Necessary conditions for joining optimal singular and nonsingular subarcs
Continuity and smoothness properties of piecewise optimal control at junction between singular and nonsingular subarcs, developing necessary conditions
Mcdanell, J. P.↗
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Electromagnetic scattering from two-dimensional thick material junctions
The problem of the plane wave diffraction is examined by an arbitrary symmetric two dimensional junction, where Generalized Impedance Boundary Conditions (GIBCs) and Generalized Sheet Transition Conditions (GSTCs) are employed to simulate the slabs. GIBCs and GSTCs are constructed for multilayer planar slabs of arbitrary thickness and the resulting GIBC/GSTC reflection coefficients are compared with exact counterparts to evaluate the GIBCs/GSTCs. The plane wave diffraction by a multilayer material slab recessed in a perfectly conducting ground plane is formulated and solved via the Generalized Scattering Matrix Formulation (GDMF) in conjunction with the dual integral equation approach. Various scattering patterns are computed and validated with exact results where possible. The diffraction by a material discontinuity in a thick dielectric/ferrite slab is considered by modelling the constituent slabs with GSTCs. A non-unique solution in terms of unknown constants is obtained, and these constants are evaluated for the recessed slab geometry by comparison with the solution obtained therein. Several other simplified cases are also presented and discussed. An eigenfunction expansion method is introduced to determine the unknown solution constants in the general case. This procedure is applied to the non-unique solution in terms of unknown constants; and scattering patterns are presented for various slab junctions and compared with alternative results where possible.
Ricoy, M. A.↗
Performance of candidate SEPS solar cells as a function of low temperature and low intensity exposure and 1 MeV electron irradiation
The behavior of 144 high-performance shallow-junction silicon solar cells under conditions of low temperature and intensity was examined. The cells represented nine combinations of thickness, base resistivity, front surface texture, and rear surface treatment. At least 16 cells of each type were individually tested both as active elements under light levels between 0.04 and 1.0 solar constant and in the dark as passive rectifiers under external forward bias. One cell type was also irradiated with 1 MeV electrons up to 2.7 x 10 to the 15th e/sq cm. The inferior cells demonstrated high ohmic and/or non-ohmic shunting. No series resistance or Schottky barrier effects were observed. Fluences beyond 10 to the 13th e/sq cm lowered cell current, probably by increasing volume recombination.
Whitaker, A. F.↗
The Performance of Advanced III-V Solar Cells
Test results show triple junction solar cells with efficiencies as high as 27% at 28C and 136.7 mw/sq cm. Triple junction cells also achieve up to 27.5% at -120 C and 5 mw/sq cm, conditions applicable to missions to Jupiter. Some triple junction cells show practically no degradation as a result of Low Intensity Low Temperature (LILT) effects, while others show some; this degradation can be overcome with minor changes to the cell design.
Mueller, Robert L.↗
Operando Temperature Measurements of Photovoltaic Laser Power Converter Devices Under Continuous High-Intensity Illumination
Photovoltaic devices that operate under extremely high irradiances, such as laser power converters (LPCs), may also operate at elevated temperatures, even under active cooling, as the result of large temperature gradients. We demonstrate the operation of GaAs LPC devices under orders of magnitude of irradiances up to 150 W/cm 2 in a monochromatic laser simulator with an active cooling stage. The steady-state open-circuit voltage (V OC ) as a function of irradiance is known to droop at high irradiance as the result of junction heating, but the junction temperature can be difficult to measure by conventional methods. Fast, transient V OC measurements under these extreme operating conditions are used here to determine the junction temperature. Empirical V OC temperature coefficients of the devices at each irradiance of interest are determined and used as an integral part of this technique. We show that the thermal design of different LPC devices strongly affects the operating temperature of the junctions. Knowledge of the operating temperature can be a strong tool for understanding the nature of loss mechanisms and improving the design for the operation of photovoltaic LPCs at high irradiances. Furthermore, this technique can be used for laboratory devices during initial design as well as to characterize mass-produced and packaged devices for quality control.
14 SOLAR ENERGY↗
Bypass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions
Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with coupon back side thermal conditions of both cold and ambient. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, experiment results, and the thermal model.
Wright, Kenneth H., Jr.↗
The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells
Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.
Fossum, J. G.↗
InP tunnel junction for InGaAs/InP tandem solar cells
Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.
