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Results for “neuromorphic behavior”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Synthetic antiferromagnet-based spin Josephson oscillator

Two easy-plane ferromagnetic layers, antiferromagnetically coupled through a thin nonmagnetic metal layer, form the magnetic analog of a Josephson junction. Additionally, a current driven spin chemical potential drives a 2π precession of the in-plane magnetization of each ferromagnet. The participation of the full magnetic moment in the 2π precession maximizes the giant magnetoresistance and the ac output power. The frequency can be continuously tuned by a dc bias. An applied ac bias results in a time-averaged magnetoresistance with Shapiro-like steps. The multistate mode-locking behavior exhibited by the Shapiro steps may be exploited for applications such as microwave detectors and neuromorphic computing. They may also serve as an experimental signature of spin superfluidity.

42 ENGINEERING↗
DOE OSTI2021

Surface-sensitive photon avalanche behavior revealed by single-avalanching-nanoparticle imaging

Avalanching nanoparticles (ANPs) are a new class of lanthanide-based upconverting material demonstrating steep optical nonlinearities with the potential to advance applications ranging from subwavelength bioimaging to neuromorphic computing, nanothermometry, and pressure transduction. Here, we use single-nanocrystal imaging to uncover design-dependent heterogeneity in ANP threshold intensity (I th ). Quantitative comparisons between distributions of I th and ANP shell properties reveal correlations between mean I th values, histogram widths, and nanocrystal shell thickness. Evaluating avalanching behaviors using an established model of shell-dependent surface energy transfer shows that variations in shell thickness-and the resultant energy transfer through the shell to the surface and environment-are likely the primary contributor to ANP-to-ANP I th heterogeneity. Further, nanocrystals with an ~6 nm average shell thickness show I th heterogeneity beyond the extent expected from statistical measurements of shell size and variability using transmission electron microscopy (TEM). Here these results provide a principal guide for the design and application of ANPs to environmental sensing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Imaging Domain Walls in van der Waals Ferroelectrics Using Tip-Enhanced Second Harmonic Generation

van der Waals ferroelectrics have captured significant interest for applications in novel memory and neuromorphic computing devices. Within these materials, interfaces between regions of different ferroelectric polarizations (i.e., domain walls) exhibit distinctive behaviors. Characterization of these behaviors remains a challenge, as domain wall thickness resides at the nanoscale. Using tip-enhanced second harmonic generation (TESHG), we demonstrate nanoscale imaging of domain walls in 2D ferroelectric α-In 2 Se 3 . With a narrow-band near-IR laser, we take advantage of high-wavelength, off-resonant signal enhancement to generate robust and reproducible TESHG. In conclusion, a 16 nm spatial resolution is achieved, and we identify spectral features suggesting that nonlocal effects from domain walls persist nanometers into adjacent domains.

Mantilla, Alexander B. C. [Washington State Univ.,↗
DOE OSTI2022

Demonstration of Decentralized Physics-Driven Learning

In typical artificial neural networks, neurons adjust according to global calculations of a central processor, but in the brain, neurons and synapses self-adjust based on local information. Contrastive learning algorithms have recently been proposed to train physical systems, such as fluidic, mechanical, or electrical networks, to perform machine-learning tasks from local evolution rules. However, to date, such systems have only been implemented in silico due to the engineering challenge of creating elements that autonomously evolve based on their own response to two sets of global boundary conditions. Here, we introduce and implement a physics-driven contrastive learning scheme for a network of variable resistors, using circuitry to locally compare the response of two identical networks subjected to the two different sets of boundary conditions. Using this method, our system effectively trains itself, optimizing its resistance values without the use of a central processor or external information storage. Once the system is trained for a specified allostery, regression, or classification task, the task is subsequently performed rapidly and automatically by the physical imperative to minimize power dissipation in response to the given voltage inputs. Here, we demonstrate that, unlike typical computers, such learning systems are robust to extreme damage (and thus manufacturing defects) due to their decentralized learning. Our twin-network approach is therefore readily scalable to extremely large or nonlinear networks, where its distributed nature will be an enormous advantage; a laboratory network of only 500 edges will already outpace its in silico counterpart.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Synthesis and electrical behavior of VO 2 thin films grown on SrRuO 3 electrode layers

