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At least 55 records · Page 3

Exploration of Novel Neuromorphic Methodologies for Materials Applications

Many of today's most interesting questions involve understanding and interpreting complex relationships within graph-based structures. For instance, in materials science, predicting material properties often relies on analyzing the intricate network of atomic interactions. Graph neural networks (GNNs) have emerged as a popular approach for these tasks; however, they suffer from limitations such as inefficient hardware utilization and over-smoothing. Recent advancements in neuromorphic computing offer promising solutions to these challenges. In this work, we evaluate two such neuromorphic strategies known as reservoir computing and hyperdimensional computing. We compare the performance of both approaches for bandgap classification and regression using a subset of the Materials Project dataset. Our results indicate recent advances in hyperdimensional computing can be applied effectively to better represent molecular graphs.

Gobin, Derek [George Mason University, Virginia]

Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa 2 Cu 3 O x with Excess Cu Addition

Resistive switching technologies have the potential not only to create large efficiency gains in computer memory but also to revolutionize emerging fields such as neuromorphic computing. In this paper, we report on novel resistive switching behavior in devices made from room-temperature-grown Cu-rich amorphous YBa 2 Cu 3 O x (YBCO) films, a material otherwise well-known as a high-temperature superconductor. In Nb:STO substrate/amorphous YBCO film (≈200 nm)/metallic Cu (15 nm)/metallic Pt (15 nm) devices, we demonstrate that the resistive switching can be tuned between mechanisms involving extended areas of the YBCO/electrode interface and a single-point filamentary mechanism simply by changing the Cu content of the deposition target and hence in the films. Changing the Cu content can also be used to optimize the properties of the devices further, with devices with an added 15 mol % of Cu in YBCO initially providing an on/off ratio >100, switching endurance potential >6500 cycles, and state retention >2 × 10 4 s, all at low switching fields of 0.3 MV/cm. The amalgam of promising resistive switching properties, fast growth (150 nm/min) at room temperature, and tuneability of the switching mechanism indicates the strong potential of this proof-of-concept amorphous system for future memory applications.

Cu

Predicting Band-Gap of Inorganic Materials Using Neuromorphic Graph Learning

Predicting properties of inorganic materials is a heavily researched topic, with several new prediction approaches emerging as competitors. One such competitor is graph neural networks, which leverage the structure of the graph to aid in the prediction process. In this work, we propose integration of neuromorphic computation into the graph neural network pipeline. We call this approach Neuromorphic Graph Learning (NGL). We utilize the NGL approach to leverage evolutionary algorithms and a novel Spike Pipeline for Raster Analysis (SPIRE) for the prediction of band gap in inorganic materials.

Mulet, Ian [University of Tennessee (UT)]

Design of Hopfield Networks Based on Superconducting Coupled Oscillators

The global energy shortage has driven the development of many energy-efficient computational platforms beyond Moore's law, among which brain-inspired neuromorphic computing is one of the promising solutions. Associative memory and pattern recognition are important computations solved by brain-inspired Hopfield networks. Classical Hopfield networks store memories via fixed point attractors of their dynamics. In oscillatory Hopfield networks, these attractors are replaced by periodic orbits. Here, we design an oscillatory Hopfield network based on coupled superconducting oscillators. We first employ a mathematical phase reduction approach to map networks of coupled superconducting rapid single flux quantum (RSFQ) ring oscillators to coupled Kuramoto phase-oscillator networks. We use this theory to numerically optimize the hardware's mutual inductances in order to directly match the phase-reduced superconducting oscillators to a model of phase-oscillator-based Hopfield networks. The resulting network can store multiple oscillatory phase-locked memory patterns and recover the patterns based on the initial phase conditions. As different pattern recognition tasks, or learning, require tunable connectivity strengths between the oscillatory nodes, we further employ a coupler circuit that enables tuning the coupling strength between two oscillators by applying an external flux. We demonstrate the functionality of our design through numerical simulations of a small example network with oscillators operating at 86 GHz and recognizing patterns within 10 ns. Our approach enables the learning and retrieval of dynamical memory patterns with a wide range of applications where rhythmic dynamic output is beneficial.

