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At least 55 records · Page 3

Scientific results from the materials processing in space program

Scientific experiments conducted in a low-gravity environment make it possible to study effects, such as surface tension-driven flows, which are often masked by buoyancy-driven flows. A summary is provided of several early experiments which demonstrate that unwanted convective flows can be effectively suppressed in experiments conducted in orbiting spacecraft. Possible applications of low-G processing are discussed, taking into account Bridgman growth of solid solution alloy-type semiconductors, Bridgman growth of eutectic systems, and float-zone crystal growth. The control of macrosegregation and phase separation in castings is considered, giving attention also to containerless melting and solidification. A description of experiment facilities and opportunities is provided.

Naumann, R.↗

Fast, Repeatable Clumping of Solid Particles in Microgravity

A crucial step in planet formation is the growth of solid bodies in the sub-millimeter to meter size range: too large to condense directly from the gas phase and too small to interact meaningfully through mutual gravitation. The existence of planets in our solar system demands that some growth process once operated in that size regime, but the mechanism has not been positively identified. Whatever it was, it worked despite nebular turbulence that was probably strong enough to break dust structures cohering by weak surface forces and to disrupt small-scale gravitational collapse via the Goldreich-Ward mechanism. Recent work on this topic, reviewed in, has focussed on ice and frost in the laboratory, silicate dust in drop-tower and orbital microgravity environments, and numerically modelled magnetic particles.

Kive, S. G.↗

III-V semiconductor solid solution single crystal growth

The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

Gertner, E. R.↗

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗

Applications for special-purpose minerals at a lunar base

Maintaining a colony on the Moon will require the use of lunar resources to reduce the number of launches necessary to transport goods from the Earth. It may be possible to alter lunar materials to produce minerals or other materials that can be used for applications in life support systems at a lunar base. For example, mild hydrothermal alteration of lunar basaltic glasses can produce special-purpose minerals (e.g., zeolites, smectites, and tobermorites) that in turn may be used in life support, construction, waste renovation, and chemical processes. Zeolites, smectites, and tobermorites have a number of potential applications at a lunar base. Zeolites are hydrated aluminosilicates of alkali and alkaline earth cations that possess infinite, three-dimensional crystal structures. They are further characterized by an ability to hydrate and dehydrate reversibly and to exchange some of their constituent cations, both without major change of structure. Based on their unique absorption, cation exchange, molecular sieving, and catalytic properties, zeolites may be used as a solid support medium for the growth of plants, as an adsorption medium for separation of various gases (e.g., N2 from O2), as catalysts, as molecular sieves, and as a cation exchanger in sewage-effluent treatment, in radioactive waste disposal, and in pollution control. Smectites are crystalline, hydrated 2:1 layered aluminosilicates that also have the ability to exchange some of their constituent cations. Like zeolites, smectites may be used as an adsorption medium for waste renovation, as adsorption sites for important essential plant growth cations in solid support plant growth mediums (i.e., 'soils'), as cation exchangers, and in other important application. Tobermorites are cystalline, hydrated single-chained layered silicates that have cation-exchange and selectivity properties between those of smectites and most zeolites. Tobermorites may be used as a cement in building lunar base structures, as catalysts, as media for nuclear and hazardous waste disposal, as exchange media for waste-water treatment, and in other potential applications. Special-purpose minerals synthesized at a lunar base may also have important applications at a space station and for other planetary missions. New technologies will be required at a lunar base to develop life support systems that are self-sufficient, and the use of special-purpose minerals may help achieve this self-sufficiency.

Ming, Douglas W.↗

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to: (1) experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in electrically conductive melts as this applies to the bulk growth of solid solution semiconducting materials; and (2) assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit reasonable growth rates. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. TEMC has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface. In conclusion, magnetic fields up to 5 Tesla are sufficient to eliminate time-dependent convection in silicon floating zones and possibly Bridgman growth of Ge-Si alloys. In both cases, steady convection appears to be more significant for mass transport than diffusion, even at 5 Tesla in the geometries used here. These results are corroborated in both growth configurations by calculations.

