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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Benzo[d]thiazole Based Wide Bandgap Donor Polymers Enable 19.54% Efficiency Organic Solar Cells Along with Desirable Batch-to-Batch Reproducibility and General Applicability

The limited selection pool of high-performance wide bandgap (WBG) polymer donors is a bottleneck problem of the nonfullerene acceptor (NFA) based organic solar cells (OSCs) that impedes the further improvement of their photovoltaic performances. In this work, a series of new WBG polymers, namely PH-BTz, PS-BTz, PF-BTz, and PCl-BTz, are developed by using the bicyclic difluoro-benzo[d]thiazole (BTz) as the acceptor block and benzo[1,2-b:4,5-b']dithiophene (BDT) derivatives as the donor units. By introducing S, F, and Cl atoms to the alkylthienyl sidechains on BDT, the resulting polymers exhibit lowered energy levels and enhanced aggregation properties. The fluorinated PBTz-F not only exhibits a low-lying HOMO level, but also has stronger face-on packing order and results in more uniform fibril-like interpenetrating networks in the related PF-BTz:L8-BO blend. A high-power conversion efficiency (PCE) of 18.57% is achieved. Moreover, PBTz-F also exhibits a good batch-to-batch reproducibility and general applicability. In addition, ternary blend OSCs based on the host PBTz-F:L8-BO blend and PM6 guest donor exhibits a further enhanced PCE of 19.54%, which is among the highest values of OSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Ultra Wide Bandgap Laser Addressable Photoconductors

Wide Band Gap (WBG) and Ultra Wide Band Gap (UWBG) photoconductors have the potential to meet several critical mission needs for LLNL and the broader USG due to their exceptional characteristics related to large critical electric field. In particular, high energy laser systems such as the National Ignition Facility would benefit from the development of new materials for active optical devices such as the Optically Addressable Light Valve (OALV) used in the Programmable Spatial Shaper System. Missions in Global Security would benefit from higher performance Photoconductive Semiconductor Switches for pulsed power and radiofrequency amplifiers. This project examined the suitability of both commercially available and custom synthesized semi insulating WBG and UWBG materials for several of these applications. We developed high laser damage threshold OALVs for optical systems based on several of these materials as well as new RF, pulsed power, and power electronics devices based on the same. These devices show superior power handling in terms of laser damage threshold, electric field, and power output. A number of the technologies developed have been transitioned to both internal and external customers.

42 ENGINEERING↗
DOE OSTI2024

Electronic Properties of Ultra‐Wide Bandgap B x Al 1− x N Computed from First‐Principles Simulations

Abstract Ultra‐wide bandgap (UWBG) materials such as AlN and BN hold great promise for future power electronics due to their exceptional properties. They exhibit large bandgaps, high breakdown fields, high thermal conductivity, and high mechanical strengths. AlN and BN have been extensively researched, however, their alloys, B x Al 1− x N, are much less studied despite their ability to offer tunable properties by adjusting x . In this article, the electronic properties of 17 recently predicted ground states of B x Al 1− x N in the x = 0 − 1 range are predicted using first‐principles density functional theory and many‐body perturbation theory within GW approximation. All the B x Al 1− x N structures are found to be UWBG materials and have bandgaps that vary linearly from that of wurtzite‐phase ( w ) AlN (6.19 eV) to that of w ‐BN (7.47 eV). The bandstructures of B x Al 1− x N show that a direct‐to‐indirect bandgap crossover occurs near x = 0.25. Furthermore, it is found that B x Al 1− x N alloys have much larger dielectric constants than the constituent bulk materials (AlN = 9.3 ɛ 0 or BN = 7.3 ɛ 0 ), with values reaching as high as 12.1 ɛ 0 . These alloys are found to exhibit large dielectric breakdown fields in the range 9–35 MV cm −1 with a linear dependence on x . This work provides the much needed advancement in the understanding of the properties of B x Al 1− x N to aid their application in next‐generation devices.

