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Resolution of neutron radiographic images of thermally conductive film is increased by replacing approximately 5 percent of aluminum powder, which provides thermal conductivity, with gadolinium oxide. Oxide is also chemically stable.
Experiments show electrically conductive films are deposited on glassy carbon or indium tin oxide substrates by electrochemical polymerization of N-{(3-trimethoxy silyl) propyl} pyrrole or copolymerization with pyrrole. Copolymers of monomer I and pyrrole exhibit desired electrical conductivity as well as desired adhesion and other mechanical properties. When fully developed, new copolymerization process useful in making surface films of selectable conductivity.
An overview is given of seven process development activities which were presented at this session. Pulsed excimer laser processing of photovoltaic cells was presented. A different pulsed excimer laser annealing was described using a 50 w laser. Diffusion barrier research focused on lowering the chemical reactivity of amorphous thin film on silicon. In another effort adherent and conductive films were successfully achieved. Other efforts were aimed at achieving a simultaneous front and back junction. Microwave enhanced plasma deposition experiments were performed. An updated version of the Solar Array Manufacturing Industry Costing Standards (SAMICS) was presented, along with a life cycle cost analysis of high efficiency cells. The last presentation was on the evaluation of the ethyl vinyl acetate encapsulating system.
Polycrystalline cadmium sulfide (CdS) films were deposited on lithium niobate (LiNbO3) substrates by vacuum evaporation and annealed to obtain high photosensitivity. The change in photoconductivity of these films due to the penetration of electric fields associated with elastic waves propagating on their substrates was demonstrated and studied. The relationship between the acoustic electric field and the induced change in film conductivity was found to be a nonlinear one. The fractional change in conductivity is strongly dependent on the light intensity and the film temperature, showing a prominent maximum as a function of these quantities. The largest recorded fractional change in conductivity was about 25% at electric fields of the order of 1,000 volts per centimeter. A phenomological model was developed based on the interaction between the space charge created by the electric field and the electron trapping states in the photoconductor.
The objective of this research is to use a combination of carbon nanotubes and silicon-based microfabrication and micromachining processes to produce unique micro-sized chemical and gaseous sensors. Polished quartz substrate is used. Interdigitated structure is used for the sensing elements. Metallic catalysts for the growth of the carbon nanotube include copper, iron, nickel, and cobalt. Various thicknesses of the metallic catalysts are used in this study varying between 5 to 20 microns. Depositing of the metallic catalyst is accomplished using an ion-beam sputtering thin film technique and a shadow mask. Single wall carbon nanotubes are successfully formed over the metallic catalyst layer. Preliminary measurements of the carbon nanotubes show this nanotube contained film over the sensing elements which had a resistance value of 400 ohms at room temperature. This is a more conductive film comparing to metal oxide films, such as SnO2 or ZnO, that are now widely used in gaseous sensor research. Evaluation of the carbon nanotube film for potential gaseous sensing will be carried out.
Electrical conductivity of thin metallic films with two surfaces having different probabilities of specular scattering
Conducting layer prevents static charges from accumulating during implantation of silicon-on-sapphire MOS structures. Either thick conducting film or thinner film transparent to ions is deposited prior to implantation, and gaps are etched in regions to be doped. Grounding path eliminates charge flow that damages film or cracks sapphire wafer. Prevention of charge buildup by simultaneously exposing structure to opposite charges requires equipment modifications less practical and more expensive than deposition of conducting layer.
Breakdown conduction in thin film dielectrics of silicon oxide, magnesium fluoride, calcium fluoride, cesium oxides, cesium fluorides, and Teflon
A high conductivity, n-doped semiconductor film is produced from zinc, or Zn and Cd, and group VI elements selected from Se, S and Te in a reactive magnetron sputtering system having a chamber with one or two targets, a substrate holder, means for heating the substrate holder, and an electric field for ionizing gases in the chamber. Zinc or a compound of Zn and Cd is placed in the position of one of the two targets and doping material in the position of the other of the two targets. Zn and Cd may be placed in separate targets while a dopant is placed in the third target. Another possibility is to place an alloy of Zn and dopant, or Zn, Cd and dopant in one target, thus using only one target. A flow of the inert gas is ionized and directed toward said targets, while a flow of a reactant gas consisting of hydrides of the group VI elements is directed toward a substrate on the holder. The targets are biased to attract negatively ionized inert gas. The desired stochiometry for high conductivity is achieved by controlling the temperature of the substrate, and partial pressures of the gases, and the target power and total pressure of the gases in the chamber.
