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NASA NTRS1972

Miniature biotelemeter giving 10 channels of wideband biomedical data.

A miniature biotelemeter has been developed for sensing and transmitting multiple channels of wideband biomedical data over a radio link. Its small size and weight make it capable of being carried by free-moving laboratory animals as small as rats. Ten data channels each of 5-kHz data bandwidth are provided to permit monitoring of a wide variety of physiological signals. Multichannel telemetry of electroencephalograms, electrocardiograms, electromyograms, state functions, and dynamic processes such as blood flow and body chemistry are possible applications. Utilization of newly available monolithic chip components, low-power COS/MOS MSI digital logic, and state-of-the-art hybrid mounting techniques makes this novel device useful for both research and clinical bioinstrumentation.

Carraway, J.↗

NASA NTRS1997

Fundamental Hardware Design in PVS

The development of Programmable Logic Devices (PLDs) has introduced programming as a primary tool in the development of digital circuits. This work attempts to create a generic verification environment in which designs can be specified and verified using the Prototype Verification System (PVS). This is accomplished by providing library support for general hardware constructs. The environment is intended for use with any PLD and any PLD programming language. The goal of the environment is to allow the easy translation of digital designs to PVS and provide sufficient support to make verification possible without a great deal of effort.

Leathrum, James F., Jr.↗

NASA NTRS2009

Measurement and Analysis of a Ferroelectric Field-Effect Transistor NAND Gate

Previous research investigated expanding the use of Ferroelectric Field-Effect Transistors (FFET) to other electronic devices beyond memory circuits. Ferroelectric based transistors possess unique characteris tics that give them interesting and useful properties in digital logic circuits. The NAND gate was chosen for investigation as it is one of the fundamental building blocks of digital electronic circuits. In t his paper, NAND gate circuits were constructed utilizing individual F FETs. N-channel FFETs with positive polarization were used for the standard CMOS NAND gate n-channel transistors and n-channel FFETs with n egative polarization were used for the standard CMOS NAND gate p-chan nel transistors. The voltage transfer curves were obtained for the NA ND gate. Comparisons were made between the actual device data and the previous modeled data. These results are compared to standard MOS logic circuits. The circuits analyzed are not intended to be fully opera tional circuits that would interface with existing logic circuits, bu t as a research tool to look into the possibility of using ferroelectric transistors in future logic circuits. Possible applications for th ese devices are presented, and their potential benefits and drawbacks are discussed.

Phillips, Thomas A.↗

NASA NTRS1991

A video event trigger for high frame rate, high resolution video technology

When video replaces film the digitized video data accumulates very rapidly, leading to a difficult and costly data storage problem. One solution exists for cases when the video images represent continuously repetitive 'static scenes' containing negligible activity, occasionally interrupted by short events of interest. Minutes or hours of redundant video frames can be ignored, and not stored, until activity begins. A new, highly parallel digital state machine generates a digital trigger signal at the onset of a video event. High capacity random access memory storage coupled with newly available fuzzy logic devices permits the monitoring of a video image stream for long term or short term changes caused by spatial translation, dilation, appearance, disappearance, or color change in a video object. Pretrigger and post-trigger storage techniques are then adaptable for archiving the digital stream from only the significant video images.

Williams, Glenn L.↗

NASA NTRS1966

Digital devices development - Integrated circuits-delay line interface circuitry

Interfacing ultrasonic delay lines in digital systems using integrated circuit logic

INTEGRATED CIRCUIT↗

NASA NTRS1973

Practical applications of digital integrated circuits. Part 3: Practical sequential theory and synchronous circuits

Here, the 7400 line of transistor to transistor logic (TTL) devices is emphasized almost exclusively where hardware is concerned. However, it should be noted that the logic theory contained herein applies to all hardware. Discussed here are synchronous binary UP counters, synchronous DOWN and UP/DOWN counters, integrated circuit counters, shift registers, sequential techniques, and designing sequential counting machines.

Source record↗

NASA NTRS2004

Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Nanofibers

Miranda, Felix A.↗

NASA NTRS2010

Carbon Nanotube-Based Digital Vacuum Electronics and Miniature Instrumentation for Space Exploration

JPL has developed high performance cold cathodes using arrays of carbon nanotube bundles that produce > 15 A/sq cm at applied fields of 5 to 8 V/micron without any beam focusing. They have exhibited robust operation in poor vacuums of 10(exp -6) to 10(exp -4) Torr- a typically achievable range inside hermetically sealed microcavities. Using these CNT cathodes JPL has developed miniature X-ray tubes capable of delivering sufficient photon flux at acceleration voltages of <20kV to perform definitive mineralogy on planetary surfaces; mass ionizers that offer two orders of magnitude power savings, and S/N ratio better by a factor of five over conventional ionizers. JPL has also developed a new class of programmable logic gates using CNT vacuum electronics potentially for Venus in situ missions and defense applications. These digital vacuum electronic devices are inherently high-temperature tolerant and radiation insensitive. Device design, fabrication and DC switching operation at temperatures up to 700 C are presented in this paper.

Carbon Nanotube↗

NASA NTRS2004

Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Nanofibers

Novel translators and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. Furthermore, the ability to form devices on flexible substrates expands the range of applications where electronic circuitry can be introduced. For NASA, nonotechndogy offers opportunities for increased onboard data processing and thus autonomous decision-making ability, ad novel sensors that detect and respond to external stimuli with few oversight requirements. The goat of this work is to demonstrate transistor behavior in polyaniline/ polyethylene oxide nanofibers, thus creating a foundation for future logic devices.

