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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗
NASA NTRS1990

Solid-state reprogrammable analog resistive devices for electronic neural networks

The fabrication and performance of WO3-based, solid-state, three-terminal device configurations as programmable analog memory elements are reported. These transistorlike device structures exhibit good resistance progammability with a remarkable resolution of a few percent of the resistive strength over a four orders of magnitude dynamic range. The most critical component of these devices is an insulating layer between the active WO3 and the cation donor layer. The progamming characteristics and operation mechanisms of the device are described, and probable reaction mechanisms critical to the device stability are discussed.

Ramesham, R.↗
NASA NTRS1991

Stacked-Gate FET's For Analog Memory Elements

Three-terminal, double-stacked-gate field-effect transistor (FET), developed as analog memory element. Particularly suited for use as synapse with variable connection strength in electronic neural network. Provides programmable, nonvolatile resistive connection, somewhat in manner of porous-gate FET described in "Porous-Floating-Gate Field-Effect Transistor" (NPO-17532). Resembles commercial erasable programmable read-only memory (EPROM) device, except for thickness of layers of silicon dioxide electrically isolating gates. Either p-channel or n-channel device.

Thakoor, Anilkumar P.↗
NASA NTRS1991

New materials and techniques for improved mm wave devices

Current research on microwave and mm wave three terminal semiconductor devices is summarized with particular attention given to the development of the pseudomorphic InGaAs modulation-doped field effect transistor (MODFET). Application of the high-indium-concentration MODFET grown on InP in the temperature range of 120-150 K is also described.

Alterovitz, Samuel A.↗
NASA NTRS1992

Improved Capacitive Liquid Sensor

Improved capacitive sensor used to detect presence and/or measure thickness of layer of liquid. Electrical impedance or admittance of sensor measured at prescribed frequency, and thickness of liquid inferred from predetermined theoretical or experimental relationship between impedance and thickness. Sensor is basically a three-terminal device. Features interdigitated driving and sensing electrodes and peripheral coplanar ground electrode that reduces parasitic effects. Patent-pending because first to utilize ground plane as "shunting" electrode. System less expensive than infrared, microwave, or refractive-index systems. Sensor successfully evaluated in commercial production plants to characterize emulsions, slurries, and solutions.

Waldman, Francis A.↗
NASA NTRS1991

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗
NASA NTRS1992

Conduction mechanism of single-crystal alumina

The fully guarded three-terminal technique was used to perform conductivity measurements on single-crystal alumina at temperatures of 400-1300 C. The conductivity was also determined as a function of time at various temperatures and applied fields. Further, the fractions of the current carried by Al and O ions (ionic transference numbers) were determined from long-term transference experiments in the temperature range 1100-1300 C. A mathematical model of the conduction mechanism is proposed, and model predictions are compared with experimental results.

Will, Fritz G.↗
NASA NTRS1992

Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992

The present volume on IR readout electronics discusses cryogenic readout using silicon devices, cryogenic readout using III-V and LTS devices, multiplexers for higher temperatures, and focal-plane signal processing electronics. Attention is given to the optimization of cryogenic CMOS processes for sub-10-K applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure device technology for ultracold readout applications, and a three-terminal semiconductor-superconductor transimpedance amplifier. Topics addressed include unfulfilled needs in IR astronomy focal-plane readout electronics, IR readout integrated circuit technology for tactical missile systems, and radiation-hardened 10-bit A/D for FPA signal processing. Also discussed are the implementation of a noise reduction circuit for spaceflight IR spectrometers, a real-time processor for staring receivers, and a fiber-optic link design for INMOS transputers.

Fossum, Eric R.↗
NASA NTRS1995

155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMTs (high-electron mobility transistors). These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 micron. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.

TRT-EXPERIMENTAL↗
NASA NTRS1998

Exploring Carbon Nanotubes for Nanoscale Devices

Carbon nanotubes (CNTs) are shown to promise great opportunities in nanoelectronic devices and nanoelectromechanical systems (NEMS) because of their inherent nanoscale sizes, intrinsic electric conductivities, and seamless hexagonal network architectures. I present our collaborative work with Stanford on exploring CNTs for nanodevices in this talk. The electrical property measurements suggest that metallic tubes are quantum wires. Furthermore, two and three terminal CNT junctions have been observed experimentally. We have proposed and studied CNT-based molecular switches and logic devices for future digital electronics. We also have studied CNTs based NEMS inclusing gears, cantilevers, and scanning probe microscopy tips. We investigate both chemistry and physics based aspects of the CNT NEMS. Our results suggest that CNT have ideal stiffness, vibrational frequencies, Q-factors, geometry-dependent electric conductivities, and the highest chemical and mechanical stabilities for the NEMS. The use of CNT SPM tips for nanolithography is presented for demonstration of the advantages of the CNT NEMS.

