Search NASA⌕ Search

SEARCH · Search NASA

Results for “Silicon imager”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Deep learning-based segmentation of lithium-ion battery microstructures enhanced by artificially generated electrodes

Accurate 3D representations of lithium-ion battery electrodes, in which the active particles, binder and pore phases are distinguished and labeled, can assist in understanding and ultimately improving battery performance. Here, we demonstrate a methodology for using deep-learning tools to achieve reliable segmentations of volumetric images of electrodes on which standard segmentation approaches fail due to insufficient contrast. We implement the 3D U-Net architecture for segmentation, and, to overcome the limitations of training data obtained experimentally through imaging, we show how synthetic learning data, consisting of realistic artificial electrode structures and their tomographic reconstructions, can be generated and used to enhance network performance. We apply our method to segment x-ray tomographic microscopy images of graphite-silicon composite electrodes and show it is accurate across standard metrics. We then apply it to obtain a statistically meaningful analysis of the microstructural evolution of the carbon-black and binder domain during battery operation.

25 ENERGY STORAGE↗
DOE OSTI2020

Toward ultrafast, ultra-stable imaging arrays: Superlattice doping to enhance the performance of backside-illuminated 3D-hybridized silicon photodetectors

In this paper, the authors report the latest results on their development of superlattice-doped, thinned, backside-illuminated (BSI), 3D-integrated photodiode detectors—a step toward their ultimate goal of demonstrating ultrafast, ultrastable CMOS imaging arrays. As with most silicon-based photodetectors, backside-illumination and backside surface passivation are keys to achieve the highest performance capability. The two-dimensional (2D) doping technique developed at the Jet Propulsion Laboratory (JPL) has proved to result in a highly efficient, highly stable detector response when combined with a variety of detectors. Here, JPL's 2D-doping has been combined with Sandia's BSI photodetectors hybridized with custom fanout wafer via copper Direct Bond Interconnect (DBI®), a technology that is rapidly becoming industry standard for BSI CMOS imaging arrays. The prototype detectors were packaged and evaluated with respect to their response to low energy electrons. The authors find that the responsivity of 2D-doped BSI detectors is higher than devices prepared using other surface passivation techniques (i.e., ion implantation). The success of the work described herein verifies that the 2D-doping processes previously developed for Sandia's frontside-illuminated photodetectors are generally applicable to BSI detectors and demonstrates for the first time that JPL's 2D-doping process is compatible with the Cu-DBI® technology.

Jewell, April D.↗
DOE OSTI2025

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. Here, the detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241 Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ~ 1.5 x 10 12 α cm –2 . Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6 x 10 12 α cm –2 cm.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Structural and optical properties of nanoparticles formed by laser ablation of porous silicon in liquids: Perspectives in biophotonics

The paper discusses the possibility of manufacturing silicon nanoparticles, which are suitable for contrasting biological tissues imaged by optical coherence tomography, by femtosecond laser ablation of porous silicon in various liquids. The manufactured nanoparticles are characterised by average sizes of 87, 112, and 102 nm for cases of ablation in water, ethanol, and liquid nitrogen, respectively, as well as a relatively narrow size distribution, which provides additional advantages for subsequent delivery into biological tissues. Electrochemical etching, which results in the formation of layers of porous silicon, allows the yield of ablation products to be increased several-fold by lowering the ablation threshold, thereby increasing the light scattering efficiency of the prepared suspensions compared with the case of using crystalline silicon as targets. The possibility of obtaining high-contrast images of a biotissue phantom based on an agar gel with embedded nanoparticles is shown. The magnitude of the contrast depends on the liquid used for ablation and correlates with the values of the reduced scattering coefficient of the studied suspensions. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Integrated photonic encoder for low power and high-speed image processing

