen-printable silver pastes. When the carbon nanotubes are properly functionalized and appropriately incorporated into commercial silver pastes, the resulting metal contacts on solar cells, after screen-printing and firing, show exceptional fracture toughness. These composite metal contacts possess increased ductility, electrical gap-bridging capability up to 50 um, and 'self-healing' to regain electrical continuity even after cycles of complete electrical failure under extreme strain.

14 SOLAR ENERGY↗
DOE OSTI2022

Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation

The efficiency potential of double-side tunnel oxide passivated contact (DS-TOPCon) solar cells is limited by parasitic absorption in the front poly-Si layer, despite excellent passivation and high V OC . The use of patterned poly-Si only under the front metal grid lines can significantly reduce the parasitic absorption loss without sacrificing voltage. In this work, we demonstrate a simple, manufacturing-friendly method of patterning the front poly-Si using a nanosecond UV (355 nm) laser. We found that with laser powers ≥3 W at a 400 mm/s scan speed, an estimated 1–4 nm thick stoichiometric SiO 2 layer was grown on TOPCon. This served as a mask for KOH-etching of 200 nm poly-Si, allowing for patterning of poly-Si fingers required for selective TOPCon. While laser powers above 3 W caused substantial deterioration in passivation quality, the resulting damage in J 0 was largely recovered by subsequent PECVD SiN x deposition. At 3 W, the full area J 0 was found to be 36.8 fA·cm –2 . Furthermore, this translates to 1.68 fA·cm –2 for 4.48% coverage from the wing area of the polyfinger lines (100 lines–100 μm wide and 30 μm metal) contributing to a total front J 0 of ~10 fA·cm –2 , well suited for 25% efficient solar cells

42 ENGINEERING↗
DOE OSTI2024

Investigation of Local Parameters of PERC Solar Cells Metallized with Screen Printed Cu-Paste

For 40 TW of PV required to transition our planet to 100% renewables, the silver (Ag) should disappear from PV production. Advantages of copper (Cu) over silver (Ag) include: 1) bulk Cu has a similar conductivity to Ag (1.7 one millionth O-cm for Cu, 1.6 one millionth O-cm for Ag, and 2) Cu is -100 times cheaper than Ag, making it an excellent potential replacement. Problems associated with copper contacts include: 1) easy oxidation, and 2) diffusion into the Si cell and recombination activity. To summarize: 1) Rs map shows some regions with very high Rs, indicating no contact in those areas; 2) the histogram shows the peak Rs -5 ohm.cm2, which explains the high FF loss due to Rs; and 3) DLIT indicates non-uniformity in J01 and J02.

copper↗
DOE OSTI2017

High efficiency screen-printed n-type silicon solar cell using co-diffusion of APCVD boron emitter and POCl 3 back surface field

We present the fabrication and analysis of Passivated Emitter and Rear Totally Diffused (PERT) solar cells on n-type silicon using a co-diffusion process. In a single high temperature step, a BSG/SiO x stack deposited by APCVD and a POCl 3 back surface field diffuse into the wafer to form the boron doped emitter and phosphorus doped back surface field. The SiO x layer on top of BSG acts as a masking layer to prevent cross-doping of phosphorus as well as a blocking layer for boron out-diffusion. This resulted in an initial sheet resistance of 76 Ω with good uniformity and a final p + emitter sheet resistance of 97 Ω after boron rich layer removal. Additionally, bulk lifetime was investigated before and after the high temperature step that resulted in an increase from 1.2 ms to 1.5 ms due to a POCl 3 gettering effect. Finally, a peak cell efficiency of 20.3% was achieved and each recombination component in terms of saturation current density was calculated and analyzed to understand the cell for further efficiency enhancement.

14 SOLAR ENERGY↗
DOE OSTI2020

Quantitative Understanding and Implementation of Screen Printed p+ Poly-Si/Oxide Passivated Contact to Enhance the Efficiency of p-PERC Cells

This paper reports on the modeling, optimization and implementation of p-TOPCon (tunnel oxide passivated contacts) on the rear side of a PERC to enhance its efficiency. Local Al-BSF of a traditional PERC was replaced by p+ polySi/oxide passivated contact composed of ~15Å thick chemically grown tunnel oxide, capped with 120-250nm thick p+ poly-Si layer grown by LPCVD. Process optimization resulted in full area unmetallized saturated current density (Jo) of ~ 5fA/cm2 for planar surface, nearly independent of poly-Si thickness in the range. Metallized J0 showed an increase with decreased poly-Si thickness and was found to be 9.6 and ~25fA/cm2 for 250nm and 120 nm polySi, respectively, with 4.6% direct metal-Si contact fraction, suitable for bifacial cells. A 21.4% efficient baseline PERC cell with local BSF was fabricated and analyzed to extract the rear side saturation current density (J0b’) of 66fA/cm2. Model calculations showed that by replacing this local BSF with 250nm TopCon developed in the study showed some Voc enhancement of 7mV, consistent with the observed Voc increase of 10mV. Model calculations also reveal that a more advanced LBSF PERC with better bulk lifetime and emitter saturation current density can extends its potential gain up to 0.4% in cell efficiency from the integration of p-TOPCon.

