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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon

Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities.

Swirhun, S. E.↗
NASA NTRS1986

Toward a systematic design theory for silicon solar cells using optimization techniques

This work is a first detailed attempt to systematize the design of silicon solar cells. Design principles follow from three theorems. Although the results hold only under low injection conditions in base and emitter regions, they hold for arbitrary doping profiles and include the effects of drift fields, high/low junctions and heavy doping concentrations of donor or acceptor atoms. Several optimal designs are derived from the theorems, one of which involves a three-dimensional morphology in the emitter region. The theorems are derived from a nonlinear differential equation of the Riccati form, the dependent variable of which is a normalized recombination particle current.

Misiakos, K.↗
NASA NTRS1987

Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperature

A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 microW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (about 1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2 x 10 to the 17th/cu cm doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.

Brown, E. R.↗
NASA NTRS1987

Development of 8 cm x 8 cm silicon gridded back solar cell for space station

The 8-cm x 8-cm gridded back cell being developed for the space station photovoltaic array is described. Modeling studies show that the beginning of life power output of 1.039 W per cell may be met by several different configurations, the most promising being either a fielded or nonfielded 2 ohm-cm planar 8-mil cell. Experimental data are presented which show that a thermal alpha of 0.63 is achievable on a planar cell but at the expense of some Isc. Planar cells are found to possess short-circuit currents which are 9 percent lower than on textured cells due to the loss of near-IR radiation by transmission through the cell. Preliminary modeling shows that the efficiency of the textured cell exceeds the planar cell by approximately 9 percent at 25 C but the situation is reversed in orbit due to the high thermal alpha of textured cells (0.82). Experimental data show that the IR absorption in textured cells can be reduced by about 3 alpha points without loss of efficiency by controlling the doping concentration in the diffused layers, thus increasing the efficiency in orbit.

Lillington, D. R.↗
NASA NTRS1990

Intersubband absorption in Si(1-x)Ge(x/Si superlattices for long wavelength infrared detectors

Researchers calculated the absorption strengths for intersubband transitions in n-type Si(1-x)Ge(x)/Si superlattices. These transitions can be used for the detection of long-wavelength infrared radiation. A significant advantage in Si(1-x)Ge(x)/Si supperlattice detectors is the ability to detect normally incident light; in Ga(1-x)Al(x)As/GaAs superlattices, intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. Researchers present detailed calculation of absorption coefficients, and peak absorption wavelengths for (100), (111) and (110) Si(1-x)Ge(x)/Si superlattices. Peak absorption strengths of about 2000 to 6000 cm(exp -1) were obtained for typical sheet doping concentrations (approx. equals 10(exp 12)cm(exp -2)). Absorption comparable to that in Ga(1-x)Al(x)As/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.

Rajakarunanayake, Yasantha↗
NASA NTRS1990

Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long wavelength infrared detectors

There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 microns which operate with close-cycle cryocoolers above 65 K. In addition, it would be very attractive to have Si-based infrared (IR) detectors that can be easily integrated with Si readout circuitry and have good pixel-to-pixel uniformity, which is critical for focal plane array (FPA) applications. Here, researchers report a novel Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) detector approach with a tailorable long wavelength infrared cutoff wavelength, based on internal photoemission over the Si(1-x)Ge(x)/Si heterojunction. The HIP detectors were grown by molecular beam epitaxy (MBE), which allows one to optimize the device structure with precise control of doping profiles, layer thickness and composition. The feasibility of a novel Si(1-x)Ge(x)/Si HIP detector has been demonstrated with tailorable cutoff wavelength in the LWIR region. Photoresponse at wavelengths 2 to 10 microns are obtained with quantum efficiency (QE) above approx. 1 percent in these non-optimized device structures. It should be possible to significantly improve the QE of the HIP detectors by optimizing the thickness, composition, and doping concentration of the Si(1-x)Ge(x) layers and by configuring the detector for maximum absorption such as the use of a cavity structure. With optimization of the QE and by matching the barrier energy to the desired wavelength cutoff to minimize the thermionic current, researchers predict near background limited performance in the LWIR region with operating temperatures above 65K. Finally, with mature Si processing, the relatively simple device structure offers potential for low-cost producible arrays with excellent uniformity.