Abstract Modern lens designs are capable of resolving greater than 10 gigapixels, while advances in camera frame-rate and hyperspectral imaging have made data acquisition rates of Terapixel/second a real possibility. The main bottlenecks preventing such high data-rate systems are power consumption and data storage. In this work, we show that analog photonic encoders could address this challenge, enabling high-speed image compression using orders-of-magnitude lower power than digital electronics. Our approach relies on a silicon-photonics front-end to compress raw image data, foregoing energy-intensive image conditioning and reducing data storage requirements. The compression scheme uses a passive disordered photonic structure to perform kernel-type random projections of the raw image data with minimal power consumption and low latency. A back-end neural network can then reconstruct the original images with structural similarity exceeding 90%. This scheme has the potential to process data streams exceeding Terapixel/second using less than 100 fJ/pixel, providing a path to ultra-high-resolution data and image acquisition systems.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Photon-to-Digital Converters for Neutron Imaging Instruments (Final Report)

Oak Ridge National Laboratory (ORNL) collaborated with the Université de Sherbrooke (UdeS) to design a modular and scalable tile of innovative digital photodetectors called Photon-to-Digital Converters (PDC) and the required subsystems to demonstrate the feasibility of large area single-photon detectors to support high-resolution, depth-of-interaction, fast neutron radiography based on scintillation detectors. The goal is to demonstrate the advantages of using PDC over conventional Silicon Photomultiplier (SiPM) for neutron imaging systems. The basic building blocks of analog SiPM and PDC are Single-Photon Avalanche Photodiodes (SPAD). The main difference between conventional SiPMs and PDCs, is in the fact that analog SiPMs sum the charge produced by individual SPAD passively, while in PDCs each SPAD is read out individually by an active electronic circuit. Hence, PDCs provide a direct photon-to-bit conversion where a logic “1” means that there was a detection in a given SPAD. Conversely, an analog SiPM requires a sophisticated preamplifier (current amplifiers or transimpedance amplifier) followed by a shaping amplifier and an analog-to-digital converter. Moreover, since the charge from each SPAD varies slightly, the passive sum of the analog SiPM will have signal fluctuations for the same amount of photon detected. This is one of many issues that is completely eliminated by individual one-to-one SPAD read out in PDCs. The large area required for scintillator readouts for neutron imaging is such that the output capacitance of a large area of SiPM arrays is very high. This creates a burden on the signal-to-noise optimization with respect to the power budget. For PDC, the power consumption is dictated by rate of the incident photon flux, or in photon-starved environments, the dark noise rate of the SPAD array. In other words, the power consumption in the absence of events is extremely low. Hence, the power consumption of a PDC read out system is much lower than its analog counterpart. Further, the large SiPM capacitance may introduce signal distortions on the scintillator fast rise or decay time with undesired effects on timing and pulse shape discrimination. The problem is absent in PDCs, as their readout is independent on device capacitance. UdeS is the world leader in 3D vertical integration of frontside illuminated SPAD arrays over CMOS readouts. These capabilities allow future production of “3D PDC” with maximum photosensitive fill factor and electronic functionalities tailored to the application. UdeS' vast knowledge of SPADs and CMOS design made the team an ideal collaborator in the development of large area high-resolution fast neutron radiography.

42 ENGINEERING↗
DOE OSTI2020

Tip-Enhanced Raman Nanospectroscopy of Smooth Spherical Gold Nanoparticles

We record nanoscale-resolved chemical images of thiobenzonitrile (TBN)-functionalized smooth gold nanospheres on silicon via tip-enhanced Raman (TER) nano-spectroscopy. The recorded images trace the nascence of the familiar doughnut-shaped scattering profile of nanoparticles on silicon at its origin (the particle surface), which appears as a horseshoe-shaped scattering pattern under our experimental conditions. The local optical field maps are in agreement with their simulated finite-difference time-domain analogues. Analysis of the recorded spectra with the aid of ab initio molecular dynamics-based Raman spectral simulations further suggests that optical rectification and molecular charging take place throughout the course of atomic force microscopy-based TER nanoscale chemical imaging.

