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At least 55 records · Page 3

Sample environment effects on synchrotron-measured temperature profiles in an approximant of optical floating zone crystal growth

Even though the growth of crystals using optical floating zone furnaces has had an immense scientific impact, the implementation of this method remains more of an art than a science due to the difficulty of obtaining quantitative information about the sample thermal profile during crystal growth. Building on recent work demonstrating that in situ synchrotron studies can be used to map sample rod temperatures during heating, investigations were carried out to better understand how the sample environment affects the sample temperature profile. Through a combination of experimental studies and modeling efforts, it is shown that the environment in the furnace can strongly influence the sample temperature at the lamp focus, the steepness of the vertical temperature gradient, and the timescale required for sample heating and cooling - effects which can combine to produce a strong history-dependence to sample temperature profiles. It is demonstrated that the furnace effects can be effectively captured in thermal models, allowing both the steady-state and time-dependent behavior of the sample to be accurately reproduced with predictive models, and providing a launching point for improved furnace designs that can more readily deliver desired thermal profiles.

36 MATERIALS SCIENCE↗

Float Zone Experiments in Space

The objective of this work has been to evaluate whether or not Marangoni flow could be suppressed in molten metals by the presence of very thin oxide films. Experimental work has been carried out on molten Sn under UHV conditions. A disk floating zone arrangement was developed to allow in situ Auger examination of molten surfaces. An electron energy loss technique was developed which allows detection of continuous tin oxide films of 6 A or greater. Experiments were planned to detect the effects of oxide formation upon Marangoni flow by measuring: (1) temperature profiles, (2) solid liquid interface shapes, (3) macrosegregation, and (4) the onset of oscillatory Marangoni flow by detecting oscillating temperature variations. Work on (4) showed that oscillatory temperature variations of frequency or = 10 Hz were not present in the disk float zone geometry under conditions of Ma = 4300 with an oxide free molten surface. The disk float zone geometry was modeled with a finite element analysis and temperature and velocity profiles were determined.

Verhoeven, J. D.↗

Computer-controlled float zone crystal growth

A PC-based computer control system to automate a high-temperature float zone growth of titanium carbide is reported. The control strategy of the computer control system relies on the relations derived from a combination of empirical relations and results from detailed mathematical analysis of the physical transports of the entire float zone assembly. A system control computer program was written to establish real-time determination of the size of the molten zone from a thermal image, control parameters from established relationships, and collected processed data to achieve control objectives. We found that the developed computer control allows the growth process to be operated nearer the stability limit. Any slight variations in growth conditions can be corrected in time to avoid any instability growth, which otherwise cannot be adjusted via manual control.

Chan, Y. T.↗

Float Zone Workshop

Presentations made on space based float zone crystal growth and melt behavior are summarized and handouts illustrating the presentations are presented.

E. L. Kern↗

Float zone space processing rationale

The role of float zone silicon in integrated circuits is surveyed. The problem of oxygen thermal donors and their inhomogeneous distribution is predicted to be a critical issue.

Jastrzebski, L.↗

Numerical simulations of inductive-heated float-zone growth

The present work provides an improved fluid flow and heat-transfer modeling of float-zone growth by introducing a RF heating model so that an ad hoc heating temperature profile is not necessary. Numerical simulations were carried out to study the high-temperature float-zone growth of titanium carbide single crystal. The numerical results showed that the thermocapillary convection occurring inside the molten zone tends to increase the convexity of the melt-crystal interface and decrease the maximum temperature of the molten zone, while the natural convection tends to reduce the stability of the molten zone by increasing its height. It was found that the increase of induced heating due to the increase of applied RF voltage is reduced by the decrease of zone diameter. Surface tension plays an important role in controlling the amount of induced heating. Finally, a comparison of the computed shape of the free surface with a digital image obtained during a growth run showed adequate agreement.

Chan, Y. T.↗

Stability and instability of thermocapillary convection in models of float-zone crystal growth

The energy-stability theory has been used to study the stability properties of thermocapillary convection in a half-zone model of the float-zone crystal-growth process. It is concluded that the energy theory provides a sufficient condition for stability to disturbances of arbitrary amplitude. Results of the computation of energy-stability limits are found to be in good agreement with experimentally measured bounds for oscillatory thermocapillary convection.

Neitzel, G. P.↗

Energy stability of thermocapillary convection in a model of the float-zone crystal-growth process. II - Nonaxisymmetric disturbances

Energy-stability theory has been applied to investigate the stability properties of thermocapillary convection in a half-zone model of the float-zone crystal-growth process. An earlier axisymmetric model has been extended to permit nonaxisymmetric disturbances, thus determining sufficient conditions for stability to disturbances of arbitrary amplitude. The results for nonaxisymmetric disturbances are compared with earlier axisymmetric results, with linear-stability results for a geometry with an infinitely long aspect ratio and with stability boundaries from recent laboratory experiments.

