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Results for “surface planarization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Dynamic clay microstructures emerge via ion complexation waves

Clays control carbon, water and nutrient transport in the lithosphere, promote cloud formation5 and lubricate fault slip through interactions among hydrated mineral interfaces. Clay mineral properties are difficult to model because their structures are disordered, curved and dynamic. Consequently, interactions at the clay mineral-aqueous interface have been approximated using electric double layer models based on single crystals of mica and atomistic simulations. We discover that waves of complexation dipoles at dynamically curving interfaces create an emergent long-range force that drives exfoliation and restacking over time- and length-scales that are not captured in existing models. Curvature delocalizes electrostatic interactions in ways that fundamentally differ from planar surfaces, altering the ratio of ions bound to the convex and concave sides of a layer. Multiple-scattering reconstruction of low-dose energy-filtered cryo electron tomography enabled direct imaging of ion complexes and electrolyte distributions at hydrated and curved mineral interfaces with {\aa}ngstrom resolution over micron length scales. Layers exfoliate and restack abruptly and repeatedly over timescales that depend strongly on the counterion identity, demonstrating that the strong coupling between elastic, electrostatic and hydration forces in clays promote collective reorganization previously thought to be a feature only of active matter.

Whittaker, Michael L↗
DOE OSTI2021

Methods for depositing III-V compositions on silicon

The present disclosure relates to a method that includes directing a first precursor that includes a Group III element and a second precursor that includes a Group V element to a chamber containing crystalline silicon, where the crystalline silicon includes a substantially planar surface that is patterned with a plurality of v-grooves and the directing results in the forming of a III-V crystal preferentially on a (111) Si surface of the crystalline silicon.

Warren, Emily Lowell↗
DOE OSTI2023

High resolution, high conductivity components by aerosol jet printing

Highly conductive electrical traces formed over mechanical steps or on non-planar surfaces with linewidths of 10 to 100 μm and a method for forming such electrical traces are disclosed. The method employs two steps, with the first step using an aerosol jet printing (AJP) process to form thin electrical traces that serve as the seed layers for the second step. The first step preferably employs multiple passes with the AJP to create multiple seed sub-layers with improved continuity and conductivity. In the second step, the seed layers are subjected to an electrodeposition process that forms the bulk of the thickness of the electrical traces. The electrodeposition process may include one, two, or three phases at corresponding low or high biases, with low biases providing denser, more highly conductive plating sub-layers, while high biases provide plating sub-layers having better gap bridging properties.

Lavin, Judith Maria↗
DOE OSTI2021

Synthesis of a planar, multicomponent catalytic surface of Na 2 CO 3 /MnO

Here, O 2 adsorption on MnO(100) precovered with sodium (Na) multilayers was investigated by X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Deposition of Na multilayers leads to a first monolayer of oxidic Na followed by metallic Na island growth. XPS results for the oxidation of the metallic Na islands indicate an incomplete oxidation of Na at 125 K. Oxidation at 350 K completely oxidizes the metallic islands producing a mixture of Na 2 O and Na 2 O 2 . Thermal evolution of the oxidation products was examined. After oxidation at 350 K and flashing to 750 K, Na 2 O and Na 2 O 2 are the primary oxides on MnO(100). After flashing to 850 K, a solid state reaction of Na 2 O 2 /Na 2 O and the MnO(100) substrate forms a NaMnO 2 -like surface compound which decomposes above 850 K. Oxygen exchange between CO 2 and Na oxides is observed. The strong interaction between CO 2 and Na oxide islands forms Na 2 CO 3 on MnO(100). Heating the Na 2 CO 3 covered MnO(100) surface to 600 K for 10 min drives oxidic Na in the first monolayer into the MnO subsurface, and produces a surface exposing islands of Na 2 CO 3 on MnO(100).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Planarization of p -GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar {$10\bar{1}1$}-plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices.

Chemical vapor deposition↗
DOE OSTI2023

Tomographic optical emission spectroscopy of atmospheric pressure plasma interacting with complex surfaces

