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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Satellite-Based Assessment of Sediment Transport, Distribution and Resuspension Associated with the Atchafalaya River Discharge Plume

Tbe Atchafalaya River discharges over 80 x 10(exp 6) tons of sediment annually onto the broad shallow continental shelf of central and western Louisiana. Satellite imagery from the NOAA AVHRR and Terra MODIS are used in this paper to quantify suspended sediment concentrations and to assess sediment transport processes along the Louisiana shelf under varying conditions of river discharge and wind forcing. The image data reveal the maim sources of sediment, direction of transport amd regional extent of wind-wave resuspension. The prevailing easterly winds transport much of the suspended sediments westward toward the Chernier Plain in a well-defined mud stream. Westerly flow rates of 25-50 cm/s (21-43 km per day) have been measured, yielding a transit time of about 1.5-2.5 days from the mouth of Atchafalaya Bay to the Chernier Plain. Progradation rates along the Chernier Plain coast reach 50 m per year. The westward-flowing Atchafalaya "mud stream" is rapidly disrupted by westerly winds and northerly winds, which accompany frequent winter storms and less frequent tropical storms or hurricanes. During these events, the coastal current reverses and sediments are rapidly transported out of Atchafalaya Bay and offshore where substantial sedimentary deposits can also be found. Offshore sediment fluxes during storm events, in combination with wind-wave resuspension, can result in surface sediment "plumes" extending 70 km offshore and 150 km alongshore. Field measurements of suspended sediment concentrations, current and wind velocities, and directions are used to assess sediment transport processes on the shelf. These combined processes are extending the pro-delta deposits of the Atchafalaya-Wax Lake delta complex far onto the continental shelf and supplying sediments for a renewal era of progradation along tbe downdrift Chernier Plain coast.

Walker, Nan↗
NASA NTRS1973

Inherent redundacy electric heater

A cross-wound electrical heater comprising two resistance coils wound together with opposite pitches electrically connected at their crossing points, is reported. Each element is supplied by a separate power supply of the same magnitude, and each power supply is isolated from reverse currents by a diode. Failure of one of the windings results in only a moderate change in output power.

Kernodle, B. H.↗
NASA NTRS1975

Investigation of electroforming techniques

Copper and nickel electroforming was examined for the purpose of establishing the necessary processes and procedures for repeatable, successful fabrication of the outer structures of regeneratively cooled thrust chambers. The selection of electrolytes for copper and nickel deposition is described. The development studies performed to refine and complete the processes necessary for successful chamber shell fabrication and the testing employed to verify the applicability of the processes and procedures to small scale hardware are described. Specifications were developed to afford a guideline for the electroforming of high quality outer shells on regeneratively cooled thrust chamber liners. Test results indicated repeatable mechanical properties could be produced in copper deposits from the copper sulfate electrolyte with periodic current reversal and in nickel deposits from the sulfamate solution. Use of inert, removable channel fillers and the conductivizing of such is described. Techniques (verified by test) which produce high integrity bonds to copper and copper alloy liners are discussed.

Malone, G. A.↗
NASA NTRS1974

Gate-controlled-diodes in silicon-on-sapphire: A computer simulation

The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model.

Gassaway, J. D.↗
NASA NTRS1980

Energetic particles in solar flares

The various manifestations of energetic particles in solar flares are examined, and possible mechanisms for the acceleration of these particles are considered. Hard X-ray observations and possible mechanisms for the production of the dominant form of solar energetic particles, electrons with energies between 10 and 100 keV, are discussed, with consideration of thin-target models, thick-target models and thick-target models with reverse currents, and first-phase acceleration mechanisms for energetic electrons emitting impulsive microwave and fast-drift Type III radio bursts as well as impulsive hard X rays, which are detected themselves 20 min after the flare at 1 AU are considered. Radio evidence on the number, energy and pitch-angle distributions of energetic particles produced during solar flares is summarized, and observations at 1 AU of proton and electron energy spectra, the proton/electron ratio and energetic particle events rich in He-3 from solar flares are discussed. Finally, consideration is given to gamma-ray evidence of nuclear reactions in flares and white-light flares

Ramaty, R.↗
NASA NTRS1984

T/R switch design for short-range measurements, part 6.1A

The positive intrinsic negative (PIN) diode switch which is designed to protect the receiver from burnout or damage on transmission and channel the echo signal to the receiver on reception is outlined. The receiver must be protected firmly. A schematic diagram of a transformer rectifier (TR-ATR) switch for the Urbana Radar is shown. The T/R switch consists of a half wavelength coaxial cavity with tuning condenser and PIN diodes. Two UM4300 PIN diodes were mounted between the inner and outer conductor. The dc biasing voltage required for the PIN diodes is supplied by a control circuit. On transmission, the PIN diodes are forward biased to about 0.5 amperes. On reception, about 10 volts reverse voltage is applied to the diodes, which produces an initial reverse current to speed the recovery time. The T/R switch characteristics are estimated and the result of testing at different peak transmitter powers from 410 kW to 1500 kW is shown.

Yu, B.↗
NASA NTRS1985

Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min.

Valco, G. J.↗
NASA NTRS1986

New models for fast steady state magnetic reconnection

A new unified family of models for incompressible, steady-state magnetic reconnection in a finite region is presented. The models are obtained by expanding in powers of the Alfven Mach number and may be used to elucidate some of the puzzling properties of numerical experiments on reconnection which are not present in the classical models. The conditions imposed on the inflow boundary of the finite region determine which member of the family occurs. Petscheklien and Sonnerup like solutions are particular members. The Sonneruplike regime is a special case of a weak slow mode expansion in the inflow region, and it separates two classes of members with reversed currents. The Petscheklike regime is a singular case of a weak fast mode expansion, and it separates the hybrid regime from a regime of slow mode compressions. Care should be taken in deciding which type of reconnection is operating in a numerical experiment. Indeed, no experiment to date has used boundary conditions appropriate for demonstrating steady state Petschek reconnection.

