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Formation of B 2 N molecules occurs when solid BN is utilized as feedstock for the synthesis of boron nitride nanomaterials.
The thermochemical details of fabricating uranium nitride (UN) by ammonolysis of uranium tetraflouride (UF 4 ) were determined using density functional theory (DFT) and CALculation of PHAse Diagrams (CALPHAD) computational methods. The thermochemical data of all binary, ternary, and quaternary U-H-N-F phases were computed using DFT, and the data for the phases that have not been measured experimentally, including UN 2 and NH 4 F(g), were combined with existing experimentally-determined data for CALPHAD modeling. The DFT data were benchmarked using experimental Gibbs energy of reaction and experimental thermochemical data for individual species. Phase diagrams relevant to the ammonolysis reaction are depicted, showing regions of stability for solid U-N, U-F and U-N-F phases. An unidentified phase produced in a previous experiment was identified as UN 0.95 F 1.2 (UNF) by comparing its X-ray diffraction spectrum to the experimental spectrum, and its formation during the fabrication of UN from UF 4 is supported by the simulated phase diagram. Here, it is calculated that UN 2 can be produced by the ammonolysis of UF 4 , but requires elevated temperatures, high NH 3 (g) partial pressure, and large amounts of flowing NH 3 (g) to avoid solid flu oride impurities in the uranium nitride. Likewise, U 2 N 3 can be produced instead at temperatures greater than 980 K. The use of silane (SiH 4 ) gas was investigated as a potential additive in the ammonolysis fabrication route to speed removal of fluorine. The addition of SiH 4 (g) offers little advantage to the removal of fluorine, and adds the complication of Si 3 N 4 formation. The use of DFT to fill in missing data to perform CALPHAD calculations demonstrated here allows for the determination of more comprehensive and trustworthy phase diagrams than the use of existing experimental data alone.
Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonic applications. Most recently, optically addressable spin qubits in h-BN have been the focus of intensive research due to their unique potential in quantum computation, communication, and sensing. However, the number of high-symmetry, high-spin defects that are desirable for developing spin qubits in h-BN is highly limited. Here, we combine density functional theory (DFT) and quantum embedding theories to show that out-of-plane X N Y i dimer defects (X, Y = C, N, P, and Si) form a new class of stable C 3v spin-triplet defects in h-BN. We find that the dimer defects have a robust 3 A 2 ground state and 3 E excited state, both of which are isolated from the h-BN bulk states. We show that 1 E and 1 A shelving states exist and they are positioned between the 3 E and 3 A 2 states for all the dimer defects considered in this study. To support future experimental identification of the X N Y i dimer defects, we provide extensive characterization of the defects in terms of their spin and optical properties. We predict that the zero-phonon line of the spin-triplet X N Y i defects lies in the visible range (800 nm to 500 nm). We compute the zero-field splitting of the dimers’ spin to range from 1.79 GHz (Si N P i o ) to 29.5 GHz (C N N i o ). Furthermore, our results broaden the scope of high-spin defect candidates that would be useful for the development of spin-based solid-state quantum technologies in two-dimensional hexagonal boron nitride.