Plasma distribution in 3D space is heavily influenced by complex surfaces and the coupling interactions between plasma properties and interfacing material properties. For example, guided streamers that transition to surface ionization waves (SIWs) and propagate over structured dielectrics experience field enhancements that can lead to localized increases in ionization rates and complex 3D configurations that are difficult to analyze. Investigating these configurations requires techniques than can provide a more complete 3D picture. To help address this capability gap, a tomographic optical emission spectroscopy (tomo-OES) diagnostic system has been developed at Sandia National Laboratories that can resolve SIWs. The system includes four intensified cameras that measure the angular projections of the plasma light emission through bandpass filters. A dot calibration target co-registers each angular projection to the same voxel grid and an algebraic reconstruction technique (ART) recovers the light intensity at each voxel. An atmospheric pressure plasma jet (APPJ), provided by Peter Bruggeman, has been investigated and representative results are shown in Figure 1. Here, a bandpass filter was used to isolate emission from the N 2 second positive system (SPS) at 337.1 nm to capture the transition of the streamer to SIW on a planar dielectric surface (relative permittivity 3.3) located 3 mm below the APPJ [3]. The surface wave velocity was 3.5x10 4 (m/s), consistent with measurements made by Steven Shannon. Characterization of this APPJ will support the group effort of standing up a reproducible APPJ across institutions for applications such as liquid treatment, catalysis, and plasma aided combustion. Future work will investigate non-planar surfaces and eventually develop tomographic laser-induced fluorescence (tomo-LIF) approaches.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth

III-V photovoltaic devices have demonstrated exceptional performance across various applications, with controlled crystal fracturing, known as controlled spalling, emerging as a promising method to reduce costs by enabling substrate reuse. Spalling GaAs(100) substrates, a commonly used substrate in III-V photovoltaics, results in faceted ridges that must be planarized to grow high-quality photovoltaic devices. Here, in this study, we demonstrate that a GaAs(100) wafer offcut toward [$0\bar{11}$] and spalled toward [$011$] can be efficiently planarized by growing C:GaAs by metal-organic vapor phase epitaxy (MOVPE) on the surface, with up to 95% of the nominally deposited material used to fill the valleys between ridges. We find that reducing the offcut to 2° enhances the planarizing capability of C:GaAs. A surface morphology model indicates that the density of surface dangling bonds significantly influences the growth evolution of undoped GaAs surfaces. In contrast, the model suggests that the effectiveness of C:GaAs as a smoothing layer stems from modifying the atomic surface structure and, consequently, the associated sticking coefficients of the facets, which can alter the evolution of surface morphology. Our findings provide guidelines for the epitaxial planarization of semiconductor surfaces and improve the understanding of MOVPE growth on nonplanar surfaces.

14 SOLAR ENERGY↗
DOE OSTI2022

Enhancement and Saturation of Near-Field Radiative Heat Transfer in Nanogaps between Metallic Surfaces

Near-field radiative heat transfer (NFRHT) between planar metallic surfaces was computationally explored over five decades ago by Polder and van Hove [Phys. Rev. B 4, 3303 (1971)]. These studies predicted that, as the gap size (d) between the surfaces decreased, the radiative heat flux first increases by several orders of magnitude until d is ~100 nm after which the heat flux saturates. However, despite both the fundamental and practical importance of these predictions, the combined enhancement and saturation of NFRHT at small gaps in metallic surfaces remains experimentally unverified. Here, we probe NFRHT between planar metallic (Pt, Au) surfaces and show that RHT rates can exceed the far-field rate by over a thousand times when d is reduced to ~25 nm. More importantly, we show that for small values of d RHT saturates due to the dominant contributions from transverse electric evanescent modes. Finally, our results are in excellent agreement with the predictions of fluctuational electrodynamics and are expected to inform the development of technologies such as near-field thermophotovoltaics, radiative heat-assisted magnetic recording, and nanolithography.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Analysis of RF Surface Loss in a Planar 2D Qubit

The Josephson junction and shunt capacitor form a transmon qubit, which is the cornerstone of modern quantum computing platforms. For reliable quantum computing, it is important how long a qubit can remain in a superposition of quantum states, which is determined by the coherence time (T1). The coherence time of a qubit effectively sets the "lifetime" of usable quantum information, determining how long quantum computations can be performed before errors occur and information is lost. There are several sources of decoherence in transmon qubits, but the predominant one is generally considered to be dielectric losses in the natural oxide layer formed on the surface of the superconductor. In this paper, we present a numerical study of microwave surface losses in planar superconducting antennas of different transmon qubit designs. An asymptotic method for estimating the energy participation ratio in ultrathin films of nanometer scales is proposed, and estimates are given for the limits of achievable minimum RF losses depending on the electrical properties of the surface oxide and the interface of the qubit with the substrate material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth

III-V photovoltaic devices have demonstrated remarkable performance in many applications, and spalling is a promising technique for reducing device costs by recovering the substrate for reuse. In this study, we investigate the in situ planarization of A-directionally spalled GaAs(100) substrates using metal-organic vapor phase epitaxy (MOVPE) grown C:GaAs with CCl4 as the carbon source. We have characterized the (100)-oriented growth for various CCl4 flow rates and observed that the CCl4 or its by-products promote material diffusion from the facet tops to the underlying valleys. For facets with a height of 5 ..mu..m on a substrate with an A-spall and 6 degreesB -offcut, it took 7 ..mu..m of C:GaAs to planarize the substrate. For a similar sample, with a 6 degreesA -offcut, it required 2 ..mu..m of growth to fill the valleys but there were remnant facets.

