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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

A review of Sb 2 Se 3 photovoltaic absorber materials and thin-film solar cells

Energy generated from environmentally friendly, cost-effective solar cells is a key aspect for developing a clean renewable-energy economy. Non-toxic and Earth-abundant materials with high absorption coefficient (>10 5 cm -1 ) and optimal bandgap (1-1.5 eV) have received great attention as photovoltaic (PV) absorber layers during the last few decades. Among them, antimony selenide (Sb 2 Se 3 ) has been a promising PV absorber, with steadily increasing power-conversion efficiency (PCE) compared to other emerging compounds. Very recent studies showed that high-quality ZnO:Al/ZnO/CdS/TiO 2 /Sb 2 Se 3 /MoSe 2 /Mo devices with PCE of 9.2% can be fabricated using cost-effective novel compounds. Considering these recent advances, this article provides an overview of the material properties of Sb2Se3 thin films and the recent progress made with Sb 2 Se 3 -based solar cells. Furthermore, analysis of Sb 2 Se 3 -based thin-film solar cells has also shown that the devices have relatively good light management due to their suitable bandgap and high absorption coefficient, whereas carrier management, i.e. collection efficiency of photo-generated carriers, needs significant improvement. Overall, this study provides background knowledge on material properties and device performance and suggests main research directions to overcome the limiting factors of solar cell performance.

14 SOLAR ENERGY↗
DOE OSTI2023

Tuning microwave losses in superconducting resonators

Abstract The performance of superconducting resonators, particularly cavities for particle accelerators and micro cavities and thin film resonators for quantum computations and photon detectors, has been improved substantially by recent material treatments and technological advances. As a result, the niobium cavities have reached the quality factors Q ∼ 10 11 at 1–2 GHz and 1.5 K and the breakdown radio-frequency (rf) fields H close to the dc superheating field of the Meissner state. These advances raise the questions of whether the state-of-the-art cavities are close to the fundamental limits, what these limits actually are, and to what extent the Q and H limits can be pushed by the materials nano structuring and impurity management. These issues are also relevant for many applications using high-Q thin film resonators, including single-photon detectors and quantum circuits. This topical review outlines basic physical mechanisms of the rf nonlinear surface impedance controlled by quasiparticles, dielectric losses and trapped vortices, as well as the dynamic field limit of the Meissner state. Sections cover methods of engineering an optimum quasiparticle density of states and superfluid density to reduce rf losses and kinetic inductance by pairbreaking mechanisms related to magnetic impurities, rf currents, and proximity-coupled metallic layers at the surface. A section focuses on mechanisms of residual surface resistance, which dominates rf losses at ultra low temperatures. Microwave losses of trapped vortices and their reduction by optimizing the concentration of impurities and pinning potential are also discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Flux trapping in NbTiN strips

We use scanning superconducting quantum interference device (SQUID) microscopy to image vortices in superconducting structures fabricated from NbTiN thin films. We repeatedly cool superconducting strips with different width in an applied magnetic field and image the individual vortices. From these images we determine the threshold field at which the first vortex enters a strip and the number and configuration of vortices beyond this threshold field. We model the behavior of the vortices with and without considering the effect of pinning using numerical methods to minimize the Gibbs free energy of vortices in the strips. Our measurements provide a first benchmark to investigate the flux trapping properties of NbTiN thin films directly relevant to NbTiN-based superconducting digital circuits.

Bai, Ruiheng [Cornell University] (ORCID:000000025↗
DOE OSTI2023

Autonomous alignment and healing in multilayer soft electronics using immiscible dynamic polymers

Self-healing soft electronic and robotic devices can, like human skin, recover autonomously from damage. While current devices use a single type of dynamic polymer for all functional layers to ensure strong interlayer adhesion, this approach requires manual layer alignment. In this study, we used two dynamic polymers, which have immiscible backbones but identical dynamic bonds, to maintain interlayer adhesion while enabling autonomous realignment during healing. These dynamic polymers exhibit a weakly interpenetrating and adhesive interface, whose width is tunable. When multilayered polymer films are misaligned after damage, these structures autonomously realign during healing to minimize interfacial free energy. Finally, we fabricated devices with conductive, dielectric, and magnetic particles that functionally heal after damage, enabling thin-film pressure sensors, magnetically assembled soft robots, and underwater circuit assembly.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics

Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide (Ti⁢O 2 ) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at subkelvin temperatures with photon echo techniques. Furthermore, we suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 μ⁢s (a 5-kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art Er nanophotonic devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:Ti⁢O 2 on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.

