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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Electrical Switching of Perovskite Thin-Film Resistors

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Liu, Shangqing↗
NASA NTRS1982

Advanced CO2 removal process control and monitor instrumentation development

A progam to evaluate, design and demonstrate major advances in control and monitor instrumentation was undertaken. A carbon dioxide removal process, one whose maturity level makes it a prime candidate for early flight demonstration was investigated. The instrumentation design incorporates features which are compatible with anticipated flight requirements. Current electronics technology and projected advances are included. In addition, the program established commonality of components for all advanced life support subsystems. It was concluded from the studies and design activities conducted under this program that the next generation of instrumentation will be greatly smaller than the prior one. Not only physical size but weight, power and heat rejection requirements were reduced in the range of 80 to 85% from the former level of research and development instrumentation. Using a microprocessor based computer, a standard computer bus structure and nonvolatile memory, improved fabrication techniques and aerospace packaging this instrumentation will greatly enhance overall reliability and total system availability.

Heppner, D. B.↗
NASA NTRS1988

An automated ozone photometer

A photometer capable of automatically measuring ozone concentration data to very high resolution during scientific research flights in the Earth's atmosphere was developed at NASA Ames Research Center. This instrument was recently deployed to study the ozone hole over Antarctica. Ozone is detected by absorbing 253.7-nm radiation from an ultraviolet lamp which shines through the sample of air and impinges on a vacuum phototube. A lower output from the phototube indicates more ozone present in the air sample. The photometer employs a CMOS Z80 microprocessor with an STD bus system for experiment control, data collection, and storage. Data are collected and stored in nonvolatile memory for experiments lasting up to 8 hr. Data are downloaded to a portable ground-support computer and processed after the aircraft lands. An independent single-board computer in the STD bus also calculates ozone concentration in real time with less resolution than the CMOS Z80 system, and sends this value to a cockpit meter to aid the pilot in navigation.

Lavelle, Joseph R.↗
NASA NTRS1990

Nonvolatile Ionic Two-Terminal Memory Device

Conceptual solid-state memory device nonvolatile and erasable and has only two terminals. Proposed device based on two effects: thermal phase transition and reversible intercalation of ions. Transfer of sodium ions between source of ions and electrical switching element increases or decreases electrical conductance of element, turning switch "on" or "off". Used in digital computers and neural-network computers. In neural networks, many small, densely packed switches function as erasable, nonvolatile synaptic elements.

Williams, Roger M.↗
NASA NTRS1994

Nonvolatile GaAs Random-Access Memory

Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.

Katti, Romney R.↗
NASA NTRS1993

Reconfigurable fuzzy cell

This invention relates to a reconfigurable fuzzy cell comprising a digital control programmable gain operation amplifier, an analog-to-digital converter, an electrically erasable PROM, and 8-bit counter and comparator, and supporting logic configured to achieve in real-time fuzzy systems high throughput, grade-of-membership or membership-value conversion of multi-input sensor data. The invention provides a flexible multiplexing-capable configuration, implemented entirely in hardware, for effectuating S-, Z-, and PI-membership functions or combinations thereof, based upon fuzzy logic level-set theory. A membership value table storing 'knowledge data' for each of S-, Z-, and PI-functions is contained within a nonvolatile memory for storing bits of membership and parametric information in a plurality of address spaces. Based upon parametric and control signals, analog sensor data is digitized and converted into grade-of-membership data. In situ learn and recognition modes of operation are also provided.

Salazar, George A.↗
NASA NTRS2002

Evaluation of Data Retention and Imprint Characteristics of FRAMs Under Environmental Stresses for NASA Applications

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

Sharma, Asbok K.↗
NASA NTRS2000

Evaluation of Data Retention and Imprint Characteristics of FRAMs Under Environmental Stresses for NASA Applications

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs (Ferroelectric random access memories) is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

Sharma, Ashok K.↗
NASA NTRS2008

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗
NASA NTRS2007

Miniature Intelligent Sensor Module

An electronic unit denoted the Miniature Intelligent Sensor Module performs sensor-signal-conditioning functions and local processing of sensor data. The unit includes four channels of analog input/output circuitry, a processor, volatile and nonvolatile memory, and two Ethernet communication ports, all housed in a weathertight enclosure. The unit accepts AC or DC power. The analog inputs provide programmable gain, offset, and filtering as well as shunt calibration and auto-zeroing. Analog outputs include sine, square, and triangular waves having programmable frequencies and amplitudes, as well as programmable amplitude DC. One innovative aspect of the design of this unit is the integration of a relatively powerful processor and large amount of memory along with the sensor-signalconditioning circuitry so that sophisticated computer programs can be used to acquire and analyze sensor data and estimate and track the health of the overall sensor-data-acquisition system of which the unit is a part. The unit includes calibration, zeroing, and signalfeedback circuitry to facilitate health monitoring. The processor is also integrated with programmable logic circuitry in such a manner as to simplify and enhance acquisition of data and generation of analog outputs. A notable unique feature of the unit is a cold-junction compensation circuit in the back shell of a sensor connector. This circuit makes it possible to use Ktype thermocouples without compromising a housing seal. Replicas of this unit may prove useful in industrial and manufacturing settings - especially in such large outdoor facilities as refineries. Two features can be expected to simplify installation: the weathertight housings should make it possible to mount the units near sensors, and the Ethernet communication capability of the units should facilitate establishment of communication connections for the units.