III-V↗
DOE OSTI2025

Utah FORGE: Well 16B(78)-32 Drill Core Fracture Analysis Images and Data

This dataset contains drilling core data from well 16B(78)-32, including PDF documents with flattened core images annotated by feature type and core interval, as well as spreadsheets detailing feature morphologies by depth, planar feature measurements, and planar feature orientations rotated to in situ conditions. Core was recovered from three intervals, one per stimulation stage, in the crystalline rocks affected by the stimulation of well 16A(78)-32. Seven core runs were conducted, yielding 135.8 feet of recovered core. Features in the core were categorized into planar fractures, semi-planar fractures, unbroken mineralized fractures, rough fractures, curviplanar fractures, concave-convex surfaces, and planar compositional features such as mylonite or dike-like structures. Planar features were measured while the core was positioned horizontally, with the core axis aligned to a downhole azimuth of 42 degrees. Planar core measurements from stimulations 2 and 3 that could be confidently correlated with FMI data were rotated to in situ orientations. This was done by rotating the planes along vertical and horizontal axes to match the azimuth and inclination data recorded in the directional survey of well 16B(78)-32, as well as applying an axial rotation to resemble the fracture orientations observed in the FMI log at corresponding depths. Coherent sets of planar fracture measurements were made by aligning the core within each 3-foot section of the dissected core barrel, and between adjacent 3-foot sections within a core run by matching rock fabrics, saw cuts and/or tool marks. Where coherent fracture measurements could not be made within a core run, data sets are denoted by a subscript (i.e. 2-Ta and 2-Tb both come from tangent core run number 2).

15 GEOTHERMAL ENERGY↗
DOE OSTI2021

Guiding light via slippery liquid-infused porous surfaces

Slippery liquid-infused porous surfaces (SLIPSs) have been explored for many applications, taking advantage of their highly non-wetting property. In this work, we explore the SLIPS as a cladding material for waveguiding. SLIPSs are prepared by infusing perfluoropolyether oil to hydrophobized nanoporous surfaces of silicon. Power loss and transmission efficiency of an HeNe laser (1.82 mW and 632.8 nm) with varying incident angles were measured through microchannels consisting of the SLIPSs as cladding layers (noil = 1.30) and water (nwater = 1.33) as a core, compared to other cladding types including a planar silicon surface and the nanoporous surfaces in hydrophilic (Wenzel state) and hydrophobic (Cassie–Baxter state) conditions with no oil infused. Agreeing with Snell's law, a total internal reflection occurs at the incident angle as high as 14° for the SLIPSs. The waveguide loss at 14° is only 1.8 dB/cm for the SLIPSs, while those for planar silicon, hydrophilic nanoporous, and hydrophobic nanoporous surfaces are 5.9, 7.4, and 4.9 dB/cm, respectively. The power transmission efficiency of the SLIPSs is independent of the porosity because the surfaces are fully covered with the oil layer, whereas those of hydrophilic and hydrophobic nanoporous surfaces, whose pores are filled with water and air, respectively, depend on the porosity. The significantly lower power loss and the insensitivity to the surface porosity are advantages of the SLIPSs over the other surfaces and can benefit in waveguiding applications such as optofluidics.

Asawa, Kaustubh (ORCID:0000000197142555)↗
DOE OSTI2023

Effect of dielectric target properties on plasma surface ionization wave propagation

Surface ionization waves (SIWs) propagating along dielectric covered, grounded surfaces have been studied for various dielectric bulk and surface conditions; a dependence on the propagation velocity with respect to dielectric electrical thickness and near surface permittivity profiles are observed. SIWs generated by an atmospheric pressure plasma source are imaged interacting with planar dielectric surface. Surface wave velocity is obtained by tracking emission intensity as a function of time. Target dielectric thickness is varied from $d = 0.15-10$ mm and dielectric constant is varied from $\epsilon_r = 6.21 - 9.4$. The propagation of SIWs can be generally predicted by relating their velocity to the RC time constant of the circuit generated between the plasma and the dielectric surface, but it is found that this approximation breaks down for dielectric substrates of sufficient thickness and wave velocity becomes constant. The results show that wave velocity is stable and predictable for target thicknesses beyond a certain point determined by the permittivity of the target material. It is also shown that SIW propagation is strongly driven by the dielectric material near to the surface of the target in addition to the bulk material. The possible mechanisms driving these thickness dependent behaviors is discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Molecular Structure of Adsorbed Water Phases in Silica Nanopores