Neitzel, G. P.↗

Thermocapillary convection in floating zones under simulated reduced-gravity conditions

The present study demonstrated that calculated thermocapillary convection in a non-cylindrical floating zone can now be compared with measured one, by considering the lens effect of the floating zone. Flow visualization and computer simulation of thermocapillary convection in a silicone oil zone and a molten zone in an NaNO3 rod were conducted. The calculated results agree very well with the measured ones, including the free surface shapes, the solid/melt interface shapes and the velocity fields.

Tao, Y.↗

SiC growth by Solvent-Laser Heated Floating Zone

In an effort to grow single crystal SiC fibers for seed crystals the following two growth methods have been coupled in this work: traveling solvent and laser heated floating zone to create the solvent-laser heated floating zone (Solvent-LHFZ) crystal growth method. This paper discusses the results of these initial experiments, which includes: source material, laser heating, and analysis of the first ever Solvent-LHFZ SiC crystals (synchrotron white beam x-ray topography confirmed).

Woodworth, Andrew A.↗

Production of fibers by a floating zone fiber drawing technique

A CO2 laser heated, floating zone fiber growth process was developed. The resulting Al2O3 fibers exhibited the high room temperature strengths for large diameter fibers as well as high specific creep rupture strengths observed at 1093 C and 1316 C (2000 F and 2400 F). Single crystal fibers of TiC and Y2O3 were also grown. An optical system was developed to focus four CO2 laser beams onto the surface of a feed rod permitting the formation of highly controllable molten zones. The optical system permitted energy densities and angle of incidence of the beams to be adjusted over wide ranges. This optical system was incorporated into a controlled atmosphere, fiber growth furnace. The two principal advantages of a CO2 laser heat source are that ambient atmospheres may be freely selected to optimize fiber properties and the laser has no inherent temperature limit, so extremely high melting point materials can be melted. Both advantages were demonstrated.

Haggerty, J. S.↗

Non-contaminating method to reduce Marangoni convection in microgravity float zones

A ground-based experiment has validated the effectiveness of a noncontaminating method developed to reduce Marangoni (thermal capillary) convection in float-zone processing of corrosive materials in space microgravity. A drop of silicone oil 1.5 mm high was enclosed in a transparent box, and the small size of the drop was shown to suppress the 1-g thermal-buoyant convection. A vertical jet of air was blown tangentially over a vertical free surface, producing a viscous shear drag which opposes the Marangoni surface shear. A 66 percent reduction in Marangoni velocities was found in the lowest one-third of the drop, corresponding to the resolidification surface in a float-zone melt.

Dressler, R. F.↗

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36

Several earlier (micro)g experiments have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed on the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Maran-goni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies f? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗

Coupled CVD and Float Zone Reactor for Lower Cost, Higher Efficiency Si Boules (Final Technical Report)

This project modeled a new type of photovoltaic (PV) Si production reactor with the promise to reduce the cost, increase the efficiency, and reduce the energy required to manufacture Si wafers. The production of photovoltaic (PV) grade Si is well established, based on the pulling of single crystalline Si boules from polycrystalline Si created from trichlorosilane using the Siemens process. However, these processes are very energy intensive, and manufacturing of PV Si occurs almost entirely in China. To disrupt this paradigm and on-shore production of this critical material and provide benefits to the public, a substantial technological leap is required to move past incumbent technology. This study evaluated a new float zone chemical vapor deposition (Fz-CVD) concept in which trichlorosilane (TCS), the feedstock for polysilicon in the Siemens process, is injected directly into a float zone crystallizer to continuously deposit the feed rod for the boule pulling process through a combination of multiphysics modeling and technoeconomic analysis.

14 SOLAR ENERGY↗

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36

Several pg experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone Under Microgravity

USA Several microgravity experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4 mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies ? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗

Detached and Floating-Zone Growth of Semiconductor Crystals on the ISS

Understanding the mechanism of detached Bridgman growth and establishing the growth of large scale germanium-silicon crystals by the float-zone technique are the key points of the project "RDGS - Reduction of Defects in Germanium-Silicon". The contact angle of the melt and the growth angle of the crystal are essential parameters which allow a controlled use of detached growth. The contact angle was determined for a variety of different substrates and melt compositions; pBN showed the highest value for pure germanium as well as for germanium-rich GeSi melts. The growth angle of Ge(sub 0.95) Si(sub 0.05) was measured to be 8.5-10.5 degrees which concurs with the values of pure germanium and silicon, respectively. The temperature dependence and the concentration dependence of the surface tension were determined for concentrations up to 10at% silicon (partial derivative (gamma)/partial derivative T=-0.08 (raised dot) 10(exp -3)N/m (raised dot) K, partial derivative (gamma)/partial derivative (C)=2.2 (raised dot) 10(exp -3)N/m (raised dot) at%). Using these values, the critical Marangoni number indicating the transition to time-dependent thermocapillary flow will be exceeded for the growth of large scale float-zone crystals onboard the ISS. Therefore, suitable tools for flow control are required.

Dold, P.↗