Electro-optic effects↗
DOE OSTI2020

Perovskite Quantum Dot Solar Cells: Mapping Interfacial Energetics for Improving Charge Separation

Colloidal halide perovskite nanocrystals or quantum dots (QDs) show similar defect tolerance as thin film perovskite materials with added nanoscale phenomena. Perovskite QD solar cells have demonstrated efficiencies of 16.6%, greater than that of any other QD material system. While the efficiency lags behind the best thin-film perovskite devices, these solar cells could have advantages over the thin-film versions in terms of processability, phase stability, and high open-circuit voltages. However, some operating principles behind perovskite quantum dot device stacks and the associated electric field properties are still unknown. Here, we characterize the junction structure within perovskite QD solar cells, by exposing functioning cross-sections and using nanometer-scale Kelvin probe force microscopy to offer insight into the selection and performance of charge selective contacts. We also evaluated various solar cell device architectures with different selective contacts to isolate the role of each junction in device performance. We show that in high-performance n-i-p architectures, both electron- and hole-transport layer (HTL) interfaces possess a strong electric field, but in the case of the inverted p-i-n architecture, we find that high interfacial recombination at the HTL/QD junction is responsible for subpar device performance. Perovskite QD and thin film materials can synergistically be combined to offer more design flexibility in PV devices, and here we demonstrate that the interface between perovskite thin films and QDs are relatively benign and amenable for synergistic device design.

14 SOLAR ENERGY↗
DOE OSTI2025

Low-loss superconducting resonators fabricated from tantalum films grown at room temperature

The use of α-tantalum in superconducting circuits has enabled a considerable improvement in the coherence time of transmon qubits. The standard approach to grow α-tantalum thin films on silicon involves heating the substrate, which takes several hours per deposition and prevents the integration of this material with wafers containing temperature-sensitive components. We report a detailed experimental study of an alternative growth method of α-tantalum on silicon, which is achieved at room temperature through the use of a niobium seed layer. Despite a substantially higher density of oxygen-rich grain boundaries in the films sputtered at room temperature, resonators made from these films are found to have state-of-the-art quality factors, comparable to resonators fabricated from tantalum grown at high temperature. This finding challenges previous assumptions about correlations between material properties and microwave loss of superconducting thin films, and opens a new avenue for the integration of tantalum into fabrication flows with limited thermal budget.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Toward 1% single-photon anharmonicity with periodically poled lithium niobate microring resonators

The absence of the single-photon nonlinearity has been a major roadblock in developing quantum photonic circuits at optical frequencies. In this paper, we demonstrate a periodically poled thin film lithium niobate microring resonator (PPLNMR) that reaches 5,000,000%/W second-harmonic conversion efficiency—almost 20-fold enhancement over the state-of-the-art—by accessing its largest χ <#comment/> ( 2 ) tensor component d 33 via quasi-phase matching. The corresponding single-photon coupling rate g / 2 π <#comment/> is estimated to be 1.2 MHz, which is an important milestone as it approaches the dissipation rate κ <#comment/> / 2 π <#comment/> of best-available lithium niobate microresonators developed in the community. Using a figure of merit defined as g / κ <#comment/> , our device reaches a single-photon nonlinear anharmonicity approaching 1%. We show that, by further scaling of the device, it is possible to improve the single-photon anharmonicity to a regime where photon blockade effect can be manifested.

Lu, Juanjuan (ORCID:0000000319389119)↗
DOE OSTI2021

In 2 O 3 -Ga 2 O 3 Alloys as Potential Buffer Layers in CdTe Thin-Film Solar Cells

The efficiency of state-of-the-art Cd Te solar cells remains limited by the relatively low open-circuit voltage (V OC ). Improving the front interface is key towards realizing a higher V OC after achieving the necessary bulk carrier density and lifetime. Recent efforts in identifying buffer layers beyond Cd S have focused on Mg x Zn 1-x O, which offers tunability of the band offsets, but often suffers from high interfacial defect densities. Ga 2 O 3 -based buffer layers demonstrate tremendous improvements in interfacial defect passivation in crystalline silicon and dye-sensitized solar cells, leading to record high V OC , yet remain largely unexplored in Cd Te-based devices. Here, we perform hybrid density-functional-theory calculations to investigate pure Ga 2 O 3 and InGaO 3 alloys as a window layer in Cd Te photovoltaics. We report calculated band offsets for several pairs of solid-solid interfaces comprising transparent conducting oxide (TCO) and Cd Te heterojunctions. The results support a large conduction band offset spike of 0.67 eV for the Cd Te/Ga 2 O 3 (100) interface, while the offset is reduced to 0.18 eV for the InGaO 3 alloy and matches closely with the preferred optimum value of 0.2 eV. Device-level modeling tests of Cd Te solar cells integrating our results indicate that the highest efficiency is achieved with InGaO 3 acting both as a buffer layer and TCO. Finally, our results suggest that alloys of In 2 O 3 and Ga 2 O 3 may be attractive alternatives to Mg x Zn 1-x O for tailoring optimal conduction-band offsets of the buffer and TCO layers in high-efficiency Cd Te thin-film solar cells.