14 SOLAR ENERGY↗
DOE OSTI2020

Quantitative Understanding and Implementation of Screen-printed p+ Poly-Si/Oxide Passivated Contact to Enhance the Efficiency of p-PERC Cells

Investigate the passivation quality of p-TOPCon to evaluate the promise and viability of upgraded p-PERC with p-TOPCon back. Model and simulate the p-PERC and p-TOPCon cells to predict the gain in cell efficiency by implementation of the p-TOPCon Develop a simple process sequence and fabricate p-TOPCon-PERC cell with ≥ 21.0% efficiency

p-TOPCon, P-PERC↗
DOE OSTI2025

Development of ~25% Efficient Double Side Screen Printed Poly-Si/SiO x Passivated Contact Solar Cells

This program aims to overcome these challenges and develop high-efficiency (24-25%) double-side (DS) TOPCon solar cells by maximizing passivation on both sides while mitigating light absorption losses. To achieve this, the program will implement either thin (≤ 20 nm) homogeneous n-TOPCon on the entire front surface or selective area thick (≥ 100 nm) n-TOPCon only underneath the front metal contact with ~90% field region composed of dielectric passivated textured n-Si in between the poly-Si/metal grid. The rear side will feature ~250 nm-thick full-area planar p-TOPCon, which functions as the rear junction. Recombination and parasitic absorption losses in the front and rear TOPCon layers will be minimized by tailoring their doping profiles and thickness. Additionally, the device performance will be further enhanced through the optimization of bulk parameters, including the carrier lifetime, resistivity, and thickness of the n-type Si absorber. Finally, advanced metallization techniques, such as fine-line printing, and floating busbar or busbar-less designs, will be employed to reduce recombination, resistive, and optical losses. The program started with the development of a technology roadmap for DS-TOPCon cells to achieve target efficiency.

14 SOLAR ENERGY↗
NASA NTRS1985

Mod silver metallization: Screen printing and ink-jet printing

Basic material efforts have proven to be very successful. Adherent and conductive films were achieved. A silver neodecanoate/bismuth 2-ethylhexanoate mixture has given the best results in both single and double layer applications. Another effort is continuing to examine the feasibility of applying metallo-organic deposition films by use of an ink jet printer. Direct line writing would result in a saving of process time and materials. So far, some well defined lines have been printed.

Vest, R. W.↗
NASA NTRSDate not supplied

Print-Consistency and Process-Interaction for Inkjet-Printed Copper on Flexible Substrate

Printed electronics is a fastest growing and emerging technology that have shown much potential in several industries including automotive, wearables, healthcare, and aerospace. Its applications can be found not only in flexible but also in large area electronics. The technology provides an effective and convenient method to additively deposit conductive and insulating materials on any type of substrate. Comparing with traditional manufacturing processes, which involves chemical etching, this technology also comes to be relatively environmental friendly. Despite its status, it is not without its challenges. Starting from the material being compatible in the printer equipment to the point of achieving fine resolutions, and with excellent properties are some of the challenges that printed electronics face. Among the myriad of printing technologies such as Aerosol Jet, micro-dispensing, gravure printing, screen printing, Inkjet printing, Inkjet has gained much attention due to its low-cost, low material consumption, and roll-to-roll capability for mass manufacturing. The technology has been widely used in home and office, but recently gained interest in printed electronics in a research and development setting. Conductive materials used in Inkjet printing generally comprises of metal Nanoparticles that need to be thermally sintered for it to be conductive. The preferred metal of choice has been mostly silver due to its excellent electrical properties and ease in sintering. However, silver comes to be expensive than its counterpart copper. Since copper is prone to oxidation, much focus has been given towards photonic sintering that involves sudden burst of pulsed light at certain energy to sinter the copper Nanoparticles. With this technique, only the printed material gets sintered in a matter of seconds without having a great impact on its substrate, due to which it is also preferred in low temperature applications. With all the knowledge, there is still a large gap in the process side with copper where it is important to look how the print process affects the resolution of the print along with the effect of post-print processes on electrical and mechanical properties. In this paper, a copper Inkjet ink is utilized for understanding the effect of Inkjet print parameters on the ejected droplet and its resolution. Post-print process is also quantified using a photonic sintering equipment for excellent electrical and mechanical properties. To demonstrate the complete process, commercial-off-the-shelf components will also be mounted on the additively printed pads via Inkjet. Statistically, control charting technique will be utilized to understand the capability of the Inkjet process.

printed electronics↗
DOE OSTI2015

Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m{sup -2}.K{sup -1} and 130 μC.N{sup -1} for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in order to investigate their reliability towards neutron fluence. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2021

Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report)