Bhattarai, Ashish↗
DOE OSTI2020

Soft x-ray detection for small satellites with a commercial CMOS sensor at room temperature

Recently CMOS (complementary metal-oxide-semiconductor) sensors have progressed to a point where they may offer improved performance in imaging x-ray detection compared to the CCDs often used in x-ray satellites. We demonstrate x-ray detection in the soft x-ray band (250-1700 eV) by a commercially available back-illuminated Sony IMX290LLR CMOS sensor using the Advanced Photon Source at the Argonne National Laboratory. Additionally, while operating the device at room temperature, we measure energy resolutions (FWHM) of 47 eV at 250 eV and and 77 eV 1700 eV which are comparable to the performance of the Chandra ACIS and the Suzaku XIS. Furthermore, we demonstrate that the IMX290LLR can withstand radiation up to 17.1 krad, making it suitable for use on spacecraft in low earth orbit.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Experimental setup for high-resolution characterization of crystal optics for coherent X-ray beam applications

Stanford Synchrotron Radiation Lightsource serves a wide scientific community with its variety of X-ray capabilities. Recently, a wiggler X-ray source located at beamline 10-2 has been employed to perform high-resolution rocking curve imaging (RCI) of diamond and silicon crystals. X-ray RCI is invaluable for the development of upcoming cavity-based X-ray sources at SLAC, including the cavity-based X-ray free-electron laser and X-ray laser oscillator. In this paper, the RCI apparatus is described and experimental results are provided to validate its design. Future improvements of the setup are also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Neutron Imaging Using Organic Glass Scintillators

In this work, we develop of a compact neutron imaging system based on organic glass scintillator and silicon photomultiplier arrays. The recently developed organic glass scintillator has excellent neutron and gamma-ray detection efficiency and exhibits pulse shape discrimination capability that is nearly as good as current state-of-the-art materials such as trans-stilbene. We have cast and characterized 6 mm by 6 mm by 50 mm bars of organic glass in our laboratory. When coupled to a silicon photomultiplier array, these bars demonstrated better energy and timing resolution than the stilbene organic scintillator. Here, this performance makes organic glass an ideal material for a compact neutron imaging system, which must resolve neutron scatter events on a sub-nanosecond time scale. We have demonstrated neutron imaging with bars of organic glass scintillator coupled to arrays of silicon photomultipliers. Additional bars of organic glass will be implemented into the system to improve the efficiency and imaging performance. The resulting system will be demonstrated using 252 Cf and PuBe neutron sources in our laboratory. In addition, we will compare imaging performance to other compact neutron imaging systems that exist in literature.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Mid-infrared Pulsed Upconversion Imaging in a Rotating Detonation Combustor

To meet the challenges associated with performing mid-InfraRed (IR) imaging in Rotating Detonation Combustors (RDCs), a novel pulsed mid-IR UpConversion Imaging (UCI) diagnostic has been implemented. UCI is an alternative to direct mid-IR detection that uses nonlinear optical frequency mixing to shift mid-IR wavelengths carrying a target image to shorter wavelengths that can be imaged with high-performance silicon-based CCD/CMOS cameras. This approach offers several favorable properties including high spectral selectivity, high temporal resolution, and superior low-light detectivity. A hydrogen-air research RDC was operated with carbon dioxide addition to allow pulsed UCI imaging of mid-IR luminosity within the combustion channel from spontaneous thermal emissions. The resulting measurements demonstrate high spatiotemporal resolution capable of imaging small structures near the supersonically propagating detonation wave front. The results show how this technique can be used to observe sharp gradients and millimeter-scale structures in the high-temperature, high-pressure zones RDC flow fields.