Beech, Russell S.↗
NASA NTRS2003

Recovery of the Space Shuttle Columbia Avionics

Lessons Learned: a) Avionics data can playa critical role in the investigation of a "close call" or accident. b) Avionics designers should think about the role their systems might play in an investigation. c) Know your data, down to the bit level. d) Know your spacecraft - follow the data. e) Internal placement of circuit cards can affect their survivability. f) Think about how to reconstruct nonvolatile memory (e.g. serialize IC's, etc.) g) Use of external assets can aid in extracting data from avionics.

Hames, Kevin L.↗
NASA NTRS2011

NASA Tech Briefs, January 2011

The topics include: 1) Distributed Aerodynamic Sensing and Processing Toolbox; 2) Collaborative Supervised Learning for Sensor Networks; 3) Hazard Detection Software for Lunar Landing; 4) Onboard Nonlinear Engine Sensor and Component Fault Diagnosis and Isolation Scheme; 5) Network-Capable Application Process and Wireless Intelligent Sensors for ISHM; 6) Interface Supports Multiple Broadcast Transceivers for Flight Applications; 7) FPGA Sequencer for Radar Altimeter Applications; 8) Miniature Sapphire Acoustic Resonator - MSAR; 9) Process-Hardened, Multi-Analyte Sensor for Characterizing Rocket Plume Constituents; 10) SAD5 Stereo Correlation Line-Striping in an FPGA; 11) Hybrid Composite Cryogenic Tank Structure; 12) Nanoscale Deformable Optics; 13) Reliability-Based Design Optimization of a Composite Airframe Component; 14) Zinc Oxide Nanowire Interphase for Enhanced Lightweight Polymer Fiber Composites; 15) Plasma Igniter for Reliable Ignition of Combustion in Rocket Engines; 16) Wire Test Grip Fixture; 17) A Sub-Hertz, Low-Frequency Vibration Isolation Platform; 18) Carbon Nanofibers Synthesized on Selective Substrates for Nonvolatile Memory and 3D Electronics; 19) Nanoparticle/Polymer Nanocomposite Bond Coat or Coating; 20) High-Resolution Wind Measurements for Offshore Wind Energy Development; 21) Spring Tire; 22) Marsviewer 2008; 23) Mission Services Evolution Center Message Bus; 24) Major Constituents Analysis for the Vehicle Cabin Atmosphere Monitor; 25) Astronaut Health Participant Summary Application; 26) Adaption of the AMDIS Method to Flight Status on the VCAM Instrument; 27) Natural Language Interface for Safety Certification of Safety-Critical Software; 28) Cryogenic Caging for Science Instrumentation; 29) Wide-Range Neutron Detector for Space Nuclear Applications; 30) In Situ Guided Wave Structural Health Monitoring System; 31) Multiplexed Energy Coupler for Rotating Equipment; 32) Attitude Estimation in Fractionated Spacecraft Cluster Systems; 33) Full Piezoelectric Multilayer-Stacked Hybrid Actuation/Transduction Systems; 34) Active Flow Effectors for Noise and Separation Control; 35) Method and System for Temporal Filtering in Video Compression Systems; 36) Apparatus for Measuring Total Emissivity of Small, Low-Emissivity Samples; 37) Multiple-Zone Diffractive Optic Element for Laser Ranging Applications; 38) Simplified Architecture for Precise Aiming of a Deep-Space Communication Laser Transceiver; 39) Two-Photon-Absorption Scheme for Optical Beam Tracking; 40) High-Sensitivity, Broad-Range Vacuum Gauge Using Nanotubes for Micromachined Cavities; 41) Wide-Field Optic for Autonomous Acquisition of Laser Link; 42) Extracting Zero-Gravity Surface Figure of a Mirror; 43) Modeling Electromagnetic Scattering From Complex Inhomogeneous Objects; 44) Visual Object Recognition and Tracking of Tools; 45) Method for Implementing Optical Phase Adjustment; 46) Visual SLAM Using Variance Grid Maps; 47) Rapid Calculation of Spacecraft Trajectories Using Efficient Taylor Series Integration; 48) Efficient Kriging Algorithms; 49) Predicting Spacecraft Trajectories by the WeavEncke Method; 50) An Augmentation of G-Guidance Algorithms; 51) Comparison of Aircraft Icing Growth Assessment Software; 52) Silicon-Germanium Voltage-Controlled Oscillator at 105 GHz; 53) Estimation of Coriolis Force and Torque Acting on Ares-1; 54) Null Lens Assembly for X-Ray Mirror Segments; and 55) High-Precision Pulse Generator.