Han, Jie↗
NASA NTRS2002

Modeling of Switching and Hysteresis in Molecular Transport

The conventional way of modeling current transport in two and three terminal molecular devices could be inadequate for certain cases involving switching and hysteresis. Here we present an alternate approach. Contrary to the regular way where applied bias directly modulates the conducting energy levels of the molecule, our method introduces a nonlinear potential energy surface varying with the applied bias as a control parameter. A time-dynamics is also introduced properly accounting for switching and hysteresis behavior. Although the model is phenomenological at this stage, we believe any detailed model would contain similar descriptions at its core.

Samanta, Manoj P.↗
NASA NTRS1991

Recent progress in InP solar cell research

Significant new developments in InP solar cell research are reviewed. Recent accomplishments include monolithic multibandgap two junction cells (three and two terminal) using InP as the top cell and lattice matched GaInAs and GaInAsP as the bottom, low bandgap component. Concentrator cells include the three terminal multibandgap cell and n + p cell using an InP substrate. The review also includes small scale production of ITO/InP cells and results for n + p InP and ITO/InP cells in space on board the LIPS 3 satellite.

Weinberg, Irving↗
NASA NTRS1991

Recent progress in InP solar cell research

Significant new developments in InP solar cell research are reviewed. Recent accomplishments include monolithic multibandgap two junction cells (three and two terminal) using InP as the top cell and lattice matched GaInAs and GaInAsP as the bottom, low bandgap, component. Concentrator cells include the three terminal multibandgap cell and an n + p cell using an InP substrate. The review also includes small scale production of ITO/InP cells and results for n+p InP and ITO/InP cells in space on board the LIPS 3 satellite.

Weinberg, I.↗
NASA NTRS1985

A design study for a three-dimensional display computer terminal for meteorological information

The software developed on this project in FY-84 was put into final form and documented for McIDAS user access. The various users have been asked to utilize the techniques and to provide feedback to the developers. Researchers have received limited feedback to date, but nearly all has been helpful and generally favorable. The stereo display has been used by most of the operational users of McIDAS or its progenies. Specifically, the National Hurricane Center, the National Severe Storm Forecast Center, the National Meteorological Center, and the Cape Canaveral Forecast Facility have all made use of the 4-D display techniques to help evaluate meteorological situations on various occasions.

Suomi, V. E.↗
NASA NTRS1997

Response of Composite Panels with Stiffness Gradients Due to Stiffener Terminations and Cutouts

The results of an analytical and experimental study of stiffened graphite-epoxy compression panels with terminated stiffeners are presented. The local stress gradients at the stiffener termination location are determined by finite element analysis. Three stiffener termination concepts are evaluated by analysis to determine the stiffener and skin laminate parameters that affect the panel response and failure. The effects of changing local skin laminate definitions, skin reinforcement details, and stiffener termination details on local stress gradients and load-path eccentricities are discussed. Analytical and test results are presented for panels with one terminated stiffener and for panels with one terminated stiffener and two unterminated stiffeners. The effects of a cutout in the skin of a panel with a terminated stiffener is also evaluated to determine the interaction between the stress gradients in the panel due to the cutout and those due to the terminated stiffener. The results of the study indicate that the critical failure modes of the panels initiate at the skin-stiffener interface near the end of the terminated stiffener.

Ambur, Damodar R.↗
NASA NTRS1979

Digital Image Display Control System, DIDCS

DIDCS is an interactive image display and manipulation system that is used for a variety of astronomical image reduction and analysis operations. The hardware system consists of a PDP 11/40 main frame with 32K of 16-bit core memory; 96K of 16-bit MOS memory; two 9 track 800 BPI tape drives; eight 2.5 million byte RKO5 type disk packs, three user terminals, and a COMTAL 8000-S display system which has sufficient memory to store and display three 512 x 512 x 8 bit images along with an overlay plane and function table for each image, a pseudo color table and the capability for displaying true color. The software system is based around the language FORTH, which will permit an open ended dictionary of user level words for image analyses and display. A description of the hardware and software systems will be presented along with examples of the types of astronomical research that are being performed. Also a short discussion of the commonality and exchange of this type of image analysis system will be given.

Fischel, D.↗
NASA NTRSDate not supplied

Structural Analysis Findings of Open Spelter Socket Cable Terminations

A three-dimensional nonlinear finite element model of a representative open spelter socket termination was developed to examine the underlying mechanics of load transfer from a structural cable through the termination, the sensitivity of the joint design to wire brooming, zinc material nonlinearity, contact friction between the zinc and socket, voids within the zinc, and, finally, the effects of repeated loading on the joint. Primary factors affecting open spelter socket design are cast zinc plastic flow, depth of zinc slug seating, and quality of wire brooming. Zinc plasticity and proper brooming allows for efficient load transfer by developing confining pressure on the broomed wires in the narrow part of the socket, which keep the wires from pulling out of the zinc and shift failure to occur outside the socket. Highest wire stresses in the cable occur in the outer ring adjacent to the termination. While industry use of stay cables are typically designed to carry less than half the rated breaking force in aggregate, the constituent stresses within the zinc and the wires have the potential to exceed their respective allowable in operation and should be evaluated for fatigue- and creep-critical applications.

Pavel Babuska↗