Szofran, Frank R.↗

Temperature and melt solid interface control during crystal growth

Findings on the adaptive control of a transparent Bridgman crystal growth furnace are summarized. The task of the process controller is to establish a user specified axial temperature profile by controlling the temperatures in eight heating zones. The furnace controller is built around a computer. Adaptive PID (Proportional Integral Derivative) and Pole Placement control algorithms are applied. The need for adaptive controller stems from the fact that the zone dynamics changes with respect to time. The controller was tested extensively on the Lead Bromide crystal growth. Several different temperature profiles and ampoule's translational rates are tried. The feasibility of solid liquid interface quantification by image processing was determined. The interface is observed by a color video camera and the image data file is processed to determine if the interface is flat, convex or concave.

Batur, Celal↗

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to conduct the Earth-based research sufficient to successfully propose a flight experiment (1) to experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in conductive melts as this applies to the bulk growth of solid solution semiconducting materials in the reduced gravitational levels available in low Earth orbit and (2) to assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during space processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system was chosen because it has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit high growth rates compared to many other commonly studied alloy semiconductors. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. Some compositional anomalies observed by us in magnetic grown crystals can only be explained by TEMC; this has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface.

Szofran, Frank R.↗

Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field

The application of a rotating magnetic field (RMF)in the frequency range 60-400 Hz and field strength of the order of 2-8 mT to crystal growth has received increasing attention in recent years. To take full advantage of the control of fluid flow by the forces applied by the field, the liquid column must be electrically conducting. Also, the application of RMF to the directional solidification of a column of liquid can result in complete mixing in the resultant solid. Thus, the technique of RMF is suited to solvent zones and float zones where the composition of the liquid is more readily controlled. In the work we report on, numerical modeling has been applied to II-VI systems, particularly tellurium based traveling heater techniques (THM). Results for a spectrum of field strengths and acceleration levels will be presented. These show clearly the effects of competing buoyancy forces and electromagnetic stirring. Crystals of cadmium zinc telluride and mercury cadmium telluride have been grown terrestrially from a tellurium solvent zone. The effects of the RMF during these experiments will be demonstrated with micrographs showing etch pits, white beam x-ray synchrotron topographs and triple axis x-ray diffraction.

Gillies, D. C↗

Study on the mechanism of liquid phase sintering (M-12)

The objectives were to (1) obtain the data representing the growth rate of solid particles in a liquid matrix without the effect of gravity; and (2) reveal the growth behavior of solid particles during liquid phase sintering using the data obtained. Nickel and tungsten are used as the constituent materials in liquid phase sintering. The properties of the constituent metals are given. When a compact of the mixture of tungsten and nickel powders is heated and kept at 1550 C, nickel melts down but tungsten stays solid. As the density of tungsten is much greater than that of nickel, the sedimentation of tungsten particles occurs in the experiment on Earth. The difference between the experiments on Earth and in space is illustrated. The tungsten particles sink to the bottom and are brought into contact with each other. The resulting pressure at the contact point causes the accelerated dissolution of tungsten. Consequently, flat surfaces are formed at the contact sites. As a result of dissolution and reprecipitation of tungsten, the shape of particles changes to a polygon. This phenomenon is called 'flattening.' An example of flattening of tungsten particles is shown. Thus, the data obtained by the experiment on Earth may not represent the exact growth behavior of the solid particles in a liquid matrix. If the experiments were done in a microgravity environment, the data corresponding to the theoretical growth behavior of solid particles could be achieved.

Kohara, S.↗

Inefficient Growth of Refractory Grains: Implications for Grains in the Solar Nebula

Introduction: We report the results of a sounding rocket experiment in which SiO nucleation and growth in an argon atmosphere was observed in microgravity starting from a vapor generated by evaporation of waterglass deposited on a heated Ta wire. The temperature and pressure at the point of nucleation was determined using a double wavelength Mach–Zehnder-type interferometer. The particle composition and grain size distribution were measured after payload recovery using a Transmission Electron Microscope (TEM; JEM-2100F. JEOL Ltd., Tokyo). The results were analyzed using Modified Classical Nucleation Theory (MCNT)[1]. We report a measurement of the SiO-silicate grain sticking coefficient of 0.016, indicating very inefficient grain growth from the vapor. In other words, for every 100 SiO molecules that collide with a growing grain only one to two are captured. In the only two previous studies of the growth of solid particles from the gas phase the calculated sticking coefficients were much lower. For zinc atoms colliding with zinc crystals only three out of 100,000 collisions resulted in grain growth [2]. Iron atoms colliding with growing iron particles similarly showed an efficiency of ~0.00002 [3]. For zinc, we can explain inefficient growth due to the difficulty of the colliding atom coming upon a vacancy in the growing crystal lattice before it evaporates from the grain surface. The much higher sticking coefficient of SiO molecules on silica grains is reasonable because the silica grains are highly amorphous or glassy and therefore provide a much higher defect density where SiO molecules can be captured into the grains. In the case of similar Fe experiment, the critical cluster was the dimer. In this case the forming dimer returns to the vapor phase by dissociation due to the excess energy from the formation of the Fe-Fe bond.