Source record↗
NASA NTRS2011

Network-Capable Application Process and Wireless Intelligent Sensors for ISHM

Intelligent sensor technology and systems are increasingly becoming attractive means to serve as frameworks for intelligent rocket test facilities with embedded intelligent sensor elements, distributed data acquisition elements, and onboard data acquisition elements. Networked intelligent processors enable users and systems integrators to automatically configure their measurement automation systems for analog sensors. NASA and leading sensor vendors are working together to apply the IEEE 1451 standard for adding plug-and-play capabilities for wireless analog transducers through the use of a Transducer Electronic Data Sheet (TEDS) in order to simplify sensor setup, use, and maintenance, to automatically obtain calibration data, and to eliminate manual data entry and error. A TEDS contains the critical information needed by an instrument or measurement system to identify, characterize, interface, and properly use the signal from an analog sensor. A TEDS is deployed for a sensor in one of two ways. First, the TEDS can reside in embedded, nonvolatile memory (typically flash memory) within the intelligent processor. Second, a virtual TEDS can exist as a separate file, downloadable from the Internet. This concept of virtual TEDS extends the benefits of the standardized TEDS to legacy sensors and applications where the embedded memory is not available. An HTML-based user interface provides a visual tool to interface with those distributed sensors that a TEDS is associated with, to automate the sensor management process. Implementing and deploying the IEEE 1451.1-based Network-Capable Application Process (NCAP) can achieve support for intelligent process in Integrated Systems Health Management (ISHM) for the purpose of monitoring, detection of anomalies, diagnosis of causes of anomalies, prediction of future anomalies, mitigation to maintain operability, and integrated awareness of system health by the operator. It can also support local data collection and storage. This invention enables wide-area sensing and employs numerous globally distributed sensing devices that observe the physical world through the existing sensor network. This innovation enables distributed storage, distributed processing, distributed intelligence, and the availability of DiaK (Data, Information, and Knowledge) to any element as needed. It also enables the simultaneous execution of multiple processes, and represents models that contribute to the determination of the condition and health of each element in the system. The NCAP (intelligent process) can configure data-collection and filtering processes in reaction to sensed data, allowing it to decide when and how to adapt collection and processing with regard to sophisticated analysis of data derived from multiple sensors. The user will be able to view the sensing device network as a single unit that supports a high-level query language. Each query would be able to operate over data collected from across the global sensor network just as a search query encompasses millions of Web pages. The sensor web can preserve ubiquitous information access between the querier and the queried data. Pervasive monitoring of the physical world raises significant data and privacy concerns. This innovation enables different authorities to control portions of the sensing infrastructure, and sensor service authors may wish to compose services across authority boundaries.

Figueroa, Fernando↗
NASA NTRS2011

Carbon-Based Nano-Electro-Mechanical-Systems

We provide an overview of our work where carbon-based nanostructures have been applied to two-dimensional (2D) planar and three-dimensional (3D) vertically-oriented nano-electro-mechanical (NEM) switches. In the first configuration, laterally oriented single-walled nanotubes (SWNTs) synthesized using thermal chemical vapor deposition (CVD) were implemented for forming bridge-type 2D NEMS switches, where switching voltages were on the order of a few volts. In the second configuration, vertically oriented carbon nanofibers (CNFs) synthesized using plasma-enhanced (PE) CVD have been explored for their potential application in 3D NEMS. We have performed nanomechanical measurements on such vertically oriented tubes using nanoindentation to determine the mechanical properties of the CNFs. Electrostatic switching was demonstrated in the CNFs synthesized on refractory metallic nitride substrates, where a nanoprobe was used as the actuating electrode inside a scanning-electron-microscope. The switching voltages were determined to be in the tens of volts range and van der Waals interactions at these length scales appeared significant, suggesting such structures are promising for nonvolatile memory applications. A finite element model was also developed to determine a theoretical pull-in voltage which was compared to experimental results.

Complementary-Metal-Oxide-Semiconductor (CMOS)↗
NASA NTRS2012

NAND flash screening and qualification guideline for space application

All space missions have a need for nonvolatile memory (NVM), which maintains data integrity when unpowered. Types of NVM include PROM, EEPROM, NOR Flash, and NAND Flash. PROMs, NOR Flash, and EEPROMs are good choices for storing smaller file size data such as boot code or FPGA configurations. These products have excellent data retention characteristics and can reliably store data for years, unpowered, without any data corruption. They can also be read many times without disturbing the data. Another application of NVM is storage of science and engineering data, which requires large of amounts of memory. The highest density memories available today are SDRAM and NAND Flash. However, the power required to operate and store data in NAND Flash is far less than SDRAM. Wherever high density and low power is required, NAND Flash is very attractive.

Heidecker, Jason↗
NASA NTRS2012

Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Irom, Farokh↗
NASA NTRS2012

Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Allen, Gregory R.↗