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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Preliminary Quantification of Image Color Gradient on Genesis Concentrator Silicon Carbine Target 60001

The Genesis spacecraft concentrator was a device to focus solar wind ions onto a 6-cm diameter target area, thus concentrating the solar wind by 20X [1]. The target area was comprised of 4 quadrants held in place by a gold-coated stainless steel "cross" (Fig. 1). To date, two SiC and one chemical vapor deposited (CVD) quadrants have been imaged at 5X using a Leica DM-6000M in autoscan mode. Complete imaging of SiC sample 60001 required 1036 images. The mosaic of images is shown in Fig. 2 and position of analyzed areas in Fig. 3. This mosaic imaging is part of the curatorial documentation of surface condition and mapping of contamination. Higher magnification (50X) images of selected areas of the target and individual contaminant particles are compiled into reports which may be requested from the Genesis Curator [2].

Allton, J. H.↗
NASA NTRS2009

Structure for implementation of back-illuminated CMOS or CCD imagers

A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

Pain, Bedabrata↗
NASA NTRS1985

EBIC Characterization and Hydrogen Passivation in Silicon Sheet

As a general qualitative tool, the electron beam induced current (EBIC) method can be very useful in imaging recombination in silicon sheet used for solar cells. Work using EBIC on EFG silicon ribbon is described. In particular, some efforts at making the technique more quantitative and hence more useful, some limitations of the method, and finally specific application to hydrogen passivation is treated. Some brief remarks are made regarding the technique itself.

Hanoka, J. I.↗
NASA NTRS2008

Real-Time Digital Radiography Upgrade

The objective of the task is to upgrade an existing real-time digital radiography system by replacing an aged image intensifier tube with an amorphous silicon digital x-ray imager. The real-time digital radiography system at GSFC is currently fitted with image intensifier tube with a 4 or 2 inch diameter active area with higher resolution at the smaller area. The image intensifier is exhibiting deterioration in sensitivity associated with extended use and is in need of replacement.

Parker, Bradford H.↗
NASA NTRS2002

Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

Hwang, Helen H.↗
NASA NTRS1971

A multispectral image sensor array.

A silicon monolithic multispectral photosensor device is described. Fabrication techniques and preliminary spectral response data are presented. The device is designed to meet small size and weight requirements and to impose a reduced load upon cooling systems in use on satellites.

Gerhard, G. C.↗
NASA NTRS1987

Flaw imaging and ultrasonic techniques for characterizing sintered silicon carbide

The capabilities were investigated of projection microfocus x-radiography, ultrasonic velocity and attenuation, and reflection scanning acoustic microscopy for characterizing silicon carbide specimens. Silicon carbide batches covered a range of densities and different microstructural characteristics. Room temperature, four point flexural strength tests were conducted. Fractography was used to identify types, sizes, and locations of fracture origins. Fracture toughness values were calculated from fracture strength and flaw characterization data. Detection capabilities of radiography and acoustic microscopy for fracture-causing flaws were evaluated. Applicability of ultrasonics for verifying material strength and toughness was examined.

Baaklini, George Y.↗
NASA NTRS1992

Software Operates On Bit-Map Images

PIXTOOLS is software for Silicon Graphics IRIS consisting of thirteen programs plus library for operating on bit-map images. Enables user to create, edit, and save high-resolution images in forms in which displayed on video screens, resize them, and capture them. Eleven programs print information and read and write files. Two offer graphical interfaces. Menus enable manipulation of images and background color and saving of an image screen to file. Written in C.

Choi, Diana↗
NASA NTRS1977

Photometric imaging of Mars during the 1973 opposition

The paper discusses imaging of Mars at 20 wavelengths in the spectral region from 0.35 to 1.10 microns performed during the 1973 opposition with a photometric imaging system that uses a silicon vidicon tube as the detector. The imaging system and data-reduction procedures are described in detail, and relative reflectance spectra for several small areas in the images are presented along with vidicon images obtained during early phases in the development of the 1973 dust storms. Several anomalous blue brightenings are examined and attributed to ground fog and H2O frost. It is suggested that anomalously large amounts of H2O were pulsed into the atmosphere from the regolith by the storm system. An apparent fading and recession of the north polar hood is noted, surface units revealed in contrast-enhanced ratio images are identified, and the need for higher-spatial-resolution orbital spectroscopy of dark areas is emphasized.

