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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Development of a high efficiency thin silicon solar cell

Significant improvements in open-circuit voltage and conversion efficiency, even on relatively high bulk resistivity silicon, were achieved by using a screen-printed aluminum paste back surface field. A 4 sq cm 50 micron m thick cell was fabricated from textured 10 omega-cm silicon which had an open-circuit voltage of 595 mV and AMO conversion efficiency at 25 C of 14.3%. The best 4 sq cm 50 micron thick cell (2 omega-cm silicon) produced had an open-circuit voltage of 607 mV and an AMO conversion efficiency of 15%. Processing modifications are described which resulted in better front contact integrity and reduced breakage. These modifications were utilized in the thin cell pilot line to fabricate 4 sq cm cells with an average AMO conversion efficiency at 25 C of better than 12.5% and with lot yields as great as 51% of starts; a production rate of 10,000 cells per month was demonstrated. A pilot line was operated which produced large area (25 cm) ultra-thin cells with an average AMO conversion efficiency at 25 deg of better than 11.5% and a lot yield as high as 17%.

Storti, G.↗
NASA NTRS1978

Thin silicon solar cell performance characteristics

Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.

Gay, C. F.↗
NASA NTRS1979

Solar cell module

An improved solar cell module for use in terrestrial environments is disclosed. It is characterized by: (1) an internally reflective plate having a planar surface of incidence and an opposed textured surface (2) a plurality of uniformly spaced silicon solar cells having the active surfaces thereof bonded to portions of the textured surface, and (3) a layer of diffusely reflective matter applied to the textured surface in surrounding relation with the solar cells for reflecting solar energy. The solar energy then strikes the surface of incidence at such angles as to be internally re-reflected and caused to progress toward the active surfaces of the solar cells, whereby concentration of incident flux on the solar cell is achieved without increased module depth.

Shepard, N. F., Jr.↗
NASA NTRS1979

Mechanical and chemical effects of ion-texturing biomedical polymers

To determine whether sputter etching may provide substantial polymer surface texturing with insignificant changes in chemical and mechanical properties, an 8 cm beam diameter, electron bombardment, argon ion source was used to sputter etch (ion-texture process) nine biomedical polymers. The materials included silicone rubber, 32% carbon impregnated polyolefin, polyoxymethylene, polytetrafluoroethylene, ultrahigh molecular weight (UHMW) polyethylene, UHMW polyethylene with carbon fibers (10%), and several polyurethanes (bioelectric, segmented, and cross linked). Ion textured microtensile specimens of each material except UHMW polyethylene and UHMW polyethylene with 10% carbon fibers were used to determine the effect of ion texturing on tensile properties. Scanning electron microscopy was used to determine surface morphology changes, and electron spectroscopy for chemical analysis was used to analyze the near surface chemical changes that result from ion texturing. Ion energies of 500 eV with beam current densities ranging from 0.08 to 0.19 mA/sq cm were used to ion texture the various materials. Standard microtensile specimens of seven polymers were exposed to a saline environment for 24 hours prior to and during the tensile testing. The surface chemical changes resulting from sputter etching are minimal in spite of the often significant changes in the surface morphology.

Weigand, A. J.↗
NASA NTRS1979

Development of an Improved High Efficiency Thin Silicon Solar Cell

Breakage and front contact failure in high efficiency, textured ultrathin cells was reduced as a consequence of the introduction of process modifications. In a small production run, over one hundred ultrathin cells, having an average AMO efficiency of 13%, were fabricated from 10-25 ohm cm silicon. An in-house aluminum paste for back surface field formation was developed that resulted in cell efficiencies equivalent to those from commercial pastes. The quality of the back surface field was found to be dependent on the orientation of the silicon slice during alloying.