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Photoelectrochemical production of fuels requires photoelectrodes that efficiently convert sunlight to electrochemical energy by producing photovoltage and photocurrent and maintain this ability over time under a variety of pH, illumination, and applied bias conditions. Work in the photovoltaic community has demonstrated that interfaces with high charge carrier selectivity provide high photovoltages. This offers a co-design opportunity to create semiconductor photoelectrodes with contact layers that are both carrier-selective and offer protection from degradation in aqueous solutions. In this work, we explored the ternary nitride ZnTiN 2 as an electronselective, protective layer for Si-based photocathodes. We demonstrated that ZnTiN 2 formed a heterojunction with p-type Si that facilitated electron movement toward the ZnTiN 2 surface for light-driven reduction reactions. Across a variety of electrolyte conditions, ZnTiN 2 /Si produced an open circuit voltage of ca. 400 mV vs the solution potential, while bare Si produced 220−480 mV vs the solution potential depending on conditions. ZnTiN 2 was also shown to protect Si over 72 h at open circuit in the dark in 0.1 M KHCO 3 aqueous solution at pH 10.5, with a 2.4% loss in open circuit voltage compared to a 17% loss for unprotected Si. A protective effect was also observed under illumination during methyl viologen reduction at pH 3.5 for 21 h, with a 2.5% loss in open circuit voltage observed for ZnTiN 2 /Si compared to a 25% loss in open circuit voltage for unprotected Si under the same conditions. Elemental characterization revealed the presence of oxides on the surface of ZnTiN 2 that are consistent with the Pourbaix diagram after photoelectrochemical operation; these oxides appeared to support durability without hindering charge carrier extraction to drive electrochemical work. This work highlights the promise of ZnTiN 2 for durable photoelectrochemical applications.
III-nitrides have fomented a revolution in the lighting industry and are poised to make a huge impact in the field of power electronics. In the III-nitride family, the crystal growth and use of hexagonal BN (h-BN) as an ultrawide bandgap (UWBG) semiconductor are much less developed. Bulk crystals of h-BN produced by the high-temperature/high-pressure and the metal flux solution methods possess very high crystalline and optical qualities but are impractical to serve as substrates or for device implementation as their sizes are typically in millimeters. The development of crystal growth technologies for producing thick epitaxial films (or quasi-bulk or semi-bulk crystals) in large wafer sizes with high crystalline quality is a prerequisite for utilizing h-BN as an UWBG electronic material. Compared to traditional III-nitrides, BN has another unique application as solid-state neutron detectors, which however, also require the development of quasi-bulk crystals to provide high detection efficiencies because the theoretical efficiency (ηi) relates to the detector thickness (d) by ηi=1−e−dλ, where λ denotes the thermal neutron absorption length which is 47 μm (237 μm) for 10B-enriched (natural) h-BN. We provide an overview and recent progress toward the development of h-BN quasi-bulk crystals via hydride vapor phase epitaxy (HVPE) growth and the attainment of thermal neutron detectors based on 100 μm thick 10B-enriched h-BN with a record efficiency of 60%. The thermal neutron detection efficiency was shown to enhance at elevated temperatures. Benchmarking the crystalline and optical qualities of h-BN quasi-bulk crystals with the state-of-the-art mm-sized bulk crystal flakes and 0.5 μm thick epitaxial films identified that reducing the density of native defects such as vacancies remains the most critical task for h-BN quasi-bulk crystal growth by HVPE.
Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm 2 . LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.
Ternary nitrides in the family A 3 B x N (A=Co, Ni, Fe; B=Mo; x=2,3) identified and synthesized. Experiments with Co 3 Mo 3 N in Ammonia Synthesis Reactor demonstrate cyclable NH3 production from bulk nitride under pure H 2 . Production rates were approx. constant in all the reduction steps with no evident dependence on the consumed solid-state nitrogen up to formation of 661. Material can be re-nitridized under pure N 2 (or 10% H 2 /N 2 ). Bulk N utilization per reduction step averaged between 25 – 40% of the total (2-3 hours). Rate equations and parameters extracted from data. NH 3 selectivity exceeds gas phase equilibrium at higher temperatures (in a large excess of H 2 ). Selectivity begins to decrease significantly above 650 C, N 2 production rapidly increases above 650 C seemingly due to reaction that is zero order in H 2 (thermal reduction of the nitride?). Poised to begin the systematics studies of relationships between materials and reactions.