14 SOLAR ENERGY↗
DOE OSTI2021

Revealing Micro-Scale Doping Variations in Thin-Films via Simultaneous Luminescence and Current Collection Measurements

Doping thin films used for photovoltaic absorbers is both critical to maximize device voltage and challenging due to complex interactions between point defects in these materials. Such interactions can result in compensation of the intended dopant species, meaning that the active charge-carrier concentration is lower than the concentration incorporated dopants. Charge-carrier compensation is directly related to the open-circuit voltage (VOC) deficit, or magnitude of VOC relative to the theoretical limit. Understanding how the carrier concentration varies within thin-films is necessary to design material processing schedules to minimize this VOC deficit and produce more efficient devices. Unfortunately, measurements of the free carrier concentration are generally relevant at the device level and cannot resolve local differences. Resolving local doping differences in thin-films such as Cd(Se,Te), CZTS, and CIGSe requires techniques with micron or sub-micron spatial resolution due to the polycrystalline structure as well as intended and unintended composition variations in these materials. In this contribution, we show how simultaneous measurement of cathodoluminescence (CL) and electron-beam-induced current (EBIC) can be used to expose doping variations in Cd(Se,Te) thin-films. Simultaneous collection of these signals reveals unexpected differences in the electric field strength through the device thickness due to spatial variation in the carrier concentration.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2023

Novel n-type Device Architectures to Achieve 1 Volt V OC in Thin Film CdTe cells

The main goal of this project was to develop a novel thin film CdTe solar cell architecture based on an n-type absorber, which can overcome performance limitations associated with the typical p-Cd(Se)Te state-of-the-art architecture. Even today, the performance of the Cd(Se)Te cell continues to be limited by its open- circuit voltage, which is directly related to the net doping of the absorber. (currently @ approx. 900 mV for CdTe/CST device configuration). The proposed polycrystalline thin- film solar cell architecture was based on n-type CdTe (and CdSeTe) absorbers to overcome this limitation, since n-type CdTe absorbers offer advantages over p-type: (i) n-type dopability in CdTe is higher (than p), enabling higher doping and therefore higher V OC (ii) using a wide bandgap material as the p-contact, the n-CdTe cell can become a “bi-facial” cell, with the potential to increase energy yield up to 25% depending on environmental and mounting conditions.

14 SOLAR ENERGY↗
DOE OSTI2021

Bulk and Short-Circuit Anion Diffusion in Epitaxial Fe 2 O 3 Films Quantified Using Buried Isotopic Tracer Layers

Self-diffusion is a fundamental physical process that, in solid materials, is intimately correlated with both microstructure and functional properties. In this work, a universal approach is presented to precisely characterize self-diffusion in ionic solids by isotopically enriching anions and/or cations at specific locations within an epitaxial film stack, and characterize their redistribution at high spatial resolution with atom probe tomography. Nanoscale anion diffusivity is quantified in epitaxial α-Fe 2 O 3 thin films deposited by molecular beam epitaxy with a thin (10 nm) buried layer highly enriched in 18 O. The isotopic sensitivity of the atom probe allows precise measurement of 18 O distribution across the sharp interfaces between this layer and the surrounding Fe 2 O 3 after annealing. Short-circuit anion diffusion through 1D and 2D structural defects in Fe 2 O 3 are also directly visualized in 3D. This versatile approach to study precisely tailored thin film samples at high spatial and mass fidelity will facilitate a deeper understanding of atomic-scale diffusion phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Distinguishing bulk and surface recombination in CdTe thin films and solar cells using time-resolved terahertz and photoluminescence spectroscopies

Understanding the nature of recombination and its dependence on defects and interfaces is essential for engineering materials and contacts for higher open circuit voltage (V oc ) and power conversion efficiency in photovoltaic (PV) devices. Time-resolved photoluminescence (TRPL) has conventionally been used to evaluate recombination, but carrier redistribution often dominates the response at short times. In this work, we report on the quantification of carrier dynamics and recombination mechanisms by complementary use of both time-resolved terahertz spectroscopy (TRTS) and TRPL combined with numerical modeling of the continuity equations and Poisson’s equation. We have demonstrated this approach using CdTe thin films. A thin film stack with CdTe fabricated by vapor transport deposition and treated with CdCl 2 exhibited a bulk lifetime of 1.7 ± 0.1 ns, negligible CdTe/CdS interface recombination velocity, and back surface recombination velocity of 6.3 ± 1.3 x10 4 cm/s. In contrast, a film stack without CdCl 2 treatment had a bulk lifetime of only 68 ± 12 ps and a higher interface recombination velocity of 4 ± 2 x10 8 cm/s. By determining the locus and mechanisms of performance-limiting recombination, we can accelerate the development of thin-film PVs with higher V oc and efficiency. While the method has been demonstrated here using CdTe, it is also applicable to perovskites, Cu(InGa)Se 2 , Cu2ZnSn(S,Se) 4, and emerging technologies.