Milne, Cody L.↗
NASA NTRS2005

Ka-Band Wide-Bandgap Solid-State Power Amplifier: Hardware Validation

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solid-state power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents proof-of-concept hardware used to validate power-combining technologies that may enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results in previous articles [1-3] indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. Previous architecture performance analyses and estimates indicate that the proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This combining efficiency would correspond to MMIC requirements of 5- to 10-W output power and >48 percent PAE. In order to validate the performance estimates of the three proposed architectures, measurements of proof-of-concept hardware are reported here.

Epp, L.↗
NASA NTRS2005

A Ka-Band Wide-Bandgap Solid-State Power Amplifier: Architecture Performance Estimates

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the results of a study to investigate power-combining technology and SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results of the study indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. The proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This corresponds to MMIC requirements of 5- to 10-W output power and >48 percent PAE. For the three proposed architectures [1], detailed analysis and design of the power combiner are presented. The first architecture studied is based on a 16-way septum combiner that offers low loss and high isolation over the design band of 31 to 36 GHz. Analysis of a 2-way prototype septum combiner had an input match >25 dB, output match >30 dB, insertion loss <0.02 dB, and isolation >30 dB over the design band. A 16-way design, based on cascading this combiner in a binary fashion, is documented. The second architecture is based on a 24-way waveguide radial combiner. A prototype 24-way radial base was analyzed to have an input match >30 dB (under equal excitation of all input ports). The match of the mode transducer that forms the output of a radial combiner was found to be >27 dB. The functional bandwidth of the radial base and mode transducer, which together will form a radial combiner/divider, exceeded the design band. The third architecture employs a 32-way, parallel-plate radial combiner. Simulation results indicated an input match >24 dB, output match >22 dB, insertion loss <0.23 dB, and adjacent port isolation >20 dB over the design band. All three architectures utilize a low-loss MMIC amplifier module based on commercial MMIC packaging and a custom microstrip-to-rectangular-waveguide transition. The insertion loss of the module is expected to be 0.45 dB over the design band.

Epp, L.↗
DOE OSTI2025

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRSDate not supplied

Wide Bandgap Semiconductor Devices and Systems for Communications in Extreme Environment

The feasibility of gallium nitride based wide bandgap semiconductor devices for signal amplification in extreme planetary environment is investigated. The measured performance of these devices at S-band, X-band, and Ka-band are presented. The data indicates excellent performance at the above frequencies. Potential application of these devices includes communication systems required to operate in the extreme hot environment of Venus and in the extreme cold and high radiation environment of Jupiter’s icy moons.

Gallium Nitride↗
DOE OSTI2022

Epitaxial Electrodeposition of Wide Bandgap Cuprous Bromide on Silver via a Silver Bromide Buffer Layer

Cuprous halides are an important class of wide bandgap p-type semiconductors used in opto-electronics. Cuprous bromide (CuBr) shows potential for short-wavelength devices due to a large exciton binding energy (108 meV) and near-ultraviolet bandgap (3.1 eV). However, the growth of high-quality epitaxial CuBr films by electrodeposition has remained a challenge. Here, we introduce a low-cost electrochemical procedure for producing epitaxial CuBr(111) on a Ag(111) substrate by a [111]-oriented silver bromide (AgBr) buffer layer. The AgBr buffer layer forms during the electrodeposition of the CuBr. The mismatch between CuBr(111) and AgBr(111) is –1.3%. A plausible mechanism for nucleation and growth of the epitaxial CuBr is proposed. X-ray techniques including high resolution X-ray diffraction and X-ray pole figures are used to determine the epitaxial relationship. CuBr(100) is also produced on a Ag(100) surface by a AgBr(100) buffer layer that is rotated in-plane 45° relative to the Ag(100) surface. In conclusion, this in-plane rotation reduces the lattice mismatch from +39.5% for an unrotated film to –1.4% for a 45° rotated film.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Enhanced Photostability of “Hollow” Mixed Halide Wide-Bandgap Perovskite Films

