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Results for “analog memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

In situ Parallel Training of Analog Neural Network Using Electrochemical Random-Access Memory

In-memory computing based on non-volatile resistive memory can significantly improve the energy efficiency of artificial neural networks. However, accurate in situ training has been challenging due to the nonlinear and stochastic switching of the resistive memory elements. One promising analog memory is the electrochemical random-access memory (ECRAM), also known as the redox transistor. Its low write currents and linear switching properties across hundreds of analog states enable accurate and massively parallel updates of a full crossbar array, which yield rapid and energy-efficient training. While simulations predict that ECRAM based neural networks achieve high training accuracy at significantly higher energy efficiency than digital implementations, these predictions have not been experimentally achieved. In this work, we train a 3 × 3 array of ECRAM devices that learns to discriminate several elementary logic gates (AND, OR, NAND). We record the evolution of the network’s synaptic weights during parallel in situ (on-line) training, with outer product updates. Due to linear and reproducible device switching characteristics, our crossbar simulations not only accurately simulate the epochs to convergence, but also quantitatively capture the evolution of weights in individual devices. The implementation of the first in situ parallel training together with strong agreement with simulation results provides a significant advance toward developing ECRAM into larger crossbar arrays for artificial neural network accelerators, which could enable orders of magnitude improvements in energy efficiency of deep neural networks.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1994

Integrated, nonvolatile, high-speed analog random access memory

This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

Katti, Romney R.↗
DOE OSTI2022

Nonvolatile Electrochemical Random‐Access Memory under Short Circuit

Abstract Electrochemical random‐access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in‐memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This short retention has precluded ECRAM from being considered for inference classification in deep neural networks, which is likely the largest opportunity for in‐memory computing. In this work, an ECRAM cell with orders of magnitude longer retention than previously achieved is developed, and which is anticipated to exceed ten years at 85 °C. This study hypothesizes that the origin of this exceptional retention is phase separation, which enables the formation of multiple effectively equilibrium resistance states. This work highlights the promises and opportunities to use phase separation to yield ECRAM cells with exceptionally long, and potentially permanent, retention times.

Kim, Diana S.↗
NASA NTRS1992

Digital tracking loops for a programmable digital modem

In this paper, an analysis and hardware emulation of the tracking loops for a very flexible programmable digital modem (PDM) will be presented. The modem is capable of being programmed for 2, 4, 8, 16-PSK, 16-QAM, MSK, and Offset-QPSK modulation schemes over a range of data rates from 2.34 to 300 Mbps with programmable spectral occupancy from 1.2 to 1.8 times the symbol rate; these operational parameters are executable in burst or continuous mode. All of the critical processing in both the modulator and demodulator is done at baseband with very high-speed digital hardware and memory. Quadrature analog front-ends are used for translation between baseband and the IF center frequency. The modulator is based on a table lookup approach, where precomputed samples are stored in memory and clocked out according to the incoming data pattern. The sample values are predistorted to counteract the effects of the other filtering functions in the link as well as any transmission impairments. The demodulator architecture was adapted from a joint estimator-detector (JED) mathematical analysis. Its structure is applicable to most signalling formats that can be represented in a two-dimensional space. The JED realization uses interdependent, mutually aiding tracking loops with post-detection data feedback. To expedite and provide for more reliable synchronization, initial estimates for these loops are computed in a parallel acquisition processor. The cornerstone of the demodulator realization is the pre-averager received data filter which allows operation over a broad range of data rates without any hardware changes and greatly simplifies the implementation complexity. The emulation results confirmed tracking loop operation over the entire range of operational parameters listed above, as well as the capability of achieving and maintaining synchronization at BER's in excess of 10(exp -1). The emulation results also showed very close agreement with the tracking loop analysis, and validated the resolution apportionment of the various hardware elements in the tracking loops.

Poklemba, John J.↗
DOE OSTI2023

Compute in‐Memory with Non‐Volatile Elements for Neural Networks: A Review from a Co‐Design Perspective

Abstract Deep learning has become ubiquitous, touching daily lives across the globe. Today, traditional computer architectures are stressed to their limits in efficiently executing the growing complexity of data and models. Compute‐in‐memory (CIM) can potentially play an important role in developing efficient hardware solutions that reduce data movement from compute‐unit to memory, known as the von Neumann bottleneck. At its heart is a cross‐bar architecture with nodal non‐volatile‐memory elements that performs an analog multiply‐and‐accumulate operation, enabling the matrix‐vector‐multiplications repeatedly used in all neural network workloads. The memory materials can significantly influence final system‐level characteristics and chip performance, including speed, power, and classification accuracy. With an over‐arching co‐design viewpoint, this review assesses the use of cross‐bar based CIM for neural networks, connecting the material properties and the associated design constraints and demands to application, architecture, and performance. Both digital and analog memory are considered, assessing the status for training and inference, and providing metrics for the collective set of properties non‐volatile memory materials will need to demonstrate for a successful CIM technology.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing-in-memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field-effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high-conductance state. We show that this device can be set to a low-conductance state by sweeping a negative bias on the device drain, and reset it to its high-conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide-semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group-IV HFETs to perform as analog cryogenic memory components.

cryogenic memory↗
NASA NTRS1978

A cycle timer for testing electric vehicles

The paper presents a cycle timer which enables the accurate following and repetition of SAE driving schedules of stop and go cycles, for electric vehicles, by reducing the human factor. The system which consists of a programmable read-only memory (PROM) stores each of these cycles, which are detailed, on its own plug-in card. The actual vehicle speed, and the PROM indicated desired speed are displayed on a dual scale meter allowing the driver to match them. A speed change is preceded by a half second buzzer warning and a new cycle by a one second warning. The PROM controls the recycle start time as well as the buzzer activation. A 5 volt regulator providing logic power, and a 12 volt dc-dc converter providing analog and memory power are described.