VO 2 thin films were grown on conducting oxide underlayer SrRuO 3 buffered SrTiO 3 (111) and Si/SiO 2 substrates, respectively, using sputtering. X-ray diffraction phi-scans revealed the epitaxial nature of the VO 2 films grown on SrRuO 3 buffered SrTiO 3 and polycrystalline structure for films grown on SrRuO 3 buffered Si/SiO 2 . X-ray photoelectron spectroscopy confirms a dominant presence of V 4+ in both films and establishes a high-quality growth of single-phase VO 2 films. Temperature and electric-field driven metal-insulator-transition in both the in-plane and out-of-plane configurations were investigated. Depending on the configuration, the resistance change across the metal-insulator-transition varies from a factor of 1.57–3. The measured resistance in each state as well as the magnitude of resistance change were similar during temperature and electric-field driven metal-insulator-transition. To shed light on the suppressed metal-insulator-transition characteristics due to the current shunting effect from conducting SrRuO 3 bottom electrode, a distributed resistance network model is proposed and benchmarked against reports from the literature. Here, the results demonstrate the growth of high-quality VO 2 on conducting SrRuO 3 layers and their electrical behavior, which is of particular interest for all-oxide electronic devices utilizing phase transitions such as resistive memory and neuromorphic oscillators.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Three Artificial Spintronic Leaky Integrate-and-Fire Neurons

We report that due to their non-volatility and intrinsic current integration capabilities, spintronic devices that rely on domain wall (DW) motion through a free ferromagnetic track have garnered significant interest in the field of neuromorphic computing. Although a number of such devices have already been proposed, they require the use of external circuitry to implement several important neuronal behaviors. As such, they are likely to result in either a decrease in energy efficiency, an increase in fabrication complexity, or even both. To resolve this issue, we have proposed three individual neurons that are capable of performing these functionalities without the use of an external circuitry. To implement leaking, the first neuron uses a dipolar coupling field, the second uses an anisotropy gradient, and the third uses shape variations of the DW track.

neural network crossbar↗
DOE OSTI2024

Collective dynamics and long-range order in thermal neuristor networks

Abstract In the pursuit of scalable and energy-efficient neuromorphic devices, recent research has unveiled a novel category of spiking oscillators, termed “thermal neuristors.” These devices function via thermal interactions among neighboring vanadium dioxide resistive memories, emulating biological neuronal behavior. Here, we show that the collective dynamical behavior of networks of these neurons showcases a rich phase structure, tunable by adjusting the thermal coupling and input voltage. Notably, we identify phases exhibiting long-range order that, however, does not arise from criticality, but rather from the time non-local response of the system. In addition, we show that these thermal neuristor arrays achieve high accuracy in image recognition and time series prediction through reservoir computing, without leveraging long-range order. Our findings highlight a crucial aspect of neuromorphic computing with possible implications on the functioning of the brain: criticality may not be necessary for the efficient performance of neuromorphic systems in certain computational tasks.

Science & Technology - Other Topics↗
DOE OSTI2022

Shape‐Dependent Multi‐Weight Magnetic Artificial Synapses for Neuromorphic Computing

Abstract In neuromorphic computing, artificial synapses provide a multi‐weight (MW) conductance state that is set based on inputs from neurons, analogous to the brain. Herein, artificial synapses based on magnetic materials that use a magnetic tunnel junction (MTJ) and a magnetic domain wall (DW) are explored. By fabricating lithographic notches in a DW track underneath a single MTJ, 3–5 stable resistance states that can be repeatably controlled electrically using spin‐orbit torque are achieved. The effect of geometry on the synapse behavior is explored, showing that a trapezoidal device has asymmetric weight updates with high controllability, while a rectangular device has higher stochasticity, but with stable resistance levels. The device data is input into neuromorphic computing simulators to show the usefulness of application‐specific synaptic functions. Implementing an artificial neural network (NN) applied to streamed Fashion‐MNIST data, the trapezoidal magnetic synapse can be used as a metaplastic function for efficient online learning. Implementing a convolutional NN for CIFAR‐100 image recognition, the rectangular magnetic synapse achieves near‐ideal inference accuracy, due to the stability of its resistance levels. This work shows MW magnetic synapses are a feasible technology for neuromorphic computing and provides design guidelines for emerging artificial synapse technologies.