The overall objective of this program is to achieve ~23% bifacial n-type cell efficiencies by developing and implementing optimized homogeneous or selective boron (B) emitter on front and tunnel oxide passivated contact (TOPCon) on rear side, in combination with advanced fine-line screen-printing metallization with floating busbars. During this research project, first we developed a technology roadmap to drive the 21% n-PERT cell efficiency from 21% to 23% by transforming the cell design to n-TOPCon and establishing the requirements for each layer, including B emitter, rear n-TOPCon, n-base Si and screen-printed contacts. Next, consistent with our roadmap, we developed advanced homogeneous implanted B emitter (150-180 Ω/⌫) passivated with ALD Al 2 O 3 layer capped with PECVD SiN x /SiO x double-layer antireflection coating This gave a very low recombination current density of 10-15 fA/cm 2 prior to metallization. In addition, we demonstrated metallized recombination current density of ~31 fA/cm 2 for this advanced homogeneous B emitter with industrial screen-printed, fire-through contacts with 40 μm wide grid lines, floating busbars and implementation of an advanced Ag-Al paste which resulted in local or reduced area metal-Si contact under the grid lines with virtually no emitter surface etching. This paste reduced the full area metallized J oe,metal from >1100 fA/cm 2 to ~700 fA/cm 2 . We also developed novel processes for the formation of p + /p ++ selective B emitter by a) single B diffusion with selective etch back and b) two-steps diffusion with implanted B in field region and APCVD B diffusion under the metal grid. We achieved very low un-metallized recombination current density (J 0 ) of ~18 fA/cm 2 for the selective p ++ p + emitters (30/150 Ω/⌫) and metallized J 0 of ~28 fA/cm 2 with ~3% screen-printed metal contact to p ++ regions. Next, we developed the technology for n-TOPCon by growing phosphorus-doped LPCVD and PECVD poly-Si on top of ~ 15Å chemically grown (NAO) tunnel oxide. After an optimized anneal at 875 °C for 30 min, passivated n-TOPCon have unmetallized J 0 of ~ 5 fA/cm 2 which went down further to ~ 1 fA/cm 2 after a 700 Å SiN x capping layer and simulated contact firing cycle at 770 °C. After screen-printed fire-through metallization on this n-TOPCon with ~13% metal coverage, metallized J 0 value increased to only ~5 fA/cm 2 which is among the lowest reported value to the best of our knowledge for screen-printed metallization. Finally, we integrated all the above technology innovations and enhancements and demonstrated low-cost manufacturable screen-printed n-TOPCon bifacial Si solar cell with ~23% efficiencies. Based on the experimental and theoretical understanding developed in this project, we have developed a new technology roadmap that shows that implementation of busbarless contacts, 10-20 ms bulk lifetime Si, and selective B emitter or selective TOPCon on the front can drive ~23% efficient cells achieved in this research to ~25% at low-cost.

14 SOLAR ENERGY↗
DOE OSTI2022

A Reactive Inkjet Printing Process for Fabricating Biodegradable Conductive Zinc Structures

A novel reactive inkjet printing (RIJ) process for fabricating environmentally benign, conductive zinc structures on biodegradable substrates is reported. A precursor consisting of oxidized zinc microparticles is formulated into a viscous ink for high‐resolution, high‐repeatability screen printing. A single RIJ process is performed to selectively dispense an acid‐based oxide etching agent onto the screen‐printed zinc ink to significantly improve its electrical conductivity, up to 4 × 10 4 S m −1 . The RIJ process enables precise control of the amount of deposited etching agent, allowing control of conductivity and avoiding damage caused by excessive acid exposure. The RIJ process deposits the etching agent selectively on the screen‐printed, water‐soluble zinc patterns, thus preserving the print fidelity by avoiding ink smearing that can occur when using a blanket treatment such as submersion. A printed biodegradable antenna with a minimum feature size of 500 μm for use with a batteryless radio frequency identification (RFID) chip is fabricated as demonstration. Due to the higher ink conductivity and improved pattern fidelity, the antenna fabricated by the RIJ process shows a ≈2.2× increase in reading distance compared with a similar antenna that is screen printed and activated using a drop‐casting process.

Sui, Yongkun↗
NASA NTRS1980

Coplanar back contacts for thin silicon solar cells

A process for fabricating 2 to 3 mil wraparound solar cells was formulated. Sample thin wraparound cells were fabricated using this process. The process used a reinforced perimeter construction to reduce the breakage that occurs during handling of the wafers. A retracting piston post was designed and fabricated to help minimize the breakage that occurs during the screen printing process. Two alternative methods of applying the aluminum back surface field were investigated. In addition to the standard screen printed back surface field, both spin-on and evaporated aluminum techniques were researched. Neither spin-on nor evaporated aluminum made any noticeable improvement over the screen printing technique. A fine screen mesh was chosen for the application of the aluminum paste back surface field. The optimum time and temperature for firing the aluminum turned out to be thirty seconds at 850 C. The development work on the dielectric included looking at three dielectrics for the wraparound application. Transene 1000, Thick Film Systems 1126RCB and an in house formulation 61-2-2A were all tested. Cells with pre-dielectric thickness of 3.0-0-3.5 mils using Transene 1000 as the wraparound dielectric and the procedure outlined above showed an average efficiency of 10.7 percent. Thinner cells were fabricated, but had an unacceptable yield and efficiency.

Thornhill, J. W.↗