Search NASA⌕ Search

SEARCH · Search NASA

Results for “SWITCHING ELEMENT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Power processor for a 20CM ion thruster

A power processor breadboard for the JPL 20CM Ion Engine was designed, fabricated, and tested to determine compliance with the electrical specification. The power processor breadboard used the silicon-controlled rectifier (SCR) series resonant inverter as the basic power stage to process all the power to the ion engine. The breadboard power processor was integrated with the JPL 20CM ion engine and complete testing was performed. The integration tests were performed without any silicon-controlled rectifier failure. This demonstrated the ruggedness of the series resonant inverter in protecting the switching elements during arcing in the ion engine. A method of fault clearing the ion engine and returning back to normal operation without elaborate sequencing and timing control logic was evolved. In this method, the main vaporizer was turned off and the discharge current limit was reduced when an overload existed on the screen/accelerator supply. After the high voltage returned to normal, both the main vaporizer and the discharge were returned to normal.

Biess, J. J.↗
NASA NTRS1976

Solid state remote power controllers for 120 VDC power systems

Remote Power controllers (RPCs) are devices that combine in one unit the capability to perform all the needed functions of load switching and provide total system protection of equipment and wires. The unique developments of solid-state RPCs for 120 Vdc power distribution systems are reviewed. The discussion covers design guidelines, power switch design concepts, and performance effectiveness. An NPN transistor is used as the the basic switch element. Since the ultimate goal of the 120 Vdc RPC program is to demonstrate technology readiness, the final phase is directed to the design, fabrication, and testing of multi-chip hybrid prototypes in hermetically sealed packages. RPCs have potential application in spacecraft and aircraft electrical systems, in transportation systems, and various industrial applications. The upper voltage limitation on the RPC design is related to the capability and availability of suitable high-voltage power transistors. The merits of solid-state RPCs are noted.

Sundberg, G. R.↗
NASA NTRS1977

Electro-optically-indexed microwave switch

Mechanical parts used in conventional switches to index stepper motor that drives switch elements are replaced by optoelectronic indexing device that controls magnetic-detent motor. Unit eliminates major source of wear and maintains detent accuracy longer. Design of device achieves reduction of insertion loss, crosstalk, and wave guide reflections when receiving and transmitting.

Neff, D. E.↗
NASA NTRS1978

IC implementation of crossbar switches

Basic switching-element configuration can be expanded to more complex networks by coupling basic building blocks in appropriate way. In all cases, binary addressing of input and output ports is used.

Anderson, T. O.↗
NASA NTRS1983

The 30-GHz monolithic receive module

Key requirements for a 30 GHz GaAs monolithic receive module for spaceborne communication antenna feed array applications include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five-bit phase shifter, and a maximum power consumption of 250 mW. The RF designs for each of the four submodules (low noise amplifier, some gain control, phase shifter, and RF to IF sub-module) are presented. Except for the phase shifter, high frequency, low noise FETs with sub-half micron gate lengths are employed in the submodules. For the gain control, a two stage dual gate FET amplifier is used. The phase shifter is of the passive switched line type and consists of 5-bits. It uses relatively large gate width FETs (with zero drain to source bias) as the switching elements. A 20 GHz local oscillator buffer amplifier, a FET compatible balanced mixer, and a 5-8 GHz IF amplifier constitute the RF/IF sub-module. Phase shifter fabrication using ion implantation and a self-aligned gate technique is described. Preliminary RF results obtained on such phase shifters are included.

Sokolov, V.↗
NASA NTRS1985

Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

Lee, F. C.↗
NASA NTRS1987

Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

Thakoor, A. P.↗
NASA NTRS1989

Memory Switches Based On MnO2-x Thin Films

Thin films of Mn02-x at intersections between metallic row and column conductors serve as switching elements for nonvolatile electronic memories. "On"-state resistance adjustable, and on-to-off transition irreversible. Elements electrically programmable and especially suitable for use in associative electronic memories based on neural-network concepts.

