Supersymmetry in string bit models with internal degrees of freedom
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Single-event upset (SEU) cross sections are reduced in 176-layer charge trap (CT) 3-D nand devices under proton irradiation when multiple write operations are applied sequentially without the typical erase-before-write. Here, this effect is observed for multiple data patterns and in both single-level cell (SLC) and triple-level cell (TLC) operating modes. SEU cross section calculation methodologies are discussed for highly scaled 3-D devices both with and without the application of rewrites, and potential implications for long-term endurance effects are proposed.
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Presentation on ferroelectric tunnel junctions used in a multistate method.
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Transmon qubits are among the leading technologies for the development of future quantum computers. However these superconducting devices are sensitive to ionizing radiation, which reduces their coherence time and leads to correlated errors. This study represents the first quantitative estimation of cosmic rays and ambient radiation impact on transmon qubits. In the shielded underground facility at the Laboratori Nazionali del Gran Sasso (LNGS), errors induced by the interaction of a radioactive source were reconstructed with an efficiency of about 10%. In contrast, in the unshielded above-ground facility at the Fermi National Accelerator Laboratory (FNAL), cosmic and ambient radiation impacts were detected with an efficiency ranging from 10% to 20% by modifying the acquisition protocol. Lastly, the simultaneous readout of three transmons in coincidence was demonstrated, achieving an event reconstruction efficiency of 90% when the devices were illuminated with an LED.