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FPGA-Based, Self-Checking, Fault-Tolerant Computers

A proposed computer architecture would exploit the capabilities of commercially available field-programmable gate arrays (FPGAs) to enable computers to detect and recover from bit errors. The main purpose of the proposed architecture is to enable fault-tolerant computing in the presence of single-event upsets (SEUs). [An SEU is a spurious bit flip (also called a soft error) caused by a single impact of ionizing radiation.] The architecture would also enable recovery from some soft errors caused by electrical transients and, to some extent, from intermittent and permanent (hard) errors caused by aging of electronic components. A typical FPGA of the current generation contains one or more complete processor cores, memories, and highspeed serial input/output (I/O) channels, making it possible to shrink a board-level processor node to a single integrated-circuit chip. Custom, highly efficient microcontrollers, general-purpose computers, custom I/O processors, and signal processors can be rapidly and efficiently implemented by use of FPGAs. Unfortunately, FPGAs are susceptible to SEUs. Prior efforts to mitigate the effects of SEUs have yielded solutions that degrade performance of the system and require support from external hardware and software. In comparison with other fault-tolerant- computing architectures (e.g., triple modular redundancy), the proposed architecture could be implemented with less circuitry and lower power demand. Moreover, the fault-tolerant computing functions would require only minimal support from circuitry outside the central processing units (CPUs) of computers, would not require any software support, and would be largely transparent to software and to other computer hardware. There would be two types of modules: a self-checking processor module and a memory system (see figure). The self-checking processor module would be implemented on a single FPGA and would be capable of detecting its own internal errors. It would contain two CPUs executing identical programs in lock step, with comparison of their outputs to detect errors. It would also contain various cache local memory circuits, communication circuits, and configurable special-purpose processors that would use self-checking checkers. (The basic principle of the self-checking checker method is to utilize logic circuitry that generates error signals whenever there is an error in either the checker or the circuit being checked.) The memory system would comprise a main memory and a hardware-controlled check-pointing system (CPS) based on a buffer memory denoted the recovery cache. The main memory would contain random-access memory (RAM) chips and FPGAs that would, in addition to everything else, implement double-error-detecting and single-error-correcting memory functions to enable recovery from single-bit errors.

Some, Raphael↗

SEU/SRAM as a Process Monitor

The SEU/SRAM is a 4-kbit Static Random Access Memory (SRAM) designed to detect Single-Event Upsets (SEUs) produced by high energy particles. This device was used to determine the distribution in the memory cell spontaneous flip potential.

distribution residual plots↗

Frequency Dependence of Single-event Upset in Advanced Commerical PowerPC Microprocessors

This paper examines single-event upsets in advanced commercial SOI microprocessors in a dynamic mode, studying SEU sensitivity of General Purpose Registers (GPRs) with clock frequency. Results are presented for SOI processors with feature sizes of 0.18 microns and two different core voltages. Single-event upset from heavy ions is measured for advanced commercial microprocessors in a dynamic mode with clock frequency up to 1GHz. Frequency and core voltage dependence of single-event upsets in registers is discussed.

single-event upset (SEU)↗

Determination Of LETs Of SRAMs By Use Of A Laser

Report describes experimental study of use of microelectronic advanced laser scanner (MEALS) to cause single-event upsets (SEUs) in integrated logic circuits. Basic concepts of SEU testing by use of MEALS described in "Laser Scanner Tests for Single-Event Upsets" (NPO-18216), "Single-Event-Upset Laser Scanner With Optical Bias" (NPO-18217), and "More About Laser Scanner Tests for Single-Event Upsets" (NPO-18494). Study part of continuing effort to study SEU effects of ionizing radiation on such circuits and to use MEALS as relatively inexpensive SEU-prescreening laboratory apparatus serving as alternative to heavy-ion acclerator.

