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At least 55 records · Page 3

Local oscillator chain for 1.55 to 1.75 THz with 100-(mu)W peak power

We report on the design and performance of a fix-tuned x2x 3x 3 frequency multiplier chain that covers 1.55-1.75 THz. The chain is nominally pumped with 100 mW at W-band. At 120 K the measured output power is larger than 4 (mu)W across the band with a peak power of 100 (mu) W at 1.665 THz. A similar chain operated at room temperature produced a peak power of 21 (mu)W. These power levels now make it possible to deploy multipixel heterodyne imaging arrays in this frequency range.

frequency multiplier↗

Tunable All-Solid-State Local Oscillators to 1900 GHz

We present a status report of an ongoing effort to develop robust tunable all-solid-state sources up to 1900 GHz for the Heterodyne Instrument for the Far Infrared (HIFI) on the Herschel Space Observatory. GaAs based multi-chip power amplifier modules at W-band are used to drive cascaded chains of multipliers. We have demonstrated performance from chains comprised of four doublers up to 1600 GHz as well as from a x2x3x3 chain to 1900 GHz. Measured peak output power of 23 (micro)W at 1782 GHz and 2.6 (micro)W at 1900 GHz has been achieved when the multipliers are cooled to 120K. The 1900 GHz tripler was pumped with a four anode tripler that produces a peak of 4 mW at 630 GHz when cooled to 120 K. We believe that these sources can now be used to pump hot electron bolometer (HEB) heterodyne mixers.ter (HEB) heterodyne mixers.

local oscillator↗

Status of local oscillators for operating ultra-high resolution frequency discriminators as frequency standards

The operation of new improved frequency standards based on new ultra-high-resolution frequency discriminators requires high stability local, or 'flywheel' oscillators. We review the spectral density of phase fluctuations of existing flywheel oscillators and the related time domain frequency stability of new and proposed cryogenically cooled oscillators suitable for this application. Presently used devices include the quartz crystal oscillator, the room-temperature actively oscillating atomic hydrogen (H) maser, and the superconducting maser oscillator. Future devices include the cryogenic H-maser and other cryogenic devices using resonators of superconducting metal or solid crystalline sapphire. The relation of the phase spectral density of these devices to the characteristics of present and proposed frequency discriminators based on trapped cooled ions and cold atoms is discussed in terms of their operation as frequency standards.

Vessot, R. F. C.↗

Heterodyne spectroscopy of astronomical and laboratory sources at 8.5 microns using diode laser local oscillators

The first 8.5 microns infrared heterodyne spectrometer has been constructed using tuneable semiconductor (PbSe) diode lasers and was used to measure absorption line profiles of N2O in the laboratory, as well as black-body emission from the moon and from Mars. Spectral information was recorded over a 200 MHz bandwidth using an 8-channel filter bank. The resolution was 25 MHz (6 millionths of a micron), and the minimum detectable (black-body) power was approximately 1 times 10 to the minus 16th power W for 8 min of integration. The results demonstrate the usefulness of heterodyne spectroscopy for the study of remote and local sources in the infrared.

Mumma, M.↗

Digital phase shifter synchronizes local oscillators

Digital phase-shifting network is used as synchronous frequency multiplier for applications such as phase-locking two signals that may differ in frequency. Circuit has various phase-shift capability. Possible applications include data-communication systems and hybrid digital/analog phase-locked loops.

Ali, S. M.↗

Diagnostics and control of wavenumber stability and purity of tunable diode lasers relevant to their use as local oscillators in heterodyne systems

Initial operation of the tunable diode lasers (TDL) showed that it was not possible to adjust the wavenumber to one selected a priori in the TDL tuning range. During operation, the operating point would change by 0.1/cm over the longer term with even larger changes occurring during some thermal cycles. Most changes during thermal cycling required using lower temperatures and higher currents to reach the former wavenumber (when it could be reached). In many cases, an operating point could be selected by changing TDL current and temperature to give both the desired wavenumber and most of the power in a single mode. The selection procedure had to be used after each thermal cycling. Wavenumber nonlinearities of about 10% over a 0.5 cm tuning range were observed. Diagnostics of the single mode selected by a grating monochromator showed wavenumber fine structure under certain operating conditions. The characteristics due to the TDL environment included short term wavenumber stability, the instrument lineshape function, and intermediate term wavenumber stability.