The adsorption of water vapor in silica nanopores with different pore morphologies and surface hydrophilicities was studied to quantify the densities and thicknesses of the water sorption layers and deduce their molecular structures. Water adsorption to surface hydroxyls is described by a multilayer sorption model. At low pressure, the water adsorption isotherms are largely independent of pore size and the adsorbed amounts scale with the surface hydroxyl density. Adsorbed-phase densities corresponding to the adsorption of two water molecules per surface hydroxyl group are found in the first adsorbed water layer for a wide range of surface hydroxyl densities. The densities and layer thickness values found in narrow pores indicate that patchy adsorbed layers form if not enough water molecules exist for a full layer, which coexist with dry pore surface regions. This behavior indicates cooperative adsorption effects, i.e., a preference for the formation of hydrogen bonds between water molecules bound to surface hydroxyls. In narrow pores, pore condensation limits further growth of the sorption layer, and in larger pores and at the planar quartz surface, a second adsorbed water layer is formed, which can hold up to approximately 4 additional water molecules per surface hydroxyl group. The water molecules in these thicker adsorption layers arrange such that the sorption layer density is similar to the bulk water density. Pore confinement limitations on the sorption layers are observed in pores with radii of as large as 8 nm. Molecular dynamics modeling reveals two preferential orientations for water molecules adsorbing to surface hydroxyl groups and suggests an intralayer structuring in the adsorbed monolayer. Furthermore, adsorbed water molecules in the sorption layer are bonded to the surface hydroxyl group via the donation and acceptance of hydrogen bonds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Secondary electron emission for reticulated carbon foam surfaces using direct measurements and spectroscopic analysis

This study investigates secondary electron emission (SEE) characteristics of reticulated foams using direct measurements and analytical modeling. Total SEE was quantified, revealing suppression of up to 44% in carbon foam structures compared to planar graphite surfaces. An optimal geometric configuration was identified and supported by analytical models. SEE angular dependence experiments showed diverse behaviors: fiber-like behavior and directional dependence for pore and ligaments on the mm scale, with fuzz-like characteristics when the foam features are between 10–100 µm. Electron energy analyzer measurements showed that carbon foams preferentially suppress inelastic backscattered electrons (BSEs) more so than true secondary electrons (SEs). The analysis indicated a larger fraction of low-energy SE generation in foams compared to flat surfaces due to increased emission from curved fiber ligaments and tertiary SEs from high-energy BSEs. These findings have implications for design and optimization of materials with tailored electron emission properties for applications like plasma-facing components, spacecraft materials, and accelerator surfaces.

Auger↗
DOE OSTI2025

Modeling Framework to Predict Melting Dynamics at Microstructural Defects in TNT-HMX High Explosive Composites

Many high explosive (HE) formulations are composite materials whose microstructure is understood to impact functional characteristics. Interfaces are known to mediate the formation of hot spots that control their safety and initiation. Here, to study such processes at molecular scales, we developed all-atom force fields (FFs) for Octol, a prototypical HE formulation comprised of TNT (2,4,6-trinitrotoluene) and HMX (octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine). We extended a FF for TNT and recasted it in a form that can be readily combined with a well-established FF for HMX. The resulting FF was extensively validated against experimental results and density functional theory calculations. We applied the new combined TNT-HMX FF to predict and rank surface and interface energies, which indicate that there is an energetic driver for coarsening of microstructural grains in TNT-HMX composites. Finally, we assess the impact of several microstructural environments on the dynamic melting of TNT crystal under ultrafast thermal loading. We find that both free surfaces and planar material interfaces are effective nucleation points for TNT melting. However, MD simulations show that TNT crystal is prone to superheating by at least 50 K on subnanosecond time scales and that the degree of superheating is inversely correlated with surface and interface energy. The modeling framework presented here will enable future studies on hot spot formation processes in accident scenarios that are governed by strong coupling between microstructural interfaces, material mechanics, momentum and energy transport, phase transitions, and chemistry.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Planar tunneling spectroscopy on van der Waals superconductors with AlO x junction grown by atomic layer deposition

Here, we demonstrate a method for fabricating a high-quality AlO x -based planar tunnel junction using atomic layer deposition, integrated with the exfoliation and transfer techniques for van der Waals (vdW) materials. The tunneling spectroscopy results on exfoliated Bi 2 Sr 2 CaCu 2 O 8+δ and 2H-NbSe 2 vdW superconductors are highly consistent with that obtained by ultrahigh vacuum scanning tunneling spectroscopy on atomically clean surfaces. The planar tunneling devices enable high-precision spectroscopy over a wide range of temperatures and magnetic fields and reveal novel features and stark contrast between high-T C cuprates and conventional superconductors. This method represents a universally applicable technique for probing the electronic structure of various two-dimensional vdW materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