Vilela, M. F.↗
Development of a Robust Reference Electrode in Aggressive Chemical and Radiation Environments in the Hanford Waste Tanks
The Hanford site stores more than 200 million liters of radioactive and chemically hazardous wastes from the production of weapons materials. The wastes are stored in 177 underground carbon-steel storage tanks, separated between 149 single shell tanks (SSTs) and 28 double shell tanks (DSTs). The DSTs provide critical retrieval and interim storage before the waste is vitrified in the Waste Treatment and Isolation Plant (WTP). The tanks will need to remain in-service far beyond the initial 40-year design life, and effective corrosion control practices must remain in force to extend the tanks’ lifespans. This effort includes direct measurements of corrosion rate (e.g., ultrasonic measurements and corrosion coupons) and electrochemical processes (e.g., linear polarization measurements and open circuit potential measurements). The Hanford site began monitoring the corrosion potential in select DSTs in 2008. Of the 45 reference electrodes that have been installed, 29 have failed and 6 others provided unreliable results. DOE-EM is supporting a 3-year program to develop a chemical and radiation resistant reference electrode for application in the Hanford tanks. The first year of the program focused on understanding the failure mechanism for the reference electrodes and identification of candidate construction materials that would mitigate degradation of the electrodes in the waste environment. During the second year of the program, the objectives were to: 1) test candidate materials under simulated waste conditions, 2) design components that will extend the service life of the electrode, 3) fabricate materials for prototype reference electrodes, and 4) assemble prototype reference electrodes for accelerated testing. The reference electrode is constructed of four principal parts: 1) junction, 2) casing, 3) inner chamber backfill materials, and 4) the sensing wire. Principally, improvements of the junction, casing, and inner chamber backfill materials are being pursued. The junction material at the interface between the waste and the inner chamber of the reference electrode was identified as a critical component in the failure of the reference electrodes. Nine candidate replacement junction materials were tested under simulated waste conditions to evaluate permeation rate. These materials included a variety of polymeric and ceramic materials, some of which were 3-D printed. Thus far, porous polyvinylidene fluoride materials have performed satisfactorily and are being considered for prototype development. The commercial electrode casing materials in general have performed well. Additionally, 3-D printing of chemically and mechanically stable materials is being investigated as a means for further improvement in fabrication consistency. SRNL has also investigated altering the reference electrode design to extend the service life. The new design of the interior of the reference electrode casing creates a longer, more tortuous path between the junction material and the electrode sensing wire. A finite element model was used to optimize the design without adversely impacting the circuit resistance of the electrode during the measurements, thus preserving the measurement accuracy while enhancing the service life. The inner chamber back fill materials are also critical to the performance of the reference electrode. Materials that are resistant to intruding tank waste and provide a conductive path to the sensing wire were investigated. Gel and powder materials that are interspersed with a conductive chloride bearing material were tested for their influence on diffusion and electrode resistance. All the investigated materials and components will be assembled, with collaboration from commercial vendors, to fabricate the initial prototypes. Accelerated testing of the prototypes will be initiated in Year 2 of the program and will be completed in Year 3. A recommendation on the materials of construction and the design of the new robust reference electrode will be presented to the Hanford tank farm facility.
Sykes, Kiana [Savannah River National Laboratory (↗
Measuring the Stress Factors for Photovoltaic (PV) Backsheet Degradation
Back sheet failure has resulted in power loss and large-scale recall of photovoltaic modules, resulting in billions of dollars in lost revenue. The light exposure on the backside of a photovoltaic module comes primarily from reflected light which alters the distribution of natural sunlight. Because of this, modelling the backside exposure and duplicating the exposure is much more difficult than modeling the frontside exposure. This project aims to study how various back sheets and junction box materials degrade under different conditions and to develop Python code to help model and predict degradation. The stress factors for back-sheet degradation must be quantified to extrapolate accelerated stress tests to the field. Test samples were placed in the A3, A4, and A5 conditions, as defined in IEC 62788-7-2, to assess the temperature and humidity dependence of ultraviolet (UV) induced degradation. We are utilizing a custom chamber with exposure from 0.5 UV-suns to 5 UV-suns to understand the dependence of degradation on light intensity. A group of samples put in the A3 condition had glass filters with 50% UV cut-offs of 320 nm, 335 nm, and 360 nm to assess the wavelength dependence of UV degradation. All this data is necessary to assess the impact of non-standard UV light exposure. The material evaluation tests include gloss measurements, attenuated total internal reflectance Fourier transform infrared spectroscopy (ATR-FTIR), UV-visible reflectance/transmittance utilizing a Cary Ci7000 spectrophotometer, and a nano-indenter for surface hardness and modulus measurements. Alongside the experimental work, there is a computational effort using raytracing and Python open-source tools in PVDeg , PVLib, and Bifacial_Radiance. This code will create specific exposure scenarios and enable the evaluation of chamber degradation relative to field degradation. Equation 1 is a strawman equation used to model degradation on the backside of a PV module. We will create simplified code, based on the results of ray-tracing calculations, which uses a view factor approach to provide fast calculations for the most common exposure scenarios.