Cheng, Ran

Magnetic Solitons and Thickness‐Dependent Magnetization Reversal in Interconnected Helical Nanowire Arrays

By expanding magnetic nanostructures into the third dimension, it is possible to introduce new interactions and realize new forms of magnetic textures and emergent phenomena. Consequently, this unlocks new opportunities for applications in data storage, unconventional computing and sensing by utilizing 3D devices with enhanced functionalities. Connected magnetic nanowires offer a unique platform for applications such as neuromorphic computing due to their tunability and the presence of multiple transport pathways. However to realize this promise, it is necessary to further our understanding of how to locally control the magnetization in 3D, nanowire-based geometries. In this work we show the formation of magnetic domain walls, vortices, anti-vortices, and linked vortex-anti-vortex pairs in interconnected helical nanowire arrays. We show how wire diameter and 3D geometric design can control the states that form and reveal the magnetization reversal mechanism. Hence, we demonstrate this to be a highly tunable system, where the magnetization can be readily reconfigured by an external magnetic field.

3D Nanomagnetism

Multifunctional electrochemical memory stabilized by phase coexistence

Our growing computing needs, especially in applications that heavily rely on artificial intelligence (AI), motivate a search for new components that could substantially augment the performance of general-purpose digital computers. Beyond ON/OFF switching, new components with linear multistate analog resistive tuning, nonlinear volatile switching, spiking, oscillatory, stochastic and other complex functionalities could enable highly efficient neuromorphic computing schemes for AI information processing. Compared to the extreme multifunctionality of biological neurons, realizing all the above characteristics in a single, scalable analog component remains a grand challenge. Here we investigate electrochemical gating combined with localized thermal activation to program and switch a single, vertically integrated and dimensionally scaled electrothermal chemical random access memory (ETCRAM) with a channel and reservoir composed of phase-separated vanadium oxide. Closely related to electrochemical RAM (ECRAM), ETCRAM uses an integrated gate-heater electrode to overcome kinetic barriers that help retain states at ambient temperatures. In addition to synapse-like stable and programmable analog resistance states arising from redox-tunable phase coexistence, a single component exhibits neuron-like nonlinear conductance switching with a tunable threshold and self-driven dynamics owing to the thermally driven metal-insulator phase transition in vanadium dioxide. More broadly, we demonstrate that electrochemically stabilized phase coexistence could unlock analog electronics with novel functionality, stability, reconfigurability, and scalability.

Oh, Sangheon [Sandia National Lab. (SNL-CA), Liver

Digital Technologies at NASA for Science and Engineering

While scientific and engineering advancements used to rely primarily on theoretical studies and physical experiments, today digital technology enabled by petaflops-scale supercomputers is an equal, if not a greater, contributor to such achievements. In addition, computational modeling and simulation serves as a predictive tool that is not otherwise available. As a result, the use of high performance computing is integral to NASA's work in all mission areas such as space exploration, aeronautics, and scientific discovery. But traditional supercomputing alone is not sufficient for all of the space agency's needs. The success of many NASA missions depends on solving complex computing challenges, some of which are NP-hard (decision theory) if using classical solution methods. Quantum computing promises an unprecedented ability to solve such intractable problems by harnessing quantum mechanical effects such as tunneling, superposition, and entanglement. Another disruptive digital technology is neuromorphic computing that uses brain-inspired lessons to generate new architectures that are much more energy efficient, and capable of massive parallel processing and learning in-situ. Finally, with large amounts of observational and computational data sets, the opportunities of big data and data analytics can be leveraged to enable deep learning and knowledge discovery - it's all a massive digital transformation. This talk will be an overview how NASA utilizes digital technologies for its science and engineering efforts.