We investigated the role of hollow perovskite architectures in enhancing the photostability of mixed halide wide-bandgap perovskites. We focused on mitigating photoluminescence (PL) peak shifts caused by phase segregation when exposed to light. By analyzing the optical and structural properties of mixed bromide/iodide hollow perovskite thin films, we observed that the incorporation of hollow structures reduced the ionic conductivity in the films, leading to improved photostability compared to non-hollow perovskite samples. The mixed halide hollow perovskite thin films exhibited increased the bandgap. High-power laser irradiation was used to induce phase segregation, and changes in the PL emission spectra were measured as a function of irradiation time. The mixed halide hollow perovskite thin films exhibited reduced PL peak shifts compared to the control samples. The inclusion of enI 2 (en = ethylenediamine) resulted in a reduction in the overall ionic conductivity of the films and a lower trap density. Hollow perovskite films incorporated in solar cells indicated that while the initial efficiency of the solar cells decreased with increasing enI 2 concentration, the open-circuit voltage value increased, potentially due to the slight enhancement of the band gap. Furthermore, the findings highlight the potential of hollow perovskite architectures in enhancing the photostability of mixed halide perovskites

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

A Six-Phase Space Vector PWM Technique for Wide Bandgap Device-Based Three-Level Inverters

This article presents a space vector pulsewidth modulation (SVPWM) technique for wide bandgap (WBG) device-based three-level (3L) six-phase inverters. Implementation of the SVPWM techniques for any six-phase inverter is complex for its high number of possible voltage vectors. Different six-phase load configurations are also possible depending on the angle between two consecutive phases and neutral point connections. The implementation techniques change depending on the load configuration. Moreover, a common neutral point for all six phases leads to circulating currents. Capacitor voltage balancing is also needed for 3L inverters. Capacitor voltage balancing and addressing the circulating current problem further increases the implementation complexity. In this article, a generalized SVPWM technique is proposed for the six-phase 3L inverters that is implementable using two three-phase 3L SVPWM blocks. The SVPWM technique also ensures dc bus capacitor voltage balancing and minimizes circulating current. Here, the SVPWM technique is experimentally verified using a GaN-based 3L six-phase active neutral point clamped (ANPC) inverter prototype, and the results are presented in this article.

42 ENGINEERING↗
DOE OSTI2025

Wide bandgap photoconductor (SiC:V)-based optically addressed light valve for high fluence operation

Optically addressable light valves based on wide bandgap 4H- and 6H-SiC as photoconductors were designed to withstand higher operational laser fluences than the state of-the-art bismuth silicon oxide (BSO; Bi 12 SiO 20 ) based devices. Vanadium-doped SiC was selected as the photoconductors due to their reasonable photoresponsivity while many fold improvement in laser induced damage threshold as compared to BSO. The laser induced damage threshold values of the materials were measured after exposing ~ 200 sites on the samples to increasing levels of fluence of a gaussian pulsed Nd: YAG laser system (1064 nm) with a 5 Hz repetition rate. The measured damage threshold values for BSO, 4H- and 6H-SiC were 0.4 J/cm 2 , 1.75 J/cm 2 and 1.8 J/cm 2 , respectively. Photoconductive switches based on 4H and 6H-SiC samples were characterized at wavelengths of 380 nm, 405 nm, and 447 nm. The peak photoresponsivity values of the 4H- and 6H-SiC materials were measured to be under 380 nm and 405 nm, respectively. The photoconductor was bonded to a BK7 optical window with 5 μm diameter microspheres as spacers. A twisted nematic type E7 liquid crystal (LC) was filled in the 5 μm gap in a vacuum chamber. The desired alignment of the liquid crystal was achieved by mutually orthogonal orientation of LC alignment layers on the two mating faces (SiC and BK7). The fabricated devices were modulated using address beams of wavelengths 380 nm, 405 nm, and 447 nm. In conclusion, required transmission levels of > 90% was achieved for the fabricated OALVs for a sinusoidal voltage waveform that meets the lifetime requirement of the device.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Modular Wide-bandgap String Inverters for Low-cost Medium-voltage Transformerless PV Systems

The proposed technology combines advances in wide-bandgap power electronics with breakthroughs in distributed and decentralized control to produce ultra-low-cost medium-voltage transformerless PV inverters that are composed of stackable lightweight blocks. Taken together, the proposed circuit designs and accompanying control strategies will yield integrated control+circuit (C2) blocks, each comprising a converter and local controller, that can be assembled in a modular fashion to obtain distributed conversion interfaces for next-generation commercial and utility-scale PV systems. We will utilize SiC devices to obtain C2 blocks that can individually operate at a voltage and power in excess of 1 kV and 100 kW, respectively, such that ensembles of series-connected blocks perform direct dc to three-phase ac conversion at medium voltages (e.g., 12 kV–35 kV) and at multi-MW power levels.