Priest, E. R.↗
NASA NTRS1988

Current-driven resistive ballooning modes in axially bounded solar flare plasmas

The most unstable current-driven resistive modes of an axially bounded coronal loop are found in computer simulations to exhibit the spatial structure of ballooning modes. The observed modes are not confined to mode rational surfaces, but instead have broad radial extent. A theory assuming ballooning mode spatial structure predicts that a minimum current should be required for linear instability, and that, when the mode is unstable, the linear growth rate scales linearly with the resistivity eta below a critical resistivity, and scales as cu root of eta for larger resistivities. Both predictions are borne out by simulation results. Both theory and simulation analyses of the mode suggest that the strong radial structure of the mode near the ends of the system is the primary contributing factor to the instability of the mode. A helical current sheet is formed in the nonlinear evolution of the mode near the edge of the current channel and is accompanied by a strong radial gradient in the current and partial current reversal.

Otani, Niels F.↗
NASA NTRS1992

Post-flight characterization of optical system samples, thermal control samples, and detectors from LDEF experiment M0003, sub-experiments 6 and 13

Flight samples and control samples of optical and thermal control coatings have been measured for hemispheric reflectance and transmission. Data was recorded for wavelengths from .25 microns to 18 microns. The samples were exposed directly to the orbital environment, but were on the trailing edge of the LDEF satellite. Preliminary analysis shows no significant change in the reflectance or transmission values of most of the samples. Post-flight tests of avalanche photodiodes have yielded results. The tests consist of measuring the following detector parameters: breakdown voltage for set values of reverse current, responsivity vs. bias voltage, noise equivalent power, and uniformity of photoresponse. The avalanche photodiodes were mounted on the leading edge of the LDEF satellite, but were shielded from the outside by a silver-coated teflon foil cover. Small puncture holes are present in the foil, probably caused by impact of particles in orbit. For most of the detectors, there has been no significant change in noise or response.

Randall R Hodgson↗
NASA NTRS1992

Planar doped barrier subharmonic mixers

The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic mixers. We have fabricated such devices with barrier heights of 0.3, 0.5 and 0.7 volts from GaAs and InGaAs using a multijunction honeycomb structure with junction diameters between one and ten microns. Initial RF measurements are encouraging. The 0.7 volt barrier height 4 micron GaAs devices were tested as subharmonic mixers at 202 GHz with an IF frequency of 1 GHz and had 18 dB of conversion loss. The estimated mismatch loss was 7 dB and was due to higher diode capacitance. The LO frequency was 100.5 GHz and the pump power was 8 mW.

Lee, T. H.↗
NASA NTRS2023

Proton Test Report Micropac 66212-300 Optocoupler

The purpose of this test was to determine the displacement damage and total ionizing dose sensitivity of Micropac’s 66212 optocoupler. During the test, the device was exposed to protons. Device parameters such as CTR, reverse current, and forward voltage were investigated.

displacement damage↗
NASA NTRS1989

Pulsed, high-current, in-line reversal electron attachment detector

A new, pulsed, high-current, in-line reversal electron attachment ionizer/detector is described. The ionizer is capable of delivering a beam of electrons into an electrostatic mirror field to form a planar wall of electrons having zero kinetic energy. Electron attachment to a molecular target at the reversal point produces either parent or fragment negative ions through a zero-energy (s-wave) state. The atomic or molecular ion is pulsed out of the attachment region approximately 2 microsec after the electrons are pulsed off, and focused onto the entrance plane of a quadrupole mass analyzer. The sensitivity of the apparatus is preliminarily assessed, and its higher-energy behavior with regard to molecular attachment and ionization is described.

Bernius, Mark T.↗
NASA NTRS1991

Simulations of pulsed electron beam injection during active experiments

Two-dimensional electromagnetic particle simulations are used to investigate the characteristics of the spacecraft charging, particle acceleration, and wave emissions during beam injection, turnoff and subsequent pulsing of the beam. It is shown that, during beam injection, the beam current is neutralized by a spatially separate return current region extending several tens of meters from the beam region, with the currents being closed across the field lines by the perpendicular acceleration of ambient plasma ions into the beam region. After beam turnoff, this current system reverses after a time lag of about an ion plasma period. The current reversal is accompanied by prolonged electron collection by the spacecraft near the beam region, preferential ion collection by sections of the spacecraft magnetically connected to the initial return current regions, and the creation of hot plasma extending well into the return current regions. Because of the time lag, the currents induced in the plasma during periodic beam injection can be strongly modified from the imposed beam current.

Winglee, R. M.↗
NASA NTRS1976

Field-aligned currents observed by the Ogo 5 and Triad satellites

The Triad (at a height of 800 km) and Ogo 5 (in the high altitude magnetosphere) magnetic field observations have shown the existence of a field-aligned current system consisting of currents flowing in the polar cap boundary layer and those flowing in another layer located equatorward of the former. In the polar cap boundary layer (identified as the high-latitude boundary of the plasma sheet in the nightside magnetosphere), the current flows into the ionosphere on the morning side and away from the ionosphere on the afternoon side. In the lower-latitude layer, the current directions are reversed. The current in the polar cap boundary layer is considered as the primary field-aligned current system.

Sugiura, M.↗
NASA NTRS2011

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

Teverovsky, Alexander A.↗