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Results for “semiconductor device radiation effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.

Aveline, David C.↗
NASA NTRS1974

Radiation hardening of MOS devices by boron

A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.

Danchenko, V.↗
NASA NTRS1969

Radiation tolerant silicon nitride insulated gate field effect transistors

Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.

Newman, P. A.↗
DOE OSTI2020

Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Most electrical characterization of radiation damage to semiconductors is conducted on full devices or on low‐doped material. However, evaluating the radiation hardness is challenging in less mature semiconductor systems where low‐doped material is unavailable and full devices are difficult to realize. Herein, temperature‐dependent Hall effect measurements are used to demonstrate α particle‐induced radiation effects in p‐type 4H‐SiC with a room temperature hole concentration of . The 4H‐SiC is irradiated by α particles from a 210 Po source over a fluence of –. Modeling the hole concentration as a function of temperature shows that α radiation causes hole compensation through the introduction of hole traps. The radiation also induces a reduction in hole mobility due to an increase in defect‐related scattering centers. At low temperatures and increasingly higher fluences, the conduction mechanism changes from band conduction to another mechanism.

Frye, Clint D.↗
NASA NTRS2008

Radiation effects assessment of MRAM devices

The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions.

McClure, Steve↗
DOE OSTI2022

Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

This paper analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. Additionally, the chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.

3-D NAND Flash↗
DOE OSTI2021

Identification of localized radiation damage in power MOSFETs using EBIC imaging

The rapidly increasing use of electronics in high-radiation environments and the continued evolution in transistor architectures and materials demand improved methods to characterize the potential damaging effects of radiation on device performance. Here, electron-beam-induced current is used to map hot-carrier transport in model metal-oxide semiconductor field-effect transistors irradiated with a 300 KeV focused He + beam as a localized line spanning across the gate and bulk Si. By correlating the damage to the electronic properties and combining these results with simulations, the contribution of spatially localized radiation damage on the device characteristics is obtained. Furthermore, this identified damage, caused by the He + beam, is attributed to localized interfacial P b centers and delocalized positive fixed-charges, as surmised from simulations. Comprehension of the long-term interaction and mobility of radiation-induced damage are key for future design of rad-hard devices.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1996

Analysis of space radiation data of semiconductor memories

This article presents an analysis of radiation effects for several select device types and technologies aboard the Combined Release and Radiation Effects Satellite (CRRES) satellite. These space-flight measurements covered a period of about 14 months of mission lifetime. Single Event Upset (SEU) data of the investigated devices from the Microelectronics Package (MEP) were processed and analyzed. Valid upset measurements were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devices were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented.

Flight Experiment↗
NASA NTRS1995

Radiation Effects in Photonic Modulator Structures

%T Radiation Effects in Photonic Modulator Structures%A Charles Barnes%A Roger Greenwell%J SPIE, Photonics for Space Environments%C Orlando, Florida, U.S.A.%D April 18-20, 1995%K Radiation%K Photonic Modulator Structures%U http://techreports.jpl.nasa.gov/1995/95-1057.pdfA review is given of the effects of radiation on various photonic modulator materials and devices including polymer-based structures, insulator-based devices, semiconductor-based devices and spatial light modulators. We conclude by providing recommendations for further work in the area of radiation effects in photonic modulators.!

Photonic↗
NASA NTRS1971

NASA multidisciplinary research grant

Research is discussed in the multidisciplinary areas of space and planetary science; materials and radiation; systems, instrumentation, and structures; and technology and man. Highlights are identified as an alpha-recoil track method of archeological dating; infrared astronomical telescope; reaction rates data, semiconductor radiation detectors, and analysis of time-dependent systems; Gunn effect devices for microwave generation and detection, mode-locked lasers, and radiation theory; and the application of a satellite communication system to educational development. Detectors to be flown on Apollo 16 to measure heavy particle flux in the solar wind and to be part of the HEAO-A experiment on extremely heavy nuclei in cosmic rays were developed. The impact of the multidisciplinary research on university activities is described, and individual departmental reports are included.

Source record↗
NASA NTRS1963

Component design, construction and evaluation for satellites

Components for a high-reliability system such as the Telstar project are obtained by: (a) design of the component for the required environment, (b) careful control of manufacturing processes, (c) elimination of potential early failures by screening tests, and (d) selection of the most stable components. For passive components, these methods could be applied by using design parameters, suppliers and screening techniques established in the earlier submarine cable program, with consideration being given to the additional effects of the satellite launch and orbit environments. Semiconductor component designs were selected by qualification tests using accelerated electrical and environmental stress conditions. Screening tests were applied to eliminate early failures, and resulting components were aged from two to six months before selection for the satellite. The recognition of the effect of ionizing radiation on transistors caused the addition of a radiation qualification test, or a screening to assure selection of the least sensitive devices. Tests have shown this screening to be effective for the radiation intensity expected. Experience with the passive components, and evaluation of the accelerated test results and aging data of the semiconductor devices, indicate that the reliability objective was obtained.

TELSTAR SATELLITE↗
NASA NTRS2000

Compound Semiconductor Devices for Space Applications

Application of semiconductor devices in high reliability space systems requires a thorough understanding of the reliability and failure mechanisms associated with the selected devices. This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space systems. A discussion of common failure mechanisms, radiation effects and other reliability concerns is provided along with a discussion of methods for technology qualification for high reliability space applications.

Kayali, Sammy↗
NASA NTRS2005

PDSOI and Radiation Effects: An Overview

Bulk silicon substrates are a common characteristic of nearly all commercial, Complementary Metal-Oxide-Semiconductor (CMOS), integrated circuits. These devices operate well on Earth, but are not so well received in the space environment. An alternative to bulk CMOS is the Silicon-On-Insulator (SOI), in which a &electric isolates the device layer from the substrate. SO1 behavior in the space environment has certain inherent advantages over bulk, a primary factor in its long-time appeal to space-flight IC designers. The discussion will investigate the behavior of the Partially-Depleted SO1 (PDSOI) device with respect to some of the more common space radiation effects: Total Ionized Dose (TID), Single-Event Upsets (SEUs), and Single-Event Latchup (SEL). Test and simulation results from the literature, bulk and epitaxial comparisons facilitate reinforcement of PDSOI radiation characteristics.

Forgione, Joshua B.↗