Mccord, T. B.↗
NASA NTRS1975

Development and test of video systems for airborne surveillance of oil spills

Five video systems - potentially useful for airborne surveillance of oil spills - were developed, flight tested, and evaluated. The systems are: (1) conventional black and white TV, (2) conventional TV with false color, (3) differential TV, (4) prototype Lunar Surface TV, and (5) field sequential TV. Wavelength and polarization filtering were utilized in all systems. Greatly enhanced detection of oil spills, relative to that possible with the unaided eye, was achieved. The most practical video system is a conventional TV camera with silicon-diode-array image tube, filtered with a Corning 7-54 filter and a polarizer oriented with its principal axis in the horizontal direction. Best contrast between oil and water was achieved when winds and sea states were low. The minimum detectable oil film thickness was about 0.1 micrometer.

Millard, J. P.↗
NASA NTRS1977

Photo sensor array technology development

The development of an improved capability photo sensor array imager for use in a Viking '75 type facsimile camera is presented. This imager consists of silicon photodiodes and lead sulfide detectors to cover a spectral range from 0.4 to 2.7 microns. An optical design specifying filter configurations and convergence angles is described. Three electronics design approaches: AC-chopped light, DC-dual detector, and DC-single detector, are investigated. Experimental and calculated results are compared whenever possible using breadboard testing and tolerance analysis techniques. Results show that any design used must be forgiving of the relative instability of lead sulfide detectors. A final design using lead sulfide detectors and associated electronics is implemented by fabrication of a hybrid prototype device. Test results of this device show a good agreement with calculated values.

Rossman, M. W.↗
NASA NTRS1984

The future scientific CCD

Since the first introduction of charge-coupled devices (CCDs) in 1970, CCDs have been considered for applications related to memories, logic circuits, and the detection of visible radiation. It is pointed out, however, that the mass market orientation of CCD development has left largely untapped the enormous potential of these devices for advanced scientific instrumentation. The present paper has, therefore, the objective to introduce the CCD characteristics to the scientific community, taking into account prospects for further improvement. Attention is given to evaluation criteria, a summary of current CCDs, CCD performance characteristics, absolute calibration tools, quantum efficiency, aspects of charge collection, charge transfer efficiency, read noise, and predictions regarding the characteristics of the next generation of silicon scientific CCD imagers.

Janesick, J. R.↗
NASA NTRS2002

Silicon Lightweight Mirrors (SLMS) for Ultraviolet and Extreme Ultraviolet Imaging Mirrors

Subtopic 01-S1.06 requires mirrors with a diameter of 0.5-2.4 meters, areal density less than 20 kg/sq m, a figure specification of 0.02-0.005 waves root mean square (rms) at 633 nanometers, a surface roughness 0.5-1 nanometers rms, and a midfrequency error of 1.0-2.5 nanometers rms for use in the infrared (IR) to extreme ultra violet (EUV) waveband. Schafer's Phase II objective is to use Silicon Lightweight Mirrors (SLMS), a novel, all-silicon, foam-core, lightweight mirror technology, to build three imaging mirrors for the Next Generation Space Telescope Near Infrared Camera (NIRCam) Engineering Test Unit: M0 (a flat), M2 (a concave sphere) and M3R (an oblate spheroid). The surface figure error specification for the NIRCam imaging mirrors is 8 nanometers rms (0.013 waves rms at 633 nanometers), equivalent to that required for ultraviolet (UV) and EUV mirrors, and this figure must be maintained at the 35 K operational temperature of NGST. The surface roughness required is 30 A rms since NIRCam operates in the visible to infrared (VIS/IR) (0.65-5 microns). We will produce mounts for mirrors M2 and M3R using the complementary thermally matched C/SiC material demonstrated by Schafer under another NASA SBIR, NAS8-98137.

Goodman, W. A.↗
NASA NTRS1975

Silicon solid/state linear arrays for multispectral high resolution imaging systems

Solid-state, electronically scanned, linear detector arrays are now available which can be used in a pushbroom scan mode imaging system for high-resolution multispectral earth resource survey applications. These arrays provide high performance in the visible to near-IR region. Two performance criteria must be assessed in the choice of a detector array: signal-to-noise ratio and spectral response. Consideration of diffraction limitations shows that optics size cannot be significantly reduced by using very low-noise detectors. The required spectral response for a viable detector array should not have spectral ripples that cause a low-level, but significant, error in the detected effective reflectance of the target.

Thompson, L. L.↗
NASA NTRS1972

Solid state image sensing arrays

The fabrication of a photodiode transistor image sensor array in silicon, and tests on individual elements of the array are described along with design for a scanning system for an image sensor array. The spectral response of p-n junctions was used as a technique for studying the optical-absorption edge in silicon. Heterojunction structures of Sb2S3- Si were fabricated and a system for measuring C-V curves on MOS structures was built.

Sadasiv, G.↗