14 SOLAR ENERGY↗
DOE OSTI2023

Photothermally Activated Artificial Neuromorphic Synapses

Biological nervous systems rely on the coordination of billions of neurons with complex, dynamic connectivity to enable the ability to process information and form memories. In turn, artificial intelligence and neuromorphic computing platforms have sought to mimic biological cognition through software-based neural networks and hardware demonstrations utilizing memristive circuitry with fixed dynamics. Here, to incorporate the advantages of tunable dynamic software implementations of neural networks into hardware, we develop a proof-of-concept artificial synapse with adaptable resistivity. This synapse leverages the photothermally induced local phase transition of VO 2 thin films by temporally modulated laser pulses. Such a process quickly modifies the conductivity of the film site-selectively by a factor of 500 to “activate” these neurons and store “memory” by applying varying bias voltages to induce self-sustained Joule heating between electrodes after activation with a laser. These synapses are demonstrated to undergo a complete heating and cooling cycle in less than 120 ns.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Self-aligned heterogeneous quantum photonic integration

Integrated quantum photonics holds significant promise for scalable photonic quantum information processing, quantum repeaters, and quantum networks, but its development is hindered by the mismatch between materials hosting high-quality quantum emitters and those compatible with mature photonic technologies. Heterogeneous integration offers a potential solution to this challenge, yet practical implementations have been limited by inevitable insertion losses at material interfaces. Here, we present a self-aligned heterogeneous quantum photonic integration approach that enables near-unity coupling efficiency at the interface. To showcase our approach, we demonstrate Purcell enhancement of a silicon vacancy (SiV) center in diamond induced by a heterogeneous photonic crystal cavity defined by titanium dioxide (TiO 2 ), as well as optical spin control and readout via a TiO 2 photonic circuit. We further show that, when combined with inverse photonic design, our approach enables efficient and broadband collection of single photons from a color center into a heterogeneous waveguide. Our approach is not restricted to SiV centers or TiO 2 ; it has the potential to be broadly applied to integrate diverse solid-state quantum emitters with thin-film photonic devices where conformal deposition is possible. Together, these results establish a practical route to scalable quantum photonic integrated circuits that combine high-quality quantum emitters with technologically mature photonic platforms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

This work describes the complete fabrication process of thin-absorber cadmium selenium telluride/cadmium telluride photovoltaic devices for enhanced efficiency. Here, the process utilizes an automated in-line vacuum system for close-space sublimation deposition which is scalable from fabrication of small area research devices to large-scale modules.

14 SOLAR ENERGY↗
DOE OSTI2021

Advances in coherent coupling between magnons and acoustic phonons

The interaction between magnetic and acoustic excitations have recently inspired many interdisciplinary studies ranging from fundamental physics to circuit implementation. Specifically, the exploration of their coherent interconversion enabled via the magnetoelastic coupling opens a new playground combining straintronics and spintronics, and provides a unique platform for building up on-chip coherent information processing networks with miniaturized magnonic and acoustic devices. In this Perspective, we will focus on the recent progress of magnon-phonon coupled dynamic systems, including materials, circuits, imaging and new physics. In particular, we highlight the unique features such as nonreciprocal acoustic wave propagation and strong coupling between magnons and phonons in magnetic thin-film systems, which provides a unique platform for their coherent manipulation and transduction. We will also review the frontier of surface acoustic wave resonators in coherent quantum transduction and discuss how the novel acoustic circuit design can be applied in microwave spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Tutorial on forming through-silicon vias

Through-silicon vias (TSVs) are a critical technology for three-dimensional integrated circuit technology. These through-substrate interconnects allow electronic devices to be stacked vertically for a broad range of applications and performance improvements such as increased bandwidth, reduced signal delay, improved power management, and smaller form-factors. There are many interdependent processing steps involved in the successful integration of TSVs. This article provides a tutorial style review of the following semiconductor fabrication process steps that are commonly used in forming TSVs: deep etching of silicon to form the via, thin film deposition to provide insulation, barrier, and seed layers, electroplating of copper for the conductive metal, and wafer thinning to reveal the TSVs. Recent work in copper electrochemical deposition is highlighted, analyzing the effect of accelerator and suppressor additives in the electrolyte to enable void-free bottom-up filling from a conformally lined seed metal.

42 ENGINEERING↗