42 ENGINEERING↗
DOE OSTI2024

Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation

The effects of a pulsed, focused, deep-UV (4.66 eV) laser on wide and ultra-wide bandgap semiconductors were investigated with photoluminescence (PL) and Raman spectroscopy. Three semiconductor single crystals were studied: silicon carbide (6H-SiC), gallium nitride (GaN), and gallium oxide (β-Ga 2 O 3 ). Atomic emission lines from neutral Ga or Si were observed during the laser-damage process. For all three semiconductors, PL mapping (3.49 eV laser excitation) of the damaged material revealed visible emission bands in the 2.6–2.8 eV range, attributed to point defects. Raman spectra (2.33 eV excitation) showed a reduction in the Raman peak intensities in the damaged region, along with weak PL bands around 1.9–2.1 eV.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies. The plasma etching conditions used are generally ion-assisted because of the strong bond strengths in these materials, and this creates challenges for the choice of masks in order to have sufficient selectivity over the semiconductor and to avoid mask erosion and micromasking issues. It can also be challenging to achieve practical etch rates without creating excessive damage in the patterned surface. The authors review the optimum choices for plasma chemistries for each of the semiconductors and acknowledge the pioneering work of John Coburn, who first delineated the ion-assisted etch mechanism.

42 ENGINEERING↗
DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys

Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting numerous structural phases with unique optoelectronic properties that make them attractive candidates as ultra-wide bandgap (UWBG) semiconductors for next-generation power devices. Here we review the properties of AGO, focusing on theoretical results on the thermodynamics of Al incorporation and its consequences on the electronic structure. We review predictions and progress in experimentally realizing these alloys, as well as how composition influences important optoelectronic variables such as the band gap, band offsets, transport properties, and n-type dopability. A number of these parameters, such as the breakdown field (related to the band gap) and electron mobility, are discussed in assessing AGO in terms of relevant power device figures of merit. Altogether, the rapid progress and predicted properties highlight the promise of AGO as a model UWBG semiconductor platform with the potential to revolutionize power devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Unveiling the role of halide mixing in the crystallization kinetics and charge transfer mechanisms of wide-bandgap organic–inorganic halide perovskites

Understanding the crystallization kinetics of Br–I mixed-halide WBG perovskite films, and their correlation to the crystallographic structure and charge transfer dynamics, is critical for advancing WBG perovskite devices. Despite many efforts to increase the photovoltaic performances of wide-bandgap (WBG, with a Br content above 20%) perovskite solar cells based on bromine–iodine (Br–I) mixed-halide perovskites, understanding the crystallization kinetics of WBG perovskite films, as well as the role of Br mixing in the crystallization kinetics, is still lacking. Furthermore, an overlooked aspect is the correlation of the halide compositions, crystallization kinetics, crystallographic structure, and charge transfer dynamics. Here, we unveil that Br–I mixed-halide WBG perovskite films undergo two intrinsically different crystallization kinetic processes. One is the intermediate solvent-complex phase-assisted growth (I-rich), and the other is top-to-bottom downward growth (Br-rich). Such downward growth (including high Br concentrations) correlates with the formation of a highly vertically oriented perovskite film, which is accompanied by defect formation caused by a dissolving and recrystallization process coupled with halide homogenization. Consequently, Br-rich WBG perovskite films exhibit enhanced charge carrier transport, but are concurrently plagued by non-radiative charge recombination. Addressing this fundamental perspective is critical to precisely tailor Br-related crystallization, which significantly affects the structure and optoelectronic properties of WBG perovskite films and devices.

Li, Nian↗