Ramesham, Rajeshuni↗
NASA NTRS1990

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗
NASA NTRS1991

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors, the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗
NASA NTRS1995

Architecture and performance analysis of DIRSMIN: A fault-tolerant switch using dilated reduced-stage MIN

We develop and analyze a dilated high performance fault tolerant fast packet multistage interconnection network (MIN) in this paper. In this new design, the links at the input and the output stages of a dilated banyan-based MIN are rearranged to create multiple routes for each source-destination pair in the network after removing one stage in the network. These multiple paths are link- and node-disjoint. Fault tolerance at low latency is achieved by sending multiple copies of each input packet simultaneously using different routes and different priorities. This guarantees that high throughput is maintained even in the presence of faults. Throughput is analyzed using simulation and analysis and we show that the new design has considerably higher performance in the presence of a faulty switching element (SE) or link in comparison to dilated networks. We also analyze the reliability and show that the new design has superior reliability in comparison to competing proposals.

Somani, Arun K.↗
NASA NTRS1987

Gigarad-tolerant power switches and memory elements

A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.

Joyner, W. T.↗
NASA NTRS2006

Smectic A Filled Birefringent Elements and Fast Switching Twisted Dual Frequency Nematic Cells Used for Digital Light Deflection

We describe the application of smectic A (SmA) liquid crystals for beam deflection. SmA materials can be used in digital beam deflectors (DBDs) as fillers for passive birefringent prisms. SmA prisms have high birefringence and can be constructed in a variety of shapes, including single prisms and prismatic blazed gratings of different angles and profiles. We address the challenges of uniform alignment of SmA, such as elimination of focal conic domains. Fast rotation of the incident light polarization in DBDs is achieved by an electrically switched 90 twisted nematic (TN) cell.

Pishnyak, Oleg↗
NASA NTRS1982

Integrating 128 element InSb array - Recent results

There has been a continuing evolution toward larger arrays of infrared detectors, and the technology base derived from the Galileo Near Infrared Mapping Spectrometer (NIMS) has been expanded to linear arrays including from 128 to 512 elements. This advance is based on the commercial availability of high-quality InSb photodiodes and 128/256 element FET switch MUX's (multiplexing elements). The present investigation is concerned with an experimental 128-element linear imager using InSb detectors and silicon MUX for readout. Attention is given to detector array electrical characteristics, the detector readout architecture, noise, and special effects.

Bailey, G.↗
NASA NTRS1983

Automatic thermal switch

An automatic thermal switch to control heat flow includes two thermally conductive plates and a thermally conductive switch saddle pivotally mounted to the first plate. A flexible heat carrier is connected between the switch saddle and the second plate. A phase-change power unit, including a piston coupled to the switch saddle, is in thermal contact with the first thermally conductive plate. A biasing element biases the switch saddle in a predetermined position with respect to the first plate. When the phase-change power unit is actuated by an increase in heat transmitted through the first place, the piston extends and causes the switch saddle to pivot, thereby varying the thermal conduction between the two plates through the switch saddle and flexible heat carrier. The biasing element, switch saddle, and piston can be arranged to provide either a normally closed or normally opened thermally conductive path between the two plates.

Cunningham, J. W.↗
NASA NTRS1975

System consideration, design approach and test of a low gain spherical coverage antenna for large space vehicles

A fixed beam array antenna approach is proposed to meet the omnidirectional receiving and transmitting requirements of LST (Large Space Telescope). The proposed method uses an antenna of known performance and scales the size and frequency to conform with the LST 1/5-th scale model. The simplification that the approach provides over switching antenna elements on board the LST or switching from the ground by frequency diversity makes it worthy of consideration against the factors of performance, cost, reliability, and operations complexity. For LST applications, the system capabilities, requirements, and margins are summarized. The areas to be covered by further investigations into the proposed LST antenna are noted.

Ferguson, R. E.↗
NASA NTRS1970

Constant-voltage drive current-steering switch

Two-element voltage control system regulates a magnetic switch consisting of dual ferrite-core shift registers. The system has a magnetic, two-core-per-bit, voltage-controlled shift register.

Caplette, R. K.↗