Search NASA⌕ Search

SEARCH · Search NASA

Results for “laser annealing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Laser Techniques in Photovoltaic Research

High-power laser pulses were used to replace the conventional high temperature furnace processing for the p-n junction formation step in high speed, low cost solar cell fabrication. Three different approaches to junction formation were tested: (1) laser annealing of ion-implanted Si in which laser radiation is used to remove the radiation damage and to recover the electrical activity in the implanted layer; (2) a process in which a thin film of dopant is first deposited on the substrate and then incorporated into the near-surface region by laser-induced diffusion; and (3) a process in which a heavily doped amorphous silicon layer is deposited on the Si substrate and epitaxially regrown from the melted substrate layer by laser radiation. All three methods were found to provide suitable candidates for high efficiency Si solar cells.

Young, R. T.↗
NASA NTRS1981

Ohmic contacts to GaAs for high-temperature device applications

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

Anderson, W. T., Jr.↗
DOE OSTI2022

The electronic Raman scattering spectrum of PuO 2

Here the Raman spectrum of PuO 2 was measured up to 13,000 cm –1 with three different laser excitation wavelengths spanning the resonance (405 nm), near-resonance (457 nm), and preresonance (514 nm) energy range. Approximately 26 never-before-seen bands were observed between 3500 and 13,000 cm –1 . Given the very high energy of the Raman shifts of these bands and the relative insensitivity of their spectral position to the interrogating laser wavelength, they are believed to arise from an electronic origin. These bands are present in both freshly calcined and radiolytically aged PuO 2 , although a broad luminescence is observed in the aged material, which obscures many of the high frequency features. In situ laser annealing of the material attenuated this luminescence and allowed for clear observation of these never-before-seen spectral features. Discovery of these high-energy bands presents a new way of identifying PuO 2 for nuclear nonproliferation and forensics purposes.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
NASA NTRS1985

Pulsed excimer laser processing

The status of pulsed excimer laser processing of PV cells is presented. The cost effective feasibility of fabricating high efficiency solar cells on Czochralski wafers using a pulsed excimer laser for junction formation, surface passivation, and front metallization. Laser annealing results were promising with the best AR coated cell having an efficiency of 16.1%. Better results would be expected with larger laser spot size because there was some degradation in open circuit voltage caused by laser spot overlap and edge effects. Surface heating and photolytic decomposition by the laser was used to deposit tungsten from the reaction of tungsten hexafluoride and hydrogen. The line widths were 5 to 10 mils, and the depositions passed the tape adhesion test. Thinner lines are practical using an optimized optical system.

Wong, D.↗
NASA NTRS1992

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

Thin film ferroelectric capacitors comprising a ferroelectric film sandwiched between electrodes for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode. The anneal is done so as to form the interface between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550 to 600 C for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the nonswitching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the nonswitching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

Thakoor, Sarita↗
NASA NTRS1994

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

Thin film ferroelectric capacitors (10) comprising a ferroelectric film (18) sandwiched between electrodes (16 and 20) for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode (20). The anneal is done so as to form the interface (22) between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550.degree. to 600.degree. C. for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the non-switching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the non-switching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

Thakoor, Sarita↗
NASA NTRS1986

Quenched-in defects in flashlamp-annealed silicon

Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep-level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev + 0.32 eV and at Ev + 0.45 eV, are observed. These results are compared to those obtained by furnace-quenching and laser-annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev + 0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized.

Borenstein, J. T.↗
DOE OSTI2025

Laser-induced selective local patterning of vanadium oxide phases

The same elements can form different compounds with widely different physical properties. Synthesis of a single-phase material is commonly achieved by controlling experimental conditions. Synthesizing materials that incorporate multiple specific spatially distributed chemical phases is often challenging, especially if different phases must be organized into well-defined spatial patterns. Here, we present an efficient solid reaction laser annealing (SRLA) approach to directly write regions of different local chemical compositions. We demonstrate the practical utility of our approach by locally writing microscale patterns of distinct chemical phases in vanadium oxide thin films. Specifically, we achieved the controlled local recrystallization of a uniform V 2 O 3 matrix into VO 2 , V 3 O 5 , and V 4 O 7 regions exhibiting sharp 1st- and 2nd-order metal–insulator phase transitions over a wide range of critical temperatures, i.e., a characteristic feature of select vanadium oxides that is extremely sensitive to even minute structural or compositional imperfections. We utilized the local chemical phase writing to pattern spiking oscillators with distinct electrical behavior directly in the thin film sample without employing elaborate lithography fabrication. Our laser tuning local chemical composition opens a pathway to synthesize a wide range of artificially micropatterned composite materials, with precision and control unattainable in conventional material synthesis methods.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

One–Step Fabrication of Nanocrystalline Nanonetwork SnO 2 Gas Sensors by Integrated Multilaser Processing