III-nitride wide bandgap semiconductors have contributed on the grandest scale to many technological advances in lighting, displays, and power electronics. Among III-nitrides, BN has another unique application as a solid-state neutron detector material because the isotope B-10 is among a few elements that have an unusually large interaction cross section with thermal neutrons. A record high thermal neutron detection efficiency of 60% has been achieved by B-10 enriched h-BN detectors of 100 μm in thickness in our group. However, direct detection of fast neutrons with energies above 1 MeV is highly challenging due to the extremely low interaction cross section of fast neutrons with matter. We report the successful attainment of 0.4 mm thick freestanding h-BN 4"-diameter wafers, which enabled the demonstration of h-BN fast neutron detectors capable of delivering a detection efficiency of 2.2% in response to a bare AmBe neutron source. Furthermore, it was shown that the energy information of incoming fast neutrons is retained in the neutron pulse-height spectra. A comparison of characteristics between h-BN fast and thermal neutron detectors is summarized. Neutron detectors are vital diagnostic instruments for nuclear and fusion reactor power and safety monitoring, oil field exploration, neutron imaging and therapy, as well as for plasma and material science research. With the outstanding attributes resulting from its ultrawide bandgap (UWBG), including the ability to operate at extreme conditions of high power, voltage, and temperature, the availability of h-BN UWBG semiconductor detectors with the capability of simultaneously detecting thermal and fast neutrons with high efficiencies is expected to open unprecedented applications that are not possible to attain by any other types of neutron detectors.
Solar Thermal Ammonia Production has the potential to synthesize ammonia in a green, renewable process that can greatly reduce the carbon footprint left by conventional Haber-Bosch reaction. Ternary nitrides in the family A 3 B x N (A=Co, Ni, Fe; B=Mo; x=2,3) have been identified as a potential candidate for NH 3 production. Experiments with Co 3 Mo 3 N in Ammonia Synthesis Reactor demonstrate cyclable NH 3 production from bulk nitride under pure H 2 . Production rates were fairly flat in all the reduction steps with no evident dependence on the consumed solid-state nitrogen, as would be expected from catalytic Mars-van Krevelen mechanism. Material can be re-nitridized under pure N 2 . Bulk nitrogen per reduction step average between 25 – 40% of the total solid-state nitrogen. Selectivity to NH 3 stabilized at 55 – 60% per cycle. Production rates (NH 3 and N 2 ) become apparent above 600 °C at P(H 2 ) = 0.5 – 2 bar. Optimal point of operation to keep selectivity high without compromising NH 3 rates currently estimated at 650 °C and 1.5 - 2 bar. The next steps are to optimize production rates, examine effect of N 2 addition in NH 3 synthesis reaction, and test additional ternary nitrides.
Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diverse chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N 2 , the number of predicted nitride compounds dwarfs the number that have been synthesized, offering a breadth of opportunity for exploration. This review summarizes the fundamental properties and structural chemistry of ternary nitrides, leveraging metastability and the impact of nitrogen chemical potential. A discussion of prevalent defects, both detrimental and beneficial, is followed by a survey of synthesis techniques and their interplay with metastability. Throughout the review, we highlight applications (such as solid-state lighting, electrochemical energy storage, and electronic devices) in which ternary nitrides show particular promise.
Silicon nitride is used for its low optical loss and high thermal stability, making it a suitable platform for visible-light applications in integrated photonic devices. However, its application has been limited due to inefficient light emission, a problem addressed by integrating various types of light emitters onto the platform. In particular, the integration of solution-processable colloidal nanocrystals (NCs) as optical gain materials onto the silicon nitride platform is a promising route but requires a more solid theoretical footing. By leveraging 2D surface-emitting photonic crystal structures combined with NCs, we effectively confine and manipulate light to achieve lasing from green to red. Building on this, we model the light–matter interactions of the low index contrast NC/nitride platform, validated by extensive experimental validations through Fourier imaging techniques, revealing the full photonic band structure and showing clear mode congestion. Finally, these comprehensive studies confirm the potential of hybrid NC-based structures for fully integrated on-chip laser applications and indicate routes for further improvement.