Leonard, Thomas↗
DOE OSTI2022

Heterosynaptic plasticity in biomembrane memristors controlled by pH

Abstract In biology, heterosynaptic plasticity maintains homeostasis in synaptic inputs during associative learning and memory, and initiates long-term changes in synaptic strengths that nonspecifically modulate different synapse types. In bioinspired neuromorphic circuits, heterosynaptic plasticity may be used to extend the functionality of two-terminal, biomimetic memristors. In this article, we explore how changes in the pH of droplet interface bilayer aqueous solutions modulate the memristive responses of a lipid bilayer membrane in the pH range 4.97–7.40. Surprisingly, we did not find conclusive evidence for pH-dependent shifts in the voltage thresholds ( V* ) needed for alamethicin ion channel formation in the membrane. However, we did observe a clear modulation in the dynamics of pore formation with pH in time-dependent, pulsed voltage experiments. Moreover, at the same voltage, lowering the pH resulted in higher steady-state currents because of increased numbers of conductive peptide ion channels in the membrane. This was due to increased partitioning of alamethicin monomers into the membrane at pH 4.97, which is below the pKa (~5.3–5.7) of carboxylate groups on the glutamate residues of the peptide, making the monomers more hydrophobic. Neutralization of the negative charges on these residues, under acidic conditions, increased the concentration of peptide monomers in the membrane, shifting the equilibrium concentrations of peptide aggregate assemblies in the membrane to favor greater numbers of larger, increasingly more conductive pores. It also increased the relaxation time constants for pore formation and decay, and enhanced short-term facilitation and depression of the switching characteristics of the device. Modulating these thresholds globally and independently of alamethicin concentration and applied voltage will enable the assembly of neuromorphic computational circuitry with enhanced functionality. Impact statement We describe how to use pH as a modulatory “interneuron” that changes the voltage-dependent memristance of alamethicin ion channels in lipid bilayers by changing the structure and dynamical properties of the bilayer. Having the ability to independently control the threshold levels for pore conduction from voltage or ion channel concentration enables additional levels of programmability in a neuromorphic system. In this article, we note that barriers to conduction from membrane-bound ion channels can be lowered by reducing solution pH, resulting in higher currents, and enhanced short-term learning behavior in the form of paired-pulse facilitation. Tuning threshold values with environmental variables, such as pH, provide additional training and learning algorithms that can be used to elicit complex functionality within spiking neural networks. Graphical abstract

36 MATERIALS SCIENCE↗
DOE OSTI2025

Probing the Effects of the First Atomic Layer on the Dynamic Behavior of Sub-2 nm MgO/Al 2 O 3 Memristors

As electronic devices continue to scale down from the current sub-5 nm range, atomic-scale control of defects becomes increasingly crucial to suppressing their impact on the physical properties of the devices. Memristors present an excellent example as a nonlinear and dynamic device with high speed and endurance required for electronic applications ranging from neuromorphic computing to nonvolatile memories. Herein we investigate the impact of atomic defects in sub-2 nm thick MgO/Al 2 O 3 atomic layer stack (ALS) memristors that use an M1 (switching layer)/M2 (oxygen vacancy reservoir layer) bilayer structure grown using in vacuo atomic layer deposition (iALD). Intriguingly, we revealed a direct correlation of the atomic defects in the M2 layer with the memristor dynamic behavior using a combined analysis of in situ scanning tunneling spectroscopy (iSTS) on the M2 layer and ex situ characterization on the memristors. Specifically, incomplete coverage of the 1st ALD atomic layer of M2 on the electrode yields defects at the M2/electrode interface. Despite the monotonic increase of ALD coverage, by almost three-fold from ~30% to >90%, at completion of the M2 layer of ~ 0.7 nm in thickness, the impact of the defects on the M2/electrode interface has been found detrimental to both memristor switching speed and endurance. Guided by atomistic simulation, we addressed the issue of interface defects via tuning of the Al surface hydroxylation to increase the first atomic layer ALD coverage to ~75%, leading to improved memristor switching speed and endurance by several orders of magnitude. In conclusion, these findings shed light on the correlation between the atomic defects and the dynamic behavior of sub-2 nm memristors and the importance of minimizing the atomic defects in memristors for future electronic applications.

