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Results for “photoconductive switch”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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49 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Ultra Wide Bandgap Laser Addressable Photoconductors

Wide Band Gap (WBG) and Ultra Wide Band Gap (UWBG) photoconductors have the potential to meet several critical mission needs for LLNL and the broader USG due to their exceptional characteristics related to large critical electric field. In particular, high energy laser systems such as the National Ignition Facility would benefit from the development of new materials for active optical devices such as the Optically Addressable Light Valve (OALV) used in the Programmable Spatial Shaper System. Missions in Global Security would benefit from higher performance Photoconductive Semiconductor Switches for pulsed power and radiofrequency amplifiers. This project examined the suitability of both commercially available and custom synthesized semi insulating WBG and UWBG materials for several of these applications. We developed high laser damage threshold OALVs for optical systems based on several of these materials as well as new RF, pulsed power, and power electronics devices based on the same. These devices show superior power handling in terms of laser damage threshold, electric field, and power output. A number of the technologies developed have been transitioned to both internal and external customers.

42 ENGINEERING↗
DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗
NASA NTRS1968

Guidance and control research

Effective work function of metal contacts to vacuum cleaved photoconducting cadmium sulfide, Curie point switching experiments, and germanium diodes for noise measurements

Source record↗
NASA NTRS1990

Optical interconnections and networks; Proceedings of the Meeting, The Hague, Netherlands, Mar. 14, 15, 1990

The conference presents papers on interconnections, clock distribution, neural networks, and components and materials. Particular attention is given to a comparison of optical and electrical data interconnections at the board and backplane levels, a wafer-level optical interconnection network layout, an analysis and simulation of photonic switch networks, and the integration of picosecond GaAs photoconductive devices with silicon circuits for optical clocking and interconnects. Consideration is also given to the optical implementation of neural networks, invariance in an optoelectronic implementation of neural networks, and the recording of reversible patterns in polymer lightguides.

Bartelt, Hartmut↗
DOE OSTI2025

Purely electronic insulator-metal transition in rutile VO 2

Volatile resistive switching in neuromorphic computing can be tuned by external stimuli such as temperature or electric-field. However, this type of switching is generally coupled to structural changes, resulting in slower reaction speed and higher energy consumption when incorporated into an electronic device. The vanadium dioxide (VO 2 ), which has near room temperature metal-insulator transition (MIT), is an archetypical volatile resistive switching system. Here, we demonstrate an isostructural MIT in an ultrathin VO 2 film capped with a photoconductive cadmium sulfide (CdS) layer. Transmission electron microscopy, resistivity experiments, and first-principles calculations show that the hole carriers induced by CdS photovoltaic effect are driving the MIT in rutile VO 2 . The insulating-rutile VO 2 phase has been proved and can remain stable for hours. Our finding provides a new approach to produce purely electronically driven MIT in VO 2 , and widens its applications in fast-response, low-energy neuromorphic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices

Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. Notably, these emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, we review recent progress towards memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality.

14 SOLAR ENERGY↗
DOE OSTI2024

Sensitivity Enhancement in Photoconductive Light Field Sampling

Abstract The emerging field of lightwave electronics is driving optoelectronic information processing beyond current classical limitations and has the potential to eventually reach petahertz frequencies. One of the major obstacles in reaching not only higher switching frequencies but also higher repetition rates with low‐power light sources is the efficiency of related devices. A device is presented based on a multilayered material that shows a 13‐fold enhancement in terms of converting light to electric current compared to bulk solids. Furthermore, the device exhibits an almost flat intensity response within its working range. The outstanding properties of engineered multilayered devices promise to push technology for lightwave electronics applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

CeO 2 Doping of Hf 0.5 Zr 0.5 O 2 Thin Films for High Endurance Ferroelectric Memories

Ferroelectric switching is demonstrated in CeO 2 -doped Hf 0.5 Zr 0.5 O 2 (HZCO) thin films with application in back-end-of-line compatible embedded memories. At low cerium oxide doping concentrations (2.0–5.6 mol%), the ferroelectric orthorhombic phase is stabilized after annealing at temperatures below 400 °C. HZCO ferroelectrics show reliable switching characteristics beyond 10 11 cycles in TiN/HZCO/TiN capacitors, several orders of magnitude greater than identically processed Hf 0.5 Zr 0.5 O 2 (HZO) capacitors, without sacrificing polarization and retention. Internal photoemission and photoconductivity experiments show that CeO 2 -doping introduces in-gap states in HZCO that are nearly aligned with TiN Fermi level, facilitating electron injection through these states. Furthermore, the enhanced average bulk conduction, which may lead to more uniform thermal dissipation in the HZCO films, delays irreversible degradation via breakdown that leads to device failure after repeated programming cycles.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Blocked impurity band hybrid infrared focal plane arrays for astronomy

High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.

Reynolds, D. B.↗
DOE OSTI2022

Terahertz Detection Using Enhanced Two‐Step Absorption in Photoconductive Metasurfaces Gated at λ = 1.55 µm

Abstract Superior ultrafast photoconductive properties make low temperature grown (LT) GaAs one of the best materials for photoconductive terahertz (THz) detection. However, the large bandgap of LT‐GaAs limits its operation to gating at wavelengths shorter than 870 nm. Here, it is demonstrated for the first time that nanostructuring the LT‐GaAs into a highly absorbing metasurface enables THz photoconductive detection with a pulsed laser at λ = 1.55 µm. The very weak sub‐bandgap absorption mediated by midgap states in LT‐GaAs is strongly enhanced using the concept of perfect absorption via degenerate critical coupling. Integrated with a THz antenna, the LT‐GaAs metasurface enables high sensitivity THz detection with a high dynamic range of 60 dB and large bandwidth up to 4.5 THz. The LT‐GaAs metasurface has the potential to serve as a universal ultrafast switching element for THz applications, enabling low‐cost, turn‐key THz systems for a variety of real‐world applications.

Jung, Hyunseung↗
DOE OSTI2024

Coupling strongly correlated electron systems to a tunable electronic reservoir

Here, we study the effect of coupling an electronic reservoir to a Hubbard model and to a dimer Hubbard model. This is motivated by recent experiments on the effect of illumination on the insulator-metal transition in a vanadium oxides and photoconductive cadmium sulfide heterostructure. We model the system as an electronic reservoir hybridized to the correlated system. We assume that the light intensity controls the hybridization coupling strength. We find that the light intensity acts similarly as the temperature in the weak interaction regime. This is consistent with the role played by electronic reservoirs in out-of-equilibrium systems. In contrast, qualitative differences appear at strong coupling. We show that modeling the V 2 ⁢O 3 compound with a Hubbard model, our results describe qualitatively well the observed illumination-driven suppression of the insulator-metal transition. In contrast, in the DHM results fail to capture the mild suppression observed in the case of VO 2 . This indicates that the lattice may play an important role in this case.

Materials Science↗