White, Logan W.↗
DOE OSTI2024

Secondary-electron imaging of bulk crystalline specimens in an aberration corrected $\text{STEM}$

Atomic-scale electron microscopy traditionally probes thin specimens, with thickness below 100 nm, and its feasibility for bulk samples has not been documented. Here in this study, we explore the practicality of scanning transmission electron microscope (STEM) imaging with secondary electrons (SE), using a silicon-wedge specimen having a maximum thickness of 18 μm. We find that the atomic structure is present in the entire thickness range of the SE images although the background intensity increases moderately with thickness. The consistent intensity of secondary electron (SE) images at atomic positions and the modest increase in intensity in between (background) observed in silicon suggest a limited contribution from SEs generated by backscattered electrons, a conclusion supported by our multislice calculations. We conclude that achieving atomic resolution in SE imaging for bulk specimens is indeed attainable using aberration-corrected STEM and that an aberration-corrected scanning electron microscope (SEM) may have the capacity for atomic-level resolution, holding great promise for future strides in materials research.

25 ENERGY STORAGE↗
DOE OSTI2022

Pinhole‐Free Ultrathin Silicon Oxide Layer by Ozone‐Dissolved Deionized Water

The pinhole‐free silicon oxide (SiO x ) layer grown using dissolved ozone in deionized water (DI‐O 3 ) is demonstrated. An ultrathin SiO x layer of thickness 1.53 nm ± 1.5% is grown on silicon wafer using 7 ppm DI‐O 3 . A four‐step methodology, including 25 wt% aq. tetramethylammonium hydroxide (TMAH) solution at 80 °C, is employed to magnify the pinhole signatures in the underlying silicon and visualized with dark‐field optical microscopy (DFOM) and scanning electron microscopy (SEM). The DFOM images show spots on the surface of wafer that originate from airborne particles, contamination, etc. SEM images reveal the absence of etch pits in silicon even after etching of SiO x /silicon in TMAH for 300 s. The minority carrier lifetime and interface states density in AlO x ‐capped SiO x /Si structure are ≥2 ms at carrier density of 1 × 10 15 cm −3 and less than 2 × 10 11 cm −2 eV −1 , respectively.

42 ENGINEERING↗
DOE OSTI2024

Optical contrast analysis of α -RuCl 3 nanoflakes on oxidized silicon wafers

α-RuCl 3 , a narrow-band Mott insulator with a large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl 3 nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl 3 nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl 3 nanoflakes with thicknesses below 100 nm on SiO 2 /Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl 3 nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of –0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl 3 thickness.

2D materials↗
DOE OSTI2024

Cherenkov photon background for low-noise silicon detectors in space

Future space observatories dedicated to direct imaging and spectroscopy of extra-solar planets will require ultra-low-noise detectors that are sensitive over a broad range of wavelengths. Silicon charge-coupled devices (CCDs), such as EMCCDs, Skipper CCDs, and Multi-Amplifier Sensing CCDs, have demonstrated the ability to detect and measure single photons from ultra-violet to near-infrared wavelengths, making them candidate technologies for this application. In this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic charged particles traversing a silicon detector. In the intense radiation environment of space, energetic cosmic rays produce high-energy tracks and more extended halos of low-energy Cherenkov photons, which are detectable with ultra-low-noise detectors. We present a model of this effect that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low noise silicon detectors in space. We find that the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds that have previously been considered.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

High dynamic range CdTe mixed-mode pixel array detector (MM-PAD) for kilohertz imaging of hard x-rays

A hard x-ray, high-speed, high dynamic range scientific x-ray imager is described. The imager is based on the mixed-mode pixel array detector (MM-PAD) readout chip coupled to a 750 µm thick cadmium telluride (CdTe) sensor. The full imager is a 2 × 3 tiled array of MM-PAD sensor/readout chip hybrids. CdTe improves detection for high energy x-rays as compared to silicon sensors, enabling efficient x-ray imaging to extend to >100 keV. The detector is capable of 1 kHz imaging and in-pixel circuitry has been designed to allow for well depths of greater than 4 × 10 6 80 keV x-rays. Here, a charge integrating front-end allows for quantitative measurement of high flux x-ray images beyond the capabilities of photon counting detectors. Detector performance is summarized and experimental measurements are presented.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2021