14 SOLAR ENERGY↗
Applications of heat pipes to cool PWBS and hybrid microcircuits
Some of the advanced thermal management techniques used to reduce operating junction temperature under extreme environmental temperature conditions are discussed. Heat pipes in actual electronic packaging applications, and those under development, are discussed. Performance characteristics of heat pipes are given, and examples are described of how thermal problems in electronic packaging are solved through the use of heat pipes.
Sekhon, K. S.↗
Potential Use of a Bayesian Network for Discriminating Flash Type from Future GOES-R Geostationary Lightning Mapper (GLM) data
Continuous monitoring of the ratio of cloud flashes to ground flashes may provide a better understanding of thunderstorm dynamics, intensification, and evolution, and it may be useful in severe weather warning. The National Lighting Detection Network TM (NLDN) senses ground flashes with exceptional detection efficiency and accuracy over most of the continental United States. A proposed Geostationary Lightning Mapper (GLM) aboard the Geostationary Operational Environmental Satellite (GOES-R) will look at the western hemisphere, and among the lightning data products to be made available will be the fundamental optical flash parameters for both cloud and ground flashes: radiance, area, duration, number of optical groups, and number of optical events. Previous studies have demonstrated that the optical flash parameter statistics of ground and cloud lightning, which are observable from space, are significantly different. This study investigates a Bayesian network methodology for discriminating lightning flash type (ground or cloud) using the lightning optical data and ancillary GOES-R data. A Directed Acyclic Graph (DAG) is set up with lightning as a "root" and data observed by GLM as the "leaves." This allows for a direct calculation of the joint probability distribution function for the lighting type and radiance, area, etc. Initially, the conditional probabilities that will be required can be estimated from the Lightning Imaging Sensor (LIS) and the Optical Transient Detector (OTD) together with NLDN data. Directly manipulating the joint distribution will yield the conditional probability that a lightning flash is a ground flash given the evidence, which consists of the observed lightning optical data [and possibly cloud data retrieved from the GOES-R Advanced Baseline Imager (ABI) in a more mature Bayesian network configuration]. Later, actual GLM and NLDN data can be used to refine the estimates of the conditional probabilities used in the model; i.e., the Bayesian network is a learning network. Methods for efficient calculation of the conditional probabilities (e.g., an algorithm using junction trees), finding data conflicts, goodness of fit, and dealing with missing data will also be addressed.
Solakiewiz, Richard↗
Integration of Evidence Base into a Probabilistic Risk Assessment
INTRODUCTION: A probabilistic decision support model such as the Integrated Medical Model (IMM) utilizes an immense amount of input data that necessitates a systematic, integrated approach for data collection, and management. As a result of this approach, IMM is able to forecasts medical events, resource utilization and crew health during space flight. METHODS: Inflight data is the most desirable input for the Integrated Medical Model. Non-attributable inflight data is collected from the Lifetime Surveillance for Astronaut Health study as well as the engineers, flight surgeons, and astronauts themselves. When inflight data is unavailable cohort studies, other models and Bayesian analyses are used, in addition to subject matters experts input on occasion. To determine the quality of evidence of a medical condition, the data source is categorized and assigned a level of evidence from 1-5; the highest level is one. The collected data reside and are managed in a relational SQL database with a web-based interface for data entry and review. The database is also capable of interfacing with outside applications which expands capabilities within the database itself. Via the public interface, customers can access a formatted Clinical Findings Form (CLiFF) that outlines the model input and evidence base for each medical condition. Changes to the database are tracked using a documented Configuration Management process. DISSCUSSION: This strategic approach provides a comprehensive data management plan for IMM. The IMM Database s structure and architecture has proven to support additional usages. As seen by the resources utilization across medical conditions analysis. In addition, the IMM Database s web-based interface provides a user-friendly format for customers to browse and download the clinical information for medical conditions. It is this type of functionality that will provide Exploratory Medicine Capabilities the evidence base for their medical condition list. CONCLUSION: The IMM Database in junction with the IMM is helping NASA aerospace program improve the health care and reduce risk for the astronauts crew. Both the database and model will continue to expand to meet customer needs through its multi-disciplinary evidence based approach to managing data. Future expansion could serve as a platform for a Space Medicine Wiki of medical conditions.
Saile, Lyn↗
Optimizing energy yield of monolithic perovskite/silicon tandem solar cells in real-world Conditions: The impact of luminescent coupling
Efficient light management is key to maximizing power conversion efficiency (PCE) in monolithic perovskite/silicon tandem solar cells. Achieving peak efficiency requires closely matched current generation in all junctions, especially in integrated configurations. However, real-world conditions vary significantly due to factors such as sunlight spectrum, diffuse-to-direct sunlight ratio, angular distribution of light, subcell temperature coefficients, and ground reflection. This study introduces a comprehensive optical and device simulation to optimize perovskite/silicon tandem cells, considering experimental luminescent coupling (LC) efficiency and its dependence on working conditions, alongside variations in radiative recombination, effect of temperature on absorptivity spectra, and cloud cover. Our results show potential energy yield improvements of up to 1.4 % with LC, based on current perovskite radiative recombination records, and up to 4 % with direct bandgap materials. Although radiative recombination's dependence on excitation intensity reduces output power and requires thicker absorbers, LC compensates for these losses. LC also lowers the optimized bandgap for the perovskite top cell from 1.72 eV to 1.64–1.68 eV, or even lower in regions with redshifted irradiance. Additionally, optimization revealed that thinner silicon bottom cells require a higher perovskite top cell bandgap, impacting the balance between fabrication cost and cell stability.
14 SOLAR ENERGY↗
By-Pass Diode Temperature Tests of a Solar Array Coupon under Space Thermal Environment Conditions
By-Pass diodes are a key design feature of solar arrays and system design must be robust against local heating, especially with implementation of larger solar cells. By-Pass diode testing was performed to aid thermal model development for use in future array designs that utilize larger cell sizes that result in higher string currents. Testing was performed on a 56-cell Advanced Triple Junction solar array coupon provided by SSL. Test conditions were vacuum with cold array backside using discrete by-pass diode current steps of 0.25 A ranging from 0 A to 2.0 A.
Wright, Kenneth H.↗
Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications
Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.
Woodyard, James R.↗
On the computational solution of vector-density based continuum dislocation dynamics models: A comparison of two plastic distortion and stress update algorithms
Continuum dislocation dynamics models of mesoscale plasticity consist of dislocation transport-reaction equations coupled with crystal mechanics equations. The coupling between these two sets of equations is such that dislocation transport gives rise to the evolution of plastic distortion (strain), while the evolution of the latter fixes the stress from which the dislocation velocity field is found via a mobility law. Earlier solutions of these equations employed a staggered solution scheme for the two sets of equations in which the plastic distortion was updated via time integration of its rate, as found from Orowan's law. In this work, we show that such a direct time integration scheme can suffer from accumulation of numerical errors. We introduce an alternative scheme based on field dislocation mechanics that ensures consistency between the plastic distortion and the dislocation content in the crystal. The new scheme is based on calculating the compatible and incompatible parts of the plastic distortion separately, and the incompatible part is calculated from the current dislocation density field. Stress field and dislocation transport calculations were implemented within a finite element based discretization of the governing equations, with the crystal mechanics part solved by a conventional Galerkin method and the dislocation transport equations by the least squares method. A simple test was first performed to show the accuracy of the two schemes for updating the plastic distortion, which shows that the solution method based on field dislocation mechanics is more accurate. This method then was used to simulate an austenitic steel crystal under uniaxial loading and multiple slip conditions. By considering dislocation interactions caused by junctions, a hardening rate similar to discrete dislocation dynamics simulation results was obtained. Finally, the simulations show that dislocations exhibit some self-organized structures as the strain is increased.
36 MATERIALS SCIENCE↗
Flux-Closure Domain Structures in Ferroelectric K 0.5 Na 0.5 NbO 3 Thin Films
Topological domain structures in ferroelectric materials have garnered increasing attention due to their intriguing physical properties and promising applications. While most existing topological structures in ferroelectric perovskite oxides originate from tetragonal or rhombohedral bulk phases, much less is understood about their counterparts in orthorhombic ferroelectrics. Here, in this work, we employ ferroelectric K 0.5 Na 0.5 NbO 3 (KNN) thin films as a model system and leverage phase-field simulations to theoretically predict the static structures and dynamic behaviors of three types of flux-closure domain configurations: in-plane (Type-I), out-of-plane (Type-II), and superdomain (Type-III) flux-closure structures. We systematically investigate the effects of finite size, misfit strains, and electrical boundary conditions on the formation and switching of these topological structures. For the Type-I structure, size reduction or small misfit strain facilitates a transition of the flux-closure pattern to polar vortices. Type-II structures emerge under open-circuit electrical boundary conditions of the film, forming at the junctions of specific domain walls with the film surface or the film–substrate interface. The formation mechanisms of these two flux-closure structures are rationalized from an energy perspective. We demonstrated switching capabilities of Type-II and Type-III structures by obtaining polarization–electric field hysteresis loops. Our simulations also reveal a reversible electric-field-induced transition between the orthorhombic and rhombohedral ferroelectric phases with a checkerboard domain pattern, during which the integrity of the flux-closure structure is preserved. These findings provide theoretical insights and practical guidance for identifying and manipulating topological structures in low-symmetry ferroelectrics, paving the way for developing energy-efficient microelectronic devices based on topological structures.
P-E loop↗