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Data for evaluating the effects of moisture and temperature on the integrity of fiber composite components was gathered. In particular, the static and cyclic performance of three composite laminates containing flaws was investigated at room temperature and at 422 K (300 F) in wet and dry conditions.
Electron bombardment induced conductivity and scanning transmission electron microscopy observations on unprocessed and processed edge-defined film-fed growth ribbon show that the phosphorus diffused junction depth is not uniform, and that a variety of chemical impurities precipitate out during processing. Two kinds of precipitates are found (1) 10 nm or less in size, located at the dislocation nodes in sub-boundary like dislocation arrangements formed during processing and (2) large precipitates, the chemical composition of which has been partially identified. These large precipitates emit dense dislocations tangles into the adjacent crystal volume.
Method is noncontact and nondestructive. Technique detects solder bonds in solar array of other large circuit board, using thermal-imaging camera. Board placed between heat lamp and camera. Poor joints indiated by "cold" spots on the infrared image.
Welds not reworked because limited accessibility or material-annealing considerations reinforced by electrodeposition. Procedure of interest for nuclear reactor construction.
The relationships between hole mobility and grain boundary density were studied. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using a quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density.
An analytical method based on oxide/substrate intensity ratios is used to deduce the product of the atomic number density and electron mean free path as a function of depth, for the cases of device-quality gate oxides grown on Si substrates and irradiated with zero to 20 eV electrons during in situ X-ray photoelectron spectroscopy. These structures had been thinned stepwise to 25-60 A by means of a wet chemical depth-profiling procedure. Si(3+) species are formed in the Si/SiO2 interface region, and their observation during their relaxation and annihilation is correlated with strained Si-O-Si bonds. The observation of bond of cleavage and bond strain gradients in these samples is used to extend silica devitrification models for the explanation of fixed oxide charge generation and interface states.
Such complexities of the Wustite structure as nonstoichiometry, ferric iron variable site distribution, long and short range ordering, and exsolution, yield complex physical properties. Magnesiowustite, a phase which has been suggested to occur in the earth's lower mantle, is also expected to exhibit many of these complexities. Geophysical models including the properties of (Mg, Fe)O should accordingly take into account the uncertainties associated with the synthesis and measurement of iron-rich oxides. Given the variability of the Fe(1-x)O structure, it is important that future researchers define the structural state and extent of exsolution of their samples.
CoAl and FeAl compounds are developed along two directions. Magnetic susceptibility and specific heat at low temperature on (NiCo)Al and (CoFe)Al ternary alloys are in good agreement with band calculations. Results on magnetization and specific heat under field at low temperature on nonstoichiometric compounds show clearly the importance of the nearest neighbor effects. In the case of CoAl, the isolated cobalt atoms substituting aluminum are characterized by a Kondo behavior, and, for FeAl, the isolated extra iron atoms are magnetic and polarize the matrix. Moreover, for the two compounds, clusters of higher order play a considerable part in the magnetic properties for CoAl, these clusters also seem to be characterized by a Kondo behavior, for FeAl, these clusters whose moment is higher than in the case of isolated atoms, could be constituted of excess parts of iron atoms.
The effects of oxidation of Si which established that vacancies (V) and Si self interstitials (I) coexist in Si at high temperatures under thermal equilibrium and oxidizing conditions are discussed. Some essential points associated with Au diffusion in Si are then discussed. Analysis of Au diffusion results allowed a determination of the I component and an estimate of the V component of the Si self diffusion coefficient. A discussion of theories on high concentration P diffusion into Si is then presented. Although presently there still is no theory that is completely satisfactory, significant progresses are recently made in treating some essential aspects of this subject.
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Raster-scanned laser beam excites photocurrents in thin-film amorphous silicon devices. Solar-cell laser scanner uses two galvanometer-driven mirrors to scan laser-beam spot over surface of module or cell under test. Position signals from scan controllers used to index storage of photocurrent signal data in scan-converter image memory. Stored image displayed on television monitor.
The necessity for a low-cost crystalline silicon sheet material for photovoltaics has generated a number of alternative crystal growth techniques that would replace Czochralski (Cz) and float-zone (FZ) technologies. Efficiencies of devices fabricated from low resistivity FZ silicon are approaching 20%, and it is highly likely that this value will be superseded in the near future. However, FZ silicon is expensive, and is unlikely ever to be used for photovoltaics. Cz silicon has many of the desirable qualities of FZ except that minority-carrier lifetimes at lower resistivities are significantly less than those of FZ silicon. Even with Cz silicon, it is unlikely that cost goals can be met because of the poor-material yield that results from sawing and other aspects of the crystal rowth. Although other silicon sheet technologies have been investigated, almost all have characteristics that limit efficiency to approx. 16%. In summary, 20% efficient solar cells can likely be fabricated from both FZ and Cz silicon, but costs are likely to be ultimately unacceptable. Alternate silicon technologies are not likely to achieve this goal, but cost per watt figures may be eventually better than either of the single crystal technologies and may rival any thin-film technology.
MNDO (modified neglect of diatomic overlap) calculations have been carried out for substitutional oxygen and sulfur impurities in silicon. The calculations of the gap levels reveal a reversal of trend with atomic ionization energies in agreement with self-consistent Green function results, and analysis of the MNDO charge distribution supports the view that the electronegativity difference between oxygen and sulfur gives rise to this shallower energy level.
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Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep-level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev + 0.32 eV and at Ev + 0.45 eV, are observed. These results are compared to those obtained by furnace-quenching and laser-annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev + 0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized.
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Flexure test eliminates failure-prone wafers before further processing. Probability of cracking of silicon solar cells substantially reduced by mechanical proof testing of silicon wafers before further processing, according to report. Report based on study demonstrating weak wafers eliminated by subjecting all wafers in manufacturing batch to biaxial-flexure test.
A novel approach is introduced to address the problem of existence of differentiable eigenvectors for a nondefective matrix which may have repeated eigenvalues. The existence of eigenvector derivatives for a unique set of continuous eigenvectors corresponding to a repeated eigenvalue is rigorously established for nondefective and analytic matrices. A numerically implementable method is then developed to compute the differentiable eigenvectors associated with repeated eigenvalues. The solutions of eigenvalue and eigenvector derivatives for repeated eigenvalues are then derived. An example is given to illustrate the validity of formulations developed in this paper.