Soltis, R. F.↗
DOE OSTI2024

Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ~135 μC/cm 2 charge in Al 1-x B x N via electron microscopy, Al 1-x B x N ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn 1-x Mg x O. In conclusion, the main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Active analog tuning of the phase of light in the visible regime by bismuth-based metamaterials

The active and analog tuning of the phase of light by metamaterials is needed to boost the switching performance of photonic devices. However, demonstrations of this type of tuning in the pivotal visible spectral region are still scarce. Herein, we report the active analog tuning of the phase of visible light reflected by a bismuth (Bi)-based metamaterial, enabled by a reversible solid-liquid transition. This metamaterial, fabricated by following a lithography-free approach, consists of twodimensional assemblies of polydisperse plasmonic Bi nanostructures embedded in a refractory and transparent aluminum oxide matrix. The analog tuning of the phase is achieved by the controlled heating of the metamaterial to melt a fraction of the nanostructures. A maximum tuning of 320° (1.8 π) is observed upon the complete melting of the nanostructures at 230°C. This tuning is reversible by cooling to 25°C. In addition, it presents a wide hysteretic character due to liquid Bi undercooling. This enables the phase achieved by this analog approach to remain stable over a broad temperature range upon cooling and until resolidification occurs around 100°C. Therefore, Bi-based metamaterials are endowed with analog optical memory capabilities, which are appealing for a wide range of applications, including optical data storage with enhanced information density or bistable photonic switching with a tunable “on” state.

36 MATERIALS SCIENCE↗
NASA NTRS1990

Solid-state thin-film memistor for electronic neural networks

This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.

Thakoor, S.↗
NASA NTRS1991

One GHz digitizer for space based laser altimeter

This is the final report for the research and development of the one GHz digitizer for space based laser altimeter. A feasibility model was designed, built, and tested. Only partial testing of essential functions of the digitizer was completed. Hybrid technology was incorporated which allows analog storage (memory) of the digitally sampled data. The actual sampling rate is 62.5 MHz, but executed in 16 parallel channels, to provide an effective sampling rate of one GHz. The average power consumption of the one GHz digitizer is not more than 1.5 Watts. A one GHz oscillator is incorporated for timing purposes. This signal is also made available externally for system timing. A software package was also developed for internal use (controls, commands, etc.) and for data communication with the host computer. The digitizer is equipped with an onboard microprocessor for this purpose.

Staples, Edward J.↗
NASA NTRS1994

Improved Writing-Conductor Designs For Magnetic Memory

Writing currents reduced to practical levels. Improved conceptual designs for writing conductors in micromagnet/Hall-effect random-access integrated-circuit memory reduces electrical current needed to magnetize micromagnet in each memory cell. Basic concept of micromagnet/Hall-effect random-access memory presented in "Magnetic Analog Random-Access Memory" (NPO-17999).

Wu, Jiin-Chuan↗
NASA NTRS2012

Investigation into Cloud Computing for More Robust Automated Bulk Image Geoprocessing

Geospatial resource assessments frequently require timely geospatial data processing that involves large multivariate remote sensing data sets. In particular, for disasters, response requires rapid access to large data volumes, substantial storage space and high performance processing capability. The processing and distribution of this data into usable information products requires a processing pipeline that can efficiently manage the required storage, computing utilities, and data handling requirements. In recent years, with the availability of cloud computing technology, cloud processing platforms have made available a powerful new computing infrastructure resource that can meet this need. To assess the utility of this resource, this project investigates cloud computing platforms for bulk, automated geoprocessing capabilities with respect to data handling and application development requirements. This presentation is of work being conducted by Applied Sciences Program Office at NASA-Stennis Space Center. A prototypical set of image manipulation and transformation processes that incorporate sample Unmanned Airborne System data were developed to create value-added products and tested for implementation on the "cloud". This project outlines the steps involved in creating and testing of open source software developed process code on a local prototype platform, and then transitioning this code with associated environment requirements into an analogous, but memory and processor enhanced cloud platform. A data processing cloud was used to store both standard digital camera panchromatic and multi-band image data, which were subsequently subjected to standard image processing functions such as NDVI (Normalized Difference Vegetation Index), NDMI (Normalized Difference Moisture Index), band stacking, reprojection, and other similar type data processes. Cloud infrastructure service providers were evaluated by taking these locally tested processing functions, and then applying them to a given cloud-enabled infrastructure to assesses and compare environment setup options and enabled technologies. This project reviews findings that were observed when cloud platforms were evaluated for bulk geoprocessing capabilities based on data handling and application development requirements.

Brown, Richard B.↗