Anisotropic neutron response of trans-stilbene and impact on a handheld dual particle imager

Here this manuscript details measurements of the anisotropic light-output response of trans-stilbene, henceforth referred to as stilbene, along the three primary crystal planes and analyzes how this anisotropic response impacts neutron image reconstruction in a handheld dual particle imager (H2DPI). A prototype H2DPI composed of stilbene pillars (6 x 6 x 50 mm 3 ) coupled to silicon photomultipliers was built and is capable of imaging both fast neutrons and gamma rays from kilogram quantities of special nuclear material. Stilbene was chosen as the scintillating medium for the imager because of its pulse shape discrimination capability, time resolution and relatively high light output. A drawback to using stilbene, however, is the anisotropic response. A recoiling proton from a neutron elastic-scattering event in stilbene will yield different amounts of scintillation light depending on the direction of the recoiling proton with respect to the crystal lattice. This manuscript analyzes how this anisotropic response impacts neutron image reconstruction in 4π. The light output in the three primary crystal planes of stilbene were independently measured 6–7 times for proton recoil energies ranging from 0.5–5.0 MeV using a quasi-monoenergetic time-of-flight neutron source. The measured light-output data in the three crystal planes were fit with a semi-empirical function based on Birks’ formula. These fits were used to reconstruct the location of a 252 Cf source in front of the imager (0°, -0.8°), to the left of the imager (-90°, -0.8°) and directly above the imager (0°, 90°) to determine if it is necessary to apply the directionally-dependent response of stilbene to accurately reconstruct source locations. A bootstrapping technique was applied to the measured data sets to produce 1000 images composed of 2000 cone projections for each source location and each measured light-output curve. List-mode maximum likelihood expectation maximization was applied to each image; the highest pixel location and the full width at half maximum (FWHM) were then recorded. The average and standard deviations of these parameters were taken for each set of images. The maximum difference in the average azimuthal pixel location when varying between the appropriate and incorrect light-output curves for the source locations at (0°, -0.8°) and (-90°, -0.8°) were respectively found to be 1.85 ± 1.39° and 2.03 ± 1.78°. All other pixel locations and FWHMs were within a single standard deviation of uncertainty. Taken together, the anisotropic response of stilbene has negligible impact on the neutron image reconstruction capability of the H2DPI.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Characterization of the Cherenkov Photon Background for Low-noise Silicon Detectors in Space

Future space observatories that seek to perform imaging and spectroscopy of faint astronomical sources will require ultra-low-noise detectors that are sensitive over a broad wavelength range. Silicon charge-coupled devices (CCDs), such as EMCCDs, skipper CCDs, multi-amplifier sensing CCDs, and single-electron sensitive read out CCDs have demonstrated the ability to detect and measure single photons from X-ray energies to near the silicon band gap (∼1.1 μm), making them candidate technologies for this application. Here, in this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic cosmic rays traversing a silicon detector. We present a model for Cherenkov photon production and absorption that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low-noise silicon detectors in space. We study how the Cherenkov background rate depends on detector thickness, variations in solar activity, and the contribution of heavy cosmic ray species (Z > 2). We find that for thick silicon detectors, such as those required to achieve high quantum efficiency at long wavelengths, the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds. We apply our Cherenkov background model to simulated spectroscopic observations of extra-solar planets, and we find that thick detectors continue to outperform their thinner counterparts at longer wavelengths despite a larger Cherenkov background rate. Furthermore, we find that minimal masking of cosmic-ray tracks continues to maximize the signal-to-noise ratio of very faint sources despite the existence of extended halos of Cherenkov photons.

Astronomical detectors↗