Lin, T. L.↗
NASA NTRS1990

Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.

Bhimnathwala, H. G.↗
NASA NTRS1992

Temperature independent quantum well FET with delta channel doping

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.

Young, P. G.↗
NASA NTRS1983

Neutron transmutation doped Ge bolometers

Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

Haller, E. E.↗
NASA NTRS1997

Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

Tabib-Azar, Massood↗
NASA NTRS1994

Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

Wang, Yang↗
NASA NTRS2005

Process Developed for Generating Ceramic Interconnects With Low Sintering Temperatures for Solid Oxide Fuel Cells

Solid oxide fuel cells (SOFCs) have been considered as premium future power generation devices because they have demonstrated high energy-conversion efficiency, high power density, and extremely low pollution, and have the flexibility of using hydrocarbon fuel. The Solid-State Energy Conversion Alliance (SECA) initiative, supported by the U.S. Department of Energy and private industries, is leading the development and commercialization of SOFCs for low-cost stationary and automotive markets. The targeted power density for the initiative is rather low, so that the SECA SOFC can be operated at a relatively low temperature (approx. 700 C) and inexpensive metallic interconnects can be utilized in the SOFC stack. As only NASA can, the agency is investigating SOFCs for aerospace applications. Considerable high power density is required for the applications. As a result, the NASA SOFC will be operated at a high temperature (approx. 900 C) and ceramic interconnects will be employed. Lanthanum chromite-based materials have emerged as a leading candidate for the ceramic interconnects. The interconnects are expected to co-sinter with zirconia electrolyte to mitigate the interface electric resistance and to simplify the processing procedure. Lanthanum chromites made by the traditional method are sintered at 1500 C or above. They react with zirconia electrolytes (which typically sinter between 1300 and 1400 C) at the sintering temperature of lanthanum chromites. It has been envisioned that lanthanum chromites with lower sintering temperatures can be co-fired with zirconia electrolyte. Nonstoichiometric lanthanum chromites can be sintered at lower temperatures, but they are unstable and react with zirconia electrolyte during co-sintering. NASA Glenn Research Center s Ceramics Branch investigated a glycine nitrate process to generate fine powder of the lanthanum-chromite-based materials. By simultaneously doping calcium on the lanthanum site, and cobalt and aluminum on the chromium site, we could sinter the materials below 1400 C. The doping concentrations were adjusted so that the thermal expansion coefficient matched that of the zirconia electrolyte. Also, the investigation was focused on stoichiometric compositions so that the materials would have better stability. Co-sintering and chemical compatibility with zirconia electrolyte were examined by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy (line scanning and dot map). The results showed that the materials bond well, but do not react, with zirconia electrolyte. The electric conductivity of the materials measured at 900 C in air was about 20 S/cm.

Zhong, Zhi-Min↗
NASA NTRS2006

Single-Frequency Narrow Linewidth 2 Micron Fiber Laser

A compact single frequency, single-mode 2 .mu.m fiber laser with narrow linewidth, <100 kHz and preferably <100 kHz, is formed with a low phonon energy glass doped with triply ionized rare-earth thulium and/or holmium oxide and fiber gratings formed in sections of passive silica fiber and fused thereto. Formation of the gratings in passive silica fiber both facilitates splicing to other optical components and reduces noise thus improving linewidth. An increased doping concentration of 0.5 to 15 wt. % for thulium, holmium or mixtures thereof produces adequate gain, hence output power levels for fiber lengths less than 5 cm and preferably less than 3 cm to enable single-frequency operation.