Friction stir welding and processing (FSW/P) has emerged as an effective solid-state joining technique for fabricating metal matrix composites (MMCs), offering improved mechanical properties through refined microstructural evolution. In this study, an aluminum-boron nitride nanoparticle (Al-BNNP) composite was synthesized via FSW, and its indentation-based mechanical properties were systematically evaluated. Microhardness mapping across the weld cross-section revealed a progressive increase in hardness toward the stir zone (SZ), attributed to severe plastic deformation, dynamic recrystallization (DRX), and the reinforcing effect of BNNPs. Profilometry-based indentation plastometry (PIP) inferred yield strength (YS) demonstrates a 47.8% increase compared to the base metal (BM) and a 75% improvement compared to FSP pure aluminum reported in literature. This enhancement is attributed to strengthening mechanisms, including grain boundary pinning, load transfer, and increased dislocation density. The strain rate sensitivity (SRS) measurements at the nanoscale demonstrated a substantial decrease in the SZ, correlated with ultrafine grain structures and strong BNNP-matrix interactions. Activation volume analysis revealed a significant reduction in the SZ, suggesting that dislocation motion is increasingly restricted by dislocation-dislocation and dislocation-particle interactions. These findings suggest that incorporating BNNPs in FSW/P enables tailoring the microstructure without thermal degradation of the secondary particles, thereby significantly enhancing the mechanical performance of aluminum composites, particularly for structural applications in aerospace and automotive industries.
Understanding how water behaves when confined within atomic layers of active transition-metal carbides, nitrides, and carbonitrides is essential for uncovering the fundamental principles needed to engineer solid–liquid interfaces at the atomic scale. Yet, how lattice element chemistry and surface termination groups collectively regulate the structure and mobility of such interlayer water remains poorly understood. Here, we present a composition-controlled investigation of interlayer water dynamics in layered transition-metal nitride, carbide, and carbonitride systems using a systematic integration of quasi-elastic neutron scattering (QENS), ab initio molecular dynamics (AIMD) simulations, and density functional theory (DFT) calculations. QENS measurements show that nitride-rich systems host mobile, translationally diffusing water with thermally activated self-diffusion coefficients on the order of 10 –10 m 2 s –1 , whereas mixed C/N lattices confine water to localized, nontranslational motion that is insensitive to temperature. AIMD and DFT reveal that lattice C/N chemistry and surface functional group composition reshape the first hydration layer by modulating the surface electronic structure and termination-dependent hydrogen-bond networks, leading to pronounced differences in water ordering and thermal resilience. On the other hand, fully carbide systems exhibit intermediate behavior, highlighting that water mobility is not primarily controlled by the hydration level alone but by the coupling between lattice composition and surface chemistry. Overall, this study establishes how surface chemistry and lattice composition jointly control interfacial hydrogen bond dynamics, offering a mechanistic framework for designing transition-metal layered materials with tailored interfacial transport properties.
Non-oxide ceramics, which consist of predominantly carbides, borides, and nitrides, are of great interest to modern engineering because of their resistance to extreme conditions. Properties of such materials include high temperature resistance, high hardness, chemical resistance, and high fracture toughness. However, the main method for manufacturing parts of these materials is by machining cylindrical billets to the desired geometry. Not only does this produce waste, but the cost of machining is high since the part materials are of such high hardness. This method is used because these non-oxide ceramics must be sintered to high density using simultaneous heat and pressure within a hot-pressing unit. These units are inherently restricted to cylindrical geometries. A proposed way to expand the capabilities of a hot-press is by using intermediate compressible dies. This method consists of surrounding a ceramic part green body with a material that will shrink at the same rate as the part and survive the hot-pressing conditions. At the end, the compressible die material would be removed leaving a nearly net shaped hot-pressed part. In this study, graphite powder was investigated as the compressible die material with its shrinkage rate being controlled by particle size mixing. Both ceramic materials and graphite were then cast into parts and compressible dies respectively to show the feasibility of the compressible die hot-pressing method.