Joseph A Nuth↗

Composting in advanced life support systems

Space missions of extended duration are currently hampered by the prohibitive costs of external resupply. To reduce the need for resupply, the National Aeronautics and Space Administration (NASA) is currently testing methods to recycle solid wastes, water, and air. Composting can be an integral part of a biologically based waste treatment/recycling system. Results indicate that leachate from composted plant wastes is not inhibitory to seed germination and contains sufficient inorganic minerals to support plant growth. Other solid wastes, for example kitchen (food) wastes and human solid wastes, can be composted with inedible plant residues to safely reduce the volume of the wastes and levels of microorganisms potentially pathogenic to humans. Finished compost could serve as a medium for plant growth or mushroom production.

NASA Center KSC↗

Plant growth chamber M design

Crop production is just one of the many processes involved in establishing long term survival of man in space. The benefits of integrating higher plants into the overall plan was recognized early by NASA through the Closed Ecological Life Support System (CELSS) program. The first step is to design, construct, and operate a sealed (gas, liquid, and solid) plant growth chamber. A 3.6 m diameter by 6.7 m high closed cylinder (previously used as a hypobaric vessel during the Mercury program) is being modified for this purpose. The chamber is mounted on legs with the central axis vertical. Entrance to the chamber is through an airlock. This chamber will be devoted entirely to higher plant experimentation. Any waste treatment, food processing or product storage studies will be carried on outside of this chamber. Its primary purpose is to provide input and output data on solids, liquids, and gases for single crop species and multiple species production using different nutrient delivery systems.

Prince, R. P.↗

Diffusive-convective physical vapor transport of PbTe from a Te-rich solid source

Crystal growth of PbTe by physical vapor transport (sublimation) in a closed ampoule is governed by the vapor species in thermal equilibrium with the solid compound. Deviations from stoichiometry in the source material cause diffusion limitation of the transport rate, which can be modified by natural (gravity-driven) convection. Mass-transport experiments have been performed using Te-rich material wherein sublimation rates have been measured in order to study the effects of natural convection in diffusion-limited vapor transport. Linear velocities for both crystal growth and evaporation (back sublimation) have been measured for transport in the direction of gravity, horizontally, and opposite to gravity. The experimental results are discussed in terms of both the one-dimensional diffusive-advective model and current, more sophisticated theory which includes natural convection. There is some evidence that convection effects from radial temperature gradients and solutal density gradients have been observed.

Zoutendyk, J.↗

Internal temperature gradient of alloy semiconductor melts from interrupted growth experiments

Interrupted growth experiments on Hg(0.8)Cd(0.2)Se alloys were performed in an attempt to estimate the actual internal temperature gradient in the melt during directional solidification. The results have been analyzed in terms of a theoretical model which assumes an axial composition profile characteristic of diffusion controlled solute redistribution during growth. A comparison of the calculated and measured values suggests a reduction in the applied (empty furnace) temperature gradient by about a factor of three. Values of the interface segregation coefficient (k) determined from the phase diagram, predict values of solute concentration build up in the solid during growth interruptions which are inconsistent with measured results. It appears that the k values used tend to underestimate the actual k values for higher alloy compositions and overestimate k for the lower alloy compositions.

Andrews, R. N.↗

Growth of Bulk Single Crystals of Dicyanovinyl-Ansiole and its Derivatives for Nonlinear Optical Applications

Bulk single crystals of a series of thermally stable nonlinear optical organic materials, Dicyanovinyl-anisole (DIVA) and their methoxy derivatives, have been successfully grown using the Bridgman-Stockbarger technique. The growth conditions are chosen to be temperature gradient of 5 to 10 C/cm and lowering rate of 0.1 to 0.3 mm/h. Single crystals of DIVA and its derivatives, of 8 x 8 x 50 cu mm in size, have been grown while maintaining a flat solid-liquid growth interface.

Gebre, T.↗