Poultney, S.↗

Fine wavelength id for tunable laser local oscillators

A wavelength ID device which consists of an electronic show that the etalon has a finesse F 30 which is maintainable for several days. These tests also demonstrate that the etalon system is capable of resonance frequency stability during similar time periods. With currently available coatings, this level of performance is achievable over an optical bandwidth delta lambda = 3 micrometers centered at lambda = 10 micrometers.

Savage, M. G.↗

A stable submillimeter laser local oscillator for heterodyne radiometry and spectroscopy

A submillimeter laser with off-axis pump beam injection is described. This design concept achieves complete isolation of the pump laser with respect to the pump radiation reflected from the submillimeter resonator. Active line independent stabilization of the pump laser is obtained by the use of an external tunable etalon as a frequency reference. The submillimeter output power is constant to within 4% over periods of hours. Mean frequency drifts of less than 2 parts in 100 million per minute were measured by mixing with very high harmonics of an X-band synthesizer in a planar Schottky diode.

Koepf, G. A.↗

Central Control of Local Oscillator Frequencies

Central unit automatically controls frequencies of group of independent crystal-controlled low-power oscillators. Unit checks its own frequency against accurate frequency reference, such as station WWV and corrects its own timing circuit as necessary.

Smith, S. F.↗

Collaborative research in tunneling and field emission pumped surface wave local oscillators and amplifiers for infrared and submillimeter wavelengths under director's discretionary fund

Progress is reported in work towards the development of surface wave sources for the infrared and sub-millimeter portion of the spectrum to be based upon electron pumping by tunneling electrons in metal-barrier-metal or metal-barrier-semiconductor devices. Tunneling phenomena and the coupling of radiation to tunnel junctions were studied. The propagation characteristics of surface electro-magnetic modes in metal-insulator-p(++) semiconductor structures as a function of frequency were calculated. A model for the gain process based upon Tucker's formalism was developed and used to estimate what low frequency gain might be expected from such structures. The question of gain was addressed from a more fundamental viewpoint using the method of Lasher and Stern.

Gustafson, T. K.↗

A theoretical and experimental study of the noise behavior of subharmonically injection locked local oscillators

A method for the noise characterization of optically controlled subharmonically injection-locked oscillators is presented. Based on a nonlinear model of synchronized oscillators, this method is used to formulate a general expression for phase noise calculation, so that FM noise degradation of a subharmonically synchronized LO at large-signal levels can be predicted easily and accurately. Experimental results of FM noise measurement of an oscillator confirmed the accuracy of the analysis.

Zhang, Xiangdong↗

Parallel arrays of Josephson junctions for submillimeter local oscillators

In this paper we discuss the influence of the DC biasing circuit on operation of parallel biased quasioptical Josephson junction oscillator arrays. Because of nonuniform distribution of the DC biasing current along the length of the bias lines, there is a nonuniform distribution of magnetic flux in superconducting loops connecting every two junctions of the array. These DC self-field effects determine the state of the array. We present analysis and time-domain numerical simulations of these states for four biasing configurations. We find conditions for the in-phase states with maximum power output. We compare arrays with small and large inductances and determine the low inductance limit for nearly-in-phase array operation. We show how arrays can be steered in H-plane using the externally applied DC magnetic field.

Pance, Aleksandar↗

Experimental Investigation of Local Oscillator Chains with GaAs Planar Diodes at Cryogenic Temperatures

This paper will describe a robust test-bed that has been built to measure multiplier performance over a wide range of temperatures and frequencies. In a 182-212 GRz designed balanced doubler the peak efficiency at 201 GHz improves from 22% to 28% upon cooling from 300 K to 120 K. This stage is then used to pump a 362-424 GRz balanced planar doubler. The peak chain efficiency increases from 3.4% to 6% when the two cascaded doublers are cooled from 300 K to 120 K. This enables the production of 10 mW of peak output power at 377 GHz, which ought to be sufficient for driving the next stage multiplier.

Maestrini, A.↗

Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

Kolokolov, K.↗