Kim, Quiesup↗

Using Pipelined XNOR Logic to Reduce SEU Risks in State Machines

Single-event upsets (SEUs) pose great threats to avionic systems state machine control logic, which are frequently used to control sequence of events and to qualify protocols. The risks of SEUs manifest in two ways: (a) the state machine s state information is changed, causing the state machine to unexpectedly transition to another state; (b) due to the asynchronous nature of SEU, the state machine's state registers become metastable, consequently causing any combinational logic associated with the metastable registers to malfunction temporarily. Effect (a) can be mitigated with methods such as triplemodular redundancy (TMR). However, effect (b) cannot be eliminated and can degrade the effectiveness of any mitigation method of effect (a). Although there is no way to completely eliminate the risk of SEU-induced errors, the risk can be made very small by use of a combination of very fast state-machine logic and error-detection logic. Therefore, one goal of two main elements of the present method is to design the fastest state-machine logic circuitry by basing it on the fastest generic state-machine design, which is that of a one-hot state machine. The other of the two main design elements is to design fast error-detection logic circuitry and to optimize it for implementation in a field-programmable gate array (FPGA) architecture: In the resulting design, the one-hot state machine is fitted with a multiple-input XNOR gate for detection of illegal states. The XNOR gate is implemented with lookup tables and with pipelines for high speed. In this method, the task of designing all the logic must be performed manually because no currently available logic synthesis software tool can produce optimal solutions of design problems of this type. However, some assistance is provided by a script, written for this purpose in the Python language (an object-oriented interpretive computer language) to automatically generate hardware description language (HDL) code from state-transition rules.

Le, Martin↗

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

SEU from heavy-ions is measured for SOI PowerPC microprocessors. Results for 0.13 micron PowerPC with 1.1V core voltages increases over 1.3V versions. This suggests that improvement in SEU for scaled devices may be reversed. In recent years there has been interest in the possible use of unhardened commercial microprocessors in space because of their superior performance compared to hardened processors. However, unhardened devices are susceptible to upset from radiation space. More information is needed on how they respond to radiation before they can be used in space. Only a limited number of advanced microprocessors have been subjected to radiation tests, which are designed with lower clock frequencies and higher internal core voltage voltages than recent devices [1-6]. However the trend for commercial Silicon-on-insulator (SOI) microprocessors is to reduce feature size and internal core voltage and increase the clock frequency. Commercial microprocessors with the PowerPC architecture are now available that use partially depleted SOI processes with feature size of 90 nm and internal core voltage as low as 1.0 V and clock frequency in the GHz range. Previously, we reported SEU measurements for SOI commercial PowerPCs with feature size of 0.18 and 0.13 m [7, 8]. The results showed an order of magnitude reduction in saturated cross section compared to CMOS bulk counterparts. This paper examines SEUs in advanced commercial SOI microprocessors, focusing on SEU sensitivity of D-Cache and hangs with feature size and internal core voltage. Results are presented for the Motorola SOI processor with feature sizes of 0.13 microns and internal core voltages of 1.3 and 1.1 V. These results are compared with results for the Motorola SOI processors with feature size of 0.18 microns and internal core voltage of 1.6 and 1.3 V.

Irom, Farokh↗

TID, SEE and radiation induced failures in advanced flash memories

We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation-induced failures. The radiation-induced failures can be categorized as followings: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.

Scheick, Leif Z.↗

Empirical Modeling Of Single-Event Upset

Experimental study presents examples of empirical modeling of single-event upset in negatively-doped-source/drain metal-oxide-semiconductor static random-access memory cells. Data supports adoption of simplified worst-case model in which cross sectionof SEU by ion above threshold energy equals area of memory cell.

Zoutendyk, John A.↗

A Re-programmable Platform for Dynamic Burn-in Test of Xilinx Virtexll 3000 FPGA for Military and Aerospace Applications

Field Programmable Gate Arrays (FPGA) have played increasingly important roles in military and aerospace applications. Xilinx SRAM-based FPGAs have been extensively used in commercial applications. They have been used less frequently in space flight applications due to their susceptibility to single-event upsets. Reliability of these devices in space applications is a concern that has not been addressed. The objective of this project is to design a fully programmable hardware/software platform that allows (but is not limited to) comprehensive static/dynamic burn-in test of Virtex-II 3000 FPGAs, at speed test and SEU test. Conventional methods test very few discrete AC parameters (primarily switching) of a given integrated circuit. This approach will test any possible configuration of the FPGA and any associated performance parameters. It allows complete or partial re-programming of the FPGA and verification of the program by using read back followed by dynamic test. Designers have full control over which functional elements of the FPGA to stress. They can completely simulate all possible types of configurations/functions. Another benefit of this platform is that it allows collecting information on elevation of the junction temperature as a function of gate utilization, operating frequency and functionality. A software tool has been implemented to demonstrate the various features of the system. The software consists of three major parts: the parallel interface driver, main system procedure and a graphical user interface (GUI).