Jiang, Shibin↗
NASA NTRS2012

Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

linear integrated circuits↗
NASA NTRS2014

Minority Carrier Lifetime Studies of Narrow Bandgap Antimonide Superlattices

In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.

minority carrier lifetime↗
NASA NTRS2016

An Efficient Single Frequency Ho:YLF Laser for IPDA Lidar Applications

A highly efficient, versatile, single frequency 2-micron pulsed laser can be used in a pulsed Differential Absorption Lidar (DIAL) / Integrated Path Differential Absorption (IPDA) instrument to make precise, high-resolution measurements to investigate sources and sinks of CO2. For a direct detection IPDA lidar, the desired 2 m Ho:YLF laser should generate 30-40 mJ pulses at the repetition rate of 100 to 200 Hz, with short pulse length (<100 ns) and better than 2% wall plug efficiency. A Tm fiber laser in-band pumped Ho:YLF laser has been developed to meet this technical challenge. This Ho:YLF laser is designed in a four mirror ring resonator with bow tie configuration, which helps to obtain high beam quality. It is end-pumped by a 40 W linearly polarized Tm fiber laser at 1.94μm. The resonator length is 1.10 meters with output coupler reflectivity at 45%. The laser crystal size is 3 x 3 x 60 mm (w, h, l) with a doping concentration of 0.5% Holmium. The laser beam and pump beam are mode-matched in the active medium. Thus, the pump and laser beams have the same confocal parameters. Mode-matching is also helpful for operating the laser in a single transverse mode. The laser beam waist is slightly less than 0.5 mm at the center of the laser crystal. Based on quasi-four level modeling, pump absorption and saturation depend on laser intensity. Laser amplification and saturation also depend on the pump intensity in the crystal. The laser is injection seeded to obtain the single frequency required by an IPDA lidar measurement. The seed beam is entered into the resonator through an output coupler. The laser is mounted on a water cooled optical bench for stable and reliable operation. The size of the optical bench is 22.16 x 9.20 x 1.25 inches. It is stiffened so that the laser can be operated in any orientation of the optical bench. This packaged Ho:YLF laser is designed for either mobile trailer or airborne platform operation. The engineering prototype Ho:YLF laser has been fully characterized to demonstrate laser performance. Figure 1 shows the laser output power as a function of pump power at different pulse repetition rates from 100 Hz to 333 Hz. The threshold of the laser is less than 14 W. The slope efficiencies are 28%, 40%, 41% and 43% for pulse repetition rates of 100, 200, 250 and 333 Hz, respectively. Maximum power increases with the pulse repetition rate. Output power of 4.2 W, 6 W, 6.7 W, and 7.7 W is achieved for pulse repetition rates of 100, 200, 250 and 333Hz, respectively. This represents the optical conversion efficiency of 16.7%, 22.4%, 23.7%, and 26.5% at these various pulse repletion rates. It is the most efficient and compact Ho:YLF laser demonstrated in the high pulse energy (>20mJ) and moderate pulse repetition rate (100's Hz) operation range. As shown in Figure 1, the maximum pulse energy at 100 Hz is 42 mJ. This is limited due to optical damage. The laser stability is characterized and found to be very stable. A relative pulse energy standard deviation of 2% was measured. The beam quality of the Ho:YLF was measured by a Spiricon infrared laser beam camera. Figure 2 shows the beam profile image of the laser. Both the X-profile of the beam (horizontal direction) and the Y-profile of the beam (vertical direction) are well fitted by a Gaussian profile. The qualitative beam quality measurement shows excellent beam quality in both axis. The M-square value for the laser beam is measured at 1.06 and 1.09 for the x and y axis respectively.-

Yu, J.↗
NASA NTRS2018

Development of High Performance Detector Technology for UV and Near IR Applications

Sensing and imaging for ultraviolet (UV) and nearinfrared (NIR) bands has many applications forNASA, defense, and commercial systems. Recentwork has involved developing UV avalanchephotodiode (UV-APD) arrays with high gain for highresolution imaging. Various GaN/AlGaN p-i-n (PIN)UV-APDs have been fabricated from epitaxialstructures grown by MOCVD on GaN substrates withavalanche gains higher than 5 x 10(exp 5), and significantlyhigher responsivities. Likewise, the SiGe materialsystem allows the demonstration of high-performancedetector array technology that covers the 0.5 to 1.7 mwavelength range for visible and NIR bands ofinterest. We have utilized SiGe fabrication technologyto develop Ge based PIN detector devices on 300 mmSi wafers. We will discuss the theoretical andexperimental results from electrical and opticalcharacterization of the detector devices with variousn+ region doping concentrations to demonstrate low dark currents below 1 uA at -1 V and high photocurrent. Recent results from these detectorarrays for UV and NIR detection will be presented.

IR↗