NaCl-KCl molten salt system has been proposed as a primary component of several promising heat transfer eutectics and fuel host for Generation IV molten salt reactors (MSR). In this work, several key thermodynamic parameters, including high temperature enthalpies, isobaric heat capacities (C p ) and molar enthalpies of mixing (ΔH mix ), of the NaCl -KCl system (NaCl, 75mol% NaCl – 25mol% KCl, 51mol% NaCl – 49mol% KCl, 25mol% NaCl – 75mol% KCl, and KCl) were measured by high temperature drop calorimetry (HTDC) utilizing laser sealed nickel and aluminum crucibles. Salts were checked for phase purity by X-ray diffraction (XRD), and water content by Karl Fischer coulometric titrimetry and thermogravimetric analysis (TGA). Thermo-mechanical analysis (TMA) utilizing custom-built boron nitride (BN) crucibles was employed to determine temperatures of phase transitions (solid $\rightarrow$ liquid) for the salts and plotted against the pseudobinary phase diagram for the NaCl-KCl system. Small deviations (3-10 %) were found among C p values obtained from HTDC, differential scanning calorimetry (DSC), and NIST, comparable to the average uncertainty based on two standard deviations of measured data that are ~6% for DSC and ~3% for HTDC. Additionally, the measured enthalpies and C p values of mixed NaCl-KCl salts (e.g., 51mol% NaCl – 49mol% KCl eutectic) were shown to behave as statistical mixtures of its pure endmembers, consistent with ΔH mix = ~ 0 kJ/mol at 800 °C, and a regular interaction parameter of Ω = 1.20 ± 0.76 kJ/mol. In conclusion, this study represents a step towards improved accuracy and precision in determinations of thermodynamic parameters of molten salts by using DSC, TMA, and HTDC, in completion of the Molten Salt Thermal Properties Database (MSTDB).
The formation of well-controlled interfaces between materials of different structure and bonding is a key requirement when developing new devices and functionalities. Of particular importance are epitaxial or low defect density interfaces between two-dimensional materials and three-dimensional semiconductors or metals, where an interfacial structure influences electrical conductivity in field effect and optoelectronic devices, charge transfer for spintronics and catalysis, and proximity-induced superconductivity. Epitaxy and hence well-defined interfacial structure has been demonstrated for several metals on van der Waals-bonded substrates. Semiconductor epitaxy on such substrates has been harder to control, for example during chemical vapor deposition of Si and Ge on graphene. Here, we demonstrate a catalytically mediated het-eroepitaxy approach to achieve epitaxial growth of three-dimensional semiconductors such as Ge and Si on van der Waals-bonded materials such as graphene and hexagonal boron nitride. Epitaxy is "transferred" from the substrate to semiconductor nanocrystals via solid metal nano-crystals that readily align on the substrate and catalyze the formation of aligned nuclei of the semiconductor. In situ transmission electron microscopy allows us to elucidate the reaction pathway for this process and to show that solid metal nanocrystals can catalyze semiconductor growth at a significantly lower temperature than direct chemical vapor deposition or deposition mediated by liquid catalyst droplets. We discuss Ge and Si growth as a model system to explore the details of such hetero-interfacing and its applicability to a broader range of materials.
Thermal neutron detectors based on hexagonal boron nitride ( h -BN) epilayers have demonstrated a record high efficiency among solid-state detectors at 58%. It was found that the performance of h -BN detectors is profoundly influenced by charge recombination at the surfaces. The dynamic process of surface oxidation in h -BN epilayers has been probed by x-ray photoelectron spectroscopy. The spectra of high-resolution (0.1 eV) scans indicated that the linewidth of the B 1s peak at 190.6 eV increased and the peak intensity decreased with an increase in exposure time in-air (t air ). The main B 1s peak at 190.6 eV evolved into multiple peaks at a higher binding energy position due to oxygen impurities tending to occupy nitrogen sites and form the B–O bond. Time constants of the oxidation process have been determined, revealing that the formation process of the B–O bond is very fast and within minutes in h -BN. The results suggest that reducing nitrogen vacancy generation during growth and employing surface treatment techniques would further improve the performance of h -BN devices.