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Dynamic interactions between ionospheric plasma and spacecraft

Studies of the interactions between the Space Station Freedom and ionospheric plasma led to an improved understanding of the dynamics of these interactions. Some of the issues related to developing and sustaining arcs in ionospheric conditions are considered. A technique for the estimation of the amplitude and duration of arcs is presented. The technique uses the capacitance of the system to estimate the peak current and then uses the charge stored to estimate the arc duration. As new technologies are implemented on spacecraft, new environmental compatibility issues will arise. Some of the issues related to driving dielectric surfaces with alternating current voltages are considered. The steady state charging criteria is that over an oscillation, the ion charge collected is compensated for by the electron charge collected. This tends to drive the average potential negative so that the dielectric surface is positive for only a small portion of the cycle.

Snyder, David B.↗

Board Level Proton Testing Book of Knowledge for NASA Electronic Parts and Packaging Program

This book of knowledge (BoK) provides a critical review of the benefits and difficulties associated with using proton irradiation as a means of exploring the radiation hardness of commercial-off-the-shelf (COTS) systems. This work was developed for the NASA Electronic Parts and Packaging (NEPP) Board Level Testing for the COTS task. The fundamental findings of this BoK are the following. The board-level test method can reduce the worst case estimate for a board's single-event effect (SEE) sensitivity compared to the case of no test data, but only by a factor of ten. The estimated worst case rate of failure for untested boards is about 0.1 SEE/board-day. By employing the use of protons with energies near or above 200 MeV, this rate can be safely reduced to 0.01 SEE/board-day, with only those SEEs with deep charge collection mechanisms rising this high. For general SEEs, such as static random-access memory (SRAM) upsets, single-event transients (SETs), single-event gate ruptures (SEGRs), and similar cases where the relevant charge collection depth is less than 10 μm, the worst case rate for SEE is below 0.001 SEE/board-day. Note that these bounds assume that no SEEs are observed during testing. When SEEs are observed during testing, the board-level test method can establish a reliable event rate in some orbits, though all established rates will be at or above 0.001 SEE/board-day. The board-level test approach we explore has picked up support as a radiation hardness assurance technique over the last twenty years. The approach originally was used to provide a very limited verification of the suitability of low cost assemblies to be used in the very benign environment of the International Space Station (ISS), in limited reliability applications. Recently the method has been gaining popularity as a way to establish a minimum level of SEE performance of systems that require somewhat higher reliability performance than previous applications. This sort of application of the method suggests a critical analysis of the method is in order. This is also of current consideration because the primary facility used for this type of work, the Indiana University Cyclotron Facility (IUCF) (also known as the Integrated Science and Technology (ISAT) hall), has closed permanently, and the future selection of alternate test facilities is critically important. This document reviews the main theoretical work on proton testing of assemblies over the last twenty years. It augments this with review of reported data generated from the method and other data that applies to the limitations of the proton board-level test approach. When protons are incident on a system for test they can produce spallation reactions. From these reactions, secondary particles with linear energy transfers (LETs) significantly higher than the incident protons can be produced. These secondary particles, together with the protons, can simulate a subset of the space environment for particles capable of inducing single event effects (SEEs). The proton board-level test approach has been used to bound SEE rates, establishing a maximum possible SEE rate that a test article may exhibit in space. This bound is not particularly useful in many cases because the bound is quite loose. We discuss the established limit that the proton board-level test approach leaves us with. The remaining possible SEE rates may be as high as one per ten years for most devices. The situation is actually more problematic for many SEE types with deep charge collection. In cases with these SEEs, the limits set by the proton board-level test can be on the order of one per 100 days. Because of the limited nature of the bounds established by proton testing alone, it is possible that tested devices will have actual SEE sensitivity that is very low (e.g., fewer than one event in 1 × 10(exp 4) years), but the test method will only be able to establish the limits indicated above. This BoK further examines other benefits of proton board-level testing besides hardness assurance. The primary alternate use is the injection of errors. Error injection, or fault injection, is something that is often done in a simulation environment. But the proton beam has the benefit of injecting the majority of actual SEEs without risk of something being missed, and without the risk of simulation artifacts misleading the SEE investigation.

Guertin, Steven M.↗

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Jones, C. W.↗

Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers

Multiple-bit errors caused by single-ion tracks in a 256-kb DRAM fabricated by a bulk process were observed for different ion species and stopping power values. The results demonstrate the utility of this device for the evaluation of ion-beam uniformity and ion-beam-induced charge collection in IC devices. The data indicate that single-ion-induced charge transport results in multiple-bit error clusters due to lateral diffusion of excess minority carriers (electrons). Charge collection occurred from a depth of up to 35 microns from the surface of the device. An apparent charge loss was observed for very heavy ions with a high stopping power (Au at 350 MeV).