Miranda, Felix A.↗

NASA NTRS1980

Independent synchronizer for digital decoders

Logic circuit synchronizes branches of any convolution code-decoder at low signal to noise ratios. Parity checks determine correct node synchronization. Device maintains synchrony as low as -3 dB. Circuit consists of 15 stage shift register, three up down counters, and some logic gates.

Stiffler, J. J.↗

NASA NTRS1966

New television camera eliminates vidicon tube

Small, lightweight camera systems use solid state imaging devices in the form of phototransistor mosaic sensors instead of vidicon tubes for light sensing and image conversion. The digital logic circuits scan the sensor mosaic at 60 frames per second to produce pictures composed of a series of dots rather than lines.

Source record↗

NASA NTRS1972

Practical applications of digital integrated circuits. Part 2: Minimization techniques, code conversion, flip-flops, and asynchronous circuits

Here, the 7400 line of transistor to transistor logic (TTL) devices is emphasized almost exclusively where hardware is concerned. However, it should be pointed out that the logic theory contained herein applies to all hardware. Binary numbers, simplification of logic circuits, code conversion circuits, basic flip-flop theory, details about series 54/7400, and asynchronous circuits are discussed.

Source record↗

NASA NTRS1973

Ferrite logic reliability study

Development and use of digital circuits called all-magnetic logic are reported. In these circuits the magnetic elements and their windings comprise the active circuit devices in the logic portion of a system. The ferrite logic device belongs to the all-magnetic class of logic circuits. The FLO device is novel in that it makes use of a dual or bimaterial ferrite composition in one physical ceramic body. This bimaterial feature, coupled with its potential for relatively high speed operation, makes it attractive for high reliability applications. (Maximum speed of operation approximately 50 kHz.)

Baer, J. A.↗

NASA NTRS1994

VLSI-based Video Event Triggering for Image Data Compression

Long-duration, on-orbit microgravity experiments require a combination of high resolution and high frame rate video data acquisition. The digitized high-rate video stream presents a difficult data storage problem. Data produced at rates of several hundred million bytes per second may require a total mission video data storage requirement exceeding one terabyte. A NASA-designed, VLSI-based, highly parallel digital state machine generates a digital trigger signal at the onset of a video event. High capacity random access memory storage coupled with newly available fuzzy logic devices permits the monitoring of a video image stream for long term (DC-like) or short term (AC-like) changes caused by spatial translation, dilation, appearance, disappearance, or color change in a video object. Pre-trigger and post-trigger storage techniques are then adaptable to archiving only the significant video images.

Williams, Glenn L.↗

NASA NTRS1972

Digital Holographic Logic

The characteristics of the holographic logic computer are discussed. The holographic operation is reviewed from the Fourier transform viewpoint, and the formation of holograms for use in performing digital logic are described. The operation of the computer with an experiment in which the binary identity function is calculated is discussed along with devices for achieving real-time performance. An application in pattern recognition using neighborhood logic is presented.

Preston, K., Jr.↗

DOE OSTI2023

A nanocryotron memory and logic family

The development of superconducting electronics based on nanocryotrons has been limited so far to few device circuits, in part due to the lack of standard and robust logic cells. Here, we introduce and experimentally demonstrate designs for a set of nanocryotron-based building blocks that can be configured and combined to implement memory and logic functions. The devices were fabricated by patterning a single superconducting layer of niobium nitride and measured in liquid helium on a wide range of operating points. The tests show 10 - 4 bit error rates with above ± 20 % margins up to 50 MHz and the possibility of operating under the effect of an out-of-plane 36 mT magnetic field, with ± 30 % margins at 10 MHz. Additionally, we designed and measured an equivalent delay-flip-flop made of two memory cells to show the possibility of combining multiple building blocks to make larger circuits. These blocks may constitute a solid foundation for the development of nanocryotron logic circuits and finite-state machines with potential applications in the integrated processing and control of superconducting nanowire single-photon detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS2007

G4-FETs as Universal and Programmable Logic Gates

An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

Johnson, Travis↗

NASA NTRS2004

Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Demonstrated

Novel transistors and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low-power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. For NASA applications, nanotechnology offers tremendous opportunities for increased onboard data processing, and thus autonomous decisionmaking ability, and novel sensors that detect and respond to environmental stimuli with little oversight requirements. Polyaniline/polyethylene oxide (PANi/PEO) nanofibers are of interest because they have electrical conductivities that can be changed from insulating to metallic by varying the doping levels and conformations of the polymer chain. At the NASA Glenn Research Center, we have observed field effect transistor (FET) behavior in electrospun PANi/PEO nanofibers doped with camphorsulfonic acid. The nanofibers were deposited onto Au electrodes, which had been prepatterned onto oxidized silicon substrates. The preceding scanning electron image shows the device used in the transistor measurements. Saturation channel currents are observed at surprisingly low source/drain voltages (see the following graph). The hole mobility in the depletion regime is 1.4x10(exp -4)sq cm/V sec, whereas the one-dimensional charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx.10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating one-dimensional polymer FET's.

Mueller, Carl H.↗