Biswas, Rupak

Self‐Strain Suppression of the Metal‐to‐Insulator Transition in Phase‐Change Oxide Devices

Strongly correlated materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take advantage of structural phase transitions have inherent built‐in memory, reminiscent of synapses and neurons, and are thus natural candidates for neuromorphic computing. Of particular interest are phase‐change oxides, which allow for control over the metal‐to‐insulator transition. Here, X‐ray nano‐diffraction structural imaging of micro‐devices fabricated with the archetypal phase‐change material vanadium sesquioxide (V 2 O 3 ) is reported. The devices contain a Ga ion‐irradiated region where the metal‐to‐insulator transition critical temperature is lowered, a useful feature for controlling neuron‐like spiking behavior. Results show that strain, induced by crystal lattice mismatch between the pristine and irradiated material, leads to a suppression of the metal‐to‐insulator‐transition. Suppression occurs within the irradiated region or along its edges, depending on the defect‐distribution and the size of the region. The observed self‐straining effect can extend to other phase‐change oxides and dominate as device dimensions are reduced and become too small to dissipate strain within the irradiated region. The findings are important for phase engineering in phase‐change devices and highlight the necessity to study phase transitions at the nanoscale.

77 NANOSCIENCE AND NANOTECHNOLOGY

Modeling performance of data collection systems for high-energy physics

Exponential increases in scientific experimental data are outpacing silicon technology progress, necessitating heterogeneous computing systems—particularly those utilizing machine learning (ML)—to meet future scientific computing demands. The growing importance and complexity of heterogeneous computing systems require systematic modeling to understand and predict the effective roles for ML. We present a model that addresses this need by framing the key aspects of data collection pipelines and constraints and combining them with the important vectors of technology that shape alternatives, computing metrics that allow complex alternatives to be compared. For instance, a data collection pipeline may be characterized by parameters such as sensor sampling rates and the overall relevancy of retrieved samples. Alternatives to this pipeline are enabled by development vectors including ML, parallelization, advancing CMOS, and neuromorphic computing. By calculating metrics for each alternative such as overall F1 score, power, hardware cost, and energy expended per relevant sample, our model allows alternative data collection systems to be rigorously compared. We apply this model to the Compact Muon Solenoid experiment and its planned high luminosity-large hadron collider upgrade, evaluating novel technologies for the data acquisition system (DAQ), including ML-based filtering and parallelized software. The results demonstrate that improvements to early DAQ stages significantly reduce resources required later, with a power reduction of 60% and increased relevant data retrieval per unit power (from 0.065 to 0.31 samples/kJ). However, we predict that further advances will be required in order to meet overall power and cost constraints for the DAQ.

Olin-Ammentorp, Wilkie (ORCID:0000000224729862)

Evolution at the Edge: Real-Time Evolution for Neuromorphic Engine Control

Neuromorphic computing systems are attractive for real-time control at the edge because of their low power operation, real-time processing capabilities and their potential ability to do online learning. In this work, we describe an approach for performing real-time evolution of spiking neural networks for neuromorphic systems at the edge called Neuromorphic Optimization using Dynamic Evolutionary Systems or NODES. We apply this approach to real-time combustion engine control and develop an engine-specific hardware platform for NODES called FireBox. We demonstrate how the real-time evolution approach works in simulation and the performance of networks trained in simulation on the physical engine.

Maldonado Puente, Bryan [ORNL] (ORCID:000000033880

Citation network datasets for benchmarking spiking graph neural networks on experimental neuromorphic hardware

Spiking neural networks (SNNs) running on neuromorphic computers offer an energy-efficient alternative for AI tasks. Recently, spiking graph neural networks (S-GNNs) have been shown to produce encouraging results on benchmark citation network datasets such as Cora, CiteSeer, and PubMed for node classification tasks. These S-GNNs were run on SNN simulators only because they contain up to tens of thousands of neurons and up to millions of synapses, translating poorly to neuromorphic hardware. Therefore, in this paper, we create a suite of benchmark datasets from the CiteSeer dataset that can be accommodated on current neuromorphic hardware platforms. Our contribution consists of a collection of three datasets. First, we have an induced subgraph of CiteSeer, which we call MiniSeer, containing 2110 papers, 3604 binary features, and 6 topics. Second, MicroSeer is a very small dataset consisting of 84 papers, 1227 features, and 6 topics. Lastly, BiteSeer is a collection of 15 binary classification datasets. We present creation of these datasets along with accuracies, running times, and spike counts when simulated. We believe that our results in this paper will be used by the neuromorphic community to benchmark, test, and develop neuromorphic hardware and simulators.