Zoutendyk, J. A.↗

Field funneling and range straggling in partially depleted silicon surface-barrier detectors

The effects of field funneling and range straggling have been quantitatively observed in the measurement of charge collected from alpha-particle tracks in silicon surface-barrier charged-particle detectors. The method described may be used for the straight-forward measurement of charge collection from heavy ions in these and other semiconductor devices.

Zoutendyk, J. A.↗

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy ion, focused X-ray, pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. The transient shape characteristics depend on the source (ion, X-ray, or laser), even when similar amounts of charge are generated. The observed differences are examined and explained in terms of basic charge collection mechanisms.

Heavy ions↗

Photovoltaic Plasma Interaction Test 2

The International Space Station (ISS) program is developing a plasma contactor to mitigate the harmful effects of charge collection on the station's large photovoltaic arrays. The purpose of the present test was to examine the effects of charge collection on the solar array electrical circuit and to verify the effectiveness of the plasma contactor. The results showed that the plasma contactor was able to eliminate structure arcing for any array output voltage. However, the current requirements of the plasma contactor were higher than those for prior testing and predicted by analysis. Three possible causes for this excess current demand are discussed. The most likely appeared to be a high local pressure on or very near the surface of the array as a result of vacuum tank conditions. Therefore, in actual space conditions, the plasma contactor should work as predicted.

Kaufman, Bradford A.↗

EBIC investigation of hydrogenation of crystal defects in EFG solar silicon ribbons

Changes in the contrast and resolution of defect structures in 205 Ohm-cm EFG polysilicon ribbon subjected to annealing and hydrogenation treatments were observed in a JEOL 733 Superprobe scanning electron microscope, using electron beam induced current (EBIC) collected at an A1 Schottky barrier. The Schottky barrier was formed by evaporation of A1 onto the cleaned and polished surface of the ribbon material. Measurement of beam energy, beam current, and the current induced in the Schottky diode enabled observations to be quantified. Exposure to hydrogen plasma increased charge collection efficiency. However, no simple causal relationship between the hydrogenation and charge collection efficiency could be inferred, because the collection efficiency also displayed an unexpected thermal dependence. Good quality intermediate-magnification (1000X-5400X) EBIC micrographs of several specific defect structures were obtained. Comparison of grown-in and stress-induced dislocations after annealing in vacuum at 500 C revealed that stress-induced dislocations are hydrogenated to a much greater degree than grown-in dislocations. The theoretical approximations used to predict EBIC contrast and resolution may not be entirely adequate to describe them under high beam energy and low beam current conditions.

Sullivan, T.↗

Angular and Energy Dependence of Proton Upset in Optocouplers

Proton upset effects in optocouplers were reported by LaBel, et al. that showed an unexpected increase in cross section for incident angles above 80 degrees. Although it appeared that the angular dependence was related to direct ionization from protons, the angular dependence was weaker than expected from basic geometrical arguments using a shallow charge collection depth. Later work showed that the angular dependence of proton upset observed in the earlier studies at a single energy could be explained by considering the distribution of proton recoil energies along with the assumption of a deeper charge collection depth, which was consistent with upset tests from heavy ions. However, an experimental test of the underlying assumptions in the latter work has yet to be done. Protons in space not only arrive over a wide range of incident angles, but also involve a distribution of proton energies. It is necessary to understand both the angular dependence and the dependence of proton upset on energy in order to determine how optocouplers will respond in space. If the angular dependence only occurs for extreme angles of incidence, it will have little impact on the overall cross section because of the narrow acceptance angle. The present work examines mechanisms for proton upset in optocouplers in more detail, investigating the energy dependence and the effects of different load conditions. A model for proton upset is developed, along with a laboratory screening method to determine whether direct ionization is significant for specific device types.

Johnston, A. H.↗

Performance characteristics of STIS detectors

We report quantum efficiency measurements of back-illuminated, ion-implanted, laser-annealed charge coupled devices (CCD's) in the wavelength range 13-10,000 A. The equivalent quantum efficiency (EQE = effective photons detected per incident photon) ranges from a minimum of 5 percent as 1216 A to a maximum of 87 percent at 135 A. Using a simple relationship for the charge collection efficiency of the CCD pixels as a function of depth, we present a semi-empirical model with few parameters which reproduces our measurements with a fair degree of accuracy. The advantage of this model is that is can be used to predict CCD QE performance for shallow backside implanted devices without detailed solution of a system of differential equations, as in conventional approaches, and yields a simple analytic form for the charge collection efficiency which is adequate for detector calibration purposes. Making detailed assumptions about the dopant profile, we also solve the carrier density and continuity equations in order to relate our semi-empirical model parameters to surface and bulk device properties. The latter procedure helps to better establish device processing parameters for a given level of CCD QE performance.