Atomic Layer Deposition↗
DOE OSTI2025

Supramolecular Control of Ionic Retention in Electrolyte-Gated Synaptic Transistors

Electrolyte-gated transistors with ion-trapping layers offer a promising platform for artificial synapses in neuromorphic computing, yet molecular mechanisms governing ionic retention remain poorly understood. Here, in this study, we present a supramolecular approach to modulate ion retention by incorporating a crown ether derivative-based polymer network as an ion-trapping layer on top of a semiconducting monolayer. We show that the balance between ion–host binding and ion–solvent interactions dictates the kinetics of ion capture and release, which in turn controls the memory characteristics of the device. By varying the solvent dielectric constant, we tune the ionic retention time from nearly permanent trapping to rapid relaxation. Intermediate solvent polarity enables programmable short- and long-term synaptic behaviors, including excitatory postsynaptic current, paired-pulse facilitation, and long-term potentiation and depression. These findings establish a direct link between supramolecular ion recognition and synaptic plasticity and provide a generalizable design strategy for ionic–electronic neuromorphic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Role of depth in optical diffractive neural networks

Free-space all-optical diffractive neural networks have emerged as promising systems for neuromorphic scene classification. Understanding the fundamental properties of these systems is important to establish their ultimate performance. Here we consider the case of diffraction by subwavelength apertures and study the behavior of the system as a function of the number of diffractive layers by employing a co-design modeling approach. We show that adding depth allows the system to achieve high classification accuracies with a reduced number of diffractive features compared to a single layer, but that it does not allow the system to surpass the performance of an optimized single layer. The improvement from depth is found to be limited to the first few layers. These properties originate from the constraints imposed by the physics of light, in particular the weakening electric field with distance from the aperture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Modulating charge transport via 2 MeV He + irradiation in VO 2

Vanadium dioxide (VO 2 ) is of interest for adaptive electronic applications such as neuromorphic neuristor devices and variable emissivity or tunable thermal control materials, thanks to its key property—a metal–insulator transition (MIT) at 68 °C that is accompanied by a dramatic change in electrical and optical properties. To improve performance in these roles, it is critical to develop approaches to engineer transport properties and the MIT behavior. While many documented techniques exist to modulate the MIT and film resistivities via lattice strain and chemical doping, less is known about the effects of ion irradiation on the intrinsic properties of VO 2 , despite the ability to control the spatial distribution of irradiation beams and the prevalence of high energy ion implantation in the semiconductor industry. The impact of irradiation of different acceleration energies on the responses of VO 2 is of specific interest, as charged particle energy generally impacts both the resulting defect profile and corresponding transport behavior. Here, we demonstrate that 2 MeV He ions at equivalent calculated displacements per atom, in two different types of films, can create remarkable changes to the nature of charge transport in VO 2 , especially in the low-temperature insulating phase. Simulation of resulting changes in electrical conductivity reveals that He ion irradiation offers a strategy to increase both oscillation frequency and the signal transmission. These results provide insights into the intentional design of defect populations to modulate transport for neuromorphic VO 2 devices.

Gurrola, Rebeca M. [Texas A & M Univ., College Sta↗
DOE OSTI2020

Quantum Memristors in Frequency-Entangled Optical Fields

A quantum memristor is a passive resistive circuit element with memory, engineered in a given quantum platform. It can be represented by a quantum system coupled to a dissipative environment, in which a system–bath coupling is mediated through a weak measurement scheme and classical feedback on the system. In quantum photonics, such a device can be designed from a beam splitter with tunable reflectivity, which is modified depending on the results of measurements in one of the outgoing beams. Here, we show that a similar implementation can be achieved with frequency-entangled optical fields and a frequency mixer that, working similarly to a beam splitter, produces state superpositions. We show that the characteristic hysteretic behavior of memristors can be reproduced when analyzing the response of the system with respect to the control, for different experimentally attainable states. Since memory effects in memristors can be exploited for classical and neuromorphic computation, the results presented in this work could be a building block for constructing quantum neural networks in quantum photonics, when scaling up.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Low-temperature emergent neuromorphic networks with correlated oxide devices