Field Programmable Gate Arrays (FPGA)↗

Single event upset suspectibility testing of the Xilinx Virtex II FPGA

Heavy ion testing of the Xilinx Virtex II was conducted on the configuration, block RAM and user flip flop cells to determine their static single-event upset susceptibility using LETs of 1.2 to 60 MeVcm^2/mg. A software program specifically designed to count errors in the FPGA was used to reveal L1/e, values (the LET at which the cross section is l/e times the saturation cross-section) and single-event functional-interrupt failures.

FPGA Virtex II SEU↗

An exact, closed-form expression of the integral chord-length distribution for the calculation of single-event upsets induced by cosmic rays

This paper presents a derivation of an exact closed-form expression of the integral chord-length distribution for the calculation of single-event upsets (SEUs) in an electronic memory cell, caused by cosmic rays. Results computed for two rectangular parallelepipeds using this exact expression are compared with those computed with Bradford's (1979) semiexact expression of C(x). It is found that the values of C(x) are identical for x equal or smaller than b but are vastly different for x greater than b. Moreover, while C(x) of Bradford gives reasonably accurate values of SEU rate for certain sets of computational parameters, it gives values more than 10 times larger than the correct values for other sets of parameters.

Luke, Keung L.↗

Injecting Artificial Memory Errors Into a Running Computer Program

Single-event upsets (SEUs) or bitflips are computer memory errors caused by radiation. BITFLIPS (Basic Instrumentation Tool for Fault Localized Injection of Probabilistic SEUs) is a computer program that deliberately injects SEUs into another computer program, while the latter is running, for the purpose of evaluating the fault tolerance of that program. BITFLIPS was written as a plug-in extension of the open-source Valgrind debugging and profiling software. BITFLIPS can inject SEUs into any program that can be run on the Linux operating system, without needing to modify the program s source code. Further, if access to the original program source code is available, BITFLIPS offers fine-grained control over exactly when and which areas of memory (as specified via program variables) will be subjected to SEUs. The rate of injection of SEUs is controlled by specifying either a fault probability or a fault rate based on memory size and radiation exposure time, in units of SEUs per byte per second. BITFLIPS can also log each SEU that it injects and, if program source code is available, report the magnitude of effect of the SEU on a floating-point value or other program variable.

Bornstein, Benjamin J.↗

The Galileo single-event upset solution and risk assessment

The Galileo probe will be subject to radiation fields and energetic particle bombardment during its outward bound journey and in orbit around Jupiter and its moons. To avoid the occurrence and propagation of effects of single event upset (SEU) bit state changes induced by the bombardments attempts were made to harden the Galileo electronics against SEUs. The hazards are especially acute for Schottky diode and low-power Schottky TTL parts. The preventive action options which were scheduled are reviewed, noting the selection of CMOS chips as replacements for SEU-susceptible devices. The simulation and risk assessment that were performed to evaluate the potential success of the replacements are summarized, with emphasis on the data employed to ensure the accuracy of the assessments and the predicted effects of SEUs in the various Galileo subsystems.

Burdick, Garry M.↗

Heavy-ion induced single-event upset in integrated circuits

The cosmic ray environment in space can affect the operation of Integrated Circuit (IC) devices via the phenomenon of Single Event Upset (SEU). In particular, heavy ions passing through an IC can induce sufficient integrated current (charge) to alter the state of a bistable circuit, for example a memory cell. The SEU effect is studied in great detail in both static and dynamic memory devices, as well as microprocessors fabricated from bipolar, Complementary Metal Oxide Semiconductor (CMOS) and N channel Metal Oxide Semiconductor (NMOS) technologies. Each device/process reflects its individual characteristics (minimum scale geometry/process parameters) via a unique response to the direct ionization of electron hole pairs by heavy ion tracks. A summary of these analytical and experimental SEU investigations is presented.

Zoutendyk, J. A.↗

Single-event upset in highly scaled commercial silicon-on-insulator PowerPc microprocessors

Single event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes, and core voltages. The results are compared with results for similar devices with build substrates. The cross sections of the SOI processors are lower than their bulk counterparts, but the threshold is about the same, even though the charge collections depth is more than an order of magnitude smaller in the SOI devices. The scaling of the cross section with reduction of feature size and core voltage dependence for SOI microprocessors discussed.

single event upset (SEU)↗