Zhu, Kevin [George Mason University, Virginia]

Electrical Detection of Spin-Hall-Induced Auto-oscillations in Lithium Aluminate Ferrite Thin Films

Ferrimagnetic insulators with ultralow damping are of great interest for their potential applications in energy-efficient computing devices. Here, we report the direct electrical detection of magnetic auto-oscillations in unpatterned ultralow damping ferrimagnetic insulator epitaxial Li 0.5 Al 0.5 Fe 2 O 4 thin films, driven by a current in a proximal Pt nanowire. Auto-oscillations occur for only one current polarity, consistent with the spin-Hall effect inducing the oscillation state. Micromagnetic modeling shows good agreement with the experimental frequency and field dispersions, showing only one dominant oscillation mode, in contrast to the multiple modes typically observed in transition-metal nanowire-type spin-Hall nanooscillators. This study illustrates a new material system for neuromorphic computing and magnonics, a simple material platform with the direct-current generation of high-frequency (~10 GHz) signals and their electrical detection.

36 MATERIALS SCIENCE

NASA Small Spacecraft and Distributed Systems Program - Recent and Upcoming Technology Demonstrations and Development Efforts

NASA’s Small Spacecraft & Distributed Systems (SSDS) program strengthens U.S. ability to conduct unique missions by rapidly developing and demonstrating capabilities for SmallSat exploration, science, and commercial space. In collaboration with NASA Centers, other government agencies, commercial industry, and academia, SSDS advances next generation SmallSat technologies like power, processing, propulsion, communications, autonomous navigation, architectures (swarms), and applications (AI/ML/Edge Computing)—to extend missions beyond LEO into cislunar and planetary space. Various investment mechanisms exist for SSDS to select and fund projects that will ultimately advance NASA’s Moon to Mars Architecture. Presented here are the latest achievements and findings from recently completed SSDS projects, along with updates from ongoing efforts and planned future work. Successful missions like Starling and CAPSTONE continue to demonstrate their capability after several years on-orbit. Advancements in next generation swarm configurations are being implemented by Starling for space traffic monitoring and management applications. Findings from recent SSDS flight projects are discussed: DiskSat, a unique SmallSat platform alternative to canisterized nanosatellites, launched December 2025 and is gathering data; the PTD series of missions concluded in December 2025. Current SSDS efforts are focused on addressing NASA Shortfalls relating to rendezvous and proximity operations, neuromorphic computing, and space situational awareness.

Roger C Hunter

NASA Small Spacecraft and Distributed Systems: Recent and Upcoming Technology Demonstrations and Development Efforts

NASA’s Small Spacecraft & Distributed Systems (SSDS) program strengthens U.S. ability to conduct unique missions by rapidly developing and demonstrating capabilities for SmallSat exploration, science, and commercial space. In collaboration with NASA Centers, other government agencies, commercial industry, and academia, SSDS advances next generation SmallSat technologies like power, processing, propulsion, communications, autonomous navigation, architectures (swarms), and applications (AI/ML/Edge Computing)—to extend missions beyond LEO into cislunar and planetary space. Various investment mechanisms exist for SSDS to select and fund projects that will ultimately advance NASA’s Moon to Mars Architecture. Presented here are the latest achievements and findings from recently completed SSDS projects, along with updates from ongoing efforts and planned future work. Successful missions like Starling and CAPSTONE continue to demonstrate their capability after several years on-orbit. Advancements in next generation swarm configurations are being implemented by Starling for space traffic monitoring and management applications. Findings from recent SSDS flight projects are discussed: DiskSat, a unique SmallSat platform alternative to canisterized nanosatellites, launched December 2025 and is gathering data; the PTD series of missions concluded in December 2025. Current SSDS efforts are focused on addressing NASA Shortfalls relating to rendezvous and proximity operations, neuromorphic computing, and space situational awareness.

