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A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.
The Lewis/OAST program for the development of Component Technology for Space Power Systems is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and thermal control devices. Examples of progress in each of the five areas is discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 mu sec rise and fall time are presented. A new class of semiconductor devices with a possibility of switching 1000 000 V is described. Several 100 kW rotary power transformer designs and a 25 kW, 20 kHz transformer weighting 3.2 kg have been developed. Progress on the creation of diamond-like films for thermal devices and intercalated carbon fibers with the strength of steel and the conductivity of copper at one third the mass of copper is presented.
Progress made by NASA toward implementation of equipment for the conversion, management, and distribution of voltage power in space applications are reviewed. Work has been carried forward on components such as bipolar transistors, deep impurity semiconductors, conductors, dielectrics, magnetic devices, and rotary power transfer. Specific programs for the high voltage systems have included research on lightweight, low-cost conductors featuring graphite fibers containing electron donor materials for wires and cables with reduced mass and the conductivity of copper. Attention has also been given p-n junction technology for high-speed, high-current, high-voltage materials and diamond-like dielectric films which are hard, have high dielectric strength, and can operate up to 300 C. A transistor has been fabricated with a voltage of 1200 V at 100 A, with a gain of 10 and a 0.5 microsec rise/fall time. A 25 kW transformer has also been built which performs at 20 kHz with an efficiency of 99.2%.
Advanced power electronic components development for space applications is discussed. The components described include transformers, inductors, semiconductor devices such as transistors and diodes, remote power controllers, and transmission lines.
Environmental and electrical testing of silicon, fused, N-P-N, power transistor
Both physical and economic considerations indicate that the scaling era of CMOS will run out of steam around the year 2010. However, physical laws also indicate that it is possible to compute at a rate of a billion times present speeds with the expenditure of only one Watt of electrical power. NASA has long-term needs where ultra-small semiconductor devices are needed for critical applications: high performance, low power, compact computers for intelligent autonomous vehicles and Petaflop computing technology are some key examples. To advance the design, development, and production of future generation micro- and nano-devices, IT Modeling and Simulation Group has been started at NASA Ames with a goal to develop an integrated simulation environment that addresses problems related to nanoelectronics and molecular nanotechnology. Overview of nanoelectronics and nanotechnology research activities being carried out at Ames Research Center will be presented. We will also present the vision and the research objectives of the IT Modeling and Simulation Group including the applications of nanoelectronic based devices relevant to NASA missions.
Both physical and economic considerations indicate that the scaling era of CMOS will run out of steam around the year 2010. However, physical laws also indicate that it is possible to compute at a rate of a billion times present speeds with the expenditure of only one Watt of electrical power. NASA has long-term needs where ultra-small semiconductor devices are needed for critical applications: high performance, low power, compact computers for intelligent autonomous vehicles and Petaflop computing technolpgy are some key examples. To advance the design, development, and production of future generation micro- and nano-devices, IT Modeling and Simulation Group has been started at NASA Ames with a goal to develop an integrated simulation environment that addresses problems related to nanoelectronics and molecular nanotecnology. Overview of nanoelectronics and nanotechnology research activities being carried out at Ames Research Center will be presented. We will also present the vision and the research objectives of the IT Modeling and Simulation Group including the applications of nanoelectronic based devices relevant to NASA missions.
This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.
Report evaluates effects of power and temperature overstress on General Semiconductor and Transitron devices. General Semiconductor lot exceeded 50 percent failure 500 hours into 125 percent maximum rated power test. Catastrophic failure rates differed between manufacturers. Modes of failure are analyzed.
Thermoelectric microgenerators are an approach to power conversion which can deliver milliwatts to watts of power at a few to several tens of volts.
Quasi-optical oscillators were proposed a little more than ten years ago as a means of developing the power levels needed for applications at millimeter frequencies using large numbers of individual semiconductor devices each of which produces only a modest amount of power [J.W. Mink, IEEE Trans. MTT., vol. 34, p. 273, 19861. An operating system was demonstrated soon after [Z.B. Popovic et. al, Int. J. Infrared and Millimeter Waves, v. 9, p. 647, 1988] in the form of a so-called grid oscillator. This device constituted a rectangular array of oscillating devices that are mutually coupled so that they oscillator coherently. The interconnecting lines in one direction serve as radiators so that the oscillators radiate directly, and the radiated fields add. Subsequently, coupled oscillators using resonant transmission line lengths was demonstrated by Mortazawi and Itoh [IEEE Trans. MTT., vol. 38, p. 86,1990). In recent work, coupled-oscillator power combiners have received less attention, with amplifier/combiners receiving more attention. Specific weaknesses of spatial-combining oscillators have motivated this transition. Namely, the oscillators employ low-Q resonators (resulting in low signal quality) and no clear means of modulation has been identified until recently. In this presentation, we review coupled-oscillator combiners in broad terms, indicating the features that make particular systems viable. We indicate how these features can be reconciled to functional requirements for system applications. Comparisons are drawn between two approaches to obtain mutual coupling: One employs low-Q oscillator circuits at each site, with concomitantly high propensity for the oscillators to couple. The other approach employs moderate-Q oscillators at each site with the concomitant requirement to tune the oscillators so that they share a range of frequencies over which they can couple and lock. In either case, precise frequency control and modulation can be achieved through locking to an external frequency source that ensures high quality signals. A recent development in coupled-oscillator arrays provides a means for beam-steering the radiation field of coupled oscillators through de-tuning of the edge elements in the array. This detuning introduces a progressive phase shift across the oscillator array. This 0 suggests architectures that can replace the functionality of a phased array without the cost 0 incurred by phase shifters. A comprehensive theory of the phase interactions among devices in such arrays is under development [e.g., Pogorzelski, York, and Maccarini, 1998 AP-S International Symposium, Atlanta, GA. June, 19981.
The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.
Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.
The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.
The insertion of power electronics in aerospace technologies is becoming widespread. The application of semiconductor devices and electronic converters, as summarized in this paper, includes the International Space Station, satellite power system, and motor drives in 'more electric' technology applied to aircraft, starter/generators and reusable launch vehicles. Flywheels, servo systems embodying electromechanical actuation, and spacecraft on-board electric propulsion are discussed. Continued inroad by power electronics depends on resolving incompatibility of using variable frequency for 400 Hz-operated aircraft equipment. Dual-use electronic modules should reduce system development cost.
Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).
The driving force behind SiGe development is the potential for high frequency and high power devices that provide comparable functionality as more expensive semiconductors such as InP and GaAs, but at a much lower cost. Additional advantages are the potential for incorporating SiGe devices onto monolithic Si chips and fabricating entire systems, such as receiver front-ends or RF power amplifiers, on a single chip. The work reported in this paper summarizes the materials and simulation aspects of a much larger project, which will eventually lead to SiGe HBT amplifiers with output powers greater than 1 W and over 35 dB gain at X-band frequencies. To achieve these goals, accurate analysis of the materials properties, especially in the base region, and highly refined amplifier design procedures must be established. In this paper we report the precision that may be obtained using optical ellipsometry to monitor the base and emitter thicknesses and Ge content of the base. We also report the extent of crystalline degradation in state-of-the-art SiGe films with high Ge contents. The objective of this work is to access the materials quality of HBT structures, and then use this data to model how various defects impact device performance, and which defects are most likely to limit high power and/or high frequency performance.
Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.