Significance Designing neuromorphic hardware for cryoelectronics is an important area of research as the field of computing paradigms beyond complementary metal-oxide-semiconductor (CMOS) progresses. Superconductivity and metal−insulator transitions are two of the most celebrated emergent, collective properties found in quantum materials such as strongly correlated oxides. Here, we present simulations of artificial neural networks that can be designed by combining superconducting devices (e.g. Josephson junctions) with Mott metal−insulator transition−based tunable resistor devices. Our simulations show that 1) neurons and synapses can be seamlessly created, 2) their functions can be tuned via learning, and 3) controlling disorder by incorporating light ions enables exponential multiplicity of states. The results open up directions for incorporating emergent behavior seen in condensed matter into hardware design for artificial intelligence.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

An interface-controlled Mott memristor in α -RuCl 3

Memristor devices have history-dependent charge transport properties that are ideal for neuromorphic computing applications. We reveal a memristor material and mechanism in the layered Mott insulator α-RuCl 3 . The pinched hysteresis loops and S-shaped negative differential resistance in bulk crystals verify memristor behavior and are attributed to a nonlinear coupling between charge injection over a Schottky barrier at the electrical contacts and concurrent Joule heating. Direct simulations of this coupling can reproduce the device characteristics.

Physics↗
DOE OSTI2025

Shape Anisotropy-Dependent Leaking in Magnetic Neurons for Bio-Mimetic Neuromorphic Computing

Spiking neural networks seek to emulate biological computation through interconnected artificial neuron and synapse devices. Spintronic neurons can leverage magnetization physics to mimic biological neuron functions, such as integration tied to magnetic domain wall (DW) propagation in a patterned nanotrack and firing tied to the resistance change of a magnetic tunnel junction (MTJ), captured in the domain wall-magnetic tunnel junction (DW-MTJ) device. Leaking, relaxation of a neuron when it is not under stimulation, is also predicted to be implemented based on DW drift as a DW relaxes to a low energy position, but it has not been well explored or demonstrated in device prototypes. Here, in this work, we study DW-MTJ artificial neurons capable of leaky integrate-and-fire (LIF) behavior and demonstrate geometry-dependent leaking dynamics that results in repeatable, tunable LIF operation. Studying the behavior of five different device designs, we show tuning the geometry, stimulating fields and currents, and location of electrical contacts results in a wide range of neuron behavior. Additionally, implementation of an asymmetric notch allows for nonlinear pinning which increased expressivity without sacrificing leaking. The measured behavior is implemented in a simulated spiking neural network that outperforms a 1D model of continuous DW motion and approaches the performance of an ideal LIF activation function. The results show that the analog LIF capability of DW-MTJ neurons combines many desirable neuron functions into a single device, which can result in varied forms of multifunctional neuromorphic computing.

42 ENGINEERING↗
DOE OSTI2024

Scaling neural simulations in STACS

Abstract As modern neuroscience tools acquire more details about the brain, the need to move towards biological-scale neural simulations continues to grow. However, effective simulations at scale remain a challenge. Beyond just the tooling required to enable parallel execution, there is also the unique structure of the synaptic interconnectivity, which is globally sparse but has relatively high connection density and non-local interactions per neuron. There are also various practicalities to consider in high performance computing applications, such as the need for serializing neural networks to support potentially long-running simulations that require checkpoint-restart. Although acceleration on neuromorphic hardware is also a possibility, development in this space can be difficult as hardware support tends to vary between platforms and software support for larger scale models also tends to be limited. In this paper, we focus our attention on Simulation Tool for Asynchronous Cortical Streams (STACS), a spiking neural network simulator that leverages the Charm++ parallel programming framework, with the goal of supporting biological-scale simulations as well as interoperability between platforms. Central to these goals is the implementation of scalable data structures suitable for efficiently distributing a network across parallel partitions. Here, we discuss a straightforward extension of a parallel data format with a history of use in graph partitioners, which also serves as a portable intermediate representation for different neuromorphic backends. We perform scaling studies on the Summit supercomputer, examining the capabilities of STACS in terms of network build and storage, partitioning, and execution. We highlight how a suitably partitioned, spatially dependent synaptic structure introduces a communication workload well-suited to the multicast communication supported by Charm++. We evaluate the strong and weak scaling behavior for networks on the order of millions of neurons and billions of synapses, and show that STACS achieves competitive levels of parallel efficiency.

59 BASIC BIOLOGICAL SCIENCES↗