If thin film cells are to be considered a viable option for terrestrial power generation their reliability attributes will need to be explored and confidence in their stability obtained through accelerated testing. Development of a thin film accelerated test program will be more difficult than was the case for crystalline cells because of the monolithic construction nature of the cells. Specially constructed test samples will need to be fabricated, requiring committment to the concept of accelerated testing by the manufacturers. A new test schedule appropriate to thin film cells will need to be developed which will be different from that used in connection with crystalline cells. Preliminary work has been started to seek thin film schedule variations to two of the simplest tests: unbiased temperature and unbiased temperature humidity. Still to be examined are tests which involve the passage of current during temperature and/or humidity stress, either by biasing in the forward (or reverse) directions or by the application of light during stress. Investigation of these current (voltage) accelerated tests will involve development of methods of reliably contacting the thin conductive films during stress.
Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Omega x cm.
A device and method are provided for measuring the thermal conductivity of rigid or flexible, homogeneous or heterogeneous, thin films between 50 .mu.m and 150 .mu.m thick with relative standard deviations of less than five percent. The specimen is sandwiched between like material, highly conductive upper and lower slabs. Each slab is instrumented with six thermocouples embedded within the slab and flush with their corresponding surfaces. A heat source heats the lower slab and a heat sink cools the upper slab. The heat sink also provides sufficient contact pressure onto the specimen. Testing is performed within a vacuum environment (bell-jar) between 10.sup.-3 to 10.sup.-6 Torr. An anti-radiant shield on the interior surface of the bell-jar is used to avoid radiation heat losses. Insulation is placed adjacent to the heat source and adjacent to the heat sink to prevent conduction losses. A temperature controlled water circulator circulates water from a constant temperature bath through the heat sink. Fourier's one-dimensional law of heat conduction is the governing equation. Data, including temperatures, are measured with a multi-channel data acquisition system. On-line computer processing is used for thermal conductivity calculations.
Water film conductance feasibility studies for use in semiconductor device pre-screening
A pulsed metallic-plasma generator is described which utilizes a vacuum arc as the plasma source. The arc is initiated on the surface of a consumable cathode which can be any electrically conductive material. Ignition is accomplished by using a current pulse to vaporize a portion of a conductive film on the surface of an insulator separating the cathode from the ignition electrode. The film is regenerated during the ensuing arc. Over 100 million ignition cycles have been accomplished by using four 0.125-in. diameter zinc cathodes operating in parallel and high-density aluminum-oxide insulators. Among the applications being investigated for the generator are metal deposition, vacuum pumping, electric propulsion, and high-power dc arc interruption.
Coil etched from conductive film has better field uniformity than wire-wound coils and less coil loss at high-frequency operation.
The results of three experimental studies related to the inorganic/organic battery separator operating mechanism are described: saponification of the plasticizer, resistivity of the simulated separators, and zincate diffusion through the separators. The inorganic/organic separator appears to be a particular example of a general class of ionic conducting films composed of inorganic fillers and/or substrates bonded together by an organic polymer containing an incompatible plasticizer that may be leached by the electrolyte. The I/O separator functions as a microporous film of varying tortuosity with essentially no specific chemical inhibition to zincate diffusion.
Theoretical aspects of electrostatic control and design of gridded and conductive film bonded polymers, for spacecraft Thermo-optical blankets are considered. Brief commentaries relative to the salient features of the primarily developed facility for and characterization of said polymers is also considered.
The fabrication and operation of membrane switches are discussed. The membrane switch functions as a normally open, momentary contact, low-voltage pressure-sensitive device. Its design is a three-layer sandwich usually constructed of polyester film. Conductive patterns are deposited onto the inner side of top and bottom sheets by silk screening. The center spacer is then placed between the two circuit layers to form a sandwich, generally held together by an adhesive. When pressure is applied to the top layer, it flexes through the punched openings of the spacer to establish electrical contact between conductive pads of the upper and lower sheets, momentarily closing the circuit. Upon release of force the top sheet springs back to its normal open position. The membrane touch switch is being used in a rapidly expanding range of applications, including instrumentation, appliances, electronic games and keyboards. Its board acceptance results from its low cost, durability, ease of manufacture, cosmetic appeal and design flexibility. The principal electronic components in the membrane switch are the conductor and dielectric.