Roger Hunter

Supramolecular Control of Ionic Retention in Electrolyte-Gated Synaptic Transistors

Electrolyte-gated transistors with ion-trapping layers offer a promising platform for artificial synapses in neuromorphic computing, yet molecular mechanisms governing ionic retention remain poorly understood. Here, in this study, we present a supramolecular approach to modulate ion retention by incorporating a crown ether derivative-based polymer network as an ion-trapping layer on top of a semiconducting monolayer. We show that the balance between ion–host binding and ion–solvent interactions dictates the kinetics of ion capture and release, which in turn controls the memory characteristics of the device. By varying the solvent dielectric constant, we tune the ionic retention time from nearly permanent trapping to rapid relaxation. Intermediate solvent polarity enables programmable short- and long-term synaptic behaviors, including excitatory postsynaptic current, paired-pulse facilitation, and long-term potentiation and depression. These findings establish a direct link between supramolecular ion recognition and synaptic plasticity and provide a generalizable design strategy for ionic–electronic neuromorphic devices.

36 MATERIALS SCIENCE

Purely electronic insulator-metal transition in rutile VO 2

Volatile resistive switching in neuromorphic computing can be tuned by external stimuli such as temperature or electric-field. However, this type of switching is generally coupled to structural changes, resulting in slower reaction speed and higher energy consumption when incorporated into an electronic device. The vanadium dioxide (VO 2 ), which has near room temperature metal-insulator transition (MIT), is an archetypical volatile resistive switching system. Here, we demonstrate an isostructural MIT in an ultrathin VO 2 film capped with a photoconductive cadmium sulfide (CdS) layer. Transmission electron microscopy, resistivity experiments, and first-principles calculations show that the hole carriers induced by CdS photovoltaic effect are driving the MIT in rutile VO 2 . The insulating-rutile VO 2 phase has been proved and can remain stable for hours. Our finding provides a new approach to produce purely electronically driven MIT in VO 2 , and widens its applications in fast-response, low-energy neuromorphic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND

Epitaxial stabilization and oxygen vacancy control of EuNiO 3 thin films

Rare-earth nickelates exhibit valuable behavior for neuromorphic computing at low temperature: Building blocks for biologically inspired microelectronic neurons like electrically driven insulator–metal transitions (IMTs), negative differential resistance, and self-oscillations have been shown up to 230 K for SmNiO 3 and NdNiO 3 . EuNiO 3 raises the IMT far above room temperature (460 K) but high-quality thin films are challenging to synthesize. Here, we explore the epitaxial stabilization of EuNiO 3 using pulsed laser deposition. X-ray diffraction reciprocal space maps, x-ray absorption spectroscopy, and transmission electron microscopy show that higher growth temperature (800 °C) reduces oxygen vacancy concentrations in EuNiO 3 . Pseudomorphic EuNiO 3 is demonstrated on both SrLaAlO 4 and NdGaO 3 substrates, and LaNiO 3 buffer layers are incorporated to facilitate future vertical device fabrication. In contrast to bulk thermodynamic predictions, the greater oxidation and crystallinity at higher temperature we observe indicates that epitaxial substrates can stabilize EuNiO 3 at O 2 pressures less than 1 atm.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Abstract Resistive switching (RS) devices with ultra‐low‐voltage threshold and reliable switching repeatability exhibits great potential applications in energy‐efficient data storage and neuromorphic computing. Understanding switching mechanisms at nanoscale is critical to design RS devices with improved performance. In this work, a lamella memristive device using focused ion beam (FIB) method based on the metal/TiO x /TiN/Si structure device is fabricated. In situ transmission electron microscopy (TEM) and current–voltage ( I–V ) characteristic demonstrate that the lamella device shows a volatile RS behavior with a threshold switching at ≈ ± 0.4 V. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charge carriers such as oxygen vacancies migrate under positive/negative DC bias and modulate Schottky barriers at the top and bottom metal/semiconductor interfaces. The RS mechanism of the lamella device is based on the Schottky barriers modulation and Joule heating assisted electric field triggered thermal runaway (FTTR) occurred at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a perspective on interface‐type RS devices processing and opens up new technological opportunities of fabricating ultra‐low‐energy memristive devices.

36 MATERIALS SCIENCE