Storti, G.↗
NASA NTRS1984

The NASA photovoltaic technology program

The NASA Office of Aeronautical and Space Technology OAST Program in space photovoltaics is reviewed. From the perspective of national landmark mission requirements and five year and 25-year long range plans, the texture of the program is revealed. Planar silicon and concentrator GaAs array technology advances are discussed. Advances in lightweight (50 micro cell) arrays and radiation tolerance research are presented. Recent progress in cascade cells and ultralightweight GaAs planar cells is noted. Progress in raising silicon cell voltage to its theoretical maximum is detailed. Advanced concepts such as plasmon converters and the Long Duration Exposure Facility LDEF flight experiments pertaining to solar cell and array technology are also shown.

Mullin, J. P.↗
NASA NTRS1985

High Lifetime Solar Cell Processing and Design

In order to maximize efficiency a solar cell must: (1) absorb as much light as possible in electron-hole production, (2) transport as large a fraction as possible of the electrons to the n-type terminal and holes to the p-type terminal without their first recombining, and (3) produce as high as possible terminal voltage. Step (1) is largely fixed by the spectrum of sunlight and the fundamental absorption characteristics of silicon, although some improvements are possible through texturizing induced light trapping and back surface reflectors. Steps (2) and (3) are, however, dependent on the recombination mechanisms of the cell. The recombination, on the contrary, is strongly influenced by cell processing and design. Some of the lessons during the development of point-contact-cell are discussed. Cell dependence on recombination, surface recombination, and contact recombination are discussed. Results show the overwhelming influence of contact recombination on the operation of the cell when the other sources of recombination are reduced by careful processing.

Swanson, R. M.↗
NASA NTRS1984

The NASA photovoltaic technology program

The NASA Office of Aeronautical and Space Technology OAST Program in space photovoltaics is reviewed. From the perspective of national landmark mission requirements and five year and 25-year long range plans, the texture of the program is revealed. Planar silicon and concentrator GaAs array technology advances are discussed. Advances in lightweight (50 micro cell) arrays and radiation tolerance research are presented. Recent progress in cascade cells and ultralightweight GaAs planar cells is noted. Progress in raising silicon cell voltage to its theoretical maximum is detailed. Advanced concepts such as plasmon converters and the Long Duration Exposure Facility LDEF flight experiments pertaining to solar cell and array technology are also shown.

Mullin, J. P.↗
DOE OSTI2023

Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application

Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm 2 and 0.5 mA/cm 2 due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J 0 ), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J 0 to ~100 mA/cm 2 .

14 SOLAR ENERGY↗
DOE OSTI2025

Nanopinhole-Enabled, Hole-Selective Poly-Si/SioxNy Passivating Contacts on Textured c-Si for Si Solar Cells

The next-generation silicon photovoltaics will be based on passivating electron- and hole-selective contacts with both very low interface recombination and contact resistivities. While the emerging mainstream TOPCon technology has developed excellent electron-selective poly-Si/tunneling SiOx contacts, hole-selective contacts, especially on textured surfaces, have remained a significant challenge. This contribution introduces novel high-performance hole selective poly-Si contacts on pyramid-textured Si, enabled by electrochemically produced hole transport nanopinholes in a 10 nm oxynitride passivating dielectric stack capped by p+ poly-Si. The highly passivating oxynitride layer is produced via atomic intermixing of O and N atoms in the initial SiOx/SiNy layer stack upon thermal annealing. Carrier transport is governed by nanopinhole density and size are tuned by Ag nanoparticle electrodeposition and surface attachment chemistries. This results in passivating hole contact resistivities in the m..omega..-cm2 range, while preserving interface recombination current prefactor around 5 fA/cm2.

14 SOLAR ENERGY↗
NASA NTRS2011

Cryo-Etched Black Silicon for Use as Optical Black

Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

Yee, Karl Y.↗
NASA NTRS1979

Process Development for Automated Solar Cell and Module Production. Task 4: Automated Array Assembly

A baseline sequence for the manufacture of solar cell modules was specified. Starting with silicon wafers, the process goes through damage etching, texture etching, junction formation, plasma edge etch, aluminum back surface field formation, and screen printed metallization to produce finished solar cells. The cells were then series connected on a ribbon and bonded into a finished glass tedlar module. A number of steps required additional developmental effort to verify technical and economic feasibility. These steps include texture etching, plasma edge etch, aluminum back surface field formation, array layup and interconnect, and module edge sealing and framing.