Stern, Robert A.↗

Space experiments with particle accelerators (SEPAC): Description of instrumentation

SEPAC (Space Experiments with Particle Accelerators) flew on Spacelab 1 (SL 1) in November and December 1983. SEPAC is a joint U.S.-Japan investigation of the interaction of electron, plasma, and neutral beams with the ionosphere, atmosphere and magnetosphere. It is scheduled to fly again on Atlas 1 in August 1990. On SL 1, SEPAC used an electron accelerator, a plasma accelerator, and neutral gas source as active elements and an array of diagnostics to investigate the interactions. For Atlas 1, the plasma accelerator will be replaced by a plasma contactor and charge collection devices to improve vehicle charging meutralization. This paper describes the SEPAC instrumentation in detail for the SL 1 and Atlas 1 flights and includes a bibliography of SEPAC papers.

Taylor, W. W. L.↗

Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

Marshall, Paul W.↗

The contribution of diffusion to device upset cross sections

A novel technique incorporating carrier recombination, for determining the charge collection efficiency funcition is presented and applied to a realistic, 3-D, memory device to obtain the upset cross section as a function of LET and orientation of incidence.

charge collection diffusion SEU↗

An acoustic charge transport imager for high definition television applications

The primary goal of this research is to develop a solid-state television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels/frame. This imager will offer an order of magnitude improvements in speed over CCD designs and will allow for monolithic imagers operating from the IR to UV. The technical approach of the project focuses on the development of the three basic components of the imager and their subsequent integration. The camera chip can be divided into three distinct functions: (1) image capture via an array of avalanche photodiodes (APD's); (2) charge collection, storage, and overflow control via a charge transfer transistor device (CTD); and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the optimization of each of these component devices. In addition to the development of each of the three distinct components, work towards their integration and manufacturability is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail.

Hunt, W. D.↗

An acoustic charge transport imager for high definition television applications

The primary goal of this research is to develop a solid-state high definition television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels per frame. This imager offers an order of magnitude improvement in speed over CCD designs and will allow for monolithic imagers operating from the IR to the UV. The technical approach of the project focuses on the development of the three basic components of the imager and their integration. The imager chip can be divided into three distinct components: (1) image capture via an array of avalanche photodiodes (APD's), (2) charge collection, storage and overflow control via a charge transfer transistor device (CTD), and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the development of manufacturable designs for each of these component devices. In addition to the development of each of the three distinct components, work towards their integration is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail in Sections 2-4.

Hunt, W. D.↗

Backside charging of the CCD

Until recently, the usefulness of the charge coupled device (CCD) as an imaging sensor was thought to be restricted to within rather narrow boundaries of the visible and near IR spectrum. However, since the discovery of backside charging the full potential of CCD performance is now realized. Indeed, the technique of backside charging not only allows the CCD to be used directly in the UV, EUV, and soft X-ray regimes, it has opened up new opportunities in optimizing charge collection processes as well. The technique of backside charging is discussed, and its properties, use, and potential in the future as it applies to the CCD are described.

Janesick, J.↗

Effects of neutral gas release on current collection during the CHARGE-2 rocket experiment

Observations of current collection enhancements due to cold nitrogen gas control jet emissions from a highly charged rocket payload in the ionosphere are reported. These observations were made during the second cooperative high altitude rocket gun experiment (CHARGE-2) which was an electrically tethered mother/daughter payload system. The current collection enhancement was observed at the daughter payload located 100 to 400 m away from the mother which was firing an energetic electron beam. The authors interpret these results in terms of an electrical discharge forming in close proximity to the daughter during the short periods of gas emission. The results indicate that it is possible to enhance the electron current collection capability of positively charged vehicles by means of deliberate neutral gas releases into an otherwise undisturbed space plasma. These results can also be compared with recent laboratory observations of hollow cathode plasma contactors operating in the ignited mode. Experimental observations of current collection enhancements due to cold nitrogen gas control jet emissions from a highly charged, isolated daughter payload in the nighttime ionosphere were made. These observations were derived from the second cooperative high altitude rocket gun experiment (CHARGE-2) which was an electrically tethered mother-daughter payload system. The rocket flew from White Sands Missile Range (WSMR) in December, 1985. The rocket achieved an altitude of 261 km and carried a 1 keV electron beam emitting up to 48 mA of current (Myers, et al., 1989a). The mother payload, carried the electron beam source, while the daughter acted as a remote current collection and observation platform and reached a distance of 426 m away from the main payload. Gas emissions at the daughter were due to periodic thruster jet firings to maintain separation velocity between the two payloads.

Gilchrist, B. E.↗