An integrated multilaser process is developed to fabricate nanocrystalline nanonetwork SnO 2 gas sensors in one integrated procedure, which combines electrodes fabrication, nanomaterials deposition, and postannealing. Interdigit electrodes are fabricated on an Au-coated fused silica substrate using a picosecond (ps) laser, which ablates the Au coating from the back of the substrate to pattern the electrodes. A novel transmitted Ps laser deposition (TPLD) process is designed to deposit SnO 2 nanonetwork on the interdigit electrodes with precise deposition area control under a close target-to-substrate distance. The obtained SnO 2 nanonetwork is in situ postannealed by a CO 2 laser to improve the crystallinity, while the nano morphology and grain size keep intact. To investigate the morphology and formation process of the nanonetwork, the microstructure of the laser-deposited SnO 2 layer is characterized. As a result, the crystallization control of CO 2 laser annealing is investigated through analyzing the Raman spectrum, X-ray diffraction (XRD) patterns, and lattice structures of the samples. By exposed to H 2 atmosphere, the fabricated gas sensor is demonstrated for H 2 monitoring.

08 HYDROGEN↗
DOE OSTI2021

Raman signatures from age-dating PuO 2 since last calcination

The self-irradiation of PuO 2 has been shown to affect the attributes of fifteen vibrational bands in the Raman spectrum. The vibrational bands correspond to the Raman allowed vibrational mode T 2g , overtones, defects, and bands from electronic origin. Defects in the crystal lattice from low-calcination temperature and alpha decay origins are responsible for the changes in the band attributes (band position, full-width half maximum (FWHM), intensity). Crystal lattice defects are also responsible for the growth of the defect bands. The temporal behavior of the vibrational bands can be used to estimate the age of the material since last calcination. Laser annealing was used to reset the material to full crystallinity prior to the aging study. 240 PuO 2 , with an alpha decay rate of 3.67 greater than the decay rate of 239 PuO 2 , was primarily used to assess the alpha decay-induced damage within 3 years. The aging study focused on the time-dependent properties of the T 2g band and the growth of defect bands. The FWHM of the T 2g band and the ratio of the areas of the defect bands/T 2g band were measured through a time period in excess of 3 years. The data from this study were found very close to the data describing the temporal evolution of the lattice constant measured with the X-ray diffraction (XRD) technique. The local physical properties of the material measured with Raman spectroscopy and the lattice parameter constant measured with XRD indicates a strong correlation between the two techniques. Although both techniques provide similar age-dating information, in contrast to the few milligram quantities required for XRD, Raman spectroscopy requires a 10 µm diameter PuO 2 particle to provide an estimate of the material age since last calcination.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Investigating rapid alpha-decay induced aging of 238 PuO 2 by Raman Spectroscopy

Investigating alpha-decay induced aging in PuO 2 is useful in nuclear forensics; helping to determine the time since last calcination. This was previously investigate by monitoring the damage to 240 PuO 2 over the course of a few years. The rate of alpha-decay induced aging has long been assumed to scale only with the decay rate of other isotopes without direct verification. This article reports the first alpha-decay aging study of 238 PuO 2 by Raman spectroscopy. Contrary to the expected 10 days for 238 PuO 2 to reach steady state based on 240 PuO 2 studies, the alpha aging curve reached an approximate steady state ∼24–30 h after laser annealing. While the cause of the order of magnitude decrease is unknown, it is speculated that dynamic annealing could contribute to the differences in rate of induced aging. The Raman spectra of annealed and aged 238 PuO 2 matched the expected features in 239 PuO 2 and 240 PuO 2 spectra; showing no formation of new stable chemical species in the material such as secondary Pu oxide phases (e.g., Pu 4 O 9 ). In conclusion, results indicate that 238 Pu could be leveraged for rapid alpha-decay aging studies to characterize alpha-decay induced features and better understand matrix temperatures and the annealing of Frankel pair defects.

Actinide↗
DOE OSTI2020

Synthesis, Elasticity, and Spin State of an Intermediate MgSiO 3 -FeAlO 3 Bridgmanite: Implications for Iron in Earth's Lower Mantle

Fe-Al-bearing bridgmanite may be the dominant host for ferric iron in Earth's lower mantle. Here we report the synthesis of (Mg 0.5 Fe 3+ 0.5 )(Al 0.5 Si 0.5 )O 3 bridgmanite (FA50) with the highest Fe 3+ -Al 3+ coupled substitution known to date. X-ray diffraction measurements showed that at ambient conditions, the FA50 adopted the LiNbO 3 structure. Upon compression at room temperature to 18 GPa, it transformed back into the bridgmanite structure, which remained stable up to 102 GPa and 2,600 K. Fitting Birch-Murnaghan equation of state of FA50 bridgmanite yields V 0 = 172.1(4) Å 3 , K 0 = 229(4) GPa with K 0 ' = 4(fixed). Furthermore, the calculated bulk sound velocity of the FA50 bridgmanite is ~7.7% lower than MgSiO 3 bridgmanite, mainly because the presence of ferric iron increases the unit-cell mass by 15.5%. This difference likely represents the upper limit of sound velocity anomaly introduced by Fe 3+ -Al 3+ substitution. X-ray emission and synchrotron Mössbauer spectroscopy measurements showed that after laser annealing, ~6% of Fe 3+ cations exchanged with Al 3+ and underwent the high- to low-spin transition at 59 GPa. The low-spin proportion of Fe 3+ increased gradually with pressure and reached 17–31% at 80 GPa. Since the cation exchange and spin transition in this Fe 3+ -Al 3+ -enriched bridgmanite do not cause resolvable unit-cell volume reduction, and the increase of low-spin Fe 3+ fraction with pressure occurs gradually, the spin transition would not produce a distinct seismic signature in the lower mantle. However, it may influence iron partitioning and isotopic fractionation, thus introducing chemical heterogeneity in the lower mantle.

58 GEOSCIENCES↗
DOE OSTI2025

Laser activation of single group-IV colour centres in diamond

Abstract Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realising precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV − ) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV − centres. Our in-situ spectral monitoring opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV − centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.

Science & Technology - Other Topics↗
DOE OSTI2022

Pressure-induced metallization and 3d-like behavior in TcS 2

TcS 2 undergoes a charge transfer insulator to metal transition above 28 GPa. Here, laser annealing reveals a kinetically hindered high pressure arsenopyrite phase that is recoverable to ambient. The new phase is similar to the Mn-dichalcogenides rather than the expected Redichalcogenides and involves the formation of S–S and Tc–Tc bonds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Novel Q-Carbon Anodes for Sodium-Ion Batteries

The lack of a standard anode for sodium-ion batteries (SIBs) has greatly hindered their applications. Herein, we show that a novel phase of carbon, namely Q-carbon, is an effective anode material for sodium-ion batteries. The Q-carbon, which is a metastable phase of carbon consisting of about 80% sp 3 - and 20% sp 2 -bonded carbon, is synthesized by nonequilibrium pulsed laser annealing and arc-discharge methods. Two types of Q-carbons, Q1 and Q2, were evaluated as anode material for SIBs. Q1 had a slow quench and was used as the control, whereas Q2 was Q-carbon with a rapid quenching. Q1 exhibits a high initial columbic efficiency of 81% and a low-capacity retention of less than 60%, whereas Q2 has a low initial columbic efficiency of 58% and a high-capacity retention of 81%. Q2 exhibits a stable capacity of 168 mAh·g −1 at a cycling rate of C/3 (124 mA·g −1 ), which is comparable to other hard carbon anodes reported in the literature. This unique synthesis method opens a pathway for the further tuning of Q-carbon with higher trapping/charging of Na + ions in improved SIBs.

25 ENERGY STORAGE↗
NASA NTRS1978

Automated Array Assembly, Phase 2. Low-cost Solar Array Project, Task 4

Work was done to verify the technological readiness of a select process sequence with respect to satisfying the Low Cost Solar Array Project objectives of meeting the designated goals of $.50 per peak watt in 1986 (1975 dollars). The sequence examined consisted of: (1) 3 inches diameter as-sawn Czochralski grown 1:0:0 silicon, (2) texture etching, (3) ion implanting, (4) laser annealing, (5) screen printing of ohmic contacts and (6) sprayed anti-reflective coatings. High volume production projections were made on the selected process sequence. Automated processing and movement of hardware at high rates were conceptualized to satisfy the PROJECT's 500 MW/yr capability. A production plan was formulated with flow diagrams integrating the various processes in the cell fabrication sequence.

Lopez, M.↗
NASA NTRS1978

Solar power satellite system definition study

A synopsis of the study plan for the solar power satellite system is presented. Descriptions of early task progress is reported for the following areas: (1) laser annealing, (2) solid state power amplifiers, (3) rectenna option, (4) construction of an independent electric orbit transfer vehicle, and (5) construction of a 2.5 GW solar power satellite.

Source record↗
NASA NTRS1979

Solar power satellite system definition study. Volume 1: Executive summary

Configuration concepts, option sizes, and systems definitions study design evolutions are reviewed. The main features of the present reference design silicon solar cell solar power satellite are described, as well as the provisions for space construction and support systems. The principal study accomplishments and conclusions are summarized according to the following tasks: (1) baseline critique; (2) construction and maintenance; (3) industrial complex needs, cost estimates, and production capacity; (4) launch complex requirements at KSC or at an offshore facility; (5) integration of the SPS/ground power network; (6) technology advancement and development; (7) costs and schedules; and (8) exploratory technology: laser annealing of solar cells degraded by proton irradiation, and a fiber-optic phase distribution link at 980 MHz.

Source record↗