Source record↗
DOE OSTI2022

Anisotropic temperature-dependent elastic constants and thermal conductivities of TRISO particle coatings

Tristructural isotropic (TRISO) particles show great promise as a candidate fuel for use in several next-generation high-temperature nuclear reactor designs due to their structural integrity and fuel performance at high temperatures and burnups. Computational codes exist that can simulate TRISO fuel performance characteristics and failure probabilities under extreme conditions which require knowledge of the TRISO coatings’ thermophysical properties. The thermophysical descriptions of the TRISO particle's layers (i.e., buffer, pyrolytic carbon, and silicon carbide) currently used in fuel performance codes, however, assume that many of these properties are constant with respect to temperature or texture. In this paper, we obtain the full elastic stiffness tensors of the carbon and silicon carbide layers, which have transversely isotropic symmetry. Additionally, the calculated elastic properties of each of the coating layers are in remarkable agreement with the current models at room temperature and correct orientations. Additionally, the textured 3C-SiC layer was found to exhibit novel auxetic behavior above 1500 °C. The anisotropic temperature-dependent thermal conductivities of the carbon layers were calculated using acoustical Grüneisen-Debye theory which are in excellent agreement with current models at room temperature and correct orientations. These texture- and temperature-dependent relationships can be incorporated into the thermophysical description of TRISO particles in order to more accurately model fuel performance and failure probabilities under extreme conditions in forthcoming high-fidelity computational simulations.

36 MATERIALS SCIENCE↗
NASA NTRS1978

The Automated Array Assembly Task of the Low-cost Silicon Solar Array Project, Phase 2

An advanced process sequence for manufacturing high efficiency solar cells and modules in a cost-effective manner is discussed. Emphasis is on process simplicity and minimizing consumed materials. The process sequence incorporates texture etching, plasma processes for damage removal and patterning, ion implantation, low pressure silicon nitride deposition, and plated metal. A reliable module design is presented. Specific process step developments are given. A detailed cost analysis was performed to indicate future areas of fruitful cost reduction effort. Recommendations for advanced investigations are included.

Coleman, M. G.↗
NASA NTRS1978

Development of an improved high efficiency thin silicon solar cell

Efforts were concerned with optimizing techniques for thinning silicon slices in NaOH etches, initial investigations of surface texturing, variation of furnace treatments to improve cell efficiency, initial efforts on optimization of gridline and cell sizes and Pilot Line fabrication of quantities of 2 cm x 2 cm 50 micron thick cells.

Lindmayer, J.↗
NASA NTRS1978

A high volume cost efficient production macrostructuring process

The paper presents an experimentally developed surface macro-structuring process suitable for high volume production of silicon solar cells. The process lends itself easily to automation for high throughput to meet low-cost solar array goals. The tetrahedron structure observed is 0.5 - 12 micron high. The surface has minimal pitting with virtually no or very few undeveloped areas across the surface. This process has been developed for (100) oriented as cut silicon. Chemi-etched, hydrophobic and lapped surfaces were successfully texturized. A cost analysis as per Samics is presented.

Chitre, S. R.↗
NASA NTRS1975

V-grooved silicon solar cells

Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces were made by preferential etching techniques. Various conditions for potassium hydroxide and hydrazine hydrate etching were investigated. Optical reflection losses from these surface were reduced. The reduced reflection occurred at all wavelengths and resulted in improved short circuit current and spectral response. Improved collection efficiency is also expected from this structure due to generation of carriers closer to the cell junction. Microscopic point measurements of collected current using a scanning electron microscope showed that current collected at the peaks of the texturized surface were only 80 percent of